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    SEMICONDUCTOR DEVICE
    1.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20140167207A1

    公开(公告)日：2014-06-19

    申请号：US14095304

    申请日：2013-12-03

    Applicant: Renesas Electronics Corporation

    Inventor： Yoshinori KAYA ,  Yasushi NAKAHARA

    IPC: H01L27/02

    CPC classification number: H01L27/0207 ,  H01L21/761 ,  H01L27/0635 ,  H01L27/0814 ,  H01L29/0649 ,  H01L29/402 ,  H01L29/404 ,  H01L29/66128 ,  H01L29/861 ,  H01L29/8611

    Abstract: A potential isolation element is provided separately from a diode. An n-type low-concentration region is formed on a P-type layer. A first high-concentration N-type region is positioned in the n-type low-concentration region and is connected to a cathode electrode of the diode. A second high-concentration N-type region is positioned in the n-type low-concentration region, is disposed to be spaced from a first second-conduction-type high-concentration region, and is connected to a power supply interconnection of a first circuit. A first P-type region is formed in the n-type low-concentration region, and a bottom portion thereof is connected to the P-type layer. A ground potential is applied to the first P-type region, and the first P-type region is positioned in the vicinity of the first high-concentration N-type region.

    Abstract translation: 与二极管分开提供电势隔离元件。 在P型层上形成有n型低浓度区域。 第一高浓度N型区域位于n型低浓度区域中并连接到二极管的阴极电极。 第二高浓度N型区域位于n型低浓度区域中，与第一第二导电型高浓度区域隔开，并且与第一高浓度区域的电源互连 电路。 在n型低浓度区域形成第一P型区域，其底部与P型层连接。 接地电位施加到第一P型区域，第一P型区域位于第一高浓度N型区域附近。

    SEMICONDUCTOR DEVICE
    3.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20150243731A1

    公开(公告)日：2015-08-27

    申请号：US14711754

    申请日：2015-05-13

    Applicant: Renesas Electronics Corporation

    Inventor： Yoshinori KAYA ,  Yasushi NAKAHARA

    IPC: H01L29/06 ,  H01L27/02 ,  H01L29/40

    CPC classification number: H01L29/0642 ,  H01L21/761 ,  H01L21/823481 ,  H01L27/0207 ,  H01L29/0653 ,  H01L29/0878 ,  H01L29/402 ,  H01L29/404 ,  H01L29/42368 ,  H01L29/7816

    Abstract: An isolation region includes an element isolation film and a field plate electrode. The field plate electrode overlaps the element isolation film and surrounds a first circuit when seen in a plan view. A part of the field plate electrode is also positioned on a connection transistor. A source and a drain of the connection transistor are opposite to each other through the field plate electrode when seen in a plan view. In addition, the field plate electrode is divided into a first portion including a portion that is positioned on the connection transistor, and a second portion other than the first portion.

    Abstract translation: 隔离区域包括元件隔离膜和场板电极。 当在平面图中看时，场板电极与元件隔离膜重叠并围绕第一电路。 场板电极的一部分也位于连接晶体管上。 当在平面图中看时，连接晶体管的源极和漏极彼此相对通过场板电极。 此外，场板电极被分成包括位于连接晶体管上的部分的第一部分和除第一部分之外的第二部分。

    SEMICONDUCTOR DEVICE
    8.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20150262990A1

    公开(公告)日：2015-09-17

    申请号：US14714111

    申请日：2015-05-15

    Applicant: Renesas Electronics Corporation

    Inventor： Ryo KANDA ,  Tetsu TODA ,  Yasushi NAKAHARA ,  Yoshinori KAYA

    IPC: H01L27/02 ,  H01L29/40 ,  H01L29/06 ,  H01L29/78

    CPC classification number: H01L27/0207 ,  H01L21/761 ,  H01L29/0653 ,  H01L29/1083 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/404 ,  H01L29/42368 ,  H01L29/7816 ,  H01L29/7835

    Abstract: A field plate electrode is repetitively disposed in a folded manner or a spiral shape in a direction along an edge of a first circuit region. A coupling transistor couples a first circuit to a second circuit lower in supply voltage than the first circuit. A second conductivity type region is disposed around the coupling transistor. A part of the field plate electrode partially overlaps with the second conductivity type region. The field plate electrode is electrically coupled to a drain electrode of the coupling transistor at a portion located on the first circuit region side from a center thereof in a width direction of the separation region. A ground potential or a power potential of the second circuit is applied to the field plate electrode at a portion located on the second conductivity type region side from the center.

    Abstract translation: 场板电极在沿着第一电路区域的边缘的方向上以折叠方式或螺旋形状重复地布置。 耦合晶体管将第一电路耦合到电源电压低于第一电路的第二电路。 第二导电类型区域设置在耦合晶体管周围。 场板电极的一部分与第二导电类型区域部分重叠。 场平板电极在分离区域的宽度方向上的位于第一电路区域侧的部分的电极上耦合到耦合晶体管的漏电极。 第二电路的接地电位或功率电位在距中心的第二导电类型区域侧的部分施加到场板电极。

    Semiconductor Device
    10.
    发明申请
    Semiconductor Device 有权
    半导体器件

    公开(公告)号：US20150115342A1

    公开(公告)日：2015-04-30

    申请号：US14517657

    申请日：2014-10-17

    Applicant: Renesas Electronics Corporation

    Inventor： Yoshinori KAYA ,  Yasushi NAKAHARA ,  Azuma ARAYA ,  Ryo KANDA ,  Tomonobu KURIHARA ,  Tetsu TODA

    IPC: H01L27/06 ,  H01L29/06

    CPC classification number: H02M1/088 ,  H01L27/0285 ,  H01L27/0292 ,  H01L27/0296 ,  H01L27/0629 ,  H01L27/0922 ,  H01L29/0642 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/1033 ,  H01L29/1079 ,  H01L29/405 ,  H01L29/42368 ,  H01L29/7816 ,  H01L29/7835 ,  H01L29/7838 ,  H03K2017/6875 ,  H03K2217/0081

    Abstract: Provided is a semiconductor device including a substrate of a first conductivity type, a first circuit region, a separation region, a second circuit region, and a rectifying element. The rectifying element has a second conductivity type layer, a first high concentration second conductivity type region, a second high concentration second conductivity type region, an element isolation film, a first insulation layer, and a first conductive film. A first contact is coupled to the first high concentration second conductivity type region, and a second contact is coupled to the second high concentration second conductivity type region. A third contact is coupled to the first conductive film. The first contact, the second contact and the third contact are separated from each other.

    Abstract translation: 提供了包括第一导电类型的衬底，第一电路区域，分离区域，第二电路区域和整流元件的半导体器件。 整流元件具有第二导电类型层，第一高浓度第二导电类型区域，第二高浓度第二导电类型区域，元件隔离膜，第一绝缘层和第一导电膜。 第一触点耦合到第一高浓度第二导电类型区域，第二触点耦合到第二高浓度第二导电类型区域。 第三触点耦合到第一导电膜。 第一触点，第二触点和第三触点彼此分离。

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