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公开(公告)号：US20120153547A1
公开(公告)日：2012-06-21
申请号：US13406299
申请日：2012-02-27
IPC分类号： C04B35/622
CPC分类号： C01F7/02 , B82Y30/00 , C01F7/021 , C01F7/442 , C01P2004/04 , C01P2004/32 , C01P2004/62 , C01P2004/64 , C01P2006/12 , C01P2006/36 , C09G1/02 , C09K3/1409 , Y10T428/2982
摘要： Processes for forming ceramic particulate material. The ceramic particulate material includes alumina particles, the particles having a specific surface area (SSA) not less than 15 m2/g and not greater than 75 m2/g and a sphericity quantified by at least one of (i) a mean roundness not less than 0.710 as measured by Roundness Correlation Image Analysis, and (ii) a concavity less than 20%, wherein concavity is the percent of alumina particles based on a sample of at least 100 particles, which have a concave outer peripheral portion that extends along a distance not less than 10% of d50 by TEM inspection, the concave outer peripheral portion having a negative radius of curvature as viewed from an interior of the particle.
摘要翻译： 用于形成陶瓷颗粒材料的方法。 陶瓷颗粒材料包括氧化铝颗粒，具有不小于15m 2 / g且不大于75m 2 / g的比表面积（SSA）的颗粒和通过以下至少一种量化的球形度（i）平均圆度不小于 通过圆度相关图像分析测量的0.710，以及（ii）小于20％的凹度，其中凹面是基于至少100个颗粒的样品的氧化铝颗粒的百分比，其具有沿着 通过TEM检查距离不小于d50的10％，凹形外周部分从颗粒内部观察到具有负曲率半径。
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公开(公告)号：US20080176075A1
公开(公告)日：2008-07-24
申请号：US12014418
申请日：2008-01-15
CPC分类号： C01F7/02 , B82Y30/00 , C01F7/021 , C01F7/442 , C01P2004/04 , C01P2004/32 , C01P2004/62 , C01P2004/64 , C01P2006/12 , C01P2006/36 , C09G1/02 , C09K3/1409 , Y10T428/2982
摘要： Ceramic particulate material includes alumina particles, the particles having a specific surface area (SSA) not less than 15 m2/g and not greater than 75 m2/g and a sphericity quantified by at least one of (i) a mean roundness not less than 0.710 as measured by Roundness Correlation Image Analysis, and (ii) a concavity less than 20%, wherein concavity is the percent of alumina particles based on a sample of at least 100 particles, which have a concave outer peripheral portion that extends along a distance not less than 10% of d50 by TEM inspection, the concave outer peripheral portion having a negative radius of curvature as viewed from an interior of the particle
摘要翻译： 陶瓷颗粒材料包括氧化铝颗粒，具有不小于15m 2 / g且不大于75m 2 / g的比表面积（SSA）的颗粒和 通过圆度相关图像分析测量的（i）不小于0.710的平均圆度和（ii）小于20％的凹度中的至少一个来定量球形度，其中凹面是基于在...的样品的氧化铝颗粒的百分比 至少100个颗粒，其具有通过TEM检查沿着不小于d 50的距离延伸的凹形外周部分，所述凹形外周部分具有从 颗粒内部
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公开(公告)号：US08343415B2
公开(公告)日：2013-01-01
申请号：US13406299
申请日：2012-02-27
IPC分类号： C04B35/645
CPC分类号： C01F7/02 , B82Y30/00 , C01F7/021 , C01F7/442 , C01P2004/04 , C01P2004/32 , C01P2004/62 , C01P2004/64 , C01P2006/12 , C01P2006/36 , C09G1/02 , C09K3/1409 , Y10T428/2982
摘要： Processes for forming ceramic particulate material. The ceramic particulate material includes alumina particles, the particles having a specific surface area (SSA) not less than 15 m2/g and not greater than 75 m2/g and a sphericity quantified by at least one of (i) a mean roundness not less than 0.710 as measured by Roundness Correlation Image Analysis, and (ii) a concavity less than 20%, wherein concavity is the percent of alumina particles based on a sample of at least 100 particles, which have a concave outer peripheral portion that extends along a distance not less than 10% of d50 by TEM inspection, the concave outer peripheral portion having a negative radius of curvature as viewed from an interior of the particle.
