Semiconductor device and method of fabricating the same

    公开(公告)号:US11830737B2

    公开(公告)日:2023-11-28

    申请号:US17520634

    申请日:2021-11-06

    IPC分类号: H01L21/033

    摘要: Disclosed are semiconductor device fabricating method and semiconductor device fabricated by the same. The method includes forming on a lower mask layer first upper mask patterns and sacrificial spacers that cover sidewalls of the first upper mask patterns, forming first holes in the lower mask layer below the first upper mask patterns, forming second holes in the lower mask layer not covered by the first upper mask patterns and the sacrificial spacers, forming second upper mask patterns filling a space between the sacrificial spacers on the lower mask layer and also forming sacrificial patterns filling the first and second holes, removing the sacrificial spacers, using the first and second upper mask patterns to etch the lower mask layer, and removing the sacrificial patterns.

    EXTREME ULTRAVIOLET LIGTH SOURCE DEVICES
    6.
    发明申请
    EXTREME ULTRAVIOLET LIGTH SOURCE DEVICES 有权
    极致超紫外线源设备

    公开(公告)号:US20140319387A1

    公开(公告)日:2014-10-30

    申请号:US14105654

    申请日:2013-12-13

    IPC分类号: H05G2/00

    摘要: An extreme ultraviolet light (EUL) source device is disclosed, the device comprising: a chamber in which a gas flow and a droplet stream are provided; a droplet generator through which target material is changed into the droplet stream; and a shroud positioned along the droplet stream, the shroud shielding the droplet stream from the gas flow, wherein the droplet stream is irradiated by laser to produce plasma and generate an extreme ultraviolet light. The shroud includes flow guide surface features that guide accumulated target material away from a collector mirror that reflects and focuses the EUL.

    摘要翻译: 公开了一种极紫外光(EUL)源装置,该装置包括:设置有气流和液滴流的室; 目标材料通过该液滴发生器变成液滴流; 以及沿着液滴流定位的护罩,所述护罩屏蔽来自所述气流的液滴流,其中所述液滴流被激光照射以产生等离子体并产生极紫外光。 护罩包括引导表面特征,其引导累积的目标材料远离反射和聚焦EUL的收集器反射镜。

    SEMICONDUCTOR MANUFACTURING APPARATUS AND OPERATING METHOD THEREOF

    公开(公告)号:US20240251496A1

    公开(公告)日:2024-07-25

    申请号:US18628152

    申请日:2024-04-05

    IPC分类号: H05G2/00 G03F7/00 H01L21/268

    摘要: Disclosed are semiconductor manufacturing apparatuses and operating methods thereof. The semiconductor manufacturing apparatus includes an oscillation unit that includes a first seed laser, a second seed laser, and a seed module, wherein the first seed laser oscillates a first pulse, and wherein the second seed laser oscillates a second pulse, and an extreme ultraviolet generation unit configured to use the first and second pulses to generate extreme ultraviolet light. The seed module includes a plurality of mirrors configured to allow the first and second pulses to travel along first and second paths, respectively, and a pulse control optical system including a first optical element, a second optical element, and a third optical element. The pulse control optical system is on the second path that does not overlap the first path. The third optical element includes a lens between the first optical element and the second optical element.

    Semiconductor manufacturing apparatus and operating method thereof

    公开(公告)号:US11979973B2

    公开(公告)日:2024-05-07

    申请号:US17163945

    申请日:2021-02-01

    IPC分类号: H05G2/00 G03F7/00 H01L21/268

    摘要: Disclosed are semiconductor manufacturing apparatuses and operating methods thereof. The semiconductor manufacturing apparatus includes an oscillation unit that includes a first seed laser, a second seed laser, and a seed module, wherein the first seed laser oscillates a first pulse, and wherein the second seed laser oscillates a second pulse, and an extreme ultraviolet generation unit configured to use the first and second pulses to generate extreme ultraviolet light. The seed module includes a plurality of mirrors configured to allow the first and second pulses to travel along first and second paths, respectively, and a pulse control optical system including a first optical element, a second optical element, and a third optical element. The pulse control optical system is on the second path that does not overlap the first path. The third optical element includes a lens between the first optical element and the second optical element.

    SEMICONDUCTOR MANUFACTURING APPARATUS AND OPERATING METHOD THEREOF

    公开(公告)号:US20210385932A1

    公开(公告)日:2021-12-09

    申请号:US17163945

    申请日:2021-02-01

    IPC分类号: H05G2/00 H01L21/268

    摘要: Disclosed are semiconductor manufacturing apparatuses and operating methods thereof. The semiconductor manufacturing apparatus includes an oscillation unit that includes a first seed laser, a second seed laser, and a seed module, wherein the first seed laser oscillates a first pulse, and wherein the second seed laser oscillates a second pulse, and an extreme ultraviolet generation unit configured to use the first and second pulses to generate extreme ultraviolet light. The seed module includes a plurality of mirrors configured to allow the first and second pulses to travel along first and second paths, respectively, and a pulse control optical system including a first optical element, a second optical element, and a third optical element. The pulse control optical system is on the second path that does not overlap the first path. The third optical element includes a lens between the first optical element and the second optical element.