公开(公告)号：US11270881B2

公开(公告)日：2022-03-08

申请号：US16385441

申请日：2019-04-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kaoru Yamamoto ,  Chang-Hyun Kim ,  Hyun-Jae Song ,  Keun-Wook Shin ,  Hyeon-Jin Shin ,  Sung-Joo An ,  Chang-Seok Lee ,  Kee-Young Jun ,  Geun-O Jeong ,  Jang-Hee Lee

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/67

Abstract: In a plasma deposition method, a substrate is loaded onto a substrate stage within a chamber. A first plasma is generated at a region separated from the substrate by a first distance. A first process gas is supplied to the first plasma region to perform a pre-treatment process on the substrate. A second plasma is generated at a region separated from the substrate by a second distance different from the first distance. A second process gas is supplied to the second plasma region to perform a deposition process on the substrate.

公开(公告)号：US08790775B2

公开(公告)日：2014-07-29

申请号：US13705700

申请日：2012-12-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Woo Kim ,  Hyeon-Jin Shin ,  Jae-young Choi

IPC: H01L31/042

CPC classification number: C01B21/064 ,  C01B21/0646 ,  C01P2004/24 ,  C01P2004/60 ,  C30B25/165 ,  C30B29/40 ,  H01L21/0254 ,  H01L21/02587 ,  H01L21/0262 ,  H01L29/1606 ,  H01L29/267 ,  H01L29/518 ,  H01L29/778

Abstract: A hexagonal boron nitride sheet having: a two-dimensional planar structure with a sp2 B—N covalent bond, a Van der Waals bond between boron-nitrogen layers, a root mean square surface roughness of about 2 nanometers or less, and a length of about 1 millimeter or greater.

Abstract translation: 具有：具有sp2 B-N共价键的二维平面结构，硼氮层之间的范德华键，约2纳米或更小的均方根表面粗糙度的六方氮化硼片，以及长度 约1毫米或更大。

公开(公告)号：US09902619B2

公开(公告)日：2018-02-27

申请号：US14246364

申请日：2014-04-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-young Choi ,  Hyeon-Jin Shin ,  Seon-mi Yoon

IPC: B32B5/16 ,  C01B3/00 ,  C01B31/04 ,  B82Y30/00 ,  B82Y40/00 ,  G02B6/032 ,  C01B32/184

CPC classification number: C01B32/184 ,  B82Y30/00 ,  B82Y40/00 ,  C01B3/0015 ,  C01B2204/02 ,  C01B2204/04 ,  G02B6/032 ,  Y02E60/328 ,  Y10T428/2982 ,  Y10T428/2991

Abstract: Provided is a process for economically preparing a graphene shell having a desired configuration which is applicable in various fields wherein in the process the thickness of the graphene shell can be controlled, and a graphene shell prepared by the process.

公开(公告)号：US09670590B2

公开(公告)日：2017-06-06

申请号：US13682425

申请日：2012-11-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-Young Choi ,  Hyeon-Jin Shin ,  Seon-mi Yoon

IPC: C01B31/04 ,  C30B19/08 ,  B81C1/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L29/16 ,  H01L29/43 ,  H05K3/10 ,  C30B19/12 ,  C30B25/10 ,  C30B25/18 ,  C30B29/02 ,  C30B29/64

CPC classification number: C30B19/08 ,  B81B2207/056 ,  B81C1/00031 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/188 ,  C30B19/12 ,  C30B25/10 ,  C30B25/18 ,  C30B29/02 ,  C30B29/64 ,  H01L29/1606 ,  H01L29/43 ,  H05K3/105 ,  H05K2201/0323 ,  Y10S977/734 ,  Y10S977/842 ,  Y10S977/843 ,  Y10T428/24802 ,  Y10T428/24851 ,  Y10T428/24917

Abstract: Provided are a graphene pattern and a process of preparing the same. Graphene is patterned in a predetermined shape on a substrate to form the graphene pattern. The graphene pattern can be formed by forming a graphitizing catalyst pattern on a substrate, contacting a carbonaceous material with the graphitizing catalyst and heat-treating the resultant.

公开(公告)号：US09534312B2

公开(公告)日：2017-01-03

申请号：US15042438

申请日：2016-02-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-young Choi ,  Hyeon-Jin Shin ,  Seon-mi Yoon ,  Jai-yong Han

IPC: C30B1/10 ,  C30B29/02 ,  C01B31/04 ,  B82Y30/00 ,  B82Y40/00

CPC classification number: C30B1/10 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/188 ,  C01B2204/04 ,  C30B29/02

Abstract: A single-crystal graphene sheet includes a polycyclic aromatic molecule wherein a plurality of carbon atoms are covalently bound to each other, the single-crystal graphene sheet comprising between about 1 layer to about 300 layers; and wherein a peak ratio of a Raman D band intensity to a Raman G band intensity is equal to or less than 0.2. Also described is a method for preparing a single-crystal graphene sheet, the method includes forming a catalyst layer, which includes a single-crystal graphitizing metal catalyst sheet; disposing a carbonaceous material on the catalyst layer; and heat-treating the catalyst layer and the carbonaceous material in at least one of an inert atmosphere and a reducing atmosphere. Also described is a transparent electrode including a single-crystal graphene sheet.

Abstract translation: 单晶石墨烯片包括其中多个碳原子彼此共价结合的多环芳族分子，单晶石墨烯片包含约1层至约300层; 并且其中拉曼D带强度与拉曼G带强度的峰值比等于或小于0.2。 还描述了制备单晶石墨烯片的方法，该方法包括形成包括单晶石墨化金属催化剂片的催化剂层; 在催化剂层上设置碳质材料; 以及在惰性气氛和还原气氛中的至少一种中对所述催化剂层和所述碳质材料进行热处理。 还描述了包括单晶石墨烯片的透明电极。