Vitreous carbon mask substrate for X-ray lithography
    2.
    发明授权
    Vitreous carbon mask substrate for X-ray lithography 有权
    用于X射线光刻的玻璃碳掩模基板

    公开(公告)号:US07608367B1

    公开(公告)日:2009-10-27

    申请号:US11192797

    申请日:2005-07-28

    IPC分类号: G03F1/00

    CPC分类号: G03F1/22

    摘要: The present invention is directed to the use of vitreous carbon as a substrate material for providing masks for X-ray lithography. The new substrate also enables a small thickness of the mask absorber used to pattern the resist, and this enables improved mask accuracy. An alternative embodiment comprised the use of vitreous carbon as a LIGA substrate wherein the VC wafer blank is etched in a reactive ion plasma after which an X-ray resist is bonded. This surface treatment provides a surface enabling good adhesion of the X-ray photoresist and subsequent nucleation and adhesion of the electrodeposited metal for LIGA mold-making while the VC substrate practically eliminates secondary radiation effects that lead to delamination of the X-ray resist form the substrate, the loss of isolated resist features, and the formation of a resist layer adjacent to the substrate that is insoluble in the developer.

    摘要翻译: 本发明涉及玻璃碳作为基片材料用于提供用于X射线光刻的掩模的用途。 新的基板还能够使用用于图案化抗蚀剂的掩模吸收体的小的厚度,并且这使得能够改善掩模精度。 一个替代实施例包括使用玻璃碳作为LIGA衬底,其中VC晶片坯料在反应离子等离子体中被蚀刻,之后结合X射线抗蚀剂。 该表面处理提供了表面,使得能够良好地粘附X射线光致抗蚀剂并且随后的成核和用于LIGA模制的电沉积金属的粘附,而VC衬底实际上消除了导致X射线抗蚀剂分层的二次辐射效应 衬底,孤立的抗蚀剂特征的损失以及与基底相邻的抗蚀剂层的形成,其不溶于显影剂。

    Method for producing a thin sample band in a microchannel device
    5.
    发明授权
    Method for producing a thin sample band in a microchannel device 有权
    在微通道装置中制造薄样品带的方法

    公开(公告)号:US06770182B1

    公开(公告)日:2004-08-03

    申请号:US09714410

    申请日:2000-11-14

    IPC分类号: G01N2726

    摘要: The present invention improves the performance of microchannel systems for chemical and biological synthesis and analysis by providing a method and apparatus for producing a thin band of a species sample. Thin sample bands improve the resolution of microchannel separation processes, as well as many other processes requiring precise control of sample size and volume. The new method comprises a series of steps in which a species sample is manipulated by controlled transport through a junction formed at the intersection of four or more channels. A sample is first inserted into the end of one of these channels in the vicinity of the junction. Next, this sample is thinned by transport across the junction one or more times. During these thinning steps, flow enters the junction through one of the channels and exists through those remaining, providing a divergent flow field that progressively stretches and thins the band with each traverse of the junction. The thickness of the resulting sample band may be smaller than the channel width. Moreover, the thickness of the band may be varied and controlled by altering the method alone, without modification to the channel or junction geometries. The invention is applicable to both electroosmotic and electrophoretic transport, to combined electrokinetic transport, and to some special cases in which bulk fluid transport is driven by pressure gradients. It is further applicable to channels that are open, filled with a gel or filled with a porous or granular material.

