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    METHOD AND SYSTEM FOR TREATING A DIELECTRIC FILM
    1.
    发明申请
    METHOD AND SYSTEM FOR TREATING A DIELECTRIC FILM 审中-公开
    用于处理电介质膜的方法和系统

    公开(公告)号：US20080076262A1

    公开(公告)日：2008-03-27

    申请号：US11947432

    申请日：2007-11-29

    申请人： Robert KEVWITCH ,  Brandon Hansen ,  Dorel Toma ,  Jianhong Zhu

    发明人： Robert KEVWITCH ,  Brandon Hansen ,  Dorel Toma ,  Jianhong Zhu

    IPC分类号： H01L21/302

    CPC分类号： H01L21/76802 ,  H01L21/02063 ,  H01L21/02101 ,  H01L21/02126 ,  H01L21/02337 ,  H01L21/3105 ,  H01L21/31633 ,  H01L21/31695 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76831 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method and system for treating a dielectric film includes exposing at least one surface of the dielectric film to an alkyl silane, an alkoxysilane, an alkyl siloxane, an alkoxysiloxane, an aryl silane, an acyl silane, a cyclo siloxane, a polysilsesquioxane (PSS), an aryl siloxane, an acyl siloxane, or a halo siloxane, or any combination thereof. The dielectric film can include a low dielectric constant film with or without pores having an etch feature formed therein following dry etch processing. As a result of the etch processing or ashing, exposed surfaces in the feature formed in the dielectric film can become damaged, or activated, leading to retention of contaminants, absorption of moisture, increase in dielectric constant, etc. Damaged surfaces, such as these, are treated by performing at least one of healing these surfaces to, for example, restore the dielectric constant (i.e., decrease the dielectric constant) and cleaning these surfaces to remove contaminants, moisture, or residue. Moreover, preparation for barrier layer and metallization of features in the film may include treating by performing sealing of sidewall surfaces of the feature to close exposed pores and provide a surface for barrier film deposition.

    摘要翻译： 用于处理电介质膜的方法和系统包括将电介质膜的至少一个表面暴露于烷基硅烷，烷氧基硅烷，烷基硅氧烷，烷氧基硅氧烷，芳基硅烷，酰基硅烷，环状硅氧烷，聚倍半硅氧烷（PSS ），芳基硅氧烷，酰基硅氧烷或卤代硅氧烷，或其任何组合。 介电膜可以包括具有或不具有在干蚀刻处理之后形成的蚀刻特征的孔的低介电常数膜。 作为蚀刻处理或灰化的结果，形成在电介质膜中的特征中的暴露表面可能被损坏或激活，导致污染物的保留，水分的吸收，介电常数的增加等。损坏的表面，例如这些 通过执行愈合这些表面中的至少一个来处理，例如恢复介电常数（即，降低介电常数）并清洁这些表面以去除污染物，水分或残留物。 此外，膜的特征的阻挡层和金属化的制备可以包括通过执行特征的侧壁表面的密封来封闭暴露的孔并提供用于阻挡膜沉积的表面来进行处理。

    Method and system for treating a dielectric film
    2.
    发明申请
    Method and system for treating a dielectric film 失效
    电介质膜处理方法及系统

    公开(公告)号：US20050215072A1

    公开(公告)日：2005-09-29

    申请号：US11060352

    申请日：2005-02-18

    申请人： Robert Kevwitch ,  Brandon Hansen ,  Dorel Toma ,  Jianhong Zhu

    发明人： Robert Kevwitch ,  Brandon Hansen ,  Dorel Toma ,  Jianhong Zhu

    IPC分类号： H01L21/311 ,  H01L21/316 ,  H01L21/768 ,  H01L23/532 ,  H01L21/469

    CPC分类号： H01L21/76802 ,  H01L21/02063 ,  H01L21/02101 ,  H01L21/02126 ,  H01L21/02337 ,  H01L21/3105 ,  H01L21/31633 ,  H01L21/31695 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76831 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method and system for treating a dielectric film includes exposing at least one surface of the dielectric film to an alkyl silane, an alkoxysilane, an alkyl siloxane, an alkoxysiloxane, an aryl silane, an acyl silane, a cyclo siloxane, a polysilsesquioxane (PSS), an aryl siloxane, an acyl siloxane, or a halo siloxane, or any combination thereof. The dielectric film can include a low dielectric constant film with or without pores having an etch feature formed therein following dry etch processing. As a result of the etch processing or ashing, exposed surfaces in the feature formed in the dielectric film can become damaged, or activated, leading to retention of contaminants, absorption of moisture, increase in dielectric constant, etc. Damaged surfaces, such as these, are treated by performing at least one of healing these surfaces to, for example, restore the dielectric constant (i.e., decrease the dielectric constant) and cleaning these surfaces to remove contaminants, moisture, or residue. Moreover, preparation for barrier layer and metallization of features in the film may include treating by performing sealing of sidewall surfaces of the feature to close exposed pores and provide a surface for barrier film deposition.

