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    Method and system for treating a dielectric film
    1.
    发明授权
    Method and system for treating a dielectric film 失效
    电介质膜处理方法及系统

    公开(公告)号：US07345000B2

    公开(公告)日：2008-03-18

    申请号：US11060352

    申请日：2005-02-18

    申请人： Robert Kevwitch ,  Brandon Hansen ,  Dorel Ioan Toma ,  Jianhong Zhu

    发明人： Robert Kevwitch ,  Brandon Hansen ,  Dorel Ioan Toma ,  Jianhong Zhu

    IPC分类号： H01L21/31

    CPC分类号： H01L21/76802 ,  H01L21/02063 ,  H01L21/02101 ,  H01L21/02126 ,  H01L21/02337 ,  H01L21/3105 ,  H01L21/31633 ,  H01L21/31695 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76831 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method and system for treating a dielectric film includes exposing at least one surface of the dielectric film to an alkyl silane, an alkoxysilane, an alkyl siloxane, an alkoxysiloxane, an aryl silane, an acyl silane, a cyclo siloxane, a polysilsesquioxane (PSS), an aryl siloxane, an acyl siloxane, or a halo siloxane, or any combination thereof. The dielectric film can include a low dielectric constant film with or without pores having an etch feature formed therein following dry etch processing. As a result of the etch processing or ashing, exposed surfaces in the feature formed in the dielectric film can become damaged, or activated, leading to retention of contaminants, absorption of moisture, increase in dielectric constant, etc. Damaged surfaces, such as these, are treated by performing at least one of healing these surfaces to, for example, restore the dielectric constant (i.e., decrease the dielectric constant) and cleaning these surfaces to remove contaminants, moisture, or residue. Moreover, preparation for barrier layer and metallization of features in the film may include treating by performing sealing of sidewall surfaces of the feature to close exposed pores and provide a surface for barrier film deposition.

    摘要翻译： 用于处理电介质膜的方法和系统包括将电介质膜的至少一个表面暴露于烷基硅烷，烷氧基硅烷，烷基硅氧烷，烷氧基硅氧烷，芳基硅烷，酰基硅烷，环硅氧烷，聚倍半硅氧烷（PSS ），芳基硅氧烷，酰基硅氧烷或卤代硅氧烷，或其任何组合。 介电膜可以包括具有或不具有在干蚀刻处理之后形成的蚀刻特征的孔的低介电常数膜。 作为蚀刻处理或灰化的结果，形成在电介质膜中的特征中的暴露表面可能被损坏或激活，导致污染物的保留，水分的吸收，介电常数的增加等。损坏的表面，例如这些 通过执行愈合这些表面中的至少一个来处理，例如恢复介电常数（即，降低介电常数）并清洁这些表面以去除污染物，水分或残留物。 此外，膜的特征的阻挡层和金属化的制备可以包括通过执行特征的侧壁表面的密封来封闭暴露的孔并提供用于阻挡膜沉积的表面来进行处理。

    Method and system for treating a dielectric film
    2.
    发明申请
    Method and system for treating a dielectric film 失效
    电介质膜处理方法及系统

