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    METHOD OF FABRICATING AN ELECTRODE FOR A BULK ACOUSTIC RESONATOR
    5.
    发明申请
    METHOD OF FABRICATING AN ELECTRODE FOR A BULK ACOUSTIC RESONATOR 审中-公开
    制造用于大容量声学谐振器的电极的方法

    公开(公告)号：US20100107389A1

    公开(公告)日：2010-05-06

    申请号：US12646084

    申请日：2009-12-23

    申请人： Winfried Nessler ,  Robert Thalhammer ,  Thomas Rainer Herzog ,  Martin Handtmann ,  Lueder Elbrecht

    发明人： Winfried Nessler ,  Robert Thalhammer ,  Thomas Rainer Herzog ,  Martin Handtmann ,  Lueder Elbrecht

    IPC分类号： H04R31/00 ,  H01L41/083 ,  H01L41/22

    CPC分类号： H03H3/02 ,  H03H9/171 ,  H03H9/584 ,  H03H9/585 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49156

    摘要： In one embodiment, a method of producing a resonator in thin-film technology is described. The resonator comprises a piezoelectric layer arranged at least partially between a lower electrode and an upper electrode, the resonator being formed over a substrate. The method comprises: forming the lower electrode of the resonator over the substrate; depositing and patterning an insulating layer over the substrate, the insulating layer comprising a thickness substantially equal to a thickness of the lower electrode; removing a portion of the insulating layer to partially expose a surface of the lower electrode; removing a portion of the insulating layer over the surface of the lower electrode by chemical mechanical polishing; forming the piezoelectric layer over the lower electrode; and producing the upper electrode on the piezoelectric layer.

    摘要翻译： 在一个实施例中，描述了一种制造薄膜技术中的谐振器的方法。 谐振器包括至少部分地布置在下电极和上电极之间的压电层，所述谐振器形成在衬底上。 该方法包括：在衬底上形成谐振器的下电极; 在衬底上沉积和图案化绝缘层，绝缘层包括基本上等于下电极厚度的厚度; 去除所述绝缘层的一部分以部分地暴露所述下电极的表面; 通过化学机械抛光在所述下电极的表面上去除所述绝缘层的一部分; 在下电极上形成压电层; 并在压电层上制造上电极。

    Bulk acoustic resonator structures comprising a single material acoustic coupling layer comprising inhomogeneous acoustic property
    10.
    发明授权
    Bulk acoustic resonator structures comprising a single material acoustic coupling layer comprising inhomogeneous acoustic property 失效
    包括包含不均匀声学特性的单一材料声耦合层的体声波谐振器结构

    公开(公告)号：US08283999B2

    公开(公告)日：2012-10-09

    申请号：US12710640

    申请日：2010-02-23

    申请人： Lueder Elbrecht ,  Robert Thalhammer

    发明人： Lueder Elbrecht ,  Robert Thalhammer

    IPC分类号： H03H9/205 ,  H03H9/54

    CPC分类号： H03H9/584 ,  H03H9/587

    摘要： In accordance with a representative embodiment, a BAW resonator structure comprises: a first BAW resonator comprising a first lower electrode, a first upper electrode and a first piezoelectric layer disposed between the first lower electrode and the first upper electrode; and a second BAW resonator comprising a second lower electrode, a second upper electrode and a second piezoelectric layer disposed between the second lower electrode and the second upper electrode. The BAW resonator structure also comprises a single-material acoustic coupling layer disposed between the first and second BAW resonators. The single-material acoustic coupling layer comprises an inhomogeneous acoustic property across a thickness of the single-material acoustic coupling layer.

    摘要翻译： 根据代表性实施例，BAW谐振器结构包括：第一BAW谐振器，包括第一下电极，第一上电极和设置在第一下电极和第一上电极之间的第一压电层; 以及第二BAW谐振器，包括设置在第二下电极和第二上电极之间的第二下电极，第二上电极和第二压电层。 BAW谐振器结构还包括设置在第一和第二BAW谐振器之间的单一材料声耦合层。 单材料声耦合层包括穿过单材料声耦合层的厚度的不均匀的声学性质。