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公开(公告)号:US11810905B2
公开(公告)日:2023-11-07
申请号:US17250633
申请日:2019-01-03
发明人: Hyun Min Cho , Dae Hyun Kim , Dong Uk Kim , Jung Hong Min , Seung A Lee , Hyung Rae Cha
IPC分类号: H01L25/075 , H01L27/12 , H01L33/00 , H01L33/22 , H01L33/62
CPC分类号: H01L25/0753 , H01L27/1214 , H01L33/0093 , H01L33/22 , H01L33/62 , H01L2933/0066
摘要: Provided are a light emitting device, a method for manufacturing same, and a display device including the light emitting device. The method for manufacturing the light emitting device comprises the steps of: preparing a lower substrate including a substrate and a buffer semiconductor layer formed on the substrate, forming an element rod by forming a separating layer disposed on the lower substrate, forming a first conductivity type semiconductor layer, an active material layer, and a second conductivity type semiconductor layer on the separating layer, and etching the first conductivity type semiconductor layer, the active material layer, the second conductivity type semiconductor layer, and the separating layer in a direction perpendicular to the lower substrate, forming a first insulating layer surrounding an outer circumferential surface of the element rod, forming a second insulating layer surrounding an outer circumferential surface of the first insulating layer and separating the element rod from the lower substrate to form a light emitting element.
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公开(公告)号:US11942567B2
公开(公告)日:2024-03-26
申请号:US17377266
申请日:2021-07-15
发明人: Jung Hong Min , Dae Hyun Kim , Hyun Min Cho , Jong Hyuk Kang , Dong Uk Kim , Seung A Lee , Hyun Deok Im , Hyung Rae Cha
CPC分类号: H01L33/0093 , H01L33/0066 , H01L33/30
摘要: Provided is a method of manufacturing a light-emitting element, the method including positioning a substrate, forming a first separation layer, which includes a first sacrificial layer, an etching control layer on the first sacrificial layer, and a second sacrificial layer on the etching control layer, on the substrate, forming at least one first light-emitting element on the first separation layer, and separating the first light-emitting element from the substrate.
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3.
公开(公告)号:US11430912B2
公开(公告)日:2022-08-30
申请号:US17110574
申请日:2020-12-03
发明人: Jung Hong Min , Dae Hyun Kim , Seung A Lee , Hyun Min Cho , Jong Hyuk Kang , Dong Uk Kim , Hyun Deok Im , Hyung Rae Cha
IPC分类号: H01L33/00 , H01L27/15 , H01L33/32 , H01L21/302
摘要: A light emitting element, a method of manufacturing a light emitting element, and a display device including a light emitting element are provided. A method of manufacturing a light emitting element includes: preparing a lower panel including a substrate and a first sub conductive semiconductor layer on the substrate; forming a first mask layer including at least one mask pattern on at least a part of the lower panel to be spaced apart from each other and an opening region in which the mask patterns are spaced apart from each other; laminating a first conductive semiconductor layer, an active material layer, and a second conductive semiconductor layer on the first mask layer to form an element laminate; etching the element laminate in a vertical direction to form an element rod; and removing the mask pattern to separate the element rod from the lower panel.
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4.
公开(公告)号:US12035582B2
公开(公告)日:2024-07-09
申请号:US17255985
申请日:2018-09-20
发明人: Hyun Deok Im , Jong Hyuk Kang , Dae Hyun Kim , Jung Hong Min , Bek Hyun Lim , Hyun Min Cho
IPC分类号: H10K59/131
CPC分类号: H10K59/131
摘要: A display device includes: a first pixel stem wiring and a common stem wiring extending in a first direction and spaced apart from each other; a first pixel branch wiring branched from the first pixel stem wiring and extending in a second direction crossing the first direction; a common branch wiring branched from the common stem wiring and extending in the second direction; and a first light emitting element between the first pixel branch wiring and the common branch wiring. The first pixel branch wiring includes a base branch pattern connected to the first pixel stem wiring, a separate branch pattern spaced apart from the base branch pattern, and a bridge wiring connecting the base branch pattern to the separate branch pattern.
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公开(公告)号:US11069829B2
公开(公告)日:2021-07-20
申请号:US16435313
申请日:2019-06-07
发明人: Jung Hong Min , Dae Hyun Kim , Hyun Min Cho , Jong Hyuk Kang , Dong Uk Kim , Seung A Lee , Hyun Deok Im , Hyung Rae Cha
摘要: Provided is a method of manufacturing a light-emitting element, the method including positioning a substrate, forming a first separation layer, which includes a first sacrificial layer, an etching control layer on the first sacrificial layer, and a second sacrificial layer on the etching control layer, on the substrate, forming at least one first light-emitting element on the first separation layer, and separating the first light-emitting element from the substrate.
