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1.发明授权Selective anisotropic reactive ion etching process for polysilicide composite structures 失效多晶硅复合结构的选择性各向异性反应离子蚀刻工艺
公开(公告)号：US4528066A
公开(公告)日：1985-07-09
申请号：US628558
申请日：1984-07-06
IPC分类号： H01L21/302 , H01L21/28 , H01L21/3065 , H01L21/312 , H01L21/3213 , H01L21/306 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： H01L21/32137 , H01L21/312
摘要： A reactive ion etching technique is disclosed for etching a gate electrode out of layers of tungsten silicide and polycrystalline silicon without etching the underlying layer of silicon dioxide which serves as the gate dielectric and which covers the source and drain regions. The key feature of the invention, wherein the gate, which has been partially etched out of the tungsten silicide and polycrystalline silicon layers, is coated with poly tetra-fluoroethylene (teflon) to protect the sidewalls of the gate from being excessively etched in the lateral direction while the etching continues at the bottom on either side of the gate.The process is especially suitable for formation of tungsten silicide structures since no subsequent thermal steps are required which would otherwise cause a delamination of the tungsten silicide. In addition to eliminating undercutting, the process does not disturb the gate oxide over the source and drain areas, which would otherwise create a leaky device unsuitable for applications such as dynamic RAMs. The entire process can be carried out in a single pump down and therefore contamination levels can be minimized.
摘要翻译： 公开了一种反应离子蚀刻技术，用于将栅极电极从硅化钨和多晶硅层之外蚀刻，而不会蚀刻用作栅极电介质并覆盖源极和漏极区域的二氧化硅的下层。 本发明的关键特征在于，已经部分地从硅化钨和多晶硅层中蚀刻出的栅极涂覆有聚四氟乙烯（聚四氟乙烯），以保护栅极的侧壁在侧面被过度蚀刻 而蚀刻在栅极的任一侧的底部继续蚀刻。 该方法特别适合于形成硅化钨结构，因为不需要随后的热步骤，否则会导致硅化钨的分层。 除了消除底切之外，该过程不会干扰源极和漏极区域上的栅极氧化物，否则将产生不适合于诸如动态RAM的应用的泄漏装置。 整个过程可以在单个泵中进行，因此污染水平可以最小化。
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公开(公告)号：US09690334B2
公开(公告)日：2017-06-27
申请号：US13592301
申请日：2012-08-22
CPC分类号： G06F1/1686 , G06F1/1694 , G06F3/012 , G06F3/0304 , G06F3/14 , G09G2340/045 , G09G2354/00 , G09G2370/22 , H04M1/72594 , H04M2250/12 , H04N13/366
摘要： Systems, storage medium, and methods associated with adaptive visual output on a mobile device are disclosed herein. In embodiments, a storage medium may have instructions to enable the mobile device to determine a change in a distance between the mobile device and a user of the mobile device. The instruction may also enable the mobile device to operate an end-user application that may adaptively present a visual output based at least in part on a result of the change in the distance. Other embodiments may be disclosed or claimed.
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公开(公告)号：US20170180652A1
公开(公告)日：2017-06-22
申请号：US14976489
申请日：2015-12-21
CPC分类号： H04N13/161 , G06K9/00771 , G06K9/2036 , H04N5/2226 , H04N13/178 , H04N13/271 , H04N13/293 , H04N2213/003
摘要： System and techniques for enhanced imaging are described herein. Light from an environment may be sampled to create an image. Energy reflected from the environment may also be sampled to create a depth image of the environment. A classifier may be applied to both the image and the depth image to provide a set of object properties for an object in the environment. A composite image may be constructed that includes portions of the image and depth image representing the object as well as the object properties.
