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公开(公告)号：US4143544A
公开(公告)日：1979-03-13
申请号：US809004
申请日：1977-06-22
申请人： Robert C. DeVries , Roy E. Tuft
发明人： Robert C. DeVries , Roy E. Tuft
CPC分类号： G01N33/381 , G01N27/60
摘要： A diamond or cubic boron nitride crystal containing growth discontinuities resulting from changes in the environment of the growing crystal and having at least one smooth outside surface which intersects the growth discontinuities is charged electrostatically, a fine powder is applied to the charged smooth surface and the applied powder produces a pattern on the charged surface which is a delineation of the intersected growth discontinuities.
摘要翻译： 包含由生长晶体的环境变化而产生的具有与生长不连续相交的至少一个平滑外表面的生长不连续性的金刚石或立方氮化硼晶体静电充电，将细粉末施加到带电的光滑表面上， 粉末在带电表面上产生图案，其是相交的生长不连续性的描绘。
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公开(公告)号：US4316385A
公开(公告)日：1982-02-23
申请号：US160464
申请日：1980-06-18
申请人： Robert C. DeVries , Roy E. Tuft
发明人： Robert C. DeVries , Roy E. Tuft
CPC分类号： G01N33/381 , G01N27/60
摘要： A smooth surface of a diamond or cubic boron nitride crystal is bombarded with ions sufficiently to penetrate the surface and impart an ion implanted region in the crystal in a predetermined pattern, the resulting crystal is charged electrostatically, and a powder is applied to the charged smooth surface producing a pattern thereon which is a delineation of the implanted region and can be used to identify or fingerprint the crystal.
摘要翻译： 金刚石或立方氮化硼晶体的光滑表面被足够的离子轰击以穿透表面并以预定图案赋予晶体中的离子注入区域，所得晶体静电充电，并将粉末施加到带电光滑 表面产生其上的图案，其是植入区域的描绘，并且可以用于识别或指纹晶体。
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公开(公告)号：US4231195A
公开(公告)日：1980-11-04
申请号：US42237
申请日：1979-05-24
CPC分类号： C04B35/52 , B01J3/062 , B24D3/08 , C04B35/6316 , C04B35/645 , C22C26/00 , B01J2203/062 , B01J2203/0645 , B01J2203/0655 , B01J2203/066 , B01J2203/0685 , C04B2235/3826 , C04B2235/3834 , C04B2235/3839 , C04B2235/3843 , C04B2235/3847 , C04B2235/3891 , C04B2235/40 , C04B2235/404 , C04B2235/405 , C04B2235/408 , C04B2235/428 , C04B2235/5436 , C04B2235/5472 , C04B2235/616 , C04B2235/721 , C04B2235/77 , C04B2235/80 , C04B2235/96
摘要： An adherently bonded polycrystalline diamond body is produced by forming a charge composed of a mass of diamond crystals in contact with a mass of eutectiferous silicon-rich alloy wherein the alloy is in contact or in association with hexagonal boron nitride, confining such charge within a reaction chamber, subjecting the confined charge to a pressure of at least 25 kilobars, heating the pressure-maintained charge to a temperature sufficient to melt the alloy and at which no significant graphitization of the diamond occurs whereby the alloy infiltrates through the interstices between the diamond crystals producing said body.
摘要翻译： 通过形成由大量的共晶富硅合金接触的金刚石晶体组成的电荷，其中合金与六方氮化硼接触或与六方氮化硼结合，从而将这种电荷限制在反应中 将受限制的电荷经受至少25千伏的压力，将保压的电荷加热到足以熔化合金的温度，并且在该温度下不会发生金刚石的显着石墨化，由此合金渗入金刚石晶体之间的间隙 生产身体。
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4.发明授权Silicon carbide and silicon bonded polycrystalline diamond body and method of making it 失效碳化硅和硅胶多晶金刚石体及其制作方法
公开(公告)号：US4151686A
公开(公告)日：1979-05-01
申请号：US867938
申请日：1978-01-09
CPC分类号： C04B35/645 , B01J3/062 , B22F3/26 , B24D3/08 , C04B35/52 , C04B35/6316 , C22C26/00 , B01J2203/062 , B01J2203/0635 , B01J2203/0655 , B01J2203/0685 , C04B2235/3826 , C04B2235/427 , C04B2235/428 , C04B2235/5436 , C04B2235/616 , C04B2235/721 , C04B2235/728 , C04B2235/80 , C04B2235/96
摘要： A mass of diamond crystals contacting a mass of elemental silicon are confined within a pressure-transmitting medium. The resulting charge assembly is subjected to a pressure of at least 25 kilobars causing application of isostatic pressure to the contacting masses which dimensionally stabilizes them and increases the density of the mass of diamond crystals. The resulting pressure-maintained charge assembly is heated to a temperature sufficient to melt the silicon and at which no significant graphitization of the diamond occurs whereby the silicon is infiltrated through the interstices between the diamond crystals producing, upon cooling, an adherently bonded integral body.