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公开(公告)号:US12119368B2
公开(公告)日:2024-10-15
申请号:US17276038
申请日:2019-04-23
发明人: Seung A Lee , Dong Uk Kim , Hyun Min Cho , Dae Hyun Kim , Jung Hong Min , Dong Eon Lee , Hyung Rae Cha
CPC分类号: H01L27/156 , H01L33/007 , H01L33/0093 , H01L33/0095 , H01L33/24 , H01L33/44 , H01L33/60 , H01L2933/0025
摘要: A method of manufacturing a light-emitting element comprises providing a semiconductor structure on a substrate, the semiconductor structure emitting light having different wavelength bands from each other, measuring the light having the different wavelength bands from each other and defining wavelength regions, forming nanopatterns spaced apart from each other on the semiconductor structure, the nanopatterns having different diameters from each other, and etching the semiconductor structure to form element rods.
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公开(公告)号:US11984470B2
公开(公告)日:2024-05-14
申请号:US17423290
申请日:2019-12-05
发明人: Keun Kyu Song , Jung Hong Min , Dae Hyun Kim , Dong Uk Kim , Hyun Min Cho
CPC分类号: H01L27/156 , H01L33/0066 , H01L33/0093 , H01L33/24 , H01L33/30 , H01L33/38 , H01L33/44 , H01L2933/0025
摘要: A light-emitting diode includes a first semiconductor region having a first conductive type; a second semiconductor region having a second conductive type; and an active layer disposed between the first semiconductor region and the second semiconductor region and including phosphorus (P). The light-emitting diode has a rod shape, the second semiconductor region includes a first semiconductor layer, a second semiconductor layer, and a third semiconductor layer, which are sequentially stacked, the first semiconductor layer is disposed between the active layer and the second semiconductor layer, and the second semiconductor layer includes a compound represented by AlGaInP and satisfying Equation 1.
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公开(公告)号:US11682693B2
公开(公告)日:2023-06-20
申请号:US17316339
申请日:2021-05-10
发明人: Dong Uk Kim , Hyun Min Cho , Keun Kyu Song , Dae Hyun Kim , Jung Hong Min , Seung A Lee , Hyung Rae Cha
CPC分类号: H01L27/156 , H01L33/504 , H01L33/60 , H01L2933/0041 , H01L2933/0058
摘要: A display device includes a first pixel and a second pixel; a light emitting layer; a color conversion layer on the light emitting layer; and a color filter layer on the color conversion layer, the light emitting layer including one or more light emitting elements in the first pixel and the second pixel, the color conversion layer including a first color conversion layer in the first pixel and a second color conversion layer in the second pixel. The color filter layer includes a first color filter layer in the first pixel and a second color filter layer in the second pixel, the light emitting elements capable of emitting a first light having a first wavelength, each of the first color conversion layer and the second color conversion layer including first color conversion particles and second color conversion particles.
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公开(公告)号:US12046625B2
公开(公告)日:2024-07-23
申请号:US17265799
申请日:2019-01-14
发明人: Jung Hong Min , Dae Hyun Kim , Hyun Min Cho , Dong Uk Kim , Dong Eon Lee , Seung A Lee , Hyung Rae Cha
CPC分类号: H01L27/156 , H01L33/0095 , H01L33/12 , H01L33/22 , H01L33/38 , H01L33/40
摘要: Provided are a light-emitting element, a manufacturing method thereof, and a display device comprising the light-emitting element. The method for manufacturing the light-emitting element comprises the steps of: preparing a lower substrate including a substrate and a buffer material layer formed on the substrate, forming a separating layer disposed on the lower substrate and including at least one graphene layer, forming an element deposition structure by depositing a first conductivity type semiconductor layer, an active material layer, and a second conductivity type semiconductor layer on the separating layer, forming an element rod by etching the element deposition structure and the separating layer in a vertical direction; and separating the element rod from the lower substrate to form a light emitting element.
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公开(公告)号:US11949045B2
公开(公告)日:2024-04-02
申请号:US17290682
申请日:2019-05-27
发明人: Hyun Min Cho , Jung Hong Min , Dae Hyun Kim , Dong Uk Kim , Jae Hoon Jung
CPC分类号: H01L33/44 , H01L27/156 , H01L33/0093 , H01L33/24 , H01L2933/0025
摘要: Provided are a light-emitting diode structure and a light-emitting diode manufacturing method. The light-emitting diode manufacturing method comprises the operations of:
preparing a lower substrate, which includes a substrate and a separation layer formed on the substrate, and preparing at least one semiconductor rod, which is formed on the separation layer, forming a rod structure, which includes a rod protecting layer formed on the separation layer to surround the at least one semiconductor rod and an auxiliary layer formed on at least part of the rod protecting layer and separating the rod structure from the lower substrate by removing the separation layer, and separating the at least one semiconductor rod from the rod structure.
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