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公开(公告)号：US07160392B2
公开(公告)日：2007-01-09
申请号：US10688384
申请日：2003-10-17
IPC分类号： H01L21/027 , C23C16/00
CPC分类号： H01L21/68742 , C23C16/458
摘要： A substrate support assembly and method for dechucking a substrate is provided. In one embodiment, a support assembly includes a substrate support having a support surface, a first set of lift pins and one or more other lift pins movably disposed through the substrate support. The first set of lift pins and the one or more lift pins project from the support surface when the pins are in an actuated position. When in the actuated position, the first set of lift pins project a longer distance from the support surface than the one or more other lift pins. In another aspect of the invention, a method for dechucking a substrate from a substrate support is provided. In one embodiment, the method includes the steps of projecting a first set of lift pins a first distance above a surface of a substrate support, and projecting a second set of lift pins a second distance above the surface of the substrate support that is less than the first distance.
摘要翻译： 提供了一种用于对基板进行脱扣的基板支撑组件和方法。 在一个实施例中，支撑组件包括具有支撑表面的基板支撑件，第一组提升销和可移动地设置穿过基板支撑件的一个或多个其他提升销。 当销处于致动位置时，第一组提升销和一个或多个提升销从支撑表面突出。 当处于致动位置时，第一组提升销与支撑表面比一个或多个其他提升销突出较长的距离。 在本发明的另一方面，提供了一种用于从基板支撑件去除基板的方法。 在一个实施例中，该方法包括以下步骤：将第一组提升销投影在衬底支撑件的表面之上的第一距离处，并且将第二组提升销投影在衬底支撑件的表面上方的第二距离处，该第二组提升销小于 第一个距离。
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公开(公告)号：US06676761B2
公开(公告)日：2004-01-13
申请号：US10308385
申请日：2002-12-02
IPC分类号： H01L2100
CPC分类号： H01L21/68742 , C23C16/458
摘要： A substrate support assembly and method for dechucking a substrate is provided. In one embodiment, a support assembly includes a substrate support having a support surface, a first set of lift pins and one or more other lift pins movably disposed through the substrate support. The first set of lift pins and the one or more lift pins project from the support surface when the pins are in an actuated position. When in the actuated position, the first set of lift pins project a longer distance from the support surface than the one or more other lift pins. In another aspect of the invention, a method for dechucking a substrate from a substrate support is provided. In one embodiment, the method includes the steps of projecting a first set of lift pins a first distance above a surface of a substrate support, and projecting a second set of lift pins a second distance above the surface of the substrate support that is less than the first distance.
摘要翻译： 提供了一种用于对基板进行脱扣的基板支撑组件和方法。 在一个实施例中，支撑组件包括具有支撑表面的基板支撑件，第一组提升销和可移动地设置穿过基板支撑件的一个或多个其他提升销。 当销处于致动位置时，第一组提升销和一个或多个提升销从支撑表面突出。 当处于致动位置时，第一组提升销与支撑表面比一个或多个其他提升销突出较长的距离。 在本发明的另一方面，提供了一种用于从基板支撑件去除基板的方法。 在一个实施例中，该方法包括以下步骤：将第一组提升销投影在衬底支撑件的表面之上的第一距离处，并且将第二组提升销投影在衬底支撑件的表面上方的第二距离处，该第二组提升销小于 第一个距离。
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3.发明授权Deposition of film layers by alternately pulsing a precursor and high frequency power in a continuous gas flow 有权通过在连续气流中交替地脉冲前驱和高频功率沉积膜层公开(公告)号：US06825134B2
公开(公告)日：2004-11-30
申请号：US10254627
申请日：2002-09-24
申请人： Kam S. Law , Quanyuan Shang , William R. Harshbarger , Dan Maydan , Soo Young Choi , Beom Soo Park , Sanjay Yadav , John M. White
发明人： Kam S. Law , Quanyuan Shang , William R. Harshbarger , Dan Maydan , Soo Young Choi , Beom Soo Park , Sanjay Yadav , John M. White
IPC分类号： H01L21471
CPC分类号： C23C16/45542 , C23C16/402 , H01L21/02164 , H01L21/02274 , H01L21/0228 , H01L21/3143 , H01L21/31612 , H01L21/31683 , H01L21/318 , H01L21/3185 , H01L21/32105 , H01L21/3211 , H01L29/66765
摘要： A method of film layer deposition is described. A film layer is deposited using a cyclical deposition process. The cyclical deposition process consists essentially of a continuous flow of one or more process gases and the alternate pulsing of a precursor and energy to form a film on a substrate structure.