    摘要翻译: 本发明通过提供用于生产物种样品的薄带的方法和装置来改进用于化学和生物合成和分析的微通道系统的性能。 薄样品条带提高了微通道分离过程的分辨率,以及需要精确控制样品量和体积的许多其他工艺。 新方法包括一系列步骤,其中物种样品通过受控传输通过形成在四个或更多个通道的交点处的连接点进行操纵。 样品首先在接头附近插入这些通道之一的末端。 接下来,该样品通过交联一次或多次通过运输而变薄。 在这些变薄步骤期间,流动通过其中一个通道进入接头,并通过其中一个通道存在,从而提供了一个发散的流场,其随着每个连接点的横越而逐渐拉伸并使带变薄。 所得样品带的厚度可以小于沟道宽度。 此外,可以通过改变单独的方法来改变和控制带的厚度,而不改变通道或结的几何形状。 本发明适用于电渗和电泳运输,组合电动运输,以及一些特殊情况,其中散装流体输送由压力梯度驱动。 它还适用于开放,充满凝胶或填充有多孔或颗粒状材料的通道。

    Support apparatus for semiconductor wafer processing
    6.
    发明授权
    Support apparatus for semiconductor wafer processing 失效
    用于半导体晶片处理的支撑装置

    公开(公告)号:US06576064B2

    公开(公告)日:2003-06-10

    申请号:US08891304

    申请日:1997-07-10

    IPC分类号: C23C1600

    摘要: A support apparatus for minimizing gravitational stress in semiconductor wafers, and particularly silicon wafers, during thermal processing. The support apparatus comprises two concentric circular support structures disposed on a common support fixture. The two concentric circular support structures, located generally at between 10 and 70% and 70 and 100% and preferably at 35 and 82.3% of the semiconductor wafer radius, can be either solid rings or a plurality of spaced support points spaced apart from each other in a substantially uniform manner. Further, the support structures can have segments removed to facilitate wafer loading and unloading. In order to withstand the elevated temperatures encountered during semiconductor wafer processing, the support apparatus, including the concentric circular support structures and support fixture can be fabricated from refractory materials, such as silicon carbide, quartz and graphite. The claimed wafer support apparatus can be readily adapted for use in either batch or single-wafer processors.

    摘要翻译: 一种用于在热处理期间最小化半导体晶片,特别是硅晶片中的重力应力的支撑装置。 支撑装置包括设置在公共支撑夹具上的两个同心的圆形支撑结构。 通常位于半导体晶片半径的10%至70%和70%和100%之间,优选为35%和82.3%的两个同心圆形支撑结构可以是固体环或彼此间隔开的多个间隔开的支撑点 以大致均匀的方式。 此外,支撑结构可以具有去除段以便于晶片加载和卸载。 为了承受半导体晶片加工过程中遇到的高温,包括同心圆形支撑结构和支撑固定装置在内的支撑装置可以由诸如碳化硅,石英和石墨的耐火材料制成。 所要求保护的晶片支撑装置可以容易地适用于批处理或单晶片处理器。

    Method and apparatus for thermal processing of semiconductor substrates
    7.
    发明授权
    Method and apparatus for thermal processing of semiconductor substrates 有权
    半导体衬底的热处理方法和装置

    公开(公告)号:US06355909B1

    公开(公告)日:2002-03-12

    申请号:US09641461

    申请日:2000-08-18

    IPC分类号: F27D1100

    摘要: An improved apparatus and method for thermal processing of semiconductor wafers. The apparatus and method provide the temperature stability and uniformity of a conventional batch furnace as well as the processing speed and reduced time-at-temperature of a lamp-heated rapid thermal processor (RTP). Individual wafers are rapidly inserted into and withdrawn from a furnace cavity held at a nearly constant and isothermal temperature. The speeds of insertion and withdrawal are sufficiently large to limit thermal stresses and thereby reduce or prevent plastic deformation of the wafer as it enters and leaves the furnace. By processing the semiconductor wafer in a substantially isothermal cavity, the wafer temperature and spatial uniformity of the wafer temperature can be ensured by measuring and controlling only temperatures of the cavity walls. Further, peak power requirements are very small compared to lamp-heated RTPs because the cavity temperature is not cycled and the thermal mass of the cavity is relatively large. Increased speeds of insertion and/or removal may also be used with non-isothermal furnaces.

