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    Method and system for treating a dielectric film
    1.
    发明授权
    Method and system for treating a dielectric film 失效
    电介质膜处理方法及系统

    公开(公告)号：US07345000B2

    公开(公告)日：2008-03-18

    申请号：US11060352

    申请日：2005-02-18

    申请人： Robert Kevwitch ,  Brandon Hansen ,  Dorel Ioan Toma ,  Jianhong Zhu

    发明人： Robert Kevwitch ,  Brandon Hansen ,  Dorel Ioan Toma ,  Jianhong Zhu

    IPC分类号： H01L21/31

    CPC分类号： H01L21/76802 ,  H01L21/02063 ,  H01L21/02101 ,  H01L21/02126 ,  H01L21/02337 ,  H01L21/3105 ,  H01L21/31633 ,  H01L21/31695 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76831 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method and system for treating a dielectric film includes exposing at least one surface of the dielectric film to an alkyl silane, an alkoxysilane, an alkyl siloxane, an alkoxysiloxane, an aryl silane, an acyl silane, a cyclo siloxane, a polysilsesquioxane (PSS), an aryl siloxane, an acyl siloxane, or a halo siloxane, or any combination thereof. The dielectric film can include a low dielectric constant film with or without pores having an etch feature formed therein following dry etch processing. As a result of the etch processing or ashing, exposed surfaces in the feature formed in the dielectric film can become damaged, or activated, leading to retention of contaminants, absorption of moisture, increase in dielectric constant, etc. Damaged surfaces, such as these, are treated by performing at least one of healing these surfaces to, for example, restore the dielectric constant (i.e., decrease the dielectric constant) and cleaning these surfaces to remove contaminants, moisture, or residue. Moreover, preparation for barrier layer and metallization of features in the film may include treating by performing sealing of sidewall surfaces of the feature to close exposed pores and provide a surface for barrier film deposition.

    摘要翻译： 用于处理电介质膜的方法和系统包括将电介质膜的至少一个表面暴露于烷基硅烷，烷氧基硅烷，烷基硅氧烷，烷氧基硅氧烷，芳基硅烷，酰基硅烷，环硅氧烷，聚倍半硅氧烷（PSS ），芳基硅氧烷，酰基硅氧烷或卤代硅氧烷，或其任何组合。 介电膜可以包括具有或不具有在干蚀刻处理之后形成的蚀刻特征的孔的低介电常数膜。 作为蚀刻处理或灰化的结果，形成在电介质膜中的特征中的暴露表面可能被损坏或激活，导致污染物的保留，水分的吸收，介电常数的增加等。损坏的表面，例如这些 通过执行愈合这些表面中的至少一个来处理，例如恢复介电常数（即，降低介电常数）并清洁这些表面以去除污染物，水分或残留物。 此外，膜的特征的阻挡层和金属化的制备可以包括通过执行特征的侧壁表面的密封来封闭暴露的孔并提供用于阻挡膜沉积的表面来进行处理。

    METHOD AND SYSTEM FOR TREATING A DIELECTRIC FILM
    2.
    发明申请
    METHOD AND SYSTEM FOR TREATING A DIELECTRIC FILM 审中-公开
    用于处理电介质膜的方法和系统

