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    REDUCTION OF CARROT DEFECTS IN SILICON CARBIDE EPITAXY
    4.
    发明申请
    REDUCTION OF CARROT DEFECTS IN SILICON CARBIDE EPITAXY 有权
    减少碳化硅外壳中的卡扣缺陷

    公开(公告)号：US20080054412A1

    公开(公告)日：2008-03-06

    申请号：US11745817

    申请日：2007-05-08

    申请人： Michael O'Loughlin ,  Joseph Sumakeris

    发明人： Michael O'Loughlin ,  Joseph Sumakeris

    IPC分类号： H01L29/04 ,  H01L21/36

    CPC分类号： C30B25/02 ,  C03B23/02 ,  C30B29/36 ,  H01L21/02019 ,  H01L21/30621

    摘要： Single crystal silicon carbide epitaxial layer on an off-axis substrate are manufactured by placing the substrate in an epitaxial growth reactor, growing a first layer of epitaxial silicon carbide on the substrate, interrupting the growth of the first layer of epitaxial silicon carbide, etching the first layer of epitaxial silicon carbide to reduce the thickness of the first layer, and regrowing a second layer of epitaxial silicon carbide on the first layer of epitaxial silicon carbide. Carrot defects may be terminated by the process of interrupting the epitaxial growth process, etching the grown layer and regrowing a second layer of epitaxial silicon carbide. The growth interruption/etching/regrowth may be repeated multiple times. A silicon carbide epitaxial layer has at least one carrot defect that is terminated within the epitaxial layer. A semiconductor stricture includes an epitaxial layer of silicon carbide on an off-axis silicon carbide substrate, and a carrot defect having a nucleation point in the vicinity of an interface between the substrate and the epitaxial layer and is terminated within the epitaxial layer.

    摘要翻译： 通过将衬底放置在外延生长反应器中，在衬底上生长第一层外延碳化硅，中断外延碳化硅的第一层的生长，蚀刻外延碳化硅的第一层，制造脱轴衬底上的单晶碳化硅外延层 第一层外延碳化硅以减小第一层的厚度，以及在第一层外延碳化硅上再生第二层外延碳化硅。 胡萝卜缺陷可以通过中断外延生长过程，蚀刻生长层和再生第二层外延碳化硅的过程来终止。 生长中断/蚀刻/再生长可以重复多次。 碳化硅外延层具有端接在外延层内的至少一个胡萝卜缺陷。 半导体狭缝包括在离轴碳化硅衬底上的碳化硅外延层和胡萝卜缺陷，其具有在衬底和外延层之间的界面附近的成核点并终止在外延层内。

    REDUCTION OF CARROT DEFECTS IN SILICON CARBIDE EPITAXY
    5.
    发明申请
    REDUCTION OF CARROT DEFECTS IN SILICON CARBIDE EPITAXY 有权
    减少碳化硅外壳中的卡扣缺陷

    公开(公告)号：US20070108450A1

    公开(公告)日：2007-05-17

    申请号：US10790406

    申请日：2004-03-01

    申请人： Michael O'Loughlin ,  Joseph Sumakeris

    发明人： Michael O'Loughlin ,  Joseph Sumakeris

    IPC分类号： H01L31/0312 ,  H01L21/302 ,  H01L29/15

    CPC分类号： C30B25/02 ,  C03B23/02 ,  C30B29/36 ,  H01L21/02019 ,  H01L21/30621

    摘要： Single crystal silicon carbide epitaxial layer on an off-axis substrate are manufactured by placing the substrate in an epitaxial growth reactor, growing a first layer of epitaxial silicon carbide on the substrate, interrupting the growth of the first layer of epitaxial silicon carbide, etching the first layer of epitaxial silicon carbide to reduce the thickness of the first layer, and regrowing a second layer of epitaxial silicon carbide on the first layer of epitaxial silicon carbide. Carrot defects may be terminated by the process of interrupting the epitaxial growth process, etching the grown layer and regrowing a second layer of epitaxial silicon carbide. The growth interruption/etching/regrowth may be repeated multiple times. A silicon carbide epitaxial layer has at least one carrot defect that is terminated within the epitaxial layer. A semiconductor structure includes an epitaxial layer of silicon carbide on an off-axis silicon carbide substrate, and a carrot defect having a nucleation point in the vicinity of an interface between the substrate and the epitaxial layer and is terminated within the epitaxial layer.

    摘要翻译： 通过将衬底放置在外延生长反应器中，在衬底上生长第一层外延碳化硅，中断外延碳化硅的第一层的生长，蚀刻外延碳化硅的第一层，制造脱轴衬底上的单晶碳化硅外延层 第一层外延碳化硅以减小第一层的厚度，以及在第一层外延碳化硅上再生第二层外延碳化硅。 胡萝卜缺陷可以通过中断外延生长过程，蚀刻生长层和再生第二层外延碳化硅的过程来终止。 生长中断/蚀刻/再生长可以重复多次。 碳化硅外延层具有端接在外延层内的至少一个胡萝卜缺陷。 半导体结构包括在偏轴碳化硅衬底上的碳化硅外延层和在衬底和外延层之间的界面附近具有成核点的胡萝卜缺陷，并且终止在外延层内。

    Deposition systems and susceptor assemblies for depositing a film on a substrate
    8.
    发明申请
    Deposition systems and susceptor assemblies for depositing a film on a substrate 有权
    用于在衬底上沉积膜的沉积系统和感受器组件

