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    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
    1.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
    半导体发光器件及其制造方法

    公开(公告)号：US20140131726A1

    公开(公告)日：2014-05-15

    申请号：US13974751

    申请日：2013-08-23

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sang Don LEE ,  Jong Uk SEO ,  Sang Heon HAN

    IPC: H01L33/32 ,  H01L33/00

    CPC classification number: H01L33/32 ,  H01L33/007 ,  H01L33/02

    Abstract: There are provided a semiconductor light emitting device and a method of manufacturing the same. The semiconductor light emitting device includes a base layer configured of a group III nitride semiconductor, a polarity modifying layer formed on a group III element polar surface of the base layer, and a light emitting laminate having a multilayer structure of the group III nitride semiconductor formed on the polarity modifying layer, an upper surface of at least one layer in the multilayer structure being formed of an N polar surface.

    Abstract translation: 提供了一种半导体发光器件及其制造方法。 半导体发光器件包括由III族氮化物半导体构成的基极层，形成在基极层的III族元素极性表面上的极性调整层，以及形成有III族氮化物半导体的多层结构的发光层叠体 在极性改性层上，多层结构中的至少一层的上表面由N极性表面形成。

    LIGHT EMITTING DEVICE PACKAGE
    2.
    发明申请
    LIGHT EMITTING DEVICE PACKAGE 审中-公开

    公开(公告)号：US20190189877A1

    公开(公告)日：2019-06-20

    申请号：US16018542

    申请日：2018-06-26

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Mi Hyun KIM ,  Young Hwan PARK ,  Sam Mook KANG ,  Joo Sung KIM ,  Jong Uk SEO ,  Young Jo TAK

    IPC: H01L33/62 ,  H01L33/40 ,  H01L33/38 ,  H01L33/64

    Abstract: A light emitting device package includes a package substrate and a submount on the package substrate. An upper surface of the submount includes a central region, first and second base regions spaced from the package substrate, relative to the central region, and a sloped region between the central region and the first and second base regions. A light emitting device chip is in the central region. A first electrode layer is between the central region and the light emitting device chip and extends onto the sloped region and the first base region. A second electrode layer is between the central region and the light emitting device chip, extends onto the sloped region and the second base region, and is spaced apart from the first electrode layer. First and second reflective layers are on the first and second electrode layers, respectively, and overlap the sloped region.

    ULTRAVIOLET SEMICONDUCTOR LIGHT EMITTING DEVICES
    3.
    发明申请
    ULTRAVIOLET SEMICONDUCTOR LIGHT EMITTING DEVICES 审中-公开

    公开(公告)号：US20190181298A1

    公开(公告)日：2019-06-13

    申请号：US16014073

    申请日：2018-06-21

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Young Hwan PARK ,  Mi Hyun KIM ,  Jong Uk SEO

    IPC: H01L33/32 ,  H01L33/20 ,  H01L33/06 ,  H01L33/40 ,  H01L33/00

    Abstract: An ultraviolet semiconductor light emitting device includes a semiconductor stack, a trench, a filling insulator, and first and second electrodes. The semiconductor stack includes first and second conductivity-type semiconductor layers and an active layer therebetween that includes an AlGaN semiconductor material. The trench extends through the second conductivity-type semiconductor layer and the active layer to the first conductivity-type semiconductor layer and has a first width. The filling insulator fills the trench such that the filling insulator extends at least through the active layer in the trench and includes of an insulating material having a particular refractive index. The first electrode is connected to the first conductivity-type semiconductor layer, and the second electrode is connected to the second conductivity-type semiconductor layer.

    METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE
    6.
    发明申请
    METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE 有权

    公开(公告)号：US20220246803A1

    公开(公告)日：2022-08-04

    申请号：US17720923

    申请日：2022-04-14

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Young Jo TAK ,  Joo Sung KIM ,  Jong Uk SEO ,  Dong Gun LEE ,  Yong Il KIM

    IPC: H01L33/38 ,  H01L33/62 ,  H01L25/075 ,  H01L33/52

    Abstract: A method of manufacturing a semiconductor light emitting device, the method including forming a first conductivity-type semiconductor layer on a substrate; forming an active layer on the first conductivity-type semiconductor layer; forming a mask layer having an opening on the active layer; growing a second conductivity-type semiconductor layer through the opening; removing the mask layer; removing a portion of the active layer and a portion of the first conductivity-type semiconductor layer that do not overlap the second conductivity-type semiconductor layer; and removing a portion of the first conductivity-type semiconductor layer to expose the substrate.

