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公开(公告)号：US10042255B2
公开(公告)日：2018-08-07
申请号：US15297526
申请日：2016-10-19
Inventor： Huaxing Zhou , Vipul Jain , Jin Wuk Sung , Peter Trefonas, III , Phillip D. Hustad , Mingqi Li
IPC: G03F7/004 , G03F7/038 , C09D183/10 , G03F7/40 , G03F7/11 , G03F7/16 , C08L53/00 , C09D153/00 , H01L21/027 , H01L21/311 , C08F293/00 , G03F7/20 , G03F7/32
Abstract: Block copolymers comprise a first block comprising an alternating copolymer, and a second block comprising a unit comprising a hydrogen acceptor. The block copolymers find particular use in pattern shrink compositions and methods in semiconductor device manufacture for the provision of high resolution patterns.
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公开(公告)号：US20160357110A1
公开(公告)日：2016-12-08
申请号：US15172246
申请日：2016-06-03
Inventor： Huaxing Zhou , Mingqi Li , Vipul Jain , Jong Keun Park , Phillip D. Hustad , Jin Wuk Sung
CPC classification number: G03F7/405 , C08F293/00 , C09D153/00 , G03F7/002 , G03F7/0397 , G03F7/11 , G03F7/165 , G03F7/168 , G03F7/20 , G03F7/325 , G03F7/40 , H01L21/0274
Abstract: Pattern treatment methods comprise: (a) providing a semiconductor substrate comprising a patterned feature on a surface thereof; (b) applying a pattern treatment composition to the patterned feature, wherein the pattern treatment composition comprises a block copolymer and a solvent, wherein the block copolymer comprises a first block and a second block, wherein the first block comprises a unit formed from a first monomer comprising an ethylenically unsaturated polymerizable group and a hydrogen acceptor group, wherein the hydrogen acceptor group is a nitrogen-containing group, and the second block comprises a unit formed from a second monomer comprising an ethylenically unsaturated polymerizable group and a cyclic aliphatic group; and (c) rinsing residual pattern treatment composition from the substrate, leaving a portion of the block copolymer bonded to the patterned feature. The methods find particular applicability in the manufacture of semiconductor devices for providing high resolution patterns.
Abstract translation: 图案处理方法包括：（a）在其表面上提供包括图案化特征的半导体衬底; （b）将图案处理组合物施加到所述图案化特征，其中所述图案处理组合物包含嵌段共聚物和溶剂，其中所述嵌段共聚物包含第一嵌段和第二嵌段，其中所述第一嵌段包含由第一嵌段 包含烯属不饱和可聚合基团和氢受体基团的单体，其中所述氢受体基团是含氮基团，并且所述第二嵌段包含由包含烯键式不饱和可聚合基团和环状脂族基团的第二单体形成的单元; 和（c）从基材漂洗残余图案处理组合物，使一部分嵌段共聚物结合到图案化特征。 该方法在用于提供高分辨率图案的半导体器件的制造中具有特别的适用性。
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公开(公告)号：US10539873B2
公开(公告)日：2020-01-21
申请号：US14605465
申请日：2015-01-26
Applicant: Rohm and Haas Electronic Materials LLC
Inventor： James F. Cameron , Jin Wuk Sung , John P. Amara , Gregory P. Prokopowicz , David A. Valeri
IPC: G03F7/32 , G03F7/20 , G03F7/16 , G03F7/11 , G03F7/09 , C09D5/00 , C08F220/36 , C09D133/12 , B05D1/00 , B05D3/02 , B05D3/06 , B05D5/06 , B05D7/00
Abstract: Organic coating compositions, particularly antireflective coating compositions, are provided that comprise that comprise a diene/dienophile reaction product. Preferred compositions of the invention are useful to reduce reflection of exposing radiation from a substrate back into an overcoated photoresist layer and/or function as a planarizing, conformal or via-fill layer.
