公开(公告)号：US11158597B2

公开(公告)日：2021-10-26

申请号：US16817172

申请日：2020-03-12

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Wataru Shiroi ,  Shuuichi Kariyazaki

IPC: H01L23/31 ,  H01L23/00

Abstract: The electronic device includes first and second semiconductor components. And, the electronic device includes a sealing body for sealing the first semiconductor component (i.e., the logic chip). A plurality of through conductors electrically connected to the first semiconductor component and/or the second semiconductor component is formed in the sealing body. In plan view, the sealing body has a first region in which the first semiconductor component is located, a second region located on a periphery of a first surface of the sealing body, a third region located between the second region and the first region, and a fourth region located between the second region and the third region. The plurality of through conductors is arranged most in the second region. The number of the plurality of through conductors located in the third region is larger than the number of the plurality of through conductors located in the fourth region.

公开(公告)号：US10159144B2

公开(公告)日：2018-12-18

申请号：US15549107

申请日：2015-08-20

Applicant: Renesas Electronics Corporation

Inventor： Shuuichi Kariyazaki ,  Wataru Shiroi ,  Kenichi Kuboyama

IPC: H05K7/00 ,  H05K1/02 ,  H01L23/32 ,  H01L25/04 ,  H01L25/18 ,  H05K1/14 ,  H05K3/40 ,  H05K1/18 ,  H05K1/11 ,  H05K1/16 ,  H05K7/02

Abstract: A semiconductor device according to an embodiment has a first semiconductor component and a second semiconductor component which are electrically connected with each other via an interposer. The interposer has a plurality of first signal wiring paths, and a plurality of second signal wiring paths each having a path distance smaller than each of the plurality of first signal wiring paths. Furthermore, the first semiconductor component includes a first electrode, a second electrode, and a third electrode arranged in order in a first direction. Furthermore, the second semiconductor component includes a fourth electrode, a fifth electrode, and a sixth electrode arranged in order in the first direction. Furthermore, the first electrode is connected with the fourth electrode via the first signal wiring path, the second electrode is connected with the fifth electrode via the first signal wiring path, and the third electrode is connected with the sixth electrode via the first signal wiring path.

公开(公告)号：US11605581B2

公开(公告)日：2023-03-14

申请号：US17144897

申请日：2021-01-08

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Wataru Shiroi ,  Shuuichi Kariyazaki

IPC: H01L23/498 ,  H01L23/00

Abstract: A semiconductor device comprising a wiring member with which a semiconductor chip is electrically connected including: a first wiring layer having a plurality of first conductive patterns; a second wiring layer arranged next to the first wiring layer in a thickness direction of the wiring member, and having a second conductive pattern; and a third wiring layer arranged next to the second wiring layer in the thickness direction of the wiring member, and having a third conductive pattern. Here, in plan view, a first opening portion of each of two, which are arranged next to each other, of a plurality of first opening portions each penetrating through the second conductive pattern is overlapped with a pair of differential signal wirings contained in plurality of first conductive patterns, and is overlapped with two or more of a plurality of second opening portions each penetrating through the third conductive pattern.

公开(公告)号：US09461016B2

公开(公告)日：2016-10-04

申请号：US14967463

申请日：2015-12-14

Applicant: Renesas Electronics Corporation

Inventor： Shuuichi Kariyazaki ,  Wataru Shiroi ,  Ryuichi Oikawa ,  Kenichi Kuboyama

IPC: H01L25/065 ,  H01L23/498

CPC classification number: H01L25/0655 ,  H01L23/147 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/5226 ,  H01L23/528 ,  H01L24/13 ,  H01L24/16 ,  H01L25/18 ,  H01L2224/0401 ,  H01L2224/13022 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06555 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/157 ,  H01L2924/3025 ,  H01L2924/0002 ,  H01L2924/00

Abstract: To improve reliability of signal transmission of an interposer which couples between semiconductor chips. A reference potential wiring and a reference potential wiring are provided on both neighboring sides of a signal wiring provided in a first wiring layer of an interposer. Also, a reference potential wiring and a reference potential wiring are provided on both neighboring sides of a signal wiring provided in a second wiring layer of the interposer. Further, the signal wiring and the signal wiring cross each other in plan view. The reference potential wirings of the first wiring layer, and the reference potential wirings of the second wiring layer are coupled to each other at the periphery of their crossing portion.