摘要翻译： 用于形成陶瓷颗粒材料的方法。 陶瓷颗粒材料包括氧化铝颗粒，具有不小于15m 2 / g且不大于75m 2 / g的比表面积（SSA）的颗粒和通过以下至少一种量化的球形度（i）平均圆度不小于 通过圆度相关图像分析测量的0.710，以及（ii）小于20％的凹度，其中凹面是基于至少100个颗粒的样品的氧化铝颗粒的百分比，其具有沿着 通过TEM检查距离不小于d50的10％，凹形外周部分从颗粒内部观察到具有负曲率半径。
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公开(公告)号：US08105135B2
公开(公告)日：2012-01-31
申请号：US11541431
申请日：2006-09-29
IPC分类号： B24D3/06
CPC分类号： C09K3/1409 , C09G1/02 , C09K3/1463 , C09K3/1472 , H01L21/02024 , H01L29/1608 , Y10T428/2993
摘要： A polishing slurry includes liquid medium and particulate abrasive. The particulate abrasive includes soft abrasive particles, hard abrasive particles, and colloidal silica particles, wherein the soft abrasive particles have a Mohs hardness of not greater than 8 and the hard abrasive particles have a Mohs hardness of not less than 8, and wherein the soft abrasive particles and the hard abrasive particles are present at a weight ratio of not less than 2:1.
摘要翻译： 抛光浆料包括液体介质和颗粒磨料。 颗粒磨料包括软磨粒，硬磨颗粒和胶态二氧化硅颗粒，其中软磨颗粒的莫氏硬度不大于8，硬磨颗粒的莫氏硬度不小于8，其中软 研磨颗粒和硬磨料颗粒以不小于2:1的重量比存在。
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公开(公告)号：US20090111678A1
公开(公告)日：2009-04-30
申请号：US11927326
申请日：2007-10-29
申请人： Andrew G. Haerle , Edward A. Perry
发明人： Andrew G. Haerle , Edward A. Perry
IPC分类号： C04B35/565
CPC分类号： C04B35/565 , C04B2235/3821 , C04B2235/3826 , C04B2235/421 , C04B2235/5436 , C04B2235/5472 , C04B2235/656 , C04B2235/72 , C04B2235/722 , C04B2235/77 , C04B2235/96 , C04B2235/9607
摘要： A recrystallized silicon carbide body is provided that has a resistivity of not less than about 1E5 Ωcm and a nitrogen content comprising nitrogen atoms bonded within the body, wherein the nitrogen content is not greater than about 200 ppm.
摘要翻译： 提供了一种重结晶的碳化硅体，其具有不小于约1小于5微米的电阻率和包含结合在体内的氮原子的氮含量，其中氮含量不大于约200ppm 。
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6.发明授权Method for treating semiconductor processing components and components formed thereby 有权用于处理由此形成的半导体处理部件和部件的方法公开(公告)号：US06825123B2
公开(公告)日：2004-11-30
申请号：US10414563
申请日：2003-04-15
IPC分类号： H01L21311
CPC分类号： C04B41/459 , C01B32/956 , C01P2006/80 , C04B35/565 , C04B35/62222 , C04B41/009 , C04B41/80 , C04B2235/3826 , C04B2235/428 , C04B2235/72 , C04B2235/80 , C04B2235/963 , H01L21/6733 , Y10T428/12576 , Y10T428/26 , C04B41/4519 , C04B41/4556 , C04B41/5035
摘要： A method for treating a semiconductor processing component, including: exposing the component to a halogen gas at an elevated temperature, oxidizing the component to form an oxide layer, and removing the oxide layer.