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公开(公告)号：US20170123316A1
公开(公告)日：2017-05-04
申请号：US15297526
申请日：2016-10-19
Inventor： Huaxing Zhou , Vipul Jain , Jin Wuk Sung , Peter Trefonas, III , Phillip D. Hustad , Mingqi Li
CPC classification number: G03F7/038 , B81C2201/0149 , C08F293/00 , C08F293/005 , C08F2438/03 , C08L53/00 , C09D153/00 , C09D183/10 , G03F7/0045 , G03F7/11 , G03F7/162 , G03F7/165 , G03F7/168 , G03F7/2004 , G03F7/325 , G03F7/40 , H01L21/0274 , H01L21/31144
Abstract: Block copolymers comprise a first block comprising an alternating copolymer, and a second block comprising a unit comprising a hydrogen acceptor. The block copolymers find particular use in pattern shrink compositions and methods in semiconductor device manufacture for the provision of high resolution patterns.
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公开(公告)号：US20160002199A1
公开(公告)日：2016-01-07
申请号：US14611768
申请日：2015-02-02
Applicant: Rohm and Haas Electronic Materials, LLC
Inventor： James F. Cameron , Vipul Jain , Paul J. Labeaume , Jin Wuk Sung , James W. Thackeray
IPC: C07D333/76 , C07C309/17 , G03F7/20 , G03F7/32 , G03F7/004 , G03F7/16
CPC classification number: C07D333/76 , C07C309/17 , C07C315/00 , C07C2603/86 , C07D333/46 , C08F12/30 , C08F220/24 , G03F7/004 , G03F7/0045 , G03F7/0046 , G03F7/027 , G03F7/0382 , G03F7/0392 , G03F7/0397 , G03F7/16 , G03F7/20 , G03F7/2004 , G03F7/2059 , G03F7/32
Abstract: Acid generator compounds are provided that are particularly useful as photoresist composition components. Preferred acid generators include cyclic sulfonium compounds that comprise a covalently linked acid-labile group.
Abstract translation: 提供了特别可用作光致抗蚀剂组合物组分的酸发生剂化合物。 优选的酸产生剂包括包含共价连接的酸不稳定基团的环状锍化合物。
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Patent Agency Ranking
公开(公告)号：US10703917B2
公开(公告)日：2020-07-07
申请号：US15652192
申请日：2017-07-17
Applicant: Rohm and Haas Electronic Materials LLC
Inventor： John P. Amara , James F. Cameron , Jin Wuk Sung , Gregory P. Prokopowicz
IPC: C09D5/00 , H01L21/027 , G03F7/16 , G03F7/20 , C08F220/36 , G03F7/09 , C07C69/76 , C07C69/94 , C09D133/14 , G03F7/32
Abstract: In one aspect, organic coating compositions, particularly antireflective coating compositions, are provided that comprise that comprise a diene/dienophile reaction product. In another aspect, organic coating compositions, particularly antireflective coating compositions, are provided that comprise a component comprising a hydroxyl-naphthoic group, such as a 6-hydroxy-2-naphthoic group Preferred compositions of the invention are useful to reduce reflection of exposing radiation from a substrate back into an overcoated photoresist layer and/or function as a planarizing, conformal or via-fill layer.
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公开(公告)号：US10133179B2
公开(公告)日：2018-11-20
申请号：US15224503
申请日：2016-07-29
Inventor： Jin Wuk Sung , Mingqi Li , Jong Keun Park , Joshua A. Kaitz , Vipul Jain , Chunyi Wu , Phillip D. Hustad
IPC: C09D153/02 , G03F7/40 , C09D153/00 , G03F7/038 , G03F7/20 , G03F7/32 , G03F7/38 , G03F7/039
Abstract: A pattern treatment method, comprising: (a) providing a semiconductor substrate comprising a patterned feature on a surface thereof; (b) applying a pattern treatment composition to the patterned feature, wherein the pattern treatment composition comprises: a block copolymer and an organic solvent, wherein the block copolymer comprises: (i) a first block comprising a first unit formed from 4-vinyl-pyridine, and (ii) a second block comprising a first unit formed from a vinyl aromatic monomer; and (c) removing residual pattern shrink composition from the substrate, leaving a coating of the block copolymer over the surface of the patterned feature, thereby providing a reduced pattern spacing as compared with a pattern spacing of the patterned feature prior to coating the pattern treatment composition. The methods find particular applicability in the manufacture of semiconductor devices for providing high resolution patterns.
