Shallow Trench Media
    2.
    发明申请
    Shallow Trench Media 有权
    浅沟渠媒体

    公开(公告)号:US20130222948A1

    公开(公告)日:2013-08-29

    申请号:US13862946

    申请日:2013-04-15

    CPC classification number: G11B5/82 B82Y10/00 G11B5/65 G11B5/66 G11B5/743 G11B5/855

    Abstract: A shallow trench discrete track media structure is fabricated by etching a magnetic recording layer to provide a plurality of discrete magnetic data tracks separated by shallow trenches. Each shallow trench has a trench floor formed at a depth in the magnetic recording layer that is less than the thickness of the magnetic recording layer. Exposed regions of the magnetic recording layer beneath the trench floor are reacted with reactive plasma to diminish the magnetic moment of the exposed regions.

    Abstract translation: 通过蚀刻磁记录层以提供由浅沟槽分隔的多个离散磁数据轨迹来制造浅沟槽离散轨道介质结构。 每个浅沟槽具有形成在磁记录层中深度小于磁记录层的厚度的沟槽底板。 在沟槽底部下方的磁记录层的暴露区域与反应性等离子体反应以减小暴露区域的磁矩。

    Shallow trench media
    5.
    发明授权
    Shallow trench media 有权
    浅沟槽媒体

    公开(公告)号:US08711519B2

    公开(公告)日:2014-04-29

    申请号:US13862946

    申请日:2013-04-15

    CPC classification number: G11B5/82 B82Y10/00 G11B5/65 G11B5/66 G11B5/743 G11B5/855

    Abstract: A shallow trench discrete track media structure is fabricated by etching a magnetic recording layer to provide a plurality of discrete magnetic data tracks separated by shallow trenches. Each shallow trench has a trench floor formed at a depth in the magnetic recording layer that is less than the thickness of the magnetic recording layer. Exposed regions of the magnetic recording layer beneath the trench floor are reacted with reactive plasma to diminish the magnetic moment of the exposed regions.

    Abstract translation: 通过蚀刻磁记录层以提供由浅沟槽分隔的多个离散磁数据轨迹来制造浅沟槽离散轨道介质结构。 每个浅沟槽具有形成在磁记录层中深度小于磁记录层的厚度的沟槽底板。 在沟槽底部下方的磁记录层的暴露区域与反应性等离子体反应以减小暴露区域的磁矩。

    Apparatus with sidewall protection for features
    9.
    发明授权
    Apparatus with sidewall protection for features 有权
    具有侧壁保护功能的设备

    公开(公告)号:US09171703B2

    公开(公告)日:2015-10-27

    申请号:US14137792

    申请日:2013-12-20

    Abstract: Provided herein is an apparatus, including a patterned resist overlying a substrate; a number of features of the patterned resist, wherein the number of features respectively includes a number of sidewalls; and a sidewall-protecting material disposed about the number of sidewalls, wherein the sidewall-protecting material is characteristic of a conformal, thin-film deposition, and wherein the sidewall-protecting material facilitates a high-fidelity pattern transfer of the patterned resist to the substrate during etching.

    Abstract translation: 本文提供了一种装置,包括覆盖衬底的图案化抗蚀剂; 图案化抗蚀剂的许多特征,其中特征的数量分别包括多个侧壁; 以及围绕所述侧壁数量设置的侧壁保护材料,其中所述侧壁保护材料是共形的薄膜沉积的特征,并且其中所述侧壁保护材料促进所述图案化抗蚀剂的高保真图案转移到 衬底。

    APPARATUS WITH SIDEWALL PROTECTION FOR FEATURES
    10.
    发明申请
    APPARATUS WITH SIDEWALL PROTECTION FOR FEATURES 有权
    装置与特征保护

    公开(公告)号:US20150179414A1

    公开(公告)日:2015-06-25

    申请号:US14137792

    申请日:2013-12-20

    Abstract: Provided herein is an apparatus, including a patterned resist overlying a substrate; a number of features of the patterned resist, wherein the number of features respectively includes a number of sidewalls; and a sidewall-protecting material disposed about the number of sidewalls, wherein the sidewall-protecting material is characteristic of a conformal, thin-film deposition, and wherein the sidewall-protecting material facilitates a high-fidelity pattern transfer of the patterned resist to the substrate during etching.

    Abstract translation: 本文提供了一种装置,包括覆盖衬底的图案化抗蚀剂; 图案化抗蚀剂的许多特征,其中特征的数量分别包括多个侧壁; 以及围绕所述侧壁数量设置的侧壁保护材料,其中所述侧壁保护材料是共形的薄膜沉积的特征,并且其中所述侧壁保护材料促进所述图案化抗蚀剂的高保真图案转移到 衬底。

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