摘要:
A multi-zone, combinatorial, single wafer showerhead is used to concurrently develop hardware, materials, unit processes, and unit process sequences. The multi-zone, combinatorial, single wafer showerhead utilizes showerhead pucks to perform process sequences on isolated regions of a single substrate. The showerhead pucks are designed so that they are easily interchangeable to allow the characterization of the interaction between hardware characteristics, process parameters, and their influence on the result of the process sequence.
摘要:
In some embodiments of the present invention, a shield is provided wherein the shield comprises a ceramic insulation material. The ceramic insulation material fills the space between the shield and the substrate surface and maintains a gap of less than about 2 mm and advantageously, less than about 1 mm. The shield may further be connected to ground through a low-pass filter operable to prevent the loss of high frequency RF power through the shield to ground but allow the dissipation of charge from the shield to ground through a low frequency or DC signal. In some embodiments, the ceramic insulating material further comprises a removable ceramic insert. The ceramic insert may be used to select the size of the aperture. The ceramic insert further comprises a slot operable to isolate the bottom lip of the ceramic insert from the upper portion for a PVD deposition.
摘要:
A protective chuck is magnetically levitated on a substrate with a gas layer between the bottom surface of the protective chuck and the substrate surface. The gas layer protects a surface region of the substrate against a fluid layer covering the remaining of the substrate surface without contacting the substrate, reducing or eliminating potential damage to the substrate surface. The magnetically levitated protective chuck can enable combinatorial processing of a substrate, providing multiple isolated processing regions on a single substrate with different material and processing conditions.
摘要:
A dual purpose processing chamber is provided. The dual purpose processing chamber includes a lid disposed over a top surface of a processing region of the processing chamber. A plurality of sputter guns with a target affixed to one end of each of the sputter guns is included. The plurality of sputter guns extend through the lid of the process chamber, wherein each of the plurality of sputter guns is oriented such that a surface of the target affixed to each gun is angled toward an outer periphery of a substrate. In another embodiment, each of the sputter guns is affixed to an extension arm and the extension arm is configured to enable movement in four degrees of freedom. A method of performing a deposition process is also included.
摘要:
A system and method for combinatorial processing of substrates in a processing chamber. The system includes a plurality of generators for supplying power into the processing chamber. A plurality of sputter guns provides power to different regions of a substrate. A switchbox switches power from a generator to a sputter gun via a plurality of coaxial switches. A controller positioned within the switchbox automatically distributes power from a specific generator to a specific sputter gun under programmable logic control.
摘要:
A sputter source is provided. The sputter source includes a shaft extending through a central region of the sputter source. A first end of the shaft is coupled to a drive and a second end of the shaft is coupled to a bottom plate. A first plate having a ramped surface is included where the first plate is stationary. A second plate having a ramped surface is provided where the second plate is disposed above the first plate such that portions of the ramped surfaces contact each other. The second plate is coupled to the shaft, wherein the second plate is operable to rotate and move axially as the shaft rotates in a first direction and wherein the second plate is operable to remain stationary as the shaft rotates in a second direction.
摘要:
Methods and apparatuses for combinatorial processing using a remote plasma source are disclosed. The apparatus includes a remote plasma source and an inner chamber enclosing a substrate support. An aperture is operable to provide plasma exposure to a site-isolated region on a substrate. A transport system moves the substrate support and is capable of positioning the substrate such that the site-isolated region can be located anywhere on the substrate. Barriers and a gas purge system operate to provide site-isolation. Plasma exposure parameters can be varied in a combinatorial manner. Such parameters include source gases for the plasma generator, plasma filtering parameters, exposure time, gas flow rate, frequency, plasma generator power, plasma generation method, chamber pressure, substrate temperature, distance between plasma source and substrate, substrate bias voltage, or combinations thereof.
摘要:
A protective chuck is magnetically levitated on a substrate with a gas layer between the bottom surface of the protective chuck and the substrate surface. The gas layer protects a surface region of the substrate against a fluid layer covering the remaining of the substrate surface without contacting the substrate, reducing or eliminating potential damage to the substrate surface. The magnetically levitated protective chuck can enable combinatorial processing of a substrate, providing multiple isolated processing regions on a single substrate with different material and processing conditions.
摘要:
An apparatus for combinatorial RF biasing at selectable spots includes one or more RF biasing elements that can be moved to or selectively activated to provide an RF hot spot. The RF hot spot may be selectively provided at various locations of a substrate such as a wafer undergoing combinatorial processing. An RF biasing element may be moved, via a movable arm, to a select location. Alternatively or additionally, more than one RF biasing element may be provided in an array so that an RF biasing element corresponding to the select location is activated. The apparatus may be coupled to or disposed within a substrate support such as a chuck such that the apparatus can operate with a combinatorial processing apparatus.
摘要:
Embodiments provided herein describe substrate processing tools. The substrate processing tools include a housing defining a processing chamber. A substrate support is coupled to the housing and configured to support a substrate within the processing chamber. The substrate has a central axis. A first annular member is moveably coupled to the housing and positioned within the processing chamber. The first annular member circumscribes the central axis of the substrate. A second annular member is moveably coupled to the housing and positioned within the processing chamber. The second annular member circumscribes the central axis of the substrate. Movement of the first annular member and the second annular member relative to the housing changes a flow of processing fluid through the processing chamber.