    公开(公告)号：US20070101939A1

    公开(公告)日：2007-05-10

    申请号：US11512800

    申请日：2006-08-29

    申请人： Joseph Sumakeris ,  Michael Paisley ,  Michael O'Loughlin

    发明人： Joseph Sumakeris ,  Michael Paisley ,  Michael O'Loughlin

    IPC分类号： C23C16/00

    CPC分类号： C23C16/45519 ,  C23C16/4401 ,  C23C16/455 ,  C23C16/488

    摘要： Parasitic deposits are controlled in a deposition system for depositing a film on a substrate, the deposition system of the type defining a reaction chamber for receiving the substrate and including a process gas in the reaction chamber and an interior surface contiguous with the reaction chamber. Such control is provided by flowing a buffer gas between the interior surface and at least a portion of the process gas to form a gas barrier layer such that the gas barrier layer inhibits contact between the interior surface and components of the process gas. A deposition system for depositing a film on a substrate using a process gas includes a reaction chamber adapted to receive the substrate and the process gas. The system further includes an interior surface contiguous with the reaction chamber. A buffer gas supply system is adapted to supply a flow of a buffer gas between the interior surface and at least a portion of the process gas such that the flow of the buffer gas forms a gas barrier layer to inhibit contact between the interior surface and components of the process gas when the process gas is disposed in the reaction chamber.

    摘要翻译： 寄生沉积物被控制在用于在基底上沉积膜的沉积系统中，这种类型的沉积系统限定用于接收基底的反应室，并且在反应室中包括处理气体和与反应室邻接的内表面。 通过在内表面和至少一部分处理气体之间流动缓冲气体以形成阻气层来提供这种控制，使得气体阻隔层抑制处理气体的内表面和组分之间的接触。 用于使用工艺气体在衬底上沉积膜的沉积系统包括适于接收衬底和工艺气体的反应室。 该系统还包括与反应室邻接的内表面。 缓冲气体供应系统适于在内表面和处理气体的至少一部分之间提供缓冲气体流，使得缓冲气体的流动形成阻气层，以阻止内表面和部件之间的接触 当处理气体设置在反应室中时，该工艺气体。

    Directed reagents to improve material uniformity
    9.
    发明申请
    Directed reagents to improve material uniformity 有权
    定向试剂，以提高材料均匀性

    公开(公告)号：US20070065577A1

    公开(公告)日：2007-03-22

    申请号：US11224374

    申请日：2005-09-12

    申请人： Joseph Sumakeris ,  Michael Paisley ,  Michael O'Loughlin

    发明人： Joseph Sumakeris ,  Michael Paisley ,  Michael O'Loughlin

    IPC分类号： C23C16/00

    CPC分类号： C23C16/4584 ,  C23C16/45514 ,  C23C16/45563 ,  C30B25/02 ,  C30B25/12 ,  C30B25/14 ,  C30B29/36

    摘要： A method for locally controlling the stoichiometry of an epitaxially deposited layer on a semiconductor substrate is provided. The method includes directing a first reactant gas and a doping gas across a top surface of a semiconductor substrate and directing a drive gas and a second reactant gas against the substrate separately from the first reactant gas in a manner that rotates the substrate while introducing the second reactant gas at an edge of the substrate to control each reactant separately, thereby compensating and controlling depletion effects and improving doping uniformity in resulting epitaxial layers on the substrate.

    摘要翻译： 提供了一种用于局部控制半导体衬底上的外延沉积层的化学计量的方法。 该方法包括：引导第一反应气体和掺杂气体穿过半导体衬底的顶表面，并将驱动气体和第二反应气体以与第一反应气体分离的方式引导基板，同时引导第二反应气体 在衬底的边缘处的反应气体，以分别控制每个反应物，由此补偿和控制耗尽效应并改善衬底上所得到的外延层中的掺杂均匀性。

    METHODS FOR CONTROLLING FORMATION OF DEPOSITS IN A DEPOSITION SYSTEM AND DEPOSITION METHODS INCLUDING THE SAME
    10.
    发明申请
    METHODS FOR CONTROLLING FORMATION OF DEPOSITS IN A DEPOSITION SYSTEM AND DEPOSITION METHODS INCLUDING THE SAME 有权
    用于控制沉积系统中沉积物形成的方法和包括其的沉积方法

    公开(公告)号：US20060216416A1

    公开(公告)日：2006-09-28

    申请号：US10414787

    申请日：2003-04-16

    申请人： Joseph Sumakeris ,  Michael Paisley ,  Michael O'Loughlin

    发明人： Joseph Sumakeris ,  Michael Paisley ,  Michael O'Loughlin

    IPC分类号： C23C16/00

    CPC分类号： C23C16/45519 ,  C23C16/4401 ,  C23C16/455 ,  C23C16/488

    摘要： A method for controlling parasitic deposits in a deposition system for depositing a film on a substrate, the deposition system defining a reaction chamber for receiving the substrate and including a process gas in the reaction chamber and an interior surface contiguous with the reaction chamber, includes flowing a buffer gas between the interior surface and at least a portion of the process gas to form a gas barrier layer such that the gas barrier layer inhibits contact between the interior surface and components of the process gas.

    摘要翻译： 一种用于控制用于在衬底上沉积膜的沉积系统中的寄生沉积物的方法，所述沉积系统限定用于接收衬底并在反应室中包括工艺气体和与反应室邻接的内表面的反应室，包括流动 在所述内表面和所述处理气体的至少一部分之间形成缓冲气体，以形成阻气层，使得所述阻气层抑制所述内表面和所述工艺气体的组分之间的接触。