    摘要翻译: 一种用于半导体晶片的热处理的改进的装置和方法。 该设备和方法提供常规分批炉的温度稳定性和均匀性以及加热快速热处理器(RTP)的处理速度和降低的时间温度。 将单个晶片快速插入并保持在几乎恒定和等温温度下的炉腔中。 插入和退出的速度足够大以限制热应力,从而减少或防止晶片进入和离开炉时的塑性变形。 通过在基本等温的空腔中处理半导体晶片,可以通过仅测量和控制空腔壁的温度来确保晶片温度的晶片温度和空间均匀性。 此外,与灯加热的RTP相比,峰值功率要求非常小,因为腔温度不循环并且腔的热质量相对较大。 插入和/或移除速度的增加也可以与非等温炉一起使用。

    Apparatus for producing a thin sample band in a microchannel system
    8.
    发明授权
    Apparatus for producing a thin sample band in a microchannel system 有权
    用于在微通道系统中产生薄样品带的装置

    公开(公告)号:US07371310B2

    公开(公告)日:2008-05-13

    申请号:US10818609

    申请日:2004-04-05

    IPC分类号: G01N27/453

    摘要: The present invention improves the performance of microchannel systems for chemical and biological synthesis and analysis by providing a method and apparatus for producing a thin band of a species sample. Thin sample bands improve the resolution of microchannel separation processes, as well as many other processes requiring precise control of sample size and volume. The new method comprises a series of steps in which a species sample is manipulated by controlled transport through a junction formed at the intersection of four or more channels. A sample is first inserted into the end of one of these channels in the vicinity of the junction. Next, this sample is thinned by transport across the junction one or more times. During these thinning steps, flow enters the junction through one of the channels and exists through those remaining, providing a divergent flow field that progressively stretches and thins the band with each traverse of the junction. The thickness of the resulting sample band may be smaller than the channel width. Moreover, the thickness of the band may be varied and controlled by altering the method alone, without modification to the channel or junction geometries. The invention is applicable to both electroosmotic and electrophoretic transport, to combined electrokinetic transport, and to some special cases in which bulk fluid transport is driven by pressure gradients. It is further applicable to channels that are open, filled with a gel or filled with a porous or granular material.

    摘要翻译: 本发明通过提供用于生产物种样品的薄带的方法和装置来改进用于化学和生物合成和分析的微通道系统的性能。 薄样品条带提高了微通道分离过程的分辨率,以及需要精确控制样品量和体积的许多其他工艺。 新方法包括一系列步骤,其中物种样品通过受控传输通过形成在四个或更多个通道的交点处的连接点进行操纵。 样品首先在接头附近插入这些通道之一的末端。 接下来,该样品通过交联一次或多次通过运输而变薄。 在这些变薄步骤期间,流动通过其中一个通道进入接头,并通过其中一个通道存在,从而提供了一个发散的流场,其随着每个连接点的横越而逐渐拉伸并使带变薄。 所得样品带的厚度可以小于沟道宽度。 此外,可以通过改变单独的方法来改变和控制带的厚度,而不改变通道或结的几何形状。 本发明适用于电渗和电泳运输,组合电动运输,以及一些特殊情况,其中散装流体输送由压力梯度驱动。 它还适用于开放,充满凝胶或填充有多孔或颗粒状材料的通道。

    Porous electrode apparatus for electrodeposition of detailed metal structures or microelectronic interconnections
    9.
    发明授权
    Porous electrode apparatus for electrodeposition of detailed metal structures or microelectronic interconnections 有权
    用于电沉积详细金属结构或微电子互连的多孔电极装置

