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1.发明申请LIGHT-EMITTING DIODE, LIGHT-EMITTING DIODE LAMP, METHOD FOR MANUFACTURING LIGHT-EMITTING DIODE 审中-公开发光二极管，发光二极管灯，制造发光二极管的方法公开(公告)号：US20110298002A1
公开(公告)日：2011-12-08
申请号：US13202029
申请日：2010-01-25
IPC分类号： H01L33/60
CPC分类号： H01L33/641 , H01L33/0079 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014
摘要： The object of the invention is to provide a light-emitting diode that is excellent in terms of thermal radiation properties and is capable of suppressing cracks in the substrate during joining and emitting light with high luminance by applying a high voltage, a light-emitting diode lamp, and a method of manufacturing a light-emitting diode. The above object is achieved by using a light-emitting diode (1) having a heatsink substrate (5) joined to a light-emitting portion (3) including a light-emitting layer (2), in which the heatsink substrate (5) is formed by alternately laminating a first metal layer (21) and a second metal layer (22); the first metal layer (21) has a thermal conductivity of 130 W/m·K or higher and is made of a material having a thermal expansion coefficient substantially similar to the thermal expansion coefficient of a material for the light-emitting portion (3); and the second metal layer (22) is made of a material having a thermal conductivity of 230 W/m·K or higher.
摘要翻译： 本发明的目的是提供一种在热辐射性方面优异的发光二极管，并且能够通过施加高电压来抑制接合期间的基板的裂纹和高亮度的发光，发光二极管 灯和制造发光二极管的方法。 上述目的是通过使用具有接合到包括发光层（2）的发光部分（3）的散热基板（5）的发光二极管（1），其中散热基板（5） 通过交替层叠第一金属层（21）和第二金属层（22）而形成。 第一金属层（21）的热导率为130W / m·K以上，由与发光部（3）的材料的热膨胀系数基本相同的热膨胀系数的材料构成， ; 第二金属层（22）由导热率为230W / m·K以上的材料构成。
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2.发明授权公开(公告)号：US08901584B2
公开(公告)日：2014-12-02
申请号：US13255209
申请日：2010-03-03
IPC分类号： H01L33/00 , H01L23/00 , H01L33/12 , H01L33/30 , F21V7/00 , F21Y105/00 , F21Y101/02 , F21V7/09 , H01L33/08 , H01L33/20
CPC分类号： H01L33/30 , F21V7/0083 , F21V7/09 , F21Y2105/10 , F21Y2115/10 , H01L24/06 , H01L33/06 , H01L33/08 , H01L33/12 , H01L33/20 , H01L2224/05554 , H01L2224/05555 , H01L2224/0603 , H01L2224/45144 , H01L2224/48091 , H01L2224/49107 , H01L2224/73265 , H01L2924/01322 , H01L2924/10158 , H01L2924/12032 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A light emitting diode including a compound semiconductor layer having at least a pn junction-type light emitting unit and a strain adjustment layer stacked on the light emitting unit, wherein the light emitting unit has a stacked structure containing a strained light emitting layer having a composition formula of (AlXGa1-X)YIn1-YP (wherein X and Y are numerical values that satisfy 0≦X≦0.1 and 0.39≦Y≦0.45 respectively) and a barrier layer, and the strain adjustment layer is transparent to the emission wavelength and has a lattice constant that is smaller than the lattice constants of the strained light emitting layer and the barrier layer. The light emitting diode has an emission wavelength of not less than 655 nm, exhibits excellent monochromaticity, high output and/or high efficiency, and has a fast response speed.