摘要翻译： 接触大量元素硅的大量金刚石晶体被限制在压力传递介质中。 所得到的电荷组件经受至少25千瓦的压力，从而对接触质量施加等静压，从而使它们尺寸稳定并增加金刚石晶体的质量密度。 将所得的保压电荷组件加热到足以熔化硅的温度，并且在该温度下不会发生金刚石的显着石墨化，由此硅渗透穿过金刚石晶体之间的间隙，在冷却时产生粘附的整体。
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公开(公告)号：US4241135A
公开(公告)日：1980-12-23
申请号：US10748
申请日：1979-02-09
CPC分类号： C04B35/645 , B01J3/062 , B22F7/06 , B24D18/0009 , B32B18/00 , C04B35/52 , C04B35/565 , C04B35/575 , C04B35/6316 , C04B35/6455 , C04B37/001 , B01J2203/062 , B01J2203/0635 , B01J2203/0655 , B01J2203/0685 , C04B2235/3821 , C04B2235/3826 , C04B2235/383 , C04B2235/3834 , C04B2235/3839 , C04B2235/3843 , C04B2235/3847 , C04B2235/3891 , C04B2235/40 , C04B2235/404 , C04B2235/405 , C04B2235/408 , C04B2235/421 , C04B2235/422 , C04B2235/428 , C04B2235/5436 , C04B2235/5472 , C04B2235/616 , C04B2235/658 , C04B2235/6581 , C04B2235/6582 , C04B2235/721 , C04B2235/728 , C04B2235/77 , C04B2235/80 , C04B2235/96 , C04B2235/9607 , C04B2237/361 , C04B2237/363 , C04B2237/365 , C04B2237/525 , C04B2237/61 , C04B2237/704 , Y10S428/911 , Y10T428/24992 , Y10T428/26 , Y10T428/2993 , Y10T428/2995 , Y10T428/30
摘要： A mass of diamond crystals in contact with a mass of eutectiferous silicon-rich alloy and a silicon carbide ceramic substrate are disposed in a container and placed within a pressure transmitting powder medium. Pressure is applied to the powder medium resulting in substantially isostatic pressure being applied to the container and its contents sufficient to dimensionally stabilize the container and its contents. The resulting shaped substantially isostatic system of powder-enveloped container is hot-pressed whereby fluid eutectiferous silicon-rich alloy is produced and infiltrated through the interstices between the diamond crystals and contacts the contacting face of the silicon carbide substrate sufficiently producing, upon cooling, an adherently bonded integral composite.
摘要翻译： 与大量共晶富硅合金和碳化硅陶瓷基板接触的大量金刚石晶体设置在容器中并放置在压力传递粉末介质中。 压力被施加到粉末介质上，导致基本上均衡的压力被施加到容器及其内容物足以使容器及其内容物尺寸稳定。 将所得到的粉末包裹容器的基本均匀的体系进行热压，由此产生流体共晶富含硅的合金并渗入金刚石晶体之间的间隙并与碳化硅衬底的接触面接触，在冷却时， 贴合的整体复合材料。
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公开(公告)号：US4234661A
公开(公告)日：1980-11-18
申请号：US19366
申请日：1979-03-12
CPC分类号： C04B41/009 , B24D3/08 , B32B18/00 , C04B35/6455 , C04B41/5002 , C04B41/85 , C04B2235/658 , C04B2235/6581 , C04B2235/6582 , C04B2237/363 , C04B2237/368 , C04B2237/60 , C04B2237/61 , C04B2237/704 , Y10T428/31504
摘要： A mass of diamond crystals in contact with a mass of eutectiferous silicon-rich alloy and a silicon nitride ceramic substrate are disposed in a container and placed within a pressure transmitting powder medium. Pressure is applied to the powder medium resulting in substantially isostatic pressure being applied to the container and its contents sufficient to dimensionally stabilize the container and its contents. The resulting shaped substantially isostatic system of powder-enveloped container is hot-pressed whereby fluid eutectiferous silicon-rich alloy is produced and infiltrated through the interstices between the diamond crystals and contacts the contacting face of the silicon nitride substrate sufficiently producing, upon cooling, an adherently bonded integral composite.
摘要翻译： 与大量共晶富硅合金和氮化硅陶瓷基板接触的大量金刚石晶体设置在容器中并放置在压力传递粉末介质中。 压力被施加到粉末介质上，导致基本上均衡的压力被施加到容器及其内容物足以使容器及其内容物尺寸稳定。 所得到的粉末包裹容器的基本均匀的体系被热压，从而产生流体共晶富含硅的合金，并渗入金刚石晶体之间的间隙并与氮化硅衬底的接触面接触，在冷却时， 贴合的整体复合材料。
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公开(公告)号：US4156614A
公开(公告)日：1979-05-29
申请号：US839990
申请日：1977-10-06
IPC分类号： C04B35/10 , B22C1/00 , B22C1/08 , C04B35/101 , C04B35/113 , C04B38/00 , B28B7/34
CPC分类号： C04B35/113 , B22C1/00 , C04B35/101
摘要： Cores made of alumina-based ceramics, such as .beta.-alumina materials, are substantially non-reactive with directionally solidified eutectic and superalloy materials, do not cause hot cracking of the same, and are easily leachable from the cast metal.
