摘要:
A resonant converter, including a transformer for separating a high-voltage (primary) side from a relatively low-voltage (secondary) side, has at least one synchronous rectifier and an auxiliary sense winding coupled to the gate thereof. The input capacitances of the synchronous rectifiers are reflected to the primary side and the secondary side by the square of the ratio of the number of auxiliary sense winding turns to the number of primary andsecondary winding turns, respectively, thereby reducing the required size of the discrete resonant capacitor. In one embodiment, a gate bias voltage approximately equal to the device threshold voltage is applied to the gate of the synchronous rectifiers. The auxiliary sense windings are etched into a conductive film pattern of the secondary windings. The auxiliary sense windings provide nearly identical secondary and gate drive voltages so that the synchronous rectifiers are gated substantially at the zero-voltage crossings of the secondary winding voltages. The result is a substantially lossless gate drive for synchronous rectifiers in high power density resonant converters.
摘要:
A transformer having a very low, predetermined leakage inductance includes an elongate dielectric laminate having two surfaces. A primary winding having a pattern conformal to the configuration of the laminate is disposed on one surface and extends substantially the length of the laminate. The laminate has at least one secondary winding disposed on its other surface. The laminate is rolled with a dielectric layer about a cylinder, and the primary and secondary windings are patterned such that the primary and secondary windings comprise interleaved winding layers with the dielectric layer disposed between each of the winding layers. The rolled laminate, dielectric layer, and windings are contained within a cylindrical magnetic pot core. The result is a transformer having tightly interleaved primary and secondary windings and, therefore, a very low leakage inductance. In addition, the distance between adjacent primary and secondary turns is fixed by the thickness of the dielectric layer; hence, the leakage inductance is highly predictable.
摘要:
A high-frequency, low-profile transformer having at least one pair of magnetic poles includes a primary winding having a z-folded, continuous primary conductive film with a generally serpentine configuration disposed on a primary dielectric membrane and further includes a z-folded, continuous secondary winding constructed from a plurality of secondary conductive film portions disposed on a secondary dielectric membrane. Each of the secondary conductive film portions is configured to form a single continuous path enclosing each of the magnetic poles in such manner that each path encloses one pole of each pair of the magnetic poles of each adjacent layer of the secondary winding. Each path thus continues along a respective fold of the winding stack. The secondary winding layers are interleaved with the primary winding layers and electrically connected together. In one preferred embodiment, the transformer has two pairs of magnetic poles, and each path formed by each secondary conductive film has a shape characterized as two generally ovoid portions connected together at a relatively wide midportion. Low-resistance conductive bridges are used to electrically connect the secondary conductive film portions together along alternate folds of the winding stack.
摘要:
A conductive film magnetic component such as an inductor or transformer includes a conductive film winding having a generally serpentine configuration when disposed in a plane. This film is folded to form a stack of layers with each "layer" comprising part of a winding turn and with successive "layers" connected at the folds via the continuous conductive film. The conductive film may be self-supporting and coated with a dielectric layer or may be disposed on a dielectric membrane. The film and membrane are preferably patterned photolithographically.
摘要:
A method for producing a hole in a polymer film includes the steps of depositing a conductive layer onto the polymer film and irradiating a spot on the layer with a burst of focused laser energy at a level sufficient to form an opening in the film and, subsequently, plasma etching the film so as to form a hole of desired depth in the polymer film underlying the opening in the conductive layer. This method is particularly applicable to the formation of multichip intergrated circuit packages in which a plurality of chips formed in a semiconductor wafer are coated with a polymer film covering the chips and the substrates. The holes are provided for the purpose of interconnecting selected chip contact pads via a deposited conductive layer which overlies the film and fills the holes.
摘要:
A multilayer passivation-encapsulation for a semiconductor element is provided by a suitable polymer layer disposed on the device and overcoated with a glass layer for hermeticity.
摘要:
A transformer having a barrel winding comprised of flat conductive film conductors is provided with a repeatable winding configuration by employing a dielectric metal laminate as the winding material and by patterning both primary and secondary windings on the same dielectric membrane, thereby fixing the relative positions of the primary winding and secondary winding terminals and conductors.
摘要:
A conductive film magnetic component such as an inductor or transformer includes a conductive film winding having a generally serpentine configuration when disposed in a plane. This film is folded to form a stack of layers with each "layer" comprising part of a winding turn and with successive "layers" connected at the folds via the continuous conductive film. The conductive film may be self-supporting and coated with a dielectric layer or may be disposed on a dielectric membrane. The film and membrane are preferably patterned photolithographically.
摘要:
An additive process allowing discretionary interconnection of only the acceptable devices on a semiconductor wafer includes screen printing a polyimide layer over the wafer to form vias over all of the device contact pads on the wafer while coating the remainder of the wafer. The devices are then individually tested through the vias and, when a device is determined to be unacceptable according to predetermined specifications, the vias above that device are filled with polyimide. A layer of metal is next deposited over the entire wafer by evaporation and makes electrical contact with only the acceptable devices since the unacceptable devices have been blocked off. The metal layer is thereafter patterned to leave an interconnection pattern wherein only the acceptable devices on the wafer are electrically connected.
摘要:
A method for fabricating a composite semiconductor from a plurality of substantially identical individual semiconductor devices formed on a common semiconductor wafer includes testing the devices on the wafer to generate a positional mapping of acceptable and non-acceptable devices, dividing the wafer into a plurality of areas of arbitrary size, connecting corresponding contact pads on only the acceptable devices within a given area to each other via common conductive paths which are supported on a dielectric film covering the pads, the film having appropriately located holes filled with conductive material to electrically couple the common conductive paths and the underlying contact pads of only the acceptable devices. The devices within a given area are intercoupled in a manner to form an operational array; single or multiple arrays may be coupled together to form a composite package having common external contacts and heat sink supports.