Abstract translation: 为了提高耦合在半导体芯片之间的插入器的信号传输的可靠性。 在设置在插入件的第一布线层中的信号线的两个相邻侧上设置参考电位布线和参考电位布线。 此外，在设置在插入器的第二布线层中的信号线的两个相邻侧上设置参考电位布线和参考电位布线。 此外，信号布线和信号布线在平面图中彼此交叉。 第一布线层的参考电位布线和第二布线层的参考电位布线在其交叉部分的周围彼此耦合。

公开(公告)号：US10027311B1

公开(公告)日：2018-07-17

申请号：US15812831

申请日：2017-11-14

Applicant: Renesas Electronics Corporation

Inventor： Ryuichi Oikawa ,  Wataru Shiroi

IPC: H03K17/16 ,  H03K19/003 ,  H03H11/28 ,  H01L25/18 ,  H01L23/498 ,  H01L23/50 ,  H01L23/538 ,  H01L23/64

Abstract: To provide an inexpensive semiconductor device capable of suppressing the influence by crosstalk. A semiconductor device includes a signal wiring disposed in an organic interposer, an output circuit which is coupled to a first end of the signal wiring and which sets an impedance so as to generate a reflected wave antiphase to a waveform transmitted to the first end and periodically outputs data, and an input circuit which is coupled to a second end of the signal wiring and sets an impedance so as to generate a reflected wave of the same phase as a waveform transmitted to the second end. An average delay of the signal wiring is set to be 1/integer of 2 or more relative to a half of a cycle of the data. A difference between the maximum and minimum values of a delay of a signal at each of other signal wirings disposed in the organic interposer is set to be not greater than the average delay.

公开(公告)号：US20180183411A1

公开(公告)日：2018-06-28

申请号：US15812831

申请日：2017-11-14

Applicant: Renesas Electronics Corporation

Inventor： Ryuichi OIKAWA ,  Wataru Shiroi

IPC: H03H11/28 ,  H01L25/18 ,  H01L23/498 ,  H01L23/538 ,  H01L23/64 ,  H01L23/50

CPC classification number: H03H11/28 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/49833 ,  H01L23/49894 ,  H01L23/50 ,  H01L23/5386 ,  H01L23/647 ,  H01L25/18

Abstract: To provide an inexpensive semiconductor device capable of suppressing the influence by crosstalk. A semiconductor device includes a signal wiring disposed in an organic interposer, an output circuit which is coupled to a first end of the signal wiring and which sets an impedance so as to generate a reflected wave antiphase to a waveform transmitted to the first end and periodically outputs data, and an input circuit which is coupled to a second end of the signal wiring and sets an impedance so as to generate a reflected wave of the same phase as a waveform transmitted to the second end. An average delay of the signal wiring is set to be 1/integer of 2 or more relative to a half of a cycle of the data. A difference between the maximum and minimum values of a delay of a signal at each of other signal wirings disposed in the organic interposer is set to be not greater than the average delay.

公开(公告)号：US11990397B2

公开(公告)日：2024-05-21

申请号：US18163617

申请日：2023-02-02

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Wataru Shiroi ,  Shuuichi Kariyazaki

IPC: H01L23/498 ,  H01L23/00

CPC classification number: H01L23/49822 ,  H01L23/49816 ,  H01L23/49838 ,  H01L23/49894 ,  H01L24/15

Abstract: A semiconductor device comprising a wiring member with which a semiconductor chip is electrically connected including: a first wiring layer having a plurality of first conductive patterns; a second wiring layer arranged next to the first wiring layer in a thickness direction of the wiring member, and having a second conductive pattern; and a third wiring layer arranged next to the second wiring layer in the thickness direction of the wiring member, and having a third conductive pattern. Here, in plan view, a first opening portion of each of two, which are arranged next to each other, of a plurality of first opening portions each penetrating through the second conductive pattern is overlapped with a pair of differential signal wirings contained in plurality of first conductive patterns, and is overlapped with two or more of a plurality of second opening portions each penetrating through the third conductive pattern.