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公开(公告)号：US09497148B2
公开(公告)日：2016-11-15
申请号：US14580804
申请日：2014-12-23
CPC分类号： H04L51/08 , H04L51/20 , H04L51/34 , H04L67/1095 , H04W4/02
摘要： Methods and systems to predictively determine to perform a computing activity based on contextual information. Context-based criteria are defined based relationships between user-computing activity and contextual information, and are evaluated based on updated contextual information to determine whether to perform the computing activity. Context-based criteria may be defined to predictively identify content to be transferred/synchronized/updated and/or deleted, and/or to select one or more of multiple devices to receive content. Content may be selectively synchronized across devices of a user and/or shared with another user(s). Context-based criteria may relate to, without limitation, location, activity, computer-usage patterns, motion, and/or schedule of a user, device location, user/device proximity, relationships amongst content, users, and/or devices. Context-based computing environment parameters may be provided to pre-loaded content on device (e.g., store, open, and/or configure an operating system, application, and/or resource), with little or no user interaction.
摘要翻译： 基于上下文信息来预测性地确定执行计算活动的方法和系统。 基于上下文的标准是基于用户计算活动和上下文信息之间的关系进行定义的，并且基于更新的上下文信息进行评估，以确定是否执行计算活动。 可以定义基于上下文的准则以预测地识别要传送/同步/更新和/或删除的内容，和/或选择多个设备中的一个或多个以接收内容。 可以在用户的设备和/或与另一个用户共享内容之间选择性地同步内容。 基于上下文的标准可以涉及但不限于用户的位置，活动，计算机使用模式，运动和/或时间表，设备位置，用户/设备接近度，内容，用户和/或设备之间的关系。 基于上下文的计算环境参数可以在很少或没有用户交互的情况下被提供给设备上的预加载内容（例如，存储，打开和/或配置操作系统，应用和/或资源）。
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公开(公告)号：US20160094500A1
公开(公告)日：2016-03-31
申请号：US14580804
申请日：2014-12-23
CPC分类号： H04L51/08 , H04L51/20 , H04L51/34 , H04L67/1095 , H04W4/02
摘要： Methods and systems to predictively determine to perform a computing activity based on contextual information. Context-based criteria are defined based relationships between user-computing activity and contextual information, and are evaluated based on updated contextual information to determine whether to perform the computing activity. Context-based criteria may be defined to predictively identify content to be transferred/synchronized/updated and/or deleted, and/or to select one or more of multiple devices to receive content. Content may be selectively synchronized across devices of a user and/or shared with another user(s). Context-based criteria may relate to, without limitation, location, activity, computer-usage patterns, motion, and/or schedule of a user, device location, user/device proximity, relationships amongst content, users, and/or devices. Context-based computing environment parameters may be provided to pre-loaded content on device (e.g., store, open, and/or configure an operating system, application, and/or resource), with little or no user interaction.
摘要翻译： 基于上下文信息来预测性地确定执行计算活动的方法和系统。 基于上下文的标准是基于用户计算活动和上下文信息之间的关系进行定义的，并且基于更新的上下文信息进行评估，以确定是否执行计算活动。 可以定义基于上下文的准则以预测地识别要传送/同步/更新和/或删除的内容，和/或选择多个设备中的一个或多个以接收内容。 可以在用户的设备和/或与另一个用户共享内容之间选择性地同步内容。 基于上下文的标准可以涉及但不限于用户的位置，活动，计算机使用模式，运动和/或时间表，设备位置，用户/设备接近度，内容，用户和/或设备之间的关系。 基于上下文的计算环境参数可以在很少或没有用户交互的情况下被提供给设备上的预加载内容（例如，存储，打开和/或配置操作系统，应用和/或资源）。
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公开(公告)号：US20140108320A1
公开(公告)日：2014-04-17
申请号：US13652517
申请日：2012-10-16
申请人： Jim S. Baca , David Stanasolovich , Joan M. Tafoya , Hong Li , Tomer Rider
发明人： Jim S. Baca , David Stanasolovich , Joan M. Tafoya , Hong Li , Tomer Rider
IPC分类号： G06N5/02
CPC分类号： G06N5/02
摘要： In accordance with some embodiments of the present invention, information about a user's activities and habits may be collected on an ongoing basis with the user's permission. This information about previous history can then tied to inferences that enable predictions about the user's preferences. As a result, when it comes time for the user to make a decision or a selection, information about past history and permissible inferences can be used to automatically provide suggestions for implementing future activities. In addition, in some cases this previous history information can be used to optimize future selections.