    公开(公告)号：US20050215072A1

    公开(公告)日：2005-09-29

    申请号：US11060352

    申请日：2005-02-18

    申请人： Robert Kevwitch ,  Brandon Hansen ,  Dorel Toma ,  Jianhong Zhu

    发明人： Robert Kevwitch ,  Brandon Hansen ,  Dorel Toma ,  Jianhong Zhu

    IPC分类号： H01L21/311 ,  H01L21/316 ,  H01L21/768 ,  H01L23/532 ,  H01L21/469

    CPC分类号： H01L21/76802 ,  H01L21/02063 ,  H01L21/02101 ,  H01L21/02126 ,  H01L21/02337 ,  H01L21/3105 ,  H01L21/31633 ,  H01L21/31695 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76831 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method and system for treating a dielectric film includes exposing at least one surface of the dielectric film to an alkyl silane, an alkoxysilane, an alkyl siloxane, an alkoxysiloxane, an aryl silane, an acyl silane, a cyclo siloxane, a polysilsesquioxane (PSS), an aryl siloxane, an acyl siloxane, or a halo siloxane, or any combination thereof. The dielectric film can include a low dielectric constant film with or without pores having an etch feature formed therein following dry etch processing. As a result of the etch processing or ashing, exposed surfaces in the feature formed in the dielectric film can become damaged, or activated, leading to retention of contaminants, absorption of moisture, increase in dielectric constant, etc. Damaged surfaces, such as these, are treated by performing at least one of healing these surfaces to, for example, restore the dielectric constant (i.e., decrease the dielectric constant) and cleaning these surfaces to remove contaminants, moisture, or residue. Moreover, preparation for barrier layer and metallization of features in the film may include treating by performing sealing of sidewall surfaces of the feature to close exposed pores and provide a surface for barrier film deposition.

    摘要翻译： 用于处理电介质膜的方法和系统包括将电介质膜的至少一个表面暴露于烷基硅烷，烷氧基硅烷，烷基硅氧烷，烷氧基硅氧烷，芳基硅烷，酰基硅烷，环状硅氧烷，聚倍半硅氧烷（PSS ），芳基硅氧烷，酰基硅氧烷或卤代硅氧烷，或其任何组合。 介电膜可以包括具有或不具有在干蚀刻处理之后形成的蚀刻特征的孔的低介电常数膜。 作为蚀刻处理或灰化的结果，形成在电介质膜中的特征中的暴露表面可能被损坏或激活，导致污染物的保留，水分的吸收，介电常数的增加等。损坏的表面，例如这些 通过执行愈合这些表面中的至少一个来处理，例如恢复介电常数（即，降低介电常数）并清洁这些表面以去除污染物，水分或残留物。 此外，膜的特征的阻挡层和金属化的制备可以包括通过执行特征的侧壁表面的密封来封闭暴露的孔并提供用于阻挡膜沉积的表面来进行处理。

    METHOD AND SYSTEM FOR TREATING A SUBSTRATE WITH A HIGH PRESSURE FLUID USING A PEROXIDE-BASED PROCESS CHEMISTRY IN CONJUNCTION WITH AN INITIATOR
    5.
    发明申请
    METHOD AND SYSTEM FOR TREATING A SUBSTRATE WITH A HIGH PRESSURE FLUID USING A PEROXIDE-BASED PROCESS CHEMISTRY IN CONJUNCTION WITH AN INITIATOR 审中-公开
    使用基于过氧化物的工艺化学与发动机连接来处理具有高压流体的基板的方法和系统

    公开(公告)号：US20060180174A1

    公开(公告)日：2006-08-17

    申请号：US10906350

    申请日：2005-02-15

    申请人： Robert Kevwitch

    发明人： Robert Kevwitch

    IPC分类号： C23C16/00 ,  B08B6/00 ,  B08B3/00

    CPC分类号： H01L21/02101 ,  G03F7/427 ,  H01L21/67028

    摘要： A method and system is described for treating a substrate with a high pressure fluid, such as carbon dioxide in a supercritical state. A process chemistry containing a process peroxide is introduced to the high pressure fluid for treating the substrate surface. The peroxide-based chemistry is used in conjunction with an initiator, wherein the initiator facilitates the formation of a radical of the process peroxide.

    摘要翻译： 描述了用于处理具有超临界状态的二氧化碳的高压流体的衬底的方法和系统。 将含有过氧化物的工艺化学品引入用于处理基材表面的高压流体中。 基于过氧化物的化学物质与引发剂结合使用，其中引发剂促进过氧化物过程的基团的形成。

    TREATMENT OF SUBSTRATE USING FUNCTIONALIZING AGENT IN SUPERCRITICAL CARBON DIOXIDE
    7.
    发明申请
    TREATMENT OF SUBSTRATE USING FUNCTIONALIZING AGENT IN SUPERCRITICAL CARBON DIOXIDE 失效
    在超临界二氧化碳中使用功能化剂处理底物

    公开(公告)号：US20060254615A1

    公开(公告)日：2006-11-16

    申请号：US10908474

    申请日：2005-05-13

    申请人： Robert Kevwitch

    发明人： Robert Kevwitch

    IPC分类号： C23G1/00 ,  B08B7/04 ,  B08B3/00

    CPC分类号： H01L21/0206 ,  G03F7/427 ,  H01L21/02071

    摘要： During the processing of substrates, the substrate surface may be subjected to a cleaning process using supercritical CO2. Surface matter may remain, for example, because it is only minimally soluble in the supercritical CO2. For example, an oxidation cleaning process causes the substrate structure to cleave at several points leaving smaller fragments of oxidized residue behind. This residue has only minimal solubility in supercritical CO2 due to the polar constituents resulting from oxidation. The method thus further includes processing the substrate with supercritical CO2 and a functionalizing agent that can react with the smaller fragments and/or other less soluble components. These functionalized components are rendered more soluble in supercritical CO2 and are more easily removed than their predecessors.

