Circuit arrangement for realizing logic elements that can be represented
by threshold value equations
    2.
    发明授权
    Circuit arrangement for realizing logic elements that can be represented by threshold value equations 失效
    用于实现可由阈值方程表示的逻辑元件的电路布置

    公开(公告)号:US5991789A

    公开(公告)日:1999-11-23

    申请号:US981664

    申请日:1997-12-04

    摘要: In a circuit arrangement wherein all logic elements can be represented in the form of a threshold value equation, for this purpose, transistors connected in parallel of a transistor unit are dimensioned in such a way that the cross-currents flowing through the transistors respectively represent a weighted summand of a first term of the threshold value equation. A second term of the threshold value equation is formed by a reference current representing the second term value. An evaluation unit compares an overall current, which results from the sum of cross-currents, with the reference current. The evaluation result is present at an output of the evaluation unit in the form of a stable output signal.

    摘要翻译: PCT No.PCT / DE96 / 00981 Sec。 371 1997年12月4日第 102(e)日期1997年12月4日PCT提交1996年6月4日PCT公布。 公开号WO96 / 42048 日期1996年12月27日在其中所有逻辑元件可以以阈值方程的形式表示的电路布置中,为此,为了将晶体管单元并联连接的晶体管的尺寸设计成使得流过 晶体管分别表示阈值方程的第一项的加权和。 阈值方程的第二项由表示第二项值的参考电流形成。 评估单元将由交叉电流之和产生的总电流与参考电流进行比较。 评估结果以稳定的输出信号的形式出现在评估单元的输出端。

    Circuit for comparing two electrical quantities
    3.
    发明授权
    Circuit for comparing two electrical quantities 失效
    电路比较两个电量

    公开(公告)号:US6166565A

    公开(公告)日:2000-12-26

    申请号:US973348

    申请日:1997-12-04

    CPC分类号: G06F7/53 G06F2207/4826

    摘要: The circuit arrangement has two electrical quantities in the form of a first quadrature-axis current component (I.sub.1) and of a second quadrature-axis current component (I.sub.2) that are compared to one another. The circuit arrangement has a first inverter unit (n.sub.1, p.sub.1) and a second inverter unit (n.sub.2, p.sub.2). Respectively one output (50, 52) of the two inverter units ((n.sub.1, p.sub.1, (n.sub.2, p.sub.2)) are coupled to an input of the respectively other inverter unit (52, 53). A reset unit (5) that initiates the comparison of the currents when activated is located between the two outputs of the two inverter units (n.sub.1, p.sub.2). When the reset unit (5) is deactivated, the output datum obtained in the evaluation remains stable.

    摘要翻译: PCT No.PCT / DE96 / 00971 Sec。 371 1997年12月4日第 102(e)1997年12月4日,PCT PCT 1996年6月3日PCT公布。 公开号WO96 / 42049 日期1996年12月27日该电路装置具有彼此进行比较的第一正交轴电流分量(I1)和第二正交轴电流分量(I2)形式的两个电量。 电路装置具有第一逆变器单元(n1,p1)和第二逆变单元(n2,p2)。 分别将两个逆变器单元((n1,p1,(n2,p2))的一个输出端(50,52)耦合到其他逆变器单元(52,53)的输入端,复位单元(5) 激活时的电流比较位于两个逆变器单元(n1,p2)的两个输出之间,复位单元(5)停用时,评估中得到的输出数据保持稳定。

    Circuit for comparing two electrical quantities provided by a first
neuron MOS field effect transistor and a reference source
    4.
    发明授权
    Circuit for comparing two electrical quantities provided by a first neuron MOS field effect transistor and a reference source 失效
    用于比较由第一神经元MOS场效应晶体管和参考源提供的两个电量的电路

    公开(公告)号:US5990709A

    公开(公告)日:1999-11-23

    申请号:US973447

    申请日:1997-12-04

    摘要: The circuit arrangement compares a quantity supplied by a first neuron MOS field effect transistor (M1) to a reference quantity that is made available by a reference source (R). A current mirror (SP) is provided therefor, this enabling a comparison of a second current (I.sub.2) supplied by a reference transistor (R) to a first current (I.sub.1) supplied by the first neuron MOS field effect transistor (M1). The evaluator circuit is activated or, respectively, decoupled by a first switch unit (S1) and a second switch unit (S2). What is thereby achieved is that no current flows in the evaluator circuit in the quiescent condition. The comparison result is applied to an inverter unit (IS). Since the inverter unit (IS) is decoupled from the evaluator circuit by the first switch unit (S1), an undefined level is never adjacent at the output (AIS) of the inverter unit (IS). This can be advantageously utilized in the further data processing in following stages.

    摘要翻译: PCT No.PCT / DE96 / 00972 Sec。 371 1997年12月4日第 102(e)1997年12月4日,PCT PCT 1996年6月3日PCT公布。 公开号WO96 / 42050 PCT 日期1996年12月27日电路装置将由第一神经元MOS场效应晶体管(M1)提供的量与由参考源(R)可用的参考量进行比较。 为此提供电流镜(SP),这使得能够将由参考晶体管(R)提供的第二电流(I2)与由第一神经元MOS场效应晶体管(M1)提供的第一电流(I1)进行比较。 评估器电路被第一开关单元(S1)和第二开关单元(S2)分别激活或分离。 由此实现的是在静态条件下在评估器电路中没有电流流动。 比较结果应用于逆变器单元(IS)。 由于逆变器单元(IS)由第一开关单元(S1)与评估器电路分离,所以在逆变器单元(IS)的输出(AIS)处,未定义的电平从不相邻。 这可以有利地用于后续阶段的进一步数据处理。

    Time recording device and a time recording method employing a semiconductor element
    6.
    发明授权
    Time recording device and a time recording method employing a semiconductor element 有权
    时间记录装置和采用半导体元件的时间记录方法

    公开(公告)号:US06909294B2

    公开(公告)日:2005-06-21

    申请号:US10638598

    申请日:2003-08-11

    摘要: A time recording device employs a floating gate cell, wherein an ON layer structure or an ONO layer structure is provided between floating gate and control gate. A charge injection unit is provided to inject charges into the floating gate electrode and into the nitride layer of the ON structure or the ONO structure by applying a voltage or voltage pulses to the control gate electrode, a center of concentration of the charges injected into the nitride layer being located at the interface between oxide layer and nitride layer of the layer sequence. The time recording device also includes a unit for recording a time which has elapsed since charge injection on the basis of changes in the transmission behavior of the channel region caused by a shift in the center of concentration of the charges in the nitride layer away from the interface.

    摘要翻译: 时间记录装置采用浮动栅极单元,其中在浮动栅极和控制栅极之间提供ON层结构或ONO层结构。 提供电荷注入单元,通过向控制栅电极施加电压或电压脉冲,注入到电荷注入单元中的电荷浓度的中心,将电荷注入到浮置栅电极中并进入ON结构或ONO结构的氮化物层 氮化物层位于层序列的氧化物层和氮化物层之间的界面处。 时间记录装置还包括用于记录从电荷注入以来经过的时间的单元,其基于由氮化物层中的电荷的浓度中心偏移导致的沟道区的透射行为的变化 接口。