摘要翻译： 描述了膜层沉积的方法。 使用循环沉积工艺沉积膜层。 循环沉积过程基本上由一种或多种工艺气体的连续流动以及前体和能量的交替脉冲组成在衬底结构上形成膜。
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公开(公告)号：US07300829B2
公开(公告)日：2007-11-27
申请号：US10453333
申请日：2003-06-02
申请人： Mark Hsiao , Dong-Kil Yim , Takako Takehara , Quanyuan Shang , William R. Harshbarger , Woong-Kwon Kim , Duk-Chul Yun , Youn-Gyung Chang
发明人： Mark Hsiao , Dong-Kil Yim , Takako Takehara , Quanyuan Shang , William R. Harshbarger , Woong-Kwon Kim , Duk-Chul Yun , Youn-Gyung Chang
IPC分类号： H01L21/20 , H01L21/84 , H01L21/336
CPC分类号： H01L29/66765 , H01L29/4908 , H01L29/78669 , H01L29/78678
摘要： Method of fabricating a thin-film transistor (TFT) in which a gate metal is deposited onto a substrate in order to form the gate of the thin-film transistor. The substrate may be an insulative substrate or a color filter. In a first method, the gate metal is subjected to an H2 plasma. After subjecting the gate metal to an H2 plasma, the gate insulating film is deposited onto the gate. In a second method, first and second layers of gate insulating film are respectively deposited on the gate at a first and second deposition rates. One layer is deposited under H2 or argon dilution conditions and has improved insulating conditions while the other layer serves to lower the overall compressive stress of the dual layer gate insulator. In a third method, an n+ silicon film is formed on a substrate by maintaining a flow of silane, phosphine and hydrogen gas into a processing chamber at substrate temperatures of about 300° C. or less.
摘要翻译： 制造薄膜晶体管（TFT）的方法，其中栅极金属沉积到衬底上以形成薄膜晶体管的栅极。 衬底可以是绝缘衬底或滤色器。 在第一种方法中，栅极金属经受H 2 H 2等离子体。 在栅极金属经受H 2等离子体后，栅极绝缘膜沉积在栅极上。 在第二种方法中，第一和第二栅极绝缘膜层分别以第一和第二沉积速率沉积在栅极上。 一层沉积在H 2 N 2或氩稀释条件下，并且具有改善的绝缘条件，而另一层用于降低双层栅极绝缘体的整体压应力。 在第三种方法中，通过在约300℃或更低的衬底温度下保持硅烷，膦和氢气流入处理室，在衬底上形成n + +硅膜。
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公开(公告)号：US06981508B2
公开(公告)日：2006-01-03
申请号：US10856654
申请日：2004-05-27
IPC分类号： B08B9/093
CPC分类号： H01J37/32862 , C23C16/4405 , Y10S134/902 , Y10S438/905
摘要： Provided herein is a method for cleaning a process chamber for semiconductor and/or flat panel display manufacturing. This method comprises the steps of converting a non-cleaning feed gas to a cleaning gas in a remote location and then delivering the cleaning gas to the process chamber for cleaning. Such method may further comprise the step of activating the cleaning gas outside the chamber before the delivery of the gas to the chamber. Also provided is a method of eliminating non-cleaning feed gas from the cleaning gas by cryo condensation.
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公开(公告)号：US06858548B2
公开(公告)日：2005-02-22
申请号：US10125961
申请日：2002-04-18
IPC分类号： C23C16/40 , C23C16/509 , G02F1/1362 , H01L21/77 , H01L21/84 , H01L27/12 , H01L21/31 , H01L21/469
CPC分类号： G02F1/1362 , C23C16/401 , C23C16/5096 , G02F1/136227 , H01L27/1248 , Y10T428/31663
摘要： A process for depositing a low dielectric constant layer (k
摘要翻译： 一种用于在平板显示器和平板显示器上沉积低介电常数层（k <3）的工艺。 该方法包括使一种或多种有机硅化合物与含氧化合物以约0.345W / cm 2至约1.265W / cm 2的RF功率水平反应。 平板显示器包括具有第一基板，沉积在第一基板上的多个屏障，第二基板，沉积在第二基板上的低介电常数层（k <3）的等离子体显示面板，以及多个接地电极 形成在阻挡层和电介质层之间。
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公开(公告)号：US06432255B1
公开(公告)日：2002-08-13
申请号：US09494581
申请日：2000-01-31
IPC分类号： H05H100
CPC分类号： H01L21/67063 , H01L21/67069
摘要： A system for processing substrates within a chamber and for cleaning accumulated material from chamber components is provided. The system includes a reactive species generator adapted to generate a reactive gas species for chemically etching accumulated material from chamber components, and a processing chamber having at least one component with a mirror polished surface which is exposed to the reactive species. Preferably to have the greatest impact on chamber cleaning efficiency, the mirror polished surface is a surface of a component such as a gas distribution plate or a backing plate, and/or is a surface of a plurality of smaller components (e.g., chamber wall liners, a gas conductance line, etc.) so as to constitute a large percentage of the surface area exposed to the reactive species. Most preferably all bare aluminum surfaces which the reactive species contacts are mirror polished.
