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    Nanostructure semiconductor light emitting device
    1.
    发明授权
    Nanostructure semiconductor light emitting device 有权
    纳米结构半导体发光器件

    公开(公告)号：US09287446B2

    公开(公告)日：2016-03-15

    申请号：US14605551

    申请日：2015-01-26

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Geon Wook Yoo ,  Kyung Wook Hwang ,  Yong Min Kim ,  Sung Hyun Sim

    IPC: H01L33/00 ,  H01L33/18 ,  H01L33/08 ,  H01L33/06 ,  H01L33/14

    CPC classification number: H01L33/06 ,  B82Y20/00 ,  H01L33/0025 ,  H01L33/08 ,  H01L33/145 ,  H01L33/18 ,  H01L33/24 ,  H01L33/44 ,  H01L33/52 ,  H01L2224/16245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

    Abstract: A nanostructure semiconductor light emitting device includes a base layer, an insulating layer, a plurality of light emitting nanostructures, and a contact electrode. The base layer is formed of a first conductivity-type semiconductor material. The insulating layer is disposed on the base layer. Each light emitting nanostructure is disposed in a respective opening of a plurality of openings in the base layer, and includes a nanocore formed of the first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on a surface of the nanocore. The contact electrode is spaced apart from the insulating layer and is disposed on a portion of the second conductivity-type semiconductor layer. A tip portion of the light emitting nanostructure has crystal planes different from those on side surfaces of the light emitting nanostructure.

    Abstract translation: 纳米结构半导体发光器件包括基底层，绝缘层，多个发光纳米结构和接触电极。 基层由第一导电型半导体材料形成。 绝缘层设置在基底层上。 每个发光纳米结构设置在基层中的多个开口的相应开口中，并且包括由第一导电型半导体材料形成的纳米孔，以及顺序地设置在第一导电类型半导体材料上的有源层和第二导电类型半导体层 纳米孔的表面。 接触电极与绝缘层隔开并设置在第二导电型半导体层的一部分上。 发光纳米结构的尖端部分具有与发光纳米结构的侧表面不同的晶面。

    Method of manufacturing nanostructure semiconductor light emitting device by forming nanocores into openings
    2.
    发明授权
    Method of manufacturing nanostructure semiconductor light emitting device by forming nanocores into openings 有权
    通过将纳米孔形成开口来制造纳米结构半导体发光器件的方法

    公开(公告)号：US09379283B2

    公开(公告)日：2016-06-28

    申请号：US14165112

    申请日：2014-01-27

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Nam Goo Cha ,  Geon Wook Yoo ,  Han Kyu Seong

    IPC: H01L33/20 ,  H01L33/00 ,  H01L33/18 ,  H01L33/24

    CPC classification number: H01L33/20 ,  H01L33/005 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24

    Abstract: A method of manufacturing a nanostructure semiconductor light emitting device including providing a base layer formed of a first conductivity type semiconductor. A mask including an etch stop layer is formed on the base layer. A plurality of openings are formed in the mask so as to expose regions of. A plurality of nanocores are formed by growing the first conductivity type semiconductor on the exposed regions of the base layer to fill the plurality of openings. The mask is partially removed by using the etch stop layer to expose side portions of the plurality of nanocores. An active layer and a second conductivity type semiconductor layer are sequentially grown on surfaces of the plurality of nanocores.

    Abstract translation: 一种制造纳米结构半导体发光器件的方法，包括提供由第一导电型半导体形成的基极层。 在基底层上形成包括蚀刻停止层的掩模。 在掩模中形成多个开口以暴露其中的区域。 通过在基底层的曝光区域上生长第一导电型半导体以填充多个开口来形成多个纳米孔。 通过使用蚀刻停止层来部分地去除掩模以暴露多个纳米孔的侧面部分。 在多个纳米孔的表面上依次生长有源层和第二导电型半导体层。

    Nano structure semiconductor light emitting device, and system having the same
    5.
    发明授权
    Nano structure semiconductor light emitting device, and system having the same 有权
    纳米结构半导体发光器件及其系统