摘要翻译： 根据本发明的一些实施例，可以在用户许可的情况下持续收集关于用户的活动和习惯的信息。 然后，有关以前历史记录的信息可以与推论相关联，从而可以预测用户的偏好。 因此，当用户作出决定或选择时，可以使用有关过去历史和可允许推论的信息来自动提供实施未来活动的建议。 此外，在某些情况下，以前的历史信息可用于优化未来的选择。
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7.发明申请DEVICE AND METHOD FOR MODIFYING RENDERING BASED ON VIEWER FOCUS AREA FROM EYE TRACKING 审中-公开基于眼睛跟踪的视力聚焦区域修改渲染的设备和方法公开(公告)号：US20140092006A1
公开(公告)日：2014-04-03
申请号：US13631476
申请日：2012-09-28
IPC分类号： G06F3/01
CPC分类号： G06F3/013 , G09G5/363 , G09G2330/021
摘要： Devices and methods for modifying content rendered on the display of a computing device as a function of eye focus area include receiving sensor data from one or more eye tracking sensors, determining an eye focus area on the display screen as a function of the sensor data, and adjusting one or more visual characteristics of the rendered content as a function of the eye focus area. Perceived quality of the rendered content may be improved by improving the visual characteristics of the content displayed within the eye focus area. Rendering efficiency may be improved by degrading the visual characteristics of the content displayed outside of the eye focus area. Adjustable visual characteristics include the level of detail used to render the content, the color saturation or brightness of the content, and rendering effects such as anti-aliasing, shading, anisotropic filtering, focusing, blurring, lighting, and/or shadowing.
摘要翻译： 用于修改作为眼睛聚焦区域的函数的在计算设备的显示器上呈现的内容的设备和方法包括从一个或多个眼睛跟踪传感器接收传感器数据，根据传感器数据确定显示屏幕上的眼睛对焦区域， 以及调整作为眼睛对焦区域的函数的所渲染内容的一个或多个视觉特征。 可以通过改善在眼睛对焦区域内显示的内容的视觉特征来改善呈现内容的感知质量。 可以通过降低在眼睛对焦区域之外显示的内容的视觉特征来提高渲染效率。 可调整的视觉特征包括用于呈现内容的细节水平，内容的色彩饱和度或亮度，以及诸如抗锯齿，阴影，各向异性过滤，聚焦，模糊，照明和/或阴影之类的渲染效果。
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公开(公告)号：US5352927A
公开(公告)日：1994-10-04
申请号：US968634
申请日：1992-10-29
IPC分类号： H01L21/28 , H01L21/3105 , H01L21/336 , H01L21/60 , H01L21/768 , H01L23/48 , H01L23/522 , H01L29/78 , H01L29/52 , H01L29/54
CPC分类号： H01L23/5226 , H01L21/3105 , H01L21/76877 , H01L21/76879 , H01L21/76897 , H01L2924/0002
摘要： A contact stud for a semiconductor structure is fabricated by providing a semiconductor substrate having an alignment structure, which includes a sidewall, and the semiconductor structure formed thereon, forming a sidewall spacer contiguous with the semiconductor structure and the sidewall of the alignment structure, depositing an insulating layer contiguous with the sidewall spacer so as to insulate the semiconductor structure, etching the sidewall spacer selectively to the sidewall of the alignment structure, the semiconductor structure and the insulating layer for forming a contact window opening for allowing access to the semiconductor structure, and backfilling the contact window opening with a conductive material so as to contact the semiconductor structure for forming the stud.