    摘要翻译： 在处理基板期间，可以使用超临界CO 2进行基板表面的清洁处理。 例如，表面物质可以保留，因为它仅在极限可溶于超临界CO 2 2中。 例如，氧化清洁过程使得底物结构在几个点处裂开，留下较小碎片的氧化残余物。 由于由氧化产生的极性成分，该残余物在超临界CO 2 2中仅具有最小的溶解度。 因此，该方法还包括用超临界CO 2处理该基质和可与较小碎片和/或其它较不溶的组分反应的官能化试剂。 这些官能化组分在超临界CO 2中更易溶解，并且比其前辈更容易除去。

    Removal of porogens and porogen residues using supercritical CO2
    8.
    发明申请
    Removal of porogens and porogen residues using supercritical CO2 审中-公开
    使用超临界CO2去除致孔剂和致孔剂残留物

    公开(公告)号：US20060223899A1

    公开(公告)日：2006-10-05

    申请号：US11094882

    申请日：2005-03-30

    申请人： Joseph Hillman ,  Robert Kevwitch

    发明人： Joseph Hillman ,  Robert Kevwitch

    IPC分类号： C08J9/26

    CPC分类号： H01L21/31695 ,  H01L21/02107 ,  H01L21/02203 ,  H01L21/02343

    摘要： A method of and apparatus for treating a substrate to remove porogens and/or porogen residues form a dielectric layer using a processing chamber operating at a supercritical state is disclosed. In addition, other supercritical processes can be performed before and/or after the removal process.

    摘要翻译： 公开了一种使用处于超临界状态的处理室来处理基底以去除致孔剂和/或致孔剂残留物形成电介质层的方法和设备。 此外，可以在除去过程之前和/或之后执行其它超临界过程。

    Treatment of substrate using functionalizing agent in supercritical carbon dioxide
    9.
    发明授权
    Treatment of substrate using functionalizing agent in supercritical carbon dioxide 失效
    在超临界二氧化碳中使用官能化剂处理底物

    公开(公告)号：US07789971B2

    公开(公告)日：2010-09-07

    申请号：US10908474

    申请日：2005-05-13

    申请人： Robert Kevwitch

    发明人： Robert Kevwitch

    IPC分类号： B08B7/00 ,  C23G1/00 ,  B08B3/00

    CPC分类号： H01L21/0206 ,  G03F7/427 ,  H01L21/02071

    摘要： During the processing of substrates, the substrate surface may be subjected to a cleaning process using supercritical CO2. Surface matter may remain, for example, because it is only minimally soluble in the supercritical CO2. For example, an oxidation cleaning process causes the substrate structure to cleave at several points leaving smaller fragments of oxidized residue behind. This residue has only minimal solubility in supercritical CO2 due to the polar constituents resulting from oxidation. The method thus further includes processing the substrate with supercritical CO2 and a functionalizing agent that can react with the smaller fragments and/or other less soluble components. These functionalized components are rendered more soluble in supercritical CO2 and are more easily removed than their predecessors.

    摘要翻译： 在处理基板期间，可以使用超临界CO 2对基板表面进行清洁处理。 例如，表面物质可能会保留，因为它只能在超临界CO2中最低限度地溶解。 例如，氧化清洁过程使得底物结构在几个点处裂开，留下较小碎片的氧化残余物。 由于氧化产生的极性成分，该残留物在超临界CO2中的溶解度最小。 因此，该方法还包括用超临界CO 2和可与较小碎片和/或其它较不易溶组分反应的官能化剂来处理底物。 这些官能化组分在超临界CO 2中变得更易溶，并且比其前辈更容易除去。