摘要翻译： 由{62-氧化铝材料等的氧化铝系陶瓷制成的1个核心基本上与定向凝固的共晶和超合金材料无反应性，不会引起热裂纹，容易从铸造金属中浸出 。
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公开(公告)号：US4124401A
公开(公告)日：1978-11-07
申请号：US844448
申请日：1977-10-21
CPC分类号： C04B35/645 , B01J3/062 , C04B35/52 , C04B35/6316 , B01J2203/062 , B01J2203/0655 , B01J2203/0685 , B22F2005/001 , C04B2235/3826 , C04B2235/3839 , C04B2235/3843 , C04B2235/3847 , C04B2235/3891 , C04B2235/40 , C04B2235/404 , C04B2235/405 , C04B2235/408 , C04B2235/427 , C04B2235/428 , C04B2235/5436 , C04B2235/5472 , C04B2235/616 , C04B2235/721 , C04B2235/728 , C04B2235/80 , C04B2235/96
摘要： A mass of diamond crystals in contact with a mass of eutectiferous silicon-rich alloy are disposed in a container and placed within a pressure transmitting powder medium. Pressure is applied to the powder medium resulting in substantially isostatic pressure being applied to the container and its contents sufficient to dimensionally stabilize the container and its contents. The resulting shaped substantially isostatic system of powder-enveloped container is hot-pressed whereby fluid eutectiferous silicon-rich alloy is produced and infiltrated through the interstices between the diamond crystals producing, upon cooling, an adherently bonded integral body.
摘要翻译： 与大量共晶富含硅的合金接触的大量金刚石晶体设置在容器中并放置在压力传递粉末介质中。 压力被施加到粉末介质上，导致基本上均衡的压力被施加到容器及其内容物足以使容器及其内容物尺寸稳定。 将所形成的基本上均匀的粉末包封容器的等静压系统热压，从而产生流体共晶富含硅的合金，并通过金刚石晶体之间的间隙渗透，在冷却时产生粘附的整体。
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9.发明授权Apparatus for synthetic diamond deposition including spring-tensioned filaments 失效用于合成金刚石沉积的装置，包括弹簧张紧的细丝
公开(公告)号：US4970986A
公开(公告)日：1990-11-20
申请号：US469986
申请日：1990-01-25
申请人： Thomas R. Anthony , Richard A. Engler , Robert H. Ettinger , James F. Fleischer , Robert C. DeVries
发明人： Thomas R. Anthony , Richard A. Engler , Robert H. Ettinger , James F. Fleischer , Robert C. DeVries
IPC分类号： C04B41/87 , C23C16/26 , C23C16/27 , C23C16/44 , C23C16/46 , C30B25/10 , C30B25/16 , C30B29/04
CPC分类号： C23C16/44 , C23C16/271
摘要： Diamond is deposited by chemical vapor deposition on two parallel substrates, by means of a plurality of filaments between said substrates. The substrates and filaments are in vertical configuration and the filaments are linear and spring-tensioned to compensate for thermal expansion and expansion caused by filament carburization. The apparatus includes at least one and preferably two temperature controlling means, usually heat sinks, to maintain substrate temperature in the range of 900.degree.-1000.degree. C., for optimum rate of diamond deposition.
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10.发明授权Apparatus for synthetic diamond deposition including curved filaments and substrate cooling means 失效用于合成金刚石沉积的装置，包括弯曲细丝和基底冷却装置
公开(公告)号：US4953499A
公开(公告)日：1990-09-04
申请号：US389212
申请日：1989-08-03
申请人： Thomas R. Anthony , Robert C. DeVries , Richard A. Engler , Robert H. Ettinger , James F. Fleischer
发明人： Thomas R. Anthony , Robert C. DeVries , Richard A. Engler , Robert H. Ettinger , James F. Fleischer
IPC分类号： C04B41/87 , C23C16/26 , C23C16/27 , C23C16/44 , C23C16/458 , C23C16/46 , C30B25/10 , C30B29/04
CPC分类号： C23C16/463 , C23C16/271 , C23C16/46 , Y10T117/10
摘要： Diamond is deposited by chemical vapor deposition on two parallel substrates, by means of a plurality of filaments between the substrates. The substrates and filaments are in vertical configuration and the filaments are prestressed to curve in a single plane parallel to the substrates, to allow for thermal expansion and expansion caused by filament carburization. The apparatus includes at least one and preferably two heat sinks to maintain substrate temperatures in the range of 900.degree.-1000.degree. C., for optimum rate of diamond deposition.
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