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    Collimated metal deposition
    1.
    发明授权
    Collimated metal deposition 失效
    准直金属沉积

    公开(公告)号：US5024896A

    公开(公告)日：1991-06-18

    申请号：US350182

    申请日：1989-07-06

    申请人： Gangadhara S. Mathad ,  David Stanasolovich ,  Giorgio G. Via

    发明人： Gangadhara S. Mathad ,  David Stanasolovich ,  Giorgio G. Via

    IPC分类号： H01L21/3205 ,  H01L21/311 ,  H01L21/768

    CPC分类号： H01L21/31116 ,  H01L21/7688 ,  Y10S428/901 ,  Y10T428/12396 ,  Y10T428/12528 ,  Y10T428/31721

    摘要： A process and structure for depositing metal lines in a lift-off process is disclosed. The process comprises the deposition of a four-layer structure or lift-off stencil, comprising a first layer of a lift-off polymer etchable in oxygen plasma, a first barrier layer of hexamethyldisilizane (HMDS) resistant to an oxygen plasma, a second lift-off layer and a second barrier layer. Once these layers are deposited, a layer of photoresist is deposited and lithographically defined with the metal conductor pattern desired. The layers are then sequentially etched with oxygen and CF.sub.4, resulting in a dual overhang lift-off structure. Metal is then deposited by evaporation or sputtering through the lift-off structure. Following metal deposition, the stencil is lifted-off in a solvent such as N-methylpyrrolidone (NMP).

    摘要翻译： 公开了一种用于在剥离过程中沉积金属线的工艺和结构。 该方法包括沉积四层结构或剥离模板，其包括在氧等离子体中可蚀刻的剥离聚合物的第一层，对氧等离子体有抗性的六甲基二硅烷（HMDS）的第一阻挡层，第二提升 和第二阻挡层。 一旦沉积这些层，就会沉积一层光致抗蚀剂，并用所需的金属导体图案光刻地限定。 然后用氧和CF 4顺序蚀刻各层，得到双悬臂剥离结构。 然后通过蒸发或溅射将金属沉积通过剥离结构。 金属沉积后，在溶剂如N-甲基吡咯烷酮（NMP）中将模板剥离。

    Process of forming a dual overhang collimated lift-off stencil with subsequent metal deposition
    2.
    发明授权
    Process of forming a dual overhang collimated lift-off stencil with subsequent metal deposition 失效
    在随后的金属沉积中形成双悬垂准直剥离模板的工艺

    公开(公告)号：US5258264A

    公开(公告)日：1993-11-02

    申请号：US926659

    申请日：1992-08-06

    申请人： Gangadhara S. Mathad ,  David Stanasolovich ,  Giorgio G. Via

    发明人： Gangadhara S. Mathad ,  David Stanasolovich ,  Giorgio G. Via

    IPC分类号： H01L21/311 ,  H01L21/768 ,  G03F7/36 ,  G03F7/42

    CPC分类号： H01L21/7688 ,  H01L21/31116

    摘要： A process and structure for depositing metal lines in a lift-off process is disclosed. The process comprises the deposition of a four-layer structure or lift-off stencil, comprising a first layer of a lift-off polymer etchable in oxygen plasma, a first barrier layer of hexamethyldisilizane (HMDS) resistant to an oxygenplasma, a second lift-off layer and a second barrier layer. Once these layers are deposited, a layer of photoresist is deposited and lithographically defined with the metal conductor pattern desired. The layers are then sequentially etched with oxygen and CF.sub.4, resulting in a dual overhang lift-off structure. Metal is then deposited by evaporation or sputtering through the lift-off structure. Following metal deposition, the stencil is lifted-off in a solvent such as N-methylpyrroldone (NMP).

    摘要翻译： 公开了一种用于在剥离过程中沉积金属线的工艺和结构。 该方法包括沉积四层结构或剥离模板，其包括可在氧等离子体中蚀刻的剥离聚合物的第一层，耐氧气等级的六甲基二硅烷（HMDS）的第一阻挡层，第二提升 - 剥离层和第二阻挡层。 一旦沉积这些层，就会沉积一层光致抗蚀剂，并用所需的金属导体图案光刻地限定。 然后用氧和CF 4顺序蚀刻各层，得到双悬臂剥离结构。 然后通过蒸发或溅射将金属沉积通过剥离结构。 在金属沉积之后，在诸如N-甲基吡咯酮（NMP）的溶剂中将模板剥离。

    Method for monitoring the rate of etching of a semiconductor
    3.
    发明授权
    Method for monitoring the rate of etching of a semiconductor 有权
    监测半导体蚀刻速率的方法

    公开(公告)号：US06687014B2

    公开(公告)日：2004-02-03

    申请号：US10050737

    申请日：2002-01-16

    申请人： Shoaib Hasan Zaidi ,  Gangadhara S. Mathad

    发明人： Shoaib Hasan Zaidi ,  Gangadhara S. Mathad

    IPC分类号： G01B902

    CPC分类号： G01B11/0683 ,  G01B11/0675

    摘要： A method of measuring the rate of etching of trenches on a substrate using interferometry is provided. The method comprises transmitting onto the substrate incident electromagnetic radiation having a wavelength above the wavelength at which the trenches act as waveguides for the radiation; collecting reflected electromagnetic radiation from the substrate; detecting a repetitive pattern of maximum intensities and minimum intensities of the reflected electromagnetic radiation during the etching; and determining the rate of etching based upon the wavelength of the incident electromagnetic radiation and the time period of the pattern.

