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    Three-dimensional memory devices having a single layer channel and methods of making thereof
    2.
    发明授权
    Three-dimensional memory devices having a single layer channel and methods of making thereof 有权
    具有单层通道的三维存储器件及其制造方法

    公开(公告)号：US09530785B1

    公开(公告)日：2016-12-27

    申请号：US14804564

    申请日：2015-07-21

    申请人： SanDisk Technologies, Inc.

    发明人： Sateesh Koka ,  Zhenyu Lu ,  Wei Zhao ,  Ching-Huang Lu ,  Henry Chien ,  Yingda Dong ,  Raghuveer S. Makala ,  Somesh Peri ,  Rahul Sharangpani ,  George Matamis ,  Yuichi Ikezono ,  Hiroyuki Ogawa

    IPC分类号： H01L29/76 ,  H01L27/115

    CPC分类号： H01L27/1157 ,  H01L21/28282 ,  H01L27/0688 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/11582

    摘要： A memory stack structure for a three-dimensional device includes an alternating stack of insulator layers and spacer material layers. A memory opening is formed through the alternating stack. A memory material layer, a tunneling dielectric layer, and a silicon oxide liner are formed in the memory opening. A sacrificial liner is subsequently formed over the tunneling dielectric layer. The layer stack is anisotropically etched to physically expose a semiconductor surface of the substrate underneath the memory opening. The sacrificial liner may be removed prior to, or after, the anisotropic etch. The silicon oxide liner is removed after the anisotropic etch. A semiconductor channel layer can be deposited directly on the tunneling dielectric layer as a single material layer without any interface therein.

    摘要翻译： 用于三维器件的存储器堆叠结构包括交替堆叠的绝缘体层和间隔物材料层。 通过交替堆叠形成存储器开口。 在存储器开口中形成记忆材料层，隧道介电层和氧化硅衬垫。 随后在隧道电介质层上形成牺牲衬垫。 层叠堆叠被各向异性蚀刻以物理地暴露存储器开口下方的衬底的半导体表面。 可以在各向异性蚀刻之前或之后去除牺牲衬垫。 在各向异性蚀刻之后去除氧化硅衬垫。 可以将半导体沟道层直接沉积在隧道电介质层上作为单个材料层而没有任何界面。

    Cobalt-containing conductive layers for control gate electrodes in a memory structure
    6.
    发明授权
    Cobalt-containing conductive layers for control gate electrodes in a memory structure 有权
    用于存储器结构中的控制栅电极的含钴导电层

    公开(公告)号：US09576966B1

    公开(公告)日：2017-02-21

    申请号：US14859710

    申请日：2015-09-21

    申请人： SANDISK TECHNOLOGIES INC.

    发明人： Somesh Peri ,  Raghuveer S. Makala ,  Sateesh Koka ,  Rahul Sharangpani

    IPC分类号： H01L27/115 ,  H01L27/02 ,  H01L21/283 ,  H01L21/324

    CPC分类号： H01L27/115 ,  H01L21/283 ,  H01L27/0207 ,  H01L27/1157 ,  H01L27/11582

    摘要： An alternating stack of insulating layers and sacrificial material layers can be formed over a substrate. Memory stack structures and a backside trench are formed through the alternating stack. Backside recesses are formed by removing the sacrificial material layers from the backside trench selective to the insulating layers. A cobalt-containing material is deposited such that the cobalt-containing material continuously extends at least between a neighboring pair of cobalt-containing material portions in respective backside recesses. An anneal is performed at an elevated temperature to migrate vertically-extending portions of the cobalt-containing material into the backside recesses, thereby forming vertically separated cobalt-containing material portions confined within the backside recesses. Sidewalls of the insulating layers may be rounded or tapered to facilitate migration of the cobalt-containing material.

    摘要翻译： 绝缘层和牺牲材料层的交替堆叠可以形成在衬底上。 通过交替堆叠形成存储器堆叠结构和背面沟槽。 通过从对绝缘层选择性的背面沟槽去除牺牲材料层而形成背面凹部。 沉积含钴材料，使得含钴材料至少在相应的背面凹槽中的相邻的一对含钴材料部分之间连续延伸。 在升高的温度下进行退火以将含钴材料的垂直延伸部分迁移到背面凹槽中，从而形成限制在背面凹槽内的垂直分离的含钴材料部分。 绝缘层的侧壁可以是圆形或锥形以促进含钴材料的迁移。