    公开(公告)号：US09184343B2

    公开(公告)日：2015-11-10

    申请号：US14455853

    申请日：2014-08-08

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Geon Wook Yoo ,  Jae Hyeok Heo ,  Sam Mook Kang ,  Han Kyu Seong

    IPC: H01L51/50 ,  B82Y20/00 ,  B82Y40/00 ,  H01L33/04 ,  H01L33/08 ,  H01L33/64

    CPC classification number: H01L33/04 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L33/64

    Abstract: A nanostructure semiconductor light emitting device may include a substrate including a plurality of light emitting nanostructures comprising nanocores including a first conductivity type semiconductor, active layers and second conductivity type semiconductor layers sequentially formed on the nanocores. The light emitting region may include a first region and a second region. The interval between the light emitting nanostructures disposed in the first region may be different than the interval between the light emitting nanostructures disposed in the second region. The first region may be closer to a non-light emitting region than the second region and may have a smaller interval between the light emitting nanostructures than that of the second region. Systems implementing such a nanostructure semiconductor light emitting device and methods of manufacture are also disclosed.

    Abstract translation: 纳米结构半导体发光器件可以包括包括多个发光纳米结构的衬底，其包括依次形成在纳米孔上的包括第一导电类型半导体，有源层和第二导电类型半导体层的纳米孔。 发光区域可以包括第一区域和第二区域。 设置在第一区域中的发光纳米结构之间的间隔可以不同于设置在第二区域中的发光纳米结构之间的间隔。 第一区域可以比第二区域更靠近非发光区域，并且可以在发光纳米结构之间具有比第二区域更小的间隔。 还公开了实施这种纳米结构半导体发光器件的系统和制造方法。

    Method of manufacturing a nanostructure light emitting device by planarizing a surface of the device
    7.
    发明授权
    Method of manufacturing a nanostructure light emitting device by planarizing a surface of the device 有权
    通过使器件的表面平坦化来制造纳米结构发光器件的方法

    公开(公告)号：US09385266B2

    公开(公告)日：2016-07-05

    申请号：US14165168

    申请日：2014-01-27

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Nam Goo Cha ,  Dong Ho Kim ,  Geon Wook Yoo

    IPC: H01L33/00 ,  H01L33/08 ,  H01L33/24 ,  H01L33/06 ,  H01L33/36 ,  H01L33/44

    CPC classification number: H01L33/06 ,  H01L33/005 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/0095 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L33/36 ,  H01L33/382 ,  H01L33/387 ,  H01L33/40 ,  H01L33/44 ,  H01L2933/0016 ,  H01L2933/0025

    Abstract: A nanostructure semiconductor light emitting device includes a base layer, an insulating layer, and a plurality of light emitting nanostructures. The base layer includes a first conductivity type semiconductor. The insulating layer is disposed on the base layer and has a plurality of openings through which regions of the base layer are exposed. The light emitting nanostructures are respectively disposed on the exposed regions of the base layer and include a plurality of nanocores having a first conductivity type semiconductor and having side surfaces provided as the same crystal planes. The light emitting nanostructures include an active layer and a second conductivity type semiconductor layer sequentially disposed on surfaces of the nanocores. Upper surfaces of the nanocores are provided as portions of upper surfaces of the light emitting nanostructures, and the upper surfaces of the light emitting nanostructures are substantially planar with each other.

    Abstract translation: 纳米结构半导体发光器件包括基极层，绝缘层和多个发光纳米结构。 基极层包括第一导电型半导体。 绝缘层设置在基底层上并具有多个开口，基底层的区域暴露在该开口中。 发光纳米结构分别设置在基层的露出区域上，并且包括多个具有第一导电型半导体的纳米孔，并具有设置为相同晶面的侧面。 发光纳米结构包括依次设置在纳米孔表面上的有源层和第二导电类型半导体层。 纳米孔的上表面被提供为发光纳米结构的上表面的部分，并且发光纳米结构的上表面彼此基本上是平面的。

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