摘要翻译： 一种处理半导体处理组件的方法，包括：将组分在升高的温度下暴露于卤素气体，氧化组分以形成氧化物层，并除去氧化物层。
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公开(公告)号：US06554909B1
公开(公告)日：2003-04-29
申请号：US10010470
申请日：2001-11-08
申请人： Andrew G. Haerle , Edward A. Perry
发明人： Andrew G. Haerle , Edward A. Perry
IPC分类号： B08B700
CPC分类号： B24C1/086 , B24C1/003 , B24C11/00 , Y10S134/902
摘要： A method for cleaning a semiconductor processing component is provided. The process calls for directing a stream of cleaning media at a surface of the component, the cleaning media including zirconia. After cleaning with the cleaning media, frozen CO2 (dry ice) pellets may be directed at the surface to further clean the component.
摘要翻译： 提供一种清洁半导体处理部件的方法。 该过程要求在组件的表面处引导清洁介质流，清洁介质包括氧化锆。 用清洁介质清洁后，冷冻的二氧化碳（干冰）颗粒可以被引导到表面以进一步清洁组件。
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公开(公告)号：US07727919B2
公开(公告)日：2010-06-01
申请号：US11927326
申请日：2007-10-29
申请人： Andrew G. Haerle , Edward A. Perry
发明人： Andrew G. Haerle , Edward A. Perry
IPC分类号： C04B35/565
CPC分类号： C04B35/565 , C04B2235/3821 , C04B2235/3826 , C04B2235/421 , C04B2235/5436 , C04B2235/5472 , C04B2235/656 , C04B2235/72 , C04B2235/722 , C04B2235/77 , C04B2235/96 , C04B2235/9607
摘要： A recrystallized silicon carbide body is provided that has a resistivity of not less than about 1E5 Ω cm and a nitrogen content comprising nitrogen atoms bonded within the body, wherein the nitrogen content is not greater than about 200 ppm.
摘要翻译： 提供了具有不小于约1E5＆OHgr的电阻率的再结晶碳化硅体; cm，氮含量包含结合在体内的氮原子，其中氮含量不大于约200ppm。
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9.发明授权公开(公告)号：US06881262B1
公开(公告)日：2005-04-19
申请号：US10328251
申请日：2002-12-23
申请人： Andrew G. Haerle , Han C. Chang
发明人： Andrew G. Haerle , Han C. Chang
CPC分类号： C30B35/00
摘要： A method of forming a component is disclosed. The method includes: providing a core containing a porous material; infiltrating the core with silicon carbide; and removing the porous material of the core, thereby forming a porous substrate containing silicon carbide.
摘要翻译： 公开了一种形成部件的方法。 该方法包括：提供含有多孔材料的芯; 用碳化硅渗透芯体; 并除去芯的多孔材料，从而形成含有碳化硅的多孔基材。
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10.发明授权Semiconductor processing component having low surface contaminant concentration 有权具有低表面污染物浓度的半导体加工部件公开(公告)号：US06723437B2
公开(公告)日：2004-04-20
申请号：US10078930
申请日：2002-02-19
申请人： Andrew G. Haerle , Gerald S. Meder
发明人： Andrew G. Haerle , Gerald S. Meder
IPC分类号： B22B900
CPC分类号： B24C1/086 , B24C1/003 , B24C3/322 , C04B41/009 , C04B41/53 , C04B41/91 , C23C16/4407 , H01L21/67028 , H01L21/67069 , Y10S134/902 , C04B41/5346 , C04B41/5353 , C04B35/00 , C04B35/565
摘要： A method for cleaning ceramic workpieces such as SiC boats used in semiconductor fabrication is disclosed. The method comprises washing a virgin or used ceramic workpiece with a strong acid and then using a pelletized CO2 cleaning process on the acid-washed component. The inventive method has been found to produce a workpiece having a very low level of metallic and particulate contaminants on its surface.
摘要翻译： 公开了一种用于清洁半导体制造中使用的诸如SiC舟皿的陶瓷工件的方法。 该方法包括用强酸洗涤原始或用过的陶瓷工件，然后在酸洗组分上使用颗粒状二氧化碳清洗方法。 已经发现本发明的方法产生在其表面上具有非常低水平的金属和颗粒污染物的工件。
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