公开(公告)号：US09087709B2

公开(公告)日：2015-07-21

申请号：US14553835

申请日：2014-11-25

Applicant: Renesas Electronics Corporation

Inventor： Makoto Okada ,  Shuuichi Kariyazaki ,  Wataru Shiroi ,  Masafumi Suzuhara ,  Naoko Sera

IPC: H01L23/34 ,  H01L25/065 ,  H01L23/498 ,  H01L23/00 ,  H01L23/02 ,  H01L23/28 ,  H01L23/04 ,  H01L23/055

CPC classification number: H01L25/0655 ,  H01L23/02 ,  H01L23/04 ,  H01L23/055 ,  H01L23/28 ,  H01L23/498 ,  H01L23/49816 ,  H01L23/562 ,  H01L24/33 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/3224 ,  H01L2224/32245 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/92125 ,  H01L2924/1015 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/16152 ,  H01L2924/16251 ,  H01L2924/167 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/19106 ,  H01L2924/3511 ,  H01L2924/00012 ,  H01L2924/00

Abstract: A semiconductor device includes a main surface, a back surface opposite to the main surface, a first side on the main surface, a second side opposite to the first side, a third side between the first side and the second side, a fourth side opposite to the third side, a first point on a periphery of the main surface between the first side and the third side, a second point on the periphery of the main surface between the second side and the fourth side, a third point on the periphery of the main surface between the first side and the fourth side, anda fourth point on the periphery of the main surface between the third side and the second side, a first semiconductor chip disposed over the main surface of the substrate, and a second semiconductor chip disposed over the main surface of the substrate.

Abstract translation: 半导体器件包括主表面，与主表面相对的后表面，主表面上的第一侧，与第一侧相对的第二侧，第一侧和第二侧之间的第三侧，与第一侧相对的第四侧 在第三侧，在第一侧面和第三面之间的主表面的周边上的第一点，在第二侧面和第四侧面之间的主表面的周边上的第二点， 第一侧面和第四侧面之间的主表面以及位于第三侧面和第二侧面之间的主表面周边的第四点，设置在基板的主表面上的第一半导体芯片和第二半导体芯片 设置在基板的主表面上。

公开(公告)号：US08922001B2

公开(公告)日：2014-12-30

申请号：US14093337

申请日：2013-11-29

Applicant: Renesas Electronics Corporation

Inventor： Makoto Okada ,  Shuuichi Kariyazaki ,  Wataru Shiroi ,  Masafumi Suzuhara ,  Naoko Sera

IPC: H01L23/34 ,  H01L23/02 ,  H01L23/498 ,  H01L23/28 ,  H01L25/065

CPC classification number: H01L25/0655 ,  H01L23/02 ,  H01L23/04 ,  H01L23/055 ,  H01L23/28 ,  H01L23/498 ,  H01L23/49816 ,  H01L23/562 ,  H01L24/33 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/3224 ,  H01L2224/32245 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/92125 ,  H01L2924/1015 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/16152 ,  H01L2924/16251 ,  H01L2924/167 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/19106 ,  H01L2924/3511 ,  H01L2924/00012 ,  H01L2924/00

Abstract: A semiconductor device in which warpage is less likely to occur. In the semiconductor device, two semiconductor chips are mounted over a diagonal of a substrate and one of the semiconductor chips lies over the intersection of the two diagonals of the substrate. The semiconductor device gives a solution to the following problem. In order to implement a semiconductor device with a plurality of semiconductor chips mounted on a substrate, generally the substrate must have a larger area. If the area of the substrate is increased without an increase in its thickness, warpage or deformation of the semiconductor device is more likely to occur. It is difficult or impossible to mount a warped or deformed semiconductor device over a wiring substrate.

Abstract translation: 其中翘曲不太可能发生的半导体器件。 在半导体器件中，两个半导体芯片安装在衬底的对角线上，并且半导体芯片之一位于衬底的两个对角线的交叉点之上。 半导体器件给出了以下问题的解决方案。 为了实现具有安装在基板上的多个半导体芯片的半导体器件，通常基板必须具有更大的面积。 如果基板的面积增加而不增加其厚度，则更可能发生半导体器件的翘曲或变形。 将翘曲或变形的半导体器件安装在布线基板上是困难或不可能的。