摘要翻译： 提供了一种用于在室内处理基板并且用于从腔室部件清洗积聚的材料的系统。 该系统包括适于产生反应性气体种类的反应物种发生器，用于从腔室部件化学蚀刻积聚的材料，以及处理室，其具有至少一个具有暴露于反应性物质的镜面抛光表面的部件。 优选地，对室清洁效率具有最大的影响，镜面抛光表面是诸如气体分配板或背板的部件的表面，和/或是多个较小部件的表面（例如，室壁衬套 ，气体导电线等），以便构成暴露于反应性物质的大部分表面积。 最优选地，反应性物质接触的所有裸铝表面被镜面抛光。
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公开(公告)号：US08002896B2
公开(公告)日：2011-08-23
申请号：US11248385
申请日：2005-10-11
IPC分类号： C23C16/04 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C23C16/042 , C23C16/4585 , C23C16/4586
摘要： A shadow frame and framing system for semiconductor fabrication equipment comprising a rectangular frame having four edges, the edges forming an interior lip with a top surface and an bottom engagement surface; and a cross beam disposed between at least two edges of the frame, the cross beam having a top surface and a bottom engagement surface, the engagement surface of the cross beam configured to be flush with the engagement surface of the lip; wherein one or more of the engagement surfaces are configured to cover metal interconnect bonding areas on a carrier disposed below the frame. The shadow frame is particularly useful in plasma enhanced chemical vapor deposition (PECVD) applications used to make active matrix liquid crystal displays (AMLCDs) and solar cells.
摘要翻译： 一种用于半导体制造设备的阴影框架和框架系统，包括具有四个边缘的矩形框架，所述边缘形成具有顶部表面和底部接合表面的内部唇部; 以及设置在所述框架的至少两个边缘之间的横梁，所述横梁具有顶表面和底部接合表面，所述横梁的接合表面被配置为与所述唇缘的接合表面齐平; 其中所述接合表面中的一个或多个构造成覆盖设置在所述框架下方的载体上的金属互连结合区域。 阴影框架在用于制造有源矩阵液晶显示器（AMLCD）和太阳能电池的等离子体增强化学气相沉积（PECVD）应用中特别有用。
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公开(公告)号：US06960263B2
公开(公告)日：2005-11-01
申请号：US10136249
申请日：2002-04-25
IPC分类号： C23C16/04 , C23C16/458 , H01L21/205 , C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： C23C16/042 , C23C16/4585 , C23C16/4586
摘要： A shadow frame and framing system for semiconductor fabrication equipment comprising a rectangular frame having four edges, the edges forming an interior lip with a top surface and an bottom engagement surface; and a cross beam disposed between at least two edges of the frame, the cross beam having a top surface and a bottom engagement surface, the engagement surface of the cross beam configured to be flush with the engagement surface of the lip; wherein one or more of the engagement surfaces are configured to cover metal interconnect bonding areas on a carrier disposed below the frame. The shadow frame is particularly useful in plasma enhanced chemical vapor deposition (PECVD) applications used to make active matrix liquid crystal displays (AMLCDs) and solar cells.
摘要翻译： 一种用于半导体制造设备的阴影框架和框架系统，包括具有四个边缘的矩形框架，所述边缘形成具有顶部表面和底部接合表面的内部唇部; 以及设置在所述框架的至少两个边缘之间的横梁，所述横梁具有顶表面和底部接合表面，所述横梁的接合表面被配置为与所述唇缘的接合表面齐平; 其中所述接合表面中的一个或多个构造成覆盖设置在所述框架下方的载体上的金属互连结合区域。 阴影框架在用于制造有源矩阵液晶显示器（AMLCD）和太阳能电池的等离子体增强化学气相沉积（PECVD）应用中特别有用。
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公开(公告)号：US06863077B2
公开(公告)日：2005-03-08
申请号：US10195718
申请日：2002-07-15
IPC分类号： B08B7/00 , B08B9/08 , C23C16/44 , H01L21/00 , H01L21/205 , H01L21/302 , H01L21/304 , H01L21/3065 , C25F3/00
CPC分类号： H01L21/67063 , H01L21/67069
摘要： A system for processing substrates within a chamber and for cleaning accumulated material from chamber components is provided. The system includes a reactive species generator adapted to generate a reactive gas species for chemically etching accumulated material from chamber components, and a processing chamber having at least one component with a mirror polished surface which is exposed to the reactive species. Preferably to have the greatest impact on chamber cleaning efficiency, the mirror polished surface is a surface of a component such as a gas distribution plate or a backing plate, and/or is a surface of a plurality of smaller components (e.g., chamber wall liners, a gas conductance line, etc.) so as to constitute a large percentage of the surface area exposed to the reactive species. Most preferably all bare aluminum surfaces which the reactive species contacts are mirror polished.
摘要翻译： 提供了一种用于在室内处理基板并且用于从腔室部件清洗积聚的材料的系统。 该系统包括适于产生反应性气体种类的反应物种发生器，用于从腔室部件化学蚀刻积聚的材料，以及处理室，其具有至少一个具有暴露于反应物质的镜面抛光表面的部件。 优选地，为了对室清洁效率具有最大的影响，镜面抛光表面是诸如气体分配板或背板的部件的表面，和/或是多个较小部件的表面（例如，室壁衬套 ，气体导电线等），以便构成暴露于反应性物质的大部分表面积。 最优选地，反应性物质接触的所有裸铝表面被镜面抛光。
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