公开(公告)号：US20070262397A1

公开(公告)日：2007-11-15

申请号：US11632738

申请日：2005-07-12

申请人： Radu Surdeanu ,  Prabhat Agarwal ,  Abraham Balkenende ,  Erik Bakkers

发明人： Radu Surdeanu ,  Prabhat Agarwal ,  Abraham Balkenende ,  Erik Bakkers

IPC分类号： H01L29/775 ,  H01L21/336

CPC分类号： H01L29/78 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/20 ,  H01L29/76 ,  Y10S438/962 ,  Y10S977/762 ,  Y10S977/818 ,  Y10S977/938

摘要： A transistor device is formed of a continuous linear nanostructure having a source region, a drain region and a channel region between the source and drain regions. The source (20) and drain (26) regions are formed of nanowire ania the channel region (24) is in the form of a nanotube. An insulated gate (32) is provided adjacent to the channel region (24) for controlling conduction i ni the channel region between the source and drain regions.

摘要翻译： 晶体管器件由具有源极区，漏极区和源极和漏极区之间的沟道区的连续线性纳米结构形成。 源极（20）和漏极（26）区域由纳米线形成，沟道区域（24）呈纳米管形式。 绝缘栅极（32）设置成邻近沟道区（24），用于控制源极和漏极区之间的沟道区。

公开(公告)号：US20080029909A1

公开(公告)日：2008-02-07

申请号：US11629657

申请日：2005-06-07

申请人： Erwin Hijzen ,  Erik Bakkers ,  Raymond Hueting ,  Abraham Balkenende

发明人： Erwin Hijzen ,  Erik Bakkers ,  Raymond Hueting ,  Abraham Balkenende

IPC分类号： H01L23/48 ,  H01L21/44

CPC分类号： H01L29/775 ,  B82Y10/00 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/02603 ,  H01L21/02639 ,  H01L21/02653 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/267 ,  H01L29/66666 ,  H01L29/78642 ,  H01L29/78681 ,  H01L29/78696 ,  H01L29/861 ,  H01L29/872 ,  H01L51/0048 ,  H01L51/0052 ,  H01L51/0512 ,  H01L2924/0002 ,  Y10S977/70 ,  Y10S977/701 ,  Y10S977/707 ,  Y10S977/72 ,  Y10S977/721 ,  Y10S977/722 ,  Y10S977/723 ,  Y10S977/742 ,  Y10S977/762 ,  Y10S977/938 ,  H01L2924/00

摘要： Semiconductor devices are fabricated using nanowires 16. A conductive gate 22 may be used to control conduction along the nanowires 16, in which case one of the contacts is a drain 12 and the other a source 18. The nanowires 16 may be grown in a trench or through-hole 8 in a substrate 2 or in particular in epilayer 3 on substrate 2. The gate 22 may be provided only at one end of the nanowires 16. The nanowires 16 can be of the same material along their length; alternatively different materials can be used, especially different materials adjacent to the gate 22 and between the gate 22 and the base of the trench.

摘要翻译： 使用纳米线16制造半导体器件。 可以使用导电栅极22来控制沿着纳米线16的导通，在这种情况下，一个触点是漏极12，另一个是源极18。 纳米线16可以在衬底2中的沟槽或通孔8中生长，或特别是在衬底2上的外延层3中生长。 栅极22可以仅设置在纳米线16的一端。 纳米线16沿其长度可以是相同的材料; 可以使用不同的材料，特别是与栅极22相邻并且在栅极22和沟槽的基底之间的不同材料。

公开(公告)号：US08716629B2

公开(公告)日：2014-05-06

申请号：US13262241

申请日：2010-04-01

申请人： Jasper Klewer ,  Amy Cheung ,  Liesbeth Van Pieterson ,  Erik Bakkers

发明人： Jasper Klewer ,  Amy Cheung ,  Liesbeth Van Pieterson ,  Erik Bakkers

IPC分类号： H05B1/00 ,  G01K1/08

CPC分类号： G01K1/16 ,  A41D13/1281 ,  A61B5/0008 ,  A61B5/01 ,  A61B5/6804 ,  G01K1/14 ,  G01K1/165 ,  G01K13/002 ,  G01K2217/00

摘要： This invention relates to a temperature sensor for body temperature measurements. The temperature sensor is made of several layers, where a first layer has a central heater embedded therein, a second layer which is attached to the first layer has at least one first thermistor embedded therein for measuring a first temperature value, a third layer has at one ore second thermistor embedded therein separated from the first thermistor for measuring at least one second temperature value, but this third layer is adapted to be in contact to the skin of the surface of the body for conducting the heat escaping from the body through the layers. The difference between the first and the second temperature values indicates the heat flux from the body. The heat emitted from central heater is tuned oppositely to the heat flux until a zero heat flux is reached, where the temperature at the at least one second thermistor at zero heat flux indicates the body temperature. These layers are fabric layers.

