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公开(公告)号:US20200350262A1
公开(公告)日:2020-11-05
申请号:US16934889
申请日:2020-07-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Seon Hee Moon , Myung Sam Kang , Jin Gu Kim
IPC: H01L23/00 , H01L23/538 , H01L23/367 , H01L23/552 , H01L21/48 , H01L21/56 , H01L23/31
Abstract: A fan-out semiconductor package includes: a core member having a first through-hole and including a dummy metal layer; a first semiconductor chip disposed in the first through-hole and having a first active surface having first connection pads disposed thereon and a first inactive surface opposing the first active surface; a first encapsulant covering at least portions of the core member and the first semiconductor chip and filling at least portions of the first through-hole; and a first connection member disposed on the core member and the first active surface of the first semiconductor chip and including a first redistribution layer electrically connected to the first connection pads, wherein the dummy metal layer is electrically insulated from signal patterns of the first redistribution layer.
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公开(公告)号:US10727212B2
公开(公告)日:2020-07-28
申请号:US16170469
申请日:2018-10-25
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Seon Hee Moon , Myung Sam Kang , Young Gwan Ko , Chang Bae Lee , Jin Su Kim
IPC: H01L23/498 , H01L25/16 , H01L23/053 , H01L23/31 , H01L21/52 , H01L21/56 , H01L21/48 , H01L23/00
Abstract: A semiconductor package includes a connection structure including a first insulation layer, a second insulation layer, first and second wiring layers, and first and second connection vias. A core structure including a core member is on the first insulation layer. A first through-hole passes through the core member. Passive components are on the first insulation layer in the first through-hole and connected to the first wiring layer through the first connection via. A first encapsulant covers at least a portion of the passive components. A second through-hole passes through the core structure and the first insulation layer. A semiconductor chip is on the second insulation layer in the second through-hole and is connected to the second wiring layer through the second connection via. A second encapsulant covers at least a portion of the semiconductor chip.
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公开(公告)号:US10541221B2
公开(公告)日:2020-01-21
申请号:US16010754
申请日:2018-06-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Yong Jin Seol , Myung Sam Kang , Young Gwan Ko
IPC: H01L23/52 , H01L23/00 , H01L23/498 , H01L23/13 , H01L23/31
Abstract: A fan-out semiconductor package includes a core member having a through-hole in which a semiconductor chip is disposed. The semiconductor chip has an active surface having connection pads disposed thereon and an inactive surface opposing the active surface. An encapsulant encapsulates at least a portion of the semiconductor chip. A connection member is disposed on the active surface of the semiconductor chip and includes a redistribution layer electrically connected to the connection pads of the semiconductor chip. A passivation layer is disposed on the connection member. The fan-out semiconductor package further has a slot spaced part from the through-hole and penetrating through at least a portion of the core member or the passivation layer.
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公开(公告)号:US12148708B2
公开(公告)日:2024-11-19
申请号:US18141568
申请日:2023-05-01
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Yong Koon Lee , Myung Sam Kang , Young Gwan Ko , Young Chan Ko , Chang Bae Lee
IPC: H01L23/538 , H01L21/48 , H01L23/00 , H01L23/13 , H01L23/31 , H01L23/552 , H01L23/66 , H01L25/16 , H01Q1/38
Abstract: A semiconductor package including a core structure, in which a first and second semiconductor chips and passive components are embedded, a connection structure disposed on a first side of the core structure, and including a redistribution layer electrically connected to the first and second semiconductor chips and the passive components, and a metal pattern layer and a backside wiring layer disposed on a second side of the core structure opposing the first side, and spaced apart from each other. The core structure includes a first metal layer surrounding the first semiconductor chip, a second metal layer surrounding the first semiconductor chip, and the first metal layer, a third metal layer surrounding the second semiconductor chip, and a fourth metal layer surrounding the second semiconductor chip, the passive components, and the third metal layer, and each of the first to fourth metal layers is electrically connected to the metal pattern layer.
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公开(公告)号:US11842956B2
公开(公告)日:2023-12-12
申请号:US17355790
申请日:2021-06-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Myung Sam Kang , Bong Ju Cho , Young Gwan Ko , Moon Il Kim
IPC: H01L23/498 , H01L23/31 , H01L23/00 , H01L25/065
CPC classification number: H01L23/49827 , H01L23/3128 , H01L23/49861 , H01L24/13 , H01L25/0657
Abstract: A method includes forming a first package structure including a first connection member including a first redistribution layer, a first frame having a first through-portion, a first semiconductor chip having a connection pad electrically connected to the first redistribution layer, and a first encapsulant covering a portion of each of the first frame and the first semiconductor chip, forming a second package structure including a second connection member including a second redistribution layer, a second semiconductor chip having a second connection pad, and a second encapsulant covering a portion of the second semiconductor chip, forming a first through-via, the first through-via electrically connecting to the second redistribution layer, and laminating the first package structure on the second package structure. After the laminating, the first through-via penetrates through the first frame, the first encapsulant, and a portion of the first connection member, and is electrically connected to the first redistribution layer.