摘要翻译： 通过提供具有对准结构的半导体衬底制造半导体结构的接触柱，该半导体衬底包括侧壁和形成在其上的半导体结构，形成与半导体结构和对准结构的侧壁邻接的侧壁间隔， 绝缘层，其与所述侧壁间隔物邻接，以使所述半导体结构绝缘，将所述侧壁间隔物选择性地蚀刻到所述对准结构的侧壁，所述半导体结构和所述绝缘层用于形成用于允许接近所述半导体结构的接触窗口，以及 用导电材料回填接触窗口以便接触用于形成螺柱的半导体结构。
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9.发明授权Process for fabricating self-aligned contact studs for semiconductor structures 失效制造用于半导体结构的自对准接触柱的方法
公开(公告)号：US5166096A
公开(公告)日：1992-11-24
申请号：US868826
申请日：1992-04-14
IPC分类号： H01L21/3105 , H01L21/60 , H01L21/768 , H01L23/48 , H01L23/522
CPC分类号： H01L23/5226 , H01L21/3105 , H01L21/76877 , H01L21/76879 , H01L21/76897 , H01L2924/0002 , Y10S257/90
摘要： A contact stud for semiconductor structure is fabricated by providing a semiconductor substrate having an alignment structure, which includes a sidewall, and the semiconductor structure formed thereon, forming a sidewall spacer contiguous with the semiconductor structure and the sidewall of the alignment structure, depositing an insulating layer contiguous with the sidewall spacer so as to insulate the semiconductor structure, etching the sidewall spacer selectively to the sidewall of the alignment structure, the semiconductor structure and the insulating layer forming a contact window opening for allowing access to the semiconductor structure, and backfilling the contact window opening with a conductive material so as to contact the semiconductor structure for forming the stud.
摘要翻译： 通过提供具有对准结构的半导体衬底制造半导体结构的接触柱，该半导体衬底包括侧壁和形成在其上的半导体结构，形成与半导体结构和对准结构的侧壁相邻的侧壁间隔物，沉积绝缘体 层与所述侧壁间隔物邻接以使所述半导体结构绝缘，将所述侧壁间隔物选择性地蚀刻到所述对准结构的侧壁，所述半导体结构和所述绝缘层形成用于允许接近所述半导体结构的接触窗口，并且填充 接触窗口与导电材料接触，以便与用于形成螺柱的半导体结构接触。
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公开(公告)号：US5024896A
公开(公告)日：1991-06-18
申请号：US350182
申请日：1989-07-06
IPC分类号： H01L21/3205 , H01L21/311 , H01L21/768
CPC分类号： H01L21/31116 , H01L21/7688 , Y10S428/901 , Y10T428/12396 , Y10T428/12528 , Y10T428/31721
摘要： A process and structure for depositing metal lines in a lift-off process is disclosed. The process comprises the deposition of a four-layer structure or lift-off stencil, comprising a first layer of a lift-off polymer etchable in oxygen plasma, a first barrier layer of hexamethyldisilizane (HMDS) resistant to an oxygen plasma, a second lift-off layer and a second barrier layer. Once these layers are deposited, a layer of photoresist is deposited and lithographically defined with the metal conductor pattern desired. The layers are then sequentially etched with oxygen and CF.sub.4, resulting in a dual overhang lift-off structure. Metal is then deposited by evaporation or sputtering through the lift-off structure. Following metal deposition, the stencil is lifted-off in a solvent such as N-methylpyrrolidone (NMP).
摘要翻译： 公开了一种用于在剥离过程中沉积金属线的工艺和结构。 该方法包括沉积四层结构或剥离模板，其包括在氧等离子体中可蚀刻的剥离聚合物的第一层，对氧等离子体有抗性的六甲基二硅烷（HMDS）的第一阻挡层，第二提升 和第二阻挡层。 一旦沉积这些层，就会沉积一层光致抗蚀剂，并用所需的金属导体图案光刻地限定。 然后用氧和CF 4顺序蚀刻各层，得到双悬臂剥离结构。 然后通过蒸发或溅射将金属沉积通过剥离结构。 金属沉积后，在溶剂如N-甲基吡咯烷酮（NMP）中将模板剥离。
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