    摘要翻译： 提供了使用干涉测量法测量衬底上的沟槽的蚀刻速率的方法。 所述方法包括将具有波长高于波导的波长的入射电磁辐射传输到所述基底上，所述波长在所述波长处作为所述辐射的波导; 收集来自基板的反射电磁辐射; 在蚀刻期间检测反射电磁辐射的最大强度和最小强度的重复图案; 以及基于入射的电磁辐射的波长和图案的时间周期来确定蚀刻速率。

    Method for control of etch profile
    4.
    发明授权
    Method for control of etch profile 失效
    控制蚀刻轮廓的方法

    公开(公告)号：US4671849A

    公开(公告)日：1987-06-09

    申请号：US730976

    申请日：1985-05-06

    申请人： Lee Chen ,  Gangadhara S. Mathad

    发明人： Lee Chen ,  Gangadhara S. Mathad

    IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/308 ,  C23F1/02

    CPC分类号： H01L21/31116

    摘要： A method for precisely controlling the profile of an opening etched in a layer of material, for example, an insulating layer. In one embodiment, wherein a silicon dioxide layer is reactive ion etched through a photoresist mask, the concentration of a reactive species in an etchant gas is changed during the etching process to change the slope of the opening, the upper sidewall portion of the opening having a shallow slope and the lower sidewall portion of the opening having a steep slope. The final slope of the opening formed by this method is independent of the initial slopes of the images developed in the photoresist mask.

    摘要翻译： 一种用于精确地控制蚀刻在材料层（例如绝缘层）中的开口的轮廓的方法。 在一个实施方案中，其中二氧化硅层是通过光致抗蚀剂掩模进行反应离子蚀刻，蚀刻剂气体中的反应性物质的浓度在蚀刻过程中改变以改变开口的斜率，开口的上侧壁部分具有 开口的浅斜面和下侧壁部分具有陡峭的斜坡。 通过该方法形成的开口的最终斜率与在光致抗蚀剂掩模中显影的图像的初始斜率无关。

    Single wafer plasma etch reactor
    6.
    发明授权
    Single wafer plasma etch reactor 失效
    单晶片等离子体蚀刻反应器

    公开(公告)号：US4534816A

    公开(公告)日：1985-08-13

    申请号：US623670

    申请日：1984-06-22

    申请人： Lee Chen ,  Charles J. Hendricks ,  Gangadhara S. Mathad ,  Stanley J. Poloncic

    发明人： Lee Chen ,  Charles J. Hendricks ,  Gangadhara S. Mathad ,  Stanley J. Poloncic

    IPC分类号： H01L21/302 ,  H01J37/32 ,  H01L21/00 ,  H01L21/3065 ,  H01L21/306 ,  B44C1/22 ,  C03C15/00 ,  C23F1/02

    CPC分类号： H01L21/67069 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32623

    摘要： A high pressure, high etch rate single wafer plasma reactor having a fluid cooled upper electrode including a plurality of small diameter holes or passages therethrough to provide uniform reactive gas distribution over the surface of a wafer to be etched. A fluid cooled lower electrode is spaced from the upper electrode to provide an aspect ratio (wafer diameter: spacing) greater than about 25, and includes an insulating ring at its upper surface. The insulating ring protrudes above the exposed surface of the lower electrode to control the electrode spacing and to provide a plasma confinement region whereby substantially all of the RF power is dissipated by the wafer. A plurality of spaced apart, radially extending passages through the insulating ring provide a means of uniformly exhausting the reactive gas from the plasma confinement region. Affixed to the upper electrode is a first housing which supplies reactive gas and cooling fluid, and a baffle affixed to the first housing intermediate the upper electrode and a gas inlet forms a plenum above the upper electrode and ensures uniform reactive gas distribution thereover. The first housing and upper electrode are contained within a second housing with an insulating housing therebetween. The upper and lower electrodes are electrically isolated from each other and from ground, so that either or both electrodes may be powered.