摘要翻译： 一种发光二极管，其包括具有至少pn结型发光单元的化合物半导体层和堆叠在所述发光单元上的应变调整层，其中所述发光单元具有包含具有组成的应变发光层的堆叠结构 （AlXGa1-X）YIn1-YP（其中X和Y分别为满足0＆nlE; X＆lt; ll; 0.1和0.39＆nlE; Y＆nlE; 0.45的数值）和阻挡层，并且应变调节层对于发射波长是透明的 并且具有小于应变发光层和阻挡层的晶格常数的晶格常数。 发光二极管具有不小于655nm的发射波长，显示出优异的单色性，高输出和/或高效率，并且具有快速的响应速度。
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公开(公告)号：US08217405B2
公开(公告)日：2012-07-10
申请号：US12952427
申请日：2010-11-23
IPC分类号： H01L21/00
CPC分类号： H01L33/02 , H01L27/15 , H01L33/0079 , H01L33/145 , H01L33/16 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48465 , H01L2224/49107 , Y10S438/936 , H01L2924/00014 , H01L2924/00
摘要： A light-emitting diode includes a substrate, a compound semiconductor layer including a p-n junction-type light-emitting part formed on the substrate, an electric conductor disposed on the compound semiconductor layer and formed of an electrically conductive material optically transparent to the light emitted from the light-emitting part and a high resistance layer possessing higher resistance than the electric conductor and provided in the middle between the compound semiconductor layer and the electric conductor. In the configuration of a light-emitting diode lamp, the electric conductor and the electrode disposed on the semiconductor layer on the side opposite to the electric conductor across the light-emitting layer are made to assume an equal electric potential by means of wire bonding. The light-emitting diode abounds in luminance and excels in electrostatic breakdown voltage.
摘要翻译： 发光二极管包括基板，包括形成在基板上的pn结型发光部的化合物半导体层，配置在化合物半导体层上并由对所发出的光进行光学透明化的导电材料形成的导体 来自发光部分和具有比导体更高的电阻并且设置在化合物半导体层和电导体之间的中间的高电阻层。 在发光二极管灯的构造中，通过引线接合使设置在跨越发光层的与导电体相反一侧的半导体层上的电导体和电极呈现相等的电位。 发光二极管的亮度大，静电击穿电压也好。
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4.发明申请公开(公告)号：US20120007114A1
公开(公告)日：2012-01-12
申请号：US13255209
申请日：2010-03-03
IPC分类号： H01L33/30
CPC分类号： H01L33/30 , F21V7/0083 , F21V7/09 , F21Y2105/10 , F21Y2115/10 , H01L24/06 , H01L33/06 , H01L33/08 , H01L33/12 , H01L33/20 , H01L2224/05554 , H01L2224/05555 , H01L2224/0603 , H01L2224/45144 , H01L2224/48091 , H01L2224/49107 , H01L2224/73265 , H01L2924/01322 , H01L2924/10158 , H01L2924/12032 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A light emitting diode including a compound semiconductor layer having at least a pn junction-type light emitting unit and a strain adjustment layer stacked on the light emitting unit, wherein the light emitting unit has a stacked structure containing a strained light emitting layer having a composition formula of (AlXGa1-X)YIn1-YP (wherein X and Y are numerical values that satisfy 0≦X≦0.1 and 0.39≦Y≦0.45 respectively) and a barrier layer, and the strain adjustment layer is transparent to the emission wavelength and has a lattice constant that is smaller than the lattice constants of the strained light emitting layer and the barrier layer. The light emitting diode has an emission wavelength of not less than 655 nm, exhibits excellent monochromaticity, high output and/or high efficiency, and has a fast response speed.