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公开(公告)号：US20180031975A1
公开(公告)日：2018-02-01
申请号：US15224503
申请日：2016-07-29
Inventor： Jin Wuk Sung , Mingqi Li , Jong Keun Park , Joshua A. Kaitz , Vipul Jain , Chunyi Wu , Phillip D. Hustad
CPC classification number: G03F7/405 , C09D153/00 , G03F7/038 , G03F7/0397 , G03F7/20 , G03F7/32 , G03F7/325 , G03F7/38
Abstract: A pattern treatment method, comprising: (a) providing a semiconductor substrate comprising a patterned feature on a surface thereof; (b) applying a pattern treatment composition to the patterned feature, wherein the pattern treatment composition comprises: a block copolymer and an organic solvent, wherein the block copolymer comprises: (i) a first block comprising a first unit formed from 4-vinyl-pyridine, and (ii) a second block comprising a first unit formed from a vinyl aromatic monomer; and (c) removing residual pattern shrink composition from the substrate, leaving a coating of the block copolymer over the surface of the patterned feature, thereby providing a reduced pattern spacing as compared with a pattern spacing of the patterned feature prior to coating the pattern treatment composition. The methods find particular applicability in the manufacture of semiconductor devices for providing high resolution patterns.
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公开(公告)号：US20180031971A1
公开(公告)日：2018-02-01
申请号：US15223822
申请日：2016-07-29
Inventor： Phillip D. Hustad , Jong Park , Jieqian Zhang , Vipul Jain , Jin Wuk Sung
IPC: G03F7/09 , C08F293/00 , H01L21/308 , G03F7/20 , G03F7/32 , G03F7/038 , G03F7/16
CPC classification number: G03F7/094 , C08F293/00 , C08F293/005 , C09D153/00 , G03F7/0382 , G03F7/16 , G03F7/165 , G03F7/168 , G03F7/20 , G03F7/325 , G03F7/40 , H01L21/0273 , H01L21/0274 , C08F220/34 , C08F2220/1825
Abstract: Disclosed herein is a multi-layered article, comprising a substrate; and two or more layers disposed over the substrate, wherein each said layer comprises a block copolymer comprising a first block and a second block, wherein the first block comprises a repeat unit containing a hydrogen acceptor or a hydrogen donor, and the second block comprises a repeat unit containing a hydrogen donor when the repeat unit of the first block contains a hydrogen acceptor, or a hydrogen acceptor when the repeat unit of the first block contains a hydrogen donor; wherein the first block of an innermost of said two or more layers is bonded to the substrate, and the first block of each layer disposed over the innermost layer is bonded to the second block of a respective underlying layer; and wherein the hydrogen donor or hydrogen acceptor of the second block of an outermost said two or more layers is blocked.
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公开(公告)号：US20170313889A1
公开(公告)日：2017-11-02
申请号：US15652192
申请日：2017-07-17
Applicant: Rohm and Haas Electronic Materials LLC
Inventor： John P. Amara , James F. Cameron , Jin Wuk Sung , Gregory P. Prokopowicz
IPC: C09D5/00 , G03F7/32 , G03F7/20 , G03F7/16 , G03F7/09 , C09D133/14 , C08F220/36 , C07C69/94 , H01L21/027 , C07C69/76
CPC classification number: C09D5/006 , C07C69/76 , C07C69/94 , C08F220/36 , C09D133/14 , G03F7/091 , G03F7/16 , G03F7/168 , G03F7/20 , G03F7/322 , H01L21/0276
Abstract: In one aspect, organic coating compositions, particularly antireflective coating compositions, are provided that comprise that comprise a diene/dienophile reaction product. In another aspect, organic coating compositions, particularly antireflective coating compositions, are provided that comprise a component comprising a hydroxyl-naphthoic group, such as a 6-hydroxy-2-naphthoic group Preferred compositions of the invention are useful to reduce reflection of exposing radiation from a substrate back into an overcoated photoresist layer and/or function as a planarizing, conformal or via-fill layer.
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