    公开(公告)号:US06355147B1

    公开(公告)日:2002-03-12

    申请号:US09459008

    申请日:1999-12-10

    IPC分类号: C25B900

    摘要: An apparatus and procedure for performing microfabrication of detailed metal structures by electroforming metal deposits within small cavities. Two primary areas of application are: the LIGA process which manufactures complex three-dimensional metal parts and the damascene process used for electroplating line and via interconnections of microelectronic devices. A porous electrode held in contact or in close proximity with a plating substrate or mold top to ensure one-dimensional and uniform current flow into all mold cavities is used. Electrolyte is pumped over the exposed surface of the porous electrode to ensure uniform ion concentrations at this external surface. The porous electrode prevents electrolyte circulation within individual mold cavities, avoiding preferential enhancement of ion transport in cavities having favorable geometries. Both current flow and ion transport are one-dimensional and identical in all mold cavities, so all metal deposits grow at the same rate eliminating nonuniformities of the prior art.

    摘要翻译: 用于通过在小空腔内电铸金属沉积物来进行详细金属结构的微细加工的装置和程序。 两个主要应用领域是:生产复杂三维金属部件的LIGA工艺和用于电镀线路和微电子器件通孔互连的镶嵌工艺。 使用与电镀基板或模具顶部接触或紧密接触的多孔电极,以确保一维和均匀的电流流入所有模腔。 将电解液泵送到多孔电极的暴露表面上,以确保在该外表面上均匀的离子浓度。 多孔电极防止各个模腔内的电解质循环,避免在具有有利几何形状的空腔中优先增强离子传输。 电流和离子传输在所有模腔中都是一维的和相同的,因此所有金属沉积物以相同的速率生长,消除了现有技术的不均匀性。

    Method and apparatus for reducing sample dispersion in turns and junctions of microchannel systems
    10.
    发明授权
    Method and apparatus for reducing sample dispersion in turns and junctions of microchannel systems 失效
    用于减少微通道系统的匝道和接头处的样品分散的方法和装置

    公开(公告)号:US06270641B1

    公开(公告)日:2001-08-07

    申请号:US09299269

    申请日:1999-04-26

    IPC分类号: G01N2726

    摘要: The performance of microchannel devices is improved by providing turns, wyes, tees, and other junctions that produce little dispersions of a sample as it traverses the turn or junction. The reduced dispersion results from contraction and expansion regions that reduce the cross-sectional area over some portion of the turn or junction. By carefully designing the geometries of these regions, sample dispersion in turns and junctions is reduced to levels comparable to the effects of ordinary diffusion. A numerical algorithm was employed to evolve low-dispersion geometries by computing the electric or pressure field within candidate configurations, sample transport through the turn or junction, and the overall effective dispersion. These devices should greatly increase flexibility in the design of microchannel devices by permitting the use of turns and junctions that do not induce large sample dispersion. In particular, the ability to fold electrophoretic and electrochrornatographic separation columns will allow dramatic improvements in the miniaturization of these devices. The low-lispersion devices are particularly suited to electrochromatographic and electrophoretic separations, as well as pressure-driven chromatographic separation. They are further applicable to microfluidic systems employing either electroosrnotic or pressure-driven flows for sample transport, reaction, mixing, dilution or synthesis.

    摘要翻译: 微通道器件的性能通过提供匝,晶片,三通和其他在样品横穿转弯或结点时几乎不产生分散体的接头而得到改善。 缩小的分散体是由收缩和膨胀区域引起的,这些区域减小了转弯或结合部分的横截面面积。 通过仔细设计这些区域的几何形状,轮流和接头的样品分散度降低到与普通扩散效果相当的水平。 采用数值算法通过计算候选配置中的电场或压力场,通过转弯或结点的样品传输以及整体有效色散来演变低色散几何。 这些器件应通过允许使用不诱导大量样品分散的匝和接头来大大提高微通道器件设计的灵活性。 特别地,折叠电泳和电刺激分离柱的能力将允许这些装置的小型化的显着改进。 低分散装置特别适用于电色谱和电泳分离,以及压力驱动色谱分离。 它们还适用于采用电渗压或压力驱动流进行样品输送,反应,混合,稀释或合成的微流体系统。