    公开(公告)号：US20080076262A1

    公开(公告)日：2008-03-27

    申请号：US11947432

    申请日：2007-11-29

    申请人： Robert KEVWITCH ,  Brandon Hansen ,  Dorel Toma ,  Jianhong Zhu

    发明人： Robert KEVWITCH ,  Brandon Hansen ,  Dorel Toma ,  Jianhong Zhu

    IPC分类号： H01L21/302

    CPC分类号： H01L21/76802 ,  H01L21/02063 ,  H01L21/02101 ,  H01L21/02126 ,  H01L21/02337 ,  H01L21/3105 ,  H01L21/31633 ,  H01L21/31695 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76831 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method and system for treating a dielectric film includes exposing at least one surface of the dielectric film to an alkyl silane, an alkoxysilane, an alkyl siloxane, an alkoxysiloxane, an aryl silane, an acyl silane, a cyclo siloxane, a polysilsesquioxane (PSS), an aryl siloxane, an acyl siloxane, or a halo siloxane, or any combination thereof. The dielectric film can include a low dielectric constant film with or without pores having an etch feature formed therein following dry etch processing. As a result of the etch processing or ashing, exposed surfaces in the feature formed in the dielectric film can become damaged, or activated, leading to retention of contaminants, absorption of moisture, increase in dielectric constant, etc. Damaged surfaces, such as these, are treated by performing at least one of healing these surfaces to, for example, restore the dielectric constant (i.e., decrease the dielectric constant) and cleaning these surfaces to remove contaminants, moisture, or residue. Moreover, preparation for barrier layer and metallization of features in the film may include treating by performing sealing of sidewall surfaces of the feature to close exposed pores and provide a surface for barrier film deposition.

    摘要翻译： 用于处理电介质膜的方法和系统包括将电介质膜的至少一个表面暴露于烷基硅烷，烷氧基硅烷，烷基硅氧烷，烷氧基硅氧烷，芳基硅烷，酰基硅烷，环状硅氧烷，聚倍半硅氧烷（PSS ），芳基硅氧烷，酰基硅氧烷或卤代硅氧烷，或其任何组合。 介电膜可以包括具有或不具有在干蚀刻处理之后形成的蚀刻特征的孔的低介电常数膜。 作为蚀刻处理或灰化的结果，形成在电介质膜中的特征中的暴露表面可能被损坏或激活，导致污染物的保留，水分的吸收，介电常数的增加等。损坏的表面，例如这些 通过执行愈合这些表面中的至少一个来处理，例如恢复介电常数（即，降低介电常数）并清洁这些表面以去除污染物，水分或残留物。 此外，膜的特征的阻挡层和金属化的制备可以包括通过执行特征的侧壁表面的密封来封闭暴露的孔并提供用于阻挡膜沉积的表面来进行处理。

    Method and system for treating a dielectric film
    3.
    发明申请
    Method and system for treating a dielectric film 失效
    电介质膜处理方法及系统

    公开(公告)号：US20050215072A1

    公开(公告)日：2005-09-29

    申请号：US11060352

    申请日：2005-02-18

    申请人： Robert Kevwitch ,  Brandon Hansen ,  Dorel Toma ,  Jianhong Zhu

    发明人： Robert Kevwitch ,  Brandon Hansen ,  Dorel Toma ,  Jianhong Zhu

    IPC分类号： H01L21/311 ,  H01L21/316 ,  H01L21/768 ,  H01L23/532 ,  H01L21/469

    CPC分类号： H01L21/76802 ,  H01L21/02063 ,  H01L21/02101 ,  H01L21/02126 ,  H01L21/02337 ,  H01L21/3105 ,  H01L21/31633 ,  H01L21/31695 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76831 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method and system for treating a dielectric film includes exposing at least one surface of the dielectric film to an alkyl silane, an alkoxysilane, an alkyl siloxane, an alkoxysiloxane, an aryl silane, an acyl silane, a cyclo siloxane, a polysilsesquioxane (PSS), an aryl siloxane, an acyl siloxane, or a halo siloxane, or any combination thereof. The dielectric film can include a low dielectric constant film with or without pores having an etch feature formed therein following dry etch processing. As a result of the etch processing or ashing, exposed surfaces in the feature formed in the dielectric film can become damaged, or activated, leading to retention of contaminants, absorption of moisture, increase in dielectric constant, etc. Damaged surfaces, such as these, are treated by performing at least one of healing these surfaces to, for example, restore the dielectric constant (i.e., decrease the dielectric constant) and cleaning these surfaces to remove contaminants, moisture, or residue. Moreover, preparation for barrier layer and metallization of features in the film may include treating by performing sealing of sidewall surfaces of the feature to close exposed pores and provide a surface for barrier film deposition.