    摘要翻译： 用于处理电介质膜的方法和系统包括将电介质膜的至少一个表面暴露于烷基硅烷，烷氧基硅烷，烷基硅氧烷，烷氧基硅氧烷，芳基硅烷，酰基硅烷，环状硅氧烷，聚倍半硅氧烷（PSS ），芳基硅氧烷，酰基硅氧烷或卤代硅氧烷，或其任何组合。 介电膜可以包括具有或不具有在干蚀刻处理之后形成的蚀刻特征的孔的低介电常数膜。 作为蚀刻处理或灰化的结果，形成在电介质膜中的特征中的暴露表面可能被损坏或激活，导致污染物的保留，水分的吸收，介电常数的增加等。损坏的表面，例如这些 通过执行愈合这些表面中的至少一个来处理，例如恢复介电常数（即，降低介电常数）并清洁这些表面以去除污染物，水分或残留物。 此外，膜的特征的阻挡层和金属化的制备可以包括通过执行特征的侧壁表面的密封来封闭暴露的孔并提供用于阻挡膜沉积的表面来进行处理。

    Method and system for treating a dielectric film
    3.
    发明授权
    Method and system for treating a dielectric film 失效
    电介质膜处理方法及系统

    公开(公告)号：US07345000B2

    公开(公告)日：2008-03-18

    申请号：US11060352

    申请日：2005-02-18

    申请人： Robert Kevwitch ,  Brandon Hansen ,  Dorel Ioan Toma ,  Jianhong Zhu

    发明人： Robert Kevwitch ,  Brandon Hansen ,  Dorel Ioan Toma ,  Jianhong Zhu

    IPC分类号： H01L21/31

    CPC分类号： H01L21/76802 ,  H01L21/02063 ,  H01L21/02101 ,  H01L21/02126 ,  H01L21/02337 ,  H01L21/3105 ,  H01L21/31633 ,  H01L21/31695 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76831 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method and system for treating a dielectric film includes exposing at least one surface of the dielectric film to an alkyl silane, an alkoxysilane, an alkyl siloxane, an alkoxysiloxane, an aryl silane, an acyl silane, a cyclo siloxane, a polysilsesquioxane (PSS), an aryl siloxane, an acyl siloxane, or a halo siloxane, or any combination thereof. The dielectric film can include a low dielectric constant film with or without pores having an etch feature formed therein following dry etch processing. As a result of the etch processing or ashing, exposed surfaces in the feature formed in the dielectric film can become damaged, or activated, leading to retention of contaminants, absorption of moisture, increase in dielectric constant, etc. Damaged surfaces, such as these, are treated by performing at least one of healing these surfaces to, for example, restore the dielectric constant (i.e., decrease the dielectric constant) and cleaning these surfaces to remove contaminants, moisture, or residue. Moreover, preparation for barrier layer and metallization of features in the film may include treating by performing sealing of sidewall surfaces of the feature to close exposed pores and provide a surface for barrier film deposition.

    摘要翻译： 用于处理电介质膜的方法和系统包括将电介质膜的至少一个表面暴露于烷基硅烷，烷氧基硅烷，烷基硅氧烷，烷氧基硅氧烷，芳基硅烷，酰基硅烷，环硅氧烷，聚倍半硅氧烷（PSS ），芳基硅氧烷，酰基硅氧烷或卤代硅氧烷，或其任何组合。 介电膜可以包括具有或不具有在干蚀刻处理之后形成的蚀刻特征的孔的低介电常数膜。 作为蚀刻处理或灰化的结果，形成在电介质膜中的特征中的暴露表面可能被损坏或激活，导致污染物的保留，水分的吸收，介电常数的增加等。损坏的表面，例如这些 通过执行愈合这些表面中的至少一个来处理，例如恢复介电常数（即，降低介电常数）并清洁这些表面以去除污染物，水分或残留物。 此外，膜的特征的阻挡层和金属化的制备可以包括通过执行特征的侧壁表面的密封来封闭暴露的孔并提供用于阻挡膜沉积的表面来进行处理。

    Method and system for treating a substrate with a high pressure fluid using fluorosilicic acid
    6.
    发明授权
    Method and system for treating a substrate with a high pressure fluid using fluorosilicic acid 失效
    使用氟硅酸处理含高压流体的基材的方法和系统

    公开(公告)号：US07291565B2

    公开(公告)日：2007-11-06

    申请号：US10906353

    申请日：2005-02-15

    申请人： Brandon Hansen ,  Marie Lowe

    发明人： Brandon Hansen ,  Marie Lowe

    IPC分类号： H01L21/302

    CPC分类号： B08B7/0021 ,  C11D7/08 ,  C11D11/0047

    摘要： A method and system is described for treating a substrate with a high pressure fluid, such as carbon dioxide in a supercritical state. A process chemistry is introduced to the high pressure fluid for treating the substrate surface. The process chemistry comprises fluorosilicic acid.

    摘要翻译： 描述了用于处理具有超临界状态的二氧化碳的高压流体的衬底的方法和系统。 将工艺化学物质引入用于处理基材表面的高压流体中。 工艺化学包括氟硅酸。