摘要翻译： 一种发光二极管，其包括具有至少pn结型发光单元的化合物半导体层和堆叠在所述发光单元上的应变调整层，其中所述发光单元具有包含具有组成的应变发光层的堆叠结构 （AlXGa1-X）YIn1-YP（其中X和Y分别为满足0＆nlE; X＆lt; ll; 0.1和0.39＆nlE; Y＆nlE; 0.45的数值）和阻挡层，并且应变调节层对于发射波长是透明的 并且具有小于应变发光层和阻挡层的晶格常数的晶格常数。 发光二极管具有不小于655nm的发射波长，显示出优异的单色性，高输出和/或高效率，并且具有快速的响应速度。
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公开(公告)号：US09627578B2
公开(公告)日：2017-04-18
申请号：US13807608
申请日：2011-07-04
摘要： The present invention relates to an epitaxial wafer for a light-emitting diode wherein the peak emission wavelength is 655 nm or more, and it is possible to improve reliability. The epitaxial wafer for light-emitting diodes includes a GaAs substrate (1) and a pn-junction type light-emitting unit (2) provided on the GaAs substrate (1), wherein light-emitting unit (2) is formed as a multilayer structure in which a strained light-emitting layer and a barrier layer are alternately stacked, and the composition formula of the barrier layer is (AlXGa1-X)YIn1-YP (0.3≦X≦0.7, 0.51≦Y≦0.54).
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公开(公告)号：US09184345B2
公开(公告)日：2015-11-10
申请号：US13809294
申请日：2011-07-08
CPC分类号： H01L33/30 , A01G9/26 , H01L33/06 , H01L33/12 , H01L33/405 , H01L2224/45144 , H01L2224/48091 , H01L2224/48465 , H01L2224/49107 , H01L2224/73265 , H01L2924/12032 , Y02A40/274 , H01L2924/00014 , H01L2924/00
摘要： A light emitting diode is provided by the present invention which includes a pn junction-type light emitting unit having a light emitting layer (10) composed of n layers of a strained light emitting layer (12) and n−1 layers of a barrier layer (13), wherein when a barrier layer exists, the light emitting layer (10) has a structure in which one strained light emitting layer (12) and one barrier layer (13) are laminated alternately, n represents an integer of 1 to 7, and the thickness of the light emitting layer (10) is not more than 250 nm.
摘要翻译： 本发明提供一种发光二极管，其包括具有由n层应变发光层（12）构成的发光层（10）的pn结型发光单元和n层的阻挡层 （13），其中当存在阻挡层时，发光层（10）具有其中一个应变发光层（12）和一个阻挡层（13）交替层叠的结构，n表示1至7的整数 ，并且发光层（10）的厚度不大于250nm。
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7.发明申请METAL SUBSTRATE FOR LIGHT-EMITTING DIODE, LIGHT-EMITTING DIODE, AND METHOD FOR MANUFACTURING LIGHT-EMITTING DIODE 审中-公开用于发光二极管的金属基板，发光二极管以及制造发光二极管的方法公开(公告)号：US20120199873A1
公开(公告)日：2012-08-09
申请号：US13500479
申请日：2010-09-30
CPC分类号： H01L33/641
摘要： The object of the present invention is to provide a metal substrate for a light-emitting diode having excellent chemical resistance, a light-emitting diode, and a method for manufacturing the light-emitting diode, and the present invention provides a metal substrate for a light-emitting diode including a metal substrate, a compound semiconductor layer having a light-emitting portion, which is joined over the metal substrate via a junction layer, wherein the metal substrate for a light-emitting diode includes a metal plate and a metal protective film which covers at least an upper surface and a lower surface of the metal plate.
摘要翻译： 本发明的目的是提供一种具有优异耐化学性的发光二极管的金属基板，发光二极管及其制造方法，本发明提供一种用于 包括金属基板的发光二极管，具有发光部分的化合物半导体层，其经由接合层接合在金属基板上，其中用于发光二极管的金属基板包括金属板和金属保护 覆盖金属板的至少上表面和下表面的膜。
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公开(公告)号：US08482027B2
公开(公告)日：2013-07-09
申请号：US13255166
申请日：2010-02-24
摘要： An epitaxial wafer for a light emitting diode, including a GaAs substrate, a light emitting unit provided on the GaAs substrate, and a strain adjustment layer provided on the light emitting unit, wherein the light emitting unit has a strained light emitting layer having a composition formula of (AlXGa1-X)YIn1-YP (wherein X and Y are numerical values that satisfy 0≦X≦0.1 and 0.39≦Y≦0.45 respectively), and the strain adjustment layer is transparent to the emission wavelength and has a lattice constant that is smaller than the lattice constant of the GaAs substrate. The invention provides an epitaxial wafer that enables mass production of a high-output and/or high-efficiency LED having an emission wavelength of not less than 655 nm.