    摘要翻译： 用于处理电介质膜的方法和系统包括将电介质膜的至少一个表面暴露于烷基硅烷，烷氧基硅烷，烷基硅氧烷，烷氧基硅氧烷，芳基硅烷，酰基硅烷，环状硅氧烷，聚倍半硅氧烷（PSS ），芳基硅氧烷，酰基硅氧烷或卤代硅氧烷，或其任何组合。 介电膜可以包括具有或不具有在干蚀刻处理之后形成的蚀刻特征的孔的低介电常数膜。 作为蚀刻处理或灰化的结果，形成在电介质膜中的特征中的暴露表面可能被损坏或激活，导致污染物的保留，水分的吸收，介电常数的增加等。损坏的表面，例如这些 通过执行愈合这些表面中的至少一个来处理，例如恢复介电常数（即，降低介电常数）并清洁这些表面以去除污染物，水分或残留物。 此外，膜的特征的阻挡层和金属化的制备可以包括通过执行特征的侧壁表面的密封来封闭暴露的孔并提供用于阻挡膜沉积的表面来进行处理。

    Method for treating a dielectric film
    4.
    发明授权
    Method for treating a dielectric film 失效
    电介质膜的处理方法

    公开(公告)号：US07553769B2

    公开(公告)日：2009-06-30

    申请号：US10682196

    申请日：2003-10-10

    申请人： Dorel Ioan Toma ,  Jianhong Zhu ,  Kazuhiro Hamamoto

    发明人： Dorel Ioan Toma ,  Jianhong Zhu ,  Kazuhiro Hamamoto

    IPC分类号： H01L21/302

    CPC分类号： H01L21/02337 ,  H01L21/02063 ,  H01L21/02126 ,  H01L21/02134 ,  H01L21/02137 ,  H01L21/02203 ,  H01L21/02343 ,  H01L21/02359 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/31138 ,  H01L21/76826 ,  H01L21/76831 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method and system for treating a dielectric film includes exposing at least one surface of the dielectric film to a CxHy containing material, wherein x and y are each integers greater than or equal to a value of unity. The dielectric film can include a low dielectric constant film with or without pores having an etch feature formed therein following dry etch processing. As a result of the etch processing or ashing, exposed surfaces in the feature formed in the dielectric film can become damaged, or activated, leading to retention of contaminants, absorption of moisture, increase in dielectric constant, etc. Damaged surfaces, such as these, are treated by performing at least one of healing these surfaces to, for example, restore the dielectric constant (i.e., decrease the dielectric constant) and cleaning these surfaces to remove contaminants, moisture, or residue. Moreover, preparation for barrier layer and metallization of features in the film may include treating by performing sealing of sidewall surfaces of the feature to close exposed pores and provide a surface for barrier film deposition.

    摘要翻译： 用于处理电介质膜的方法和系统包括将电介质膜的至少一个表面暴露于含CxHy的材料，其中x和y各自为大于或等于一个值的整数。 介电膜可以包括具有或不具有在干蚀刻处理之后形成的蚀刻特征的孔的低介电常数膜。 作为蚀刻处理或灰化的结果，形成在电介质膜中的特征中的暴露表面可能被损坏或激活，导致污染物的保留，水分的吸收，介电常数的增加等。损坏的表面，例如这些 通过执行愈合这些表面中的至少一个来处理，例如恢复介电常数（即，降低介电常数）并清洁这些表面以去除污染物，水分或残留物。 此外，膜的特征的阻挡层和金属化的制备可以包括通过执行特征的侧壁表面的密封来封闭暴露的孔并提供用于阻挡膜沉积的表面来进行处理。