    LIGHT EMITTING DIODE DISPLAY DEVICE
    7.
    发明申请
    LIGHT EMITTING DIODE DISPLAY DEVICE 审中-公开

    公开(公告)号：US20190312083A1

    公开(公告)日：2019-10-10

    申请号：US16205454

    申请日：2018-11-30

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Tan SAKONG ,  YONG IL KIM ,  Jong Uk SEO ,  Ji Hye YEON

    IPC: H01L27/15 ,  H01L33/50

    Abstract: A light emitting diode display device is provided. The light emitting diode display device includes a first light emitting diode pixel including a first light emitting diode layer and a first color conversion material on the first light emitting diode layer, a second light emitting diode pixel including a second light emitting diode layer and a second color conversion material on the second light emitting diode layer, a separation film disposed between the first light emitting diode layer and the second light emitting diode layer and a partition disposed between the first color conversion material and the second color conversion material and including a partition material, wherein the first and second light emitting diode pixels are divided by the separation film and the partition, the partition is disposed on the separation film in alignment with the separation film such that the partition includes linear portions that extend in a first direction and the separation film includes linear portions that also extend in the first direction and vertically overlap the linear portions of the partition, and the partition material includes an insulating material different from silicon.

    NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF
    9.
    发明申请
    NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF 有权
    氮化物半导体发光器件及其制造方法

    公开(公告)号：US20140231863A1

    公开(公告)日：2014-08-21

    申请号：US14184171

    申请日：2014-02-19

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Kee Won LEE ,  Jong Uk SEO ,  Suk Ho YOON ,  Keon Hun LEE ,  Sang Don LEE

    IPC: H01L33/00 ,  H01L33/32

    CPC classification number: H01L33/007 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02658 ,  H01L33/0075 ,  H01L33/12 ,  H01L33/16 ,  H01L33/32

    Abstract: A method of fabricating a nitride semiconductor light emitting device is provided. The method includes growing a first group-III-nitride semiconductor layer on a substrate, the first group-III-nitride semiconductor layer having a top surface formed as a group-III-rich surface exhibiting a group-III-polarity and a bottom surface formed as a N-rich surface exhibiting a N-polarity. The method further includes selectively etching a N-polarity region in the top surface of the first group III nitride semiconductor layer, forming a second group III nitride semiconductor layer on the first group III nitride semiconductor layer to fill the etched N-polarity region and forming a light emitting structure including first and second conductivity type nitride semiconductor layers and an active layer on the second group III nitride semiconductor layer.

    Abstract translation: 提供一种制造氮化物半导体发光器件的方法。 该方法包括在衬底上生长第一III族氮化物半导体层，第一III族氮化物半导体层具有形成为具有III族极性的III族富集表面的顶表面和底表面 形成为呈现N极性的富N的表面。 该方法还包括选择性地蚀刻第一III族氮化物半导体层的顶表面中的N极区域，在第一III族氮化物半导体层上形成第二III族氮化物半导体层以填充蚀刻的N极区域并形成 包括第一和第二导电型氮化物半导体层的发光结构和在第二III族氮化物半导体层上的有源层。

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    10.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
    半导体发光器件

    公开(公告)号：US20130313518A1

    公开(公告)日：2013-11-28

    申请号：US13902610

    申请日：2013-05-24

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jong Uk SEO ,  Eun Deok SIM ,  Sang Don LEE ,  Hyun Kwon HONG

    IPC: H01L33/24

    CPC classification number: H01L33/24 ,  H01L33/22 ,  H01L33/30 ,  H01L33/44

    Abstract: A semiconductor light emitting device includes first and second conductivity-type semiconductor layers formed of AlxGayIn1-x-yP (0≦x≦1, 0≦y≦1, 0≦x+y≦1) or AlzGa1-zAs (0≦z≦1) and an active layer interposed between the first and second conductivity-type semiconductor layers, wherein at least one of the first and second conductivity-type semiconductor layers includes a low refractive index surface layer formed of (AlvGa1-v)0.5In0.5P (0.7≦v≦1) or AlwIn1-wP (0≦w≦1) and having depressions and protrusions.

    Abstract translation: 半导体发光器件包括由Al x Ga y In 1-x-y P（0≤x≤1,0≤y≤1,0@ x + y @ 1）或Al z Ga 1-zAs（0 @ z）形成的第一和第二导电型半导体层 其中介于第一和第二导电类型半导体层之间的有源层，其中第一和第二导电类型半导体层中的至少一个包括由（AlvGa1-v）0.5In0形成的低折射率表面层。 5P（0.7 @ v @ 1）或AlwIn1-wP（0 @ w @ 1）并具有凹陷和突起。

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