摘要翻译： 一种用于发光二极管的外延晶片，包括GaAs衬底，设置在GaAs衬底上的发光单元和设置在发光单元上的应变调节层，其中发光单元具有具有组成的应变发光层 （AlXGa1-X）YIn1-YP（其中X和Y分别为满足0 @ X @ 0.1和0.39 @ Y @ 0.45的数值），并且应变调节层对于发射波长透明并且具有晶格常数 小于GaAs衬底的晶格常数。 本发明提供一种外延晶片，其能够批量生产具有不小于655nm的发射波长的高输出和/或高效率LED。
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公开(公告)号：US20130112999A1
公开(公告)日：2013-05-09
申请号：US13809294
申请日：2011-07-08
IPC分类号： H01L33/30
CPC分类号： H01L33/30 , A01G9/26 , H01L33/06 , H01L33/12 , H01L33/405 , H01L2224/45144 , H01L2224/48091 , H01L2224/48465 , H01L2224/49107 , H01L2224/73265 , H01L2924/12032 , Y02A40/274 , H01L2924/00014 , H01L2924/00
摘要： A light emitting diode is provided by the present invention which includes a pn junction-type light emitting unit having a light emitting layer (10) composed of n layers of a strained light emitting layer (12) and n−1 layers of a barrier layer (13), wherein when a barrier layer exists, the light emitting layer (10) has a structure in which one strained light emitting layer (12) and one barrier layer (13) are laminated alternately, n represents an integer of 1 to 7, and the thickness of the light emitting layer (10) is not more than 250 nm.
摘要翻译： 本发明提供一种发光二极管，其包括具有由n层应变发光层（12）构成的发光层（10）的pn结型发光单元和n层的阻挡层 （13），其中当存在阻挡层时，发光层（10）具有其中一个应变发光层（12）和一个阻挡层（13）交替层叠的结构，n表示1至7的整数 ，并且发光层（10）的厚度不大于250nm。
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公开(公告)号：US07863630B2
公开(公告)日：2011-01-04
申请号：US11994606
申请日：2006-07-05
IPC分类号： H01L21/00
CPC分类号： H01L33/02 , H01L27/15 , H01L33/0079 , H01L33/145 , H01L33/16 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48465 , H01L2224/49107 , Y10S438/936 , H01L2924/00014 , H01L2924/00
摘要： A light-emitting diode includes a substrate, a compound semiconductor layer including a p-n junction-type light-emitting part formed on the substrate, an electric conductor disposed on the compound semiconductor layer and formed of an electrically conductive material optically transparent to the light emitted from the light-emitting part and a high resistance layer possessing higher resistance than the electric conductor and provided in the middle between the compound semiconductor layer and the electric conductor. In the configuration of a light-emitting diode lamp, the electric conductor and the electrode disposed on the semiconductor layer on the side opposite to the electric conductor across the light-emitting layer are made to assume an equal electric potential by means of wire bonding. The light-emitting diode abounds in luminance and excels in electrostatic breakdown voltage.
摘要翻译： 发光二极管包括基板，包括形成在基板上的pn结型发光部的化合物半导体层，配置在化合物半导体层上并由对所发出的光进行光学透明化的导电材料形成的导体 来自发光部分和具有比导体更高的电阻并且设置在化合物半导体层和电导体之间的中间的高电阻层。 在发光二极管灯的构造中，通过引线接合使设置在跨越发光层的与导电体相反一侧的半导体层上的电导体和电极呈现相等的电位。 发光二极管的亮度大，静电击穿电压也好。
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