    METAL CAPACITOR DESIGN FOR IMPROVED RELIABILITY AND GOOD ELECTRICAL CONNECTION
    7.
    发明申请
    METAL CAPACITOR DESIGN FOR IMPROVED RELIABILITY AND GOOD ELECTRICAL CONNECTION 有权
    金属电容器设计，改善可靠性和良好的电气连接

    公开(公告)号：US20110108949A1

    公开(公告)日：2011-05-12

    申请号：US12615796

    申请日：2009-11-10

    申请人： Jianhong Zhu ,  James F. Buller

    发明人： Jianhong Zhu ,  James F. Buller

    IPC分类号： H01L27/08 ,  H01L21/4763

    CPC分类号： H01L28/40 ,  H01L23/5223 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A metal capacitor is formed with good conductivity for both nodes of the capacitor and improved reliability. An embodiment includes a first layer of alternating first and second metal lines, a second layer of alternating third and fourth metal lines, a dielectric layer between the first and second layers, and vias in the dielectric layer connecting the first and second metal lines with the third and fourth metal lines, respectively, wherein each metal line comprises alternating first segments having a first width and second segments having a second width, the first width being greater than the second width, each first segment lying adjacent to a second segment of an adjacent metal line, and only first segments of the metal lines overlapping the vias. The design enables the spacing between metal lines to be maintained, the spacing between via to metal to be increased, and via connection to be maintained for both nets, thereby improving the conductivity and reliability of the capacitor and maintaining capacitance density.

    摘要翻译： 形成对电容器的两个节点具有良好导电性的金属电容器，并提高可靠性。 一个实施例包括交替的第一和第二金属线的第一层，交替的第三和第四金属线的第二层，第一和第二层之间的介电层，以及介电层中的通孔，将第一和第二金属线与 第三和第四金属线，其中每个金属线包括具有第一宽度的交替的第一段和具有第二宽度的第二段，第一宽度大于第二宽度，每个第一段邻近相邻的第二段的第二段 金属线，并且仅金属线的第一段与通孔重叠。 该设计使得能够保持金属线之间的间距，通孔与金属之间的间隔增加，并且通过两个网络的连接来保持，从而提高电容器的导电性和可靠性并保持电容密度。

    MOS structures with contact projections for lower contact resistance and methods for fabricating the same
    10.
    发明授权
    MOS structures with contact projections for lower contact resistance and methods for fabricating the same 有权
    具有用于较低接触电阻的接触突起的MOS结构及其制造方法

    公开(公告)号：US07670932B2

    公开(公告)日：2010-03-02

    申请号：US11762133

    申请日：2007-06-13

    申请人： Jianhong Zhu ,  Fred Hause ,  David Wu

    发明人： Jianhong Zhu ,  Fred Hause ,  David Wu

    IPC分类号： C12N15/75

    CPC分类号： H01L21/28518 ,  H01L21/28247 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/66628 ,  H01L29/7833

    摘要： MOS structures with contact projections for lower contact resistance and methods for fabricating such MOS structures have been provided. In an embodiment, a method comprises providing a semiconductor substrate, fabricating a gate stack on the substrate, and forming a contact projection on the substrate. Ions of a conductivity-determining type are implanted within the substrate using the gate stack as an ion implantation mask to form impurity-doped regions within the substrate. A metal silicide layer is formed on the contact projection and a contact is formed to the metal silicide layer. The contact is in electrical communication with the impurity-doped regions via the contact projection.

    摘要翻译： 已经提供了具有用于较低接触电阻的接触突起的MOS结构以及用于制造这种MOS结构的方法。 在一个实施例中，一种方法包括提供半导体衬底，在衬底上制造栅极堆叠，以及在衬底上形成接触突起。 使用栅极堆叠作为离子注入掩模将电导率确定类型的离子注入到衬底内，以在衬底内形成杂质掺杂区域。 在接触突起上形成金属硅化物层，并且与金属硅化物层形成接触。 触点通过接触突起与杂质掺杂区电连通。