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公开(公告)号:US11676907B2
公开(公告)日:2023-06-13
申请号:US17353074
申请日:2021-06-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Yong Koon Lee , Myung Sam Kang , Young Gwan Ko , Young Chan Ko , Chang Bae Lee
IPC: H01L21/48 , H01L23/538 , H01L23/31 , H01L23/00 , H01L25/16 , H01L23/66 , H01L23/552 , H01Q1/38 , H01L23/13
CPC classification number: H01L23/5389 , H01L21/486 , H01L21/4853 , H01L21/4857 , H01L23/13 , H01L23/3128 , H01L23/3135 , H01L23/5386 , H01L23/552 , H01L23/66 , H01L24/05 , H01L24/19 , H01L24/24 , H01L24/82 , H01L25/16 , H01Q1/38 , H01L2223/6616 , H01L2223/6677 , H01L2224/24137 , H01L2224/24195 , H01L2224/82101 , H01L2924/1421 , H01L2924/19041 , H01L2924/19042 , H01L2924/19105 , H01L2924/3025
Abstract: A method including forming a frame having an opening, forming a first metal layer, forming a first encapsulant, forming an insulation layer on the first metal layer, forming a first through-hole and a second through-hole penetrating the insulation layer and the first encapsulant, forming a second metal layer and a third metal layer, forming a second encapsulant, forming a first metal via and a second metal via penetrating the second encapsulant and a metal pattern layer on the second encapsulant, and forming a connection structure. The first metal layer and the second metal layer respectively are formed to extend to a surface of each of the first encapsulant and the frame, facing the metal pattern layer, and the first metal layer and the second metal layer are connected to the metal pattern layer through the first metal via and the second metal via having heights different from each other.
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公开(公告)号:US11670623B2
公开(公告)日:2023-06-06
申请号:US17155260
申请日:2021-01-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Myung Sam Kang , Sang Kyu Lee , Jin Gu Kim , Yong Koon Lee
CPC classification number: H01L25/105 , H01L25/50 , H01L2225/1035 , H01L2225/1041 , H01L2225/1058 , H01L2225/1094
Abstract: A semiconductor package is provided. The semiconductor package includes a first substrate, a first semiconductor chip disposed on the first substrate, a heat sink structure comprising a lower heat sink pattern disposed on the first semiconductor chip, a metal film pattern disposed on the lower heat sink pattern, and an insulating film disposed on side walls of the lower heat sink pattern and side walls of the metal film pattern, an interposer disposed on the heat sink structure, and a solder ball which connects the heat sink structure and the interposer.
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公开(公告)号:US11515265B2
公开(公告)日:2022-11-29
申请号:US16934889
申请日:2020-07-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Seon Hee Moon , Myung Sam Kang , Jin Gu Kim
IPC: H01L21/48 , H01L23/00 , H01L23/538 , H01L23/367 , H01L23/552 , H01L21/56 , H01L23/31
Abstract: A fan-out semiconductor package includes: a core member having a first through-hole and including a dummy metal layer; a first semiconductor chip disposed in the first through-hole and having a first active surface having first connection pads disposed thereon and a first inactive surface opposing the first active surface; a first encapsulant covering at least portions of the core member and the first semiconductor chip and filling at least portions of the first through-hole; and a first connection member disposed on the core member and the first active surface of the first semiconductor chip and including a first redistribution layer electrically connected to the first connection pads, wherein the dummy metal layer is electrically insulated from signal patterns of the first redistribution layer.
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公开(公告)号:US11075193B2
公开(公告)日:2021-07-27
申请号:US16418885
申请日:2019-05-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Myung Sam Kang , Young Gwan Ko , Yong Jin Park , Seon Hee Moon
IPC: H01L23/552 , H01L25/16 , H01L23/498 , H01L21/56 , H01L23/00 , H01L21/48
Abstract: A semiconductor package includes a connection structure including an insulating layer, a redistribution layer disposed on the insulating layer, and a connection via penetrating through the insulating layer and connected to the redistribution layer, a frame disposed on the connection structure and having a through-hole, a semiconductor chip disposed in the through-hole on the connection structure and having a connection pad disposed to face the connection structure, and a passive component disposed on the frame.
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10.
公开(公告)号:US10825775B2
公开(公告)日:2020-11-03
申请号:US16149102
申请日:2018-10-01
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Myung Sam Kang , Jin Su Kim , Yong Jin Park , Young Gwan Ko , Yong Jin Seol
IPC: H01L29/00 , H01L23/538 , H01L23/552 , H01L23/00 , H01L23/367 , H01L23/31 , H01L21/56
Abstract: A semiconductor package includes a support member including a resin body having a first surface and a second surface opposing each other and having a cavity, and at least one passive component embedded in the resin body and having a connection terminal exposed from the first surface; a first connection member disposed on the first surface of the resin body, and having a first redistribution layer on the first insulating layer and connected to the connection terminal; a second connection member disposed on the first connection member and covering the cavity, and having a second redistribution layer on the second insulating layer and connected to the first redistribution layer; and a semiconductor chip disposed on the second connection member in the cavity.
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