    摘要翻译： 高压，高蚀刻速率的单晶片等离子体反应器，其具有流体冷却的上部电极，其包括多个小直径孔或穿过其中的通道，以在要蚀刻的晶片的表面上提供均匀的反应气体分布。 流体冷却的下电极与上电极隔开以提供大于约25的纵横比（晶片直径：间距），并且在其上表面包括绝缘环。 绝缘环突出在下电极的暴露表面之上，以控制电极间距并提供等离子体约束区域，从而基本上所有的RF功率都被晶片消散。 通过绝缘环的多个间隔开的径向延伸通道提供均匀排出来自等离子体限制区域的反应气体的装置。 与上电极相连的是提供反应性气体和冷却流体的第一壳体，以及固定在上电极之间的第一壳体的挡板和气体入口在上电极上形成集气室，并确保其上的均匀的反应气体分布。 第一壳体和上电极容纳在第二壳体中，其间具有绝缘壳体。 上电极和下电极彼此电隔离并且与地电隔离，使得电极或电极都可以被供电。

    Laser induced chemical etching of metals with excimer lasers
    7.
    发明授权
    Laser induced chemical etching of metals with excimer lasers 失效
    激光诱导化学蚀刻金属与准分子激光器

    公开(公告)号：US4490211A

    公开(公告)日：1984-12-25

    申请号：US573452

    申请日：1984-01-24

    申请人： Lee Chen ,  John R. Lankard ,  Gangadhara S. Mathad

    发明人： Lee Chen ,  John R. Lankard ,  Gangadhara S. Mathad

    IPC分类号： C23F4/00 ,  C23F4/02 ,  C23F4/04 ,  H01L21/302 ,  H05K3/02 ,  C23F1/02 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06

    CPC分类号： C23F4/02 ,  H05K3/027

    摘要： Disclosed is a method of etching a metallized substrate by excimer laser radiation. The substrate is exposed to a selected gas, e.g., a halogen gas, which spontaneously reacts with the metal forming a solid reaction product layer on the metal by a partial consumption of the metal. A beam of radiation from an excimer laser, e.g. XeF laser operating at a wavelength of 351 nm or XeCl laser at 308 nm or KrF laser at 248 nm or KrCl laser at 222 nm or ArF laser at 193 nm or F.sub.2 laser at 157 nm, is applied to the reaction product in a desired pattern to vaporize the reaction product and thereby selectively etch the metal with a high resolution.

    摘要翻译： 公开了一种通过准分子激光辐射蚀刻金属化衬底的方法。 将衬底暴露于选定的气体，例如卤素气体，其通过部分消耗金属与金属自发地与金属反应形成固体反应产物层。 来自准分子激光的辐射束，例如， 波长351nm的XeF激光或248nm的KrF激光或222nm的KrCl激光或193nm的ArF激光或157nm的F2激光的XeF激光以期望的图案施加到反应产物 以蒸发反应产物，从而以高分辨率选择性地蚀刻金属。

    Elimination/reduction of black silicon in DT etch
    8.
    发明授权
    Elimination/reduction of black silicon in DT etch 有权
    在DT蚀刻中消除/还原黑色硅

    公开(公告)号：US06489249B1

    公开(公告)日：2002-12-03

    申请号：US09597441

    申请日：2000-06-20

    申请人： Gangadhara S. Mathad ,  Rajiv Ranade

    发明人： Gangadhara S. Mathad ,  Rajiv Ranade

    IPC分类号： H01L2100

    CPC分类号： H01J37/32623 ,  H01J37/32642 ,  H01L21/3065 ,  Y10S156/915

    摘要： In a method of etching a wafer in a plasma etch reactor, the improvement of conducting etching to reduce or eliminate “black silicon” comprising: a) providing a plasma etch reactor comprising walls defining an etch chamber; b) providing a plasma source chamber remote from and in communication with the etch chamber to provide a plasma to the etch chamber, and a wafer chuck or pedestal disposed in the etch chamber to seat a wafer; c) providing a dielectric wall in proximity to and around a periphery of the wafer; d) providing a modification to a lower Rf electrode by interposing conductor means into an extension of Vdc flat sheath boundary relationship to the dielectric wall means and the wafer or in substitution for the dielectric wall; e) forming a plasma within the plasma source chamber and providing the plasma to the etch chamber; and f) supplying Rf energy to the wafer chuck to assist etching of the wafer by forming electric fields between the upper surface of the wafer and the walls of the etch chamber, to provide extension of a Vdc flat sheath boundary beyond and into a defocusing relationship to the wafer edge to reduce mask erosion and eliminate occurrence of “black silicon” formation.

    摘要翻译： 在蚀刻等离子体蚀刻反应器中的晶片的方法中，改进导电蚀刻以减少或消除“黑硅”，包括：a）提供包含限定蚀刻室的壁的等离子体蚀刻反应器; b）提供等离子体源室远离 提供等离子体到蚀刻室，以及设置在蚀刻室中以安置晶片的晶片卡盘或基座; c）在晶片的周边附近和周围提供电介质壁; d）通过将导体装置插入到电介质壁装置和晶片的Vdc平面鞘边界关系的延伸部中或代替电介质壁来提供对下部Rf电极的修改; e）在等离子体源室内形成等离子体;以及 将等离子体提供给蚀刻室; 以及f）通过在晶片的上表面和蚀刻室的壁之间形成电场来提供晶片卡盘的Rf能量以辅助晶片的蚀刻，以提供超过Vdc平坦护套边界超过和散焦关系的Vdc 晶圆边缘减少掩模侵蚀，消除“黑硅”形成的发生。