Lithographic apparatus, control system and device manufacturing method
    4.
    发明申请
    Lithographic apparatus, control system and device manufacturing method 有权
    光刻设备,控制系统和器件制造方法

    公开(公告)号:US20070211233A1

    公开(公告)日:2007-09-13

    申请号:US11373493

    申请日:2006-03-13

    IPC分类号: G03B27/52

    摘要: Lithographic Apparatus, Control System and Device Manufacturing Method An immersion lithographic apparatus is disclosed that has a measurement system or a prediction system for measuring and/or predicting, respectively, an effect associated with a temperature fluctuation of the immersion liquid, and a control system for controlling the or another effect associated with the temperature of the immersion liquid, on the basis of the measurement and/or prediction obtained by the measurement system and/or prediction system, respectively. An associated control system and device manufacturing method is also disclosed.

    摘要翻译: 光刻设备,控制系统和设备制造方法公开了一种浸没式光刻设备,其具有测量系统或预测系统,用于分别测量和/或预测与浸液的温度波动相关的影响,以及用于 基于由测量系统和/或预测系统获得的测量和/或预测,分别控制与浸液的温度相关联的或另一效应。 还公开了一种相关的控制系统和设备制造方法。

    Lithographic apparatus and method

    公开(公告)号:US20060290910A1

    公开(公告)日:2006-12-28

    申请号:US11167945

    申请日:2005-06-28

    IPC分类号: G03B27/42

    摘要: A lithographic apparatus is arranged to project a patterned radiation beam from a patterning device onto a substrate using a projection system. The lithographic apparatus comprises: an illumination system configured to condition a radiation beam; a support constructed to support a patterning device, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam; a substrate table constructed to hold a substrate; a projection system configured to project the patterned radiation beam onto a target portion of the substrate; and a measurement system for measuring the wavefront aberration or other property of the apparatus. The measurement system comprises: a source module at the level of the substrate table for providing an effective source of radiation; and a sensor unit at the level of the support, for receiving radiation from the source module through the projection system for performing the measurement.

    Dedicated metrology stage for lithography applications

    公开(公告)号:US20060219947A1

    公开(公告)日:2006-10-05

    申请号:US11362280

    申请日:2006-02-27

    IPC分类号: G21G5/00 A61N5/00

    摘要: A system and method are used to detect parameters regarding an exposure portion or an exposure beam. The system comprising a substrate stage and a metrology stage. The substrate stage is configured to position a substrate to receive an exposure beam from an exposure portion of a lithography system. The metrology stage has a sensor system thereon that is configured to detected parameters of the exposure system or the exposure beam. In one example, the system is within a lithography system, which further comprises an illumination system, a patterning device, and a projection system. The patterning device patterns a beam of radiation from the illumination system. The projection system, which is located within the exposure portion, projects that pattered beam onto the substrate or the sensor system.