摘要翻译： 本发明涉及一种用于体温测量的温度传感器。 温度传感器由多层构成，其中第一层具有嵌入其中的中央加热器，附接到第一层的第二层具有嵌入其中的至少一个第一热敏电阻，用于测量第一温度值，第三层具有 嵌入其中的与第一热敏电阻分离的一个第二热敏电阻用于测量至少一个第二温度值，但是该第三层适于与身体表面的皮肤接触，用于导致从身体排出的热量通过层 。 第一和第二温度值之间的差值表示来自身体的热通量。 从中央加热器发出的热量与热通量相反地调节，直到达到零热通量，其中在零热通量下的至少一个第二热敏电阻的温度表示体温。 这些层是织物层。

公开(公告)号：US20120024833A1

公开(公告)日：2012-02-02

申请号：US13262241

申请日：2010-04-01

申请人： Jasper Klewer ,  Amy Cheung ,  Liesbeth Van Pieterson ,  Erik Bakkers

发明人： Jasper Klewer ,  Amy Cheung ,  Liesbeth Van Pieterson ,  Erik Bakkers

IPC分类号： H05B1/00

CPC分类号： G01K1/16 ,  A41D13/1281 ,  A61B5/0008 ,  A61B5/01 ,  A61B5/6804 ,  G01K1/14 ,  G01K1/165 ,  G01K13/002 ,  G01K2217/00

摘要： This invention relates to a temperature sensor for body temperature measurements. The temperature sensor is made of several layers, where a first layer has a central heater embedded therein, a second layer which is attached to the first layer has at least one first thermistor embedded therein for measuring a first temperature value, a third layer has at one ore second thermistor embedded therein separated from the first thermistor for measuring at least one second temperature value, but this third layer is adapted to be in contact to the skin of the surface of the body for conducting the heat escaping from the body through the layers. The difference between the first and the second temperature values indicates the heat flux from the body. The heat emitted from central heater is tuned oppositely to the heat flux until a zero heat flux is reached, where the temperature at the at least one second thermistor at zero heat flux indicates the body temperature. These layers are fabric layers.

摘要翻译： 本发明涉及一种用于体温测量的温度传感器。 温度传感器由多层构成，其中第一层具有嵌入其中的中央加热器，附接到第一层的第二层具有嵌入其中的至少一个第一热敏电阻，用于测量第一温度值，第三层具有 嵌入其中的与第一热敏电阻分离的一个第二热敏电阻用于测量至少一个第二温度值，但是该第三层适于与身体表面的皮肤接触，用于导致从身体排出的热量通过层 。 第一和第二温度值之间的差值表示来自身体的热通量。 从中央加热器发出的热量与热通量相反地调节，直到达到零热通量，其中在零热通量下的至少一个第二热敏电阻的温度表示体温。 这些层是织物层。

公开(公告)号：US20070257246A1

公开(公告)日：2007-11-08

申请号：US11575585

申请日：2005-08-19

申请人： Erik Bakkers ,  Martijn Lankhorst

发明人： Erik Bakkers ,  Martijn Lankhorst

IPC分类号： H01L29/12 ,  H01L21/20

CPC分类号： H01L27/2409 ,  B82Y10/00 ,  G11C13/0004 ,  G11C13/025 ,  H01L27/2436 ,  H01L27/2481 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/148 ,  H01L45/1625 ,  Y10S977/762

摘要： The method according to the invention is directed to manufacturing an electric device (100) according to the invention, having a body (102) with a resistor comprising a phase change material being changeable between a first phase and a second phase, the resistor having a first electrical resistance when the phase change material is in the first phase, and a second electrical resistance different from the first electrical resistance when the phase change material is in the second phase. The resistor is a nanowire (NW) electrically connecting a first conductor (172, 120) and a second conductor (108, 121). The method comprises the step of providing a body (102) having the first conductor (172, 120), providing the first conductor (172, 120) with the nanowire (NW) thereby electrically connecting the nanowire (NW) and the first conductor (172, 120), and providing the nanowire (NW) with the second conductor (108, 121) thereby electrically connecting the nanowire (NW) and the second conductor (108, 121).

摘要翻译： 根据本发明的方法涉及制造根据本发明的电子设备（100），其具有主体（102），其具有电阻器，该电阻器包括在第一相位和第二相位之间可变的相变材料，所述电阻器具有 当所述相变材料处于所述第一阶段时，所述第一电阻以及当所述相变材料处于所述第二相时与所述第一电阻不同的第二电阻。 电阻器是电连接第一导体（172,120）和第二导体（108,121）的纳米线（NW）。 该方法包括提供具有第一导体（172,120）的主体（102）的步骤，为第一导体（172,120）提供纳米线（NW），从而电连接纳米线（NW）和第一导体（ 并且为纳米线（NW）提供第二导体（108,121），由此电连接纳米线（NW）和第二导体（108,121）。