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公开(公告)号:US20150167155A1
公开(公告)日:2015-06-18
申请号:US14635847
申请日:2015-03-02
Applicant: Seagate Technology LLC
Inventor: Michael Feldbaum , Koichi Wago , David Kuo
CPC classification number: C23C14/48 , C23C14/0605 , C23C14/08 , G11B5/84 , G11B5/8408 , G11B5/855 , Y10T428/24612
Abstract: Provided herein is a method including conformally depositing a first layer over a patterned resist; depositing a second, thicker layer over the first layer; etching the second layer to expose the first layer; and patterning a magnetic layer by ion implantation in accordance with the patterned resist to form a patterned magnet layer.
Abstract translation: 本文提供了一种方法,包括在图案化的抗蚀剂上共形沉积第一层; 在第一层上沉积第二较厚的层; 蚀刻第二层以暴露第一层; 以及通过根据图案化的抗蚀剂的离子注入构图磁性层以形成图案化磁体层。
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公开(公告)号:US20130222948A1
公开(公告)日:2013-08-29
申请号:US13862946
申请日:2013-04-15
Applicant: Seagate Technology LLC
Inventor: Zhaohui Fan , David Kuo
IPC: G11B5/82
Abstract: A shallow trench discrete track media structure is fabricated by etching a magnetic recording layer to provide a plurality of discrete magnetic data tracks separated by shallow trenches. Each shallow trench has a trench floor formed at a depth in the magnetic recording layer that is less than the thickness of the magnetic recording layer. Exposed regions of the magnetic recording layer beneath the trench floor are reacted with reactive plasma to diminish the magnetic moment of the exposed regions.
Abstract translation: 通过蚀刻磁记录层以提供由浅沟槽分隔的多个离散磁数据轨迹来制造浅沟槽离散轨道介质结构。 每个浅沟槽具有形成在磁记录层中深度小于磁记录层的厚度的沟槽底板。 在沟槽底部下方的磁记录层的暴露区域与反应性等离子体反应以减小暴露区域的磁矩。
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公开(公告)号:US09905259B2
公开(公告)日:2018-02-27
申请号:US14699412
申请日:2015-04-29
Applicant: Seagate Technology LLC
Inventor: Sundeep Chauhan , Alexander Kantorov , Kim Yang Lee , David Kuo , Rene Johannes Marinus Van de Veerdonk , Barmeshwar Vikaramaditya
CPC classification number: G11B5/865 , G03F7/0041 , G11B5/59638 , G11B5/746 , G11B5/855 , G11B11/03
Abstract: Provided herein is a method, including forming a first template including a first pattern, wherein forming the first template includes self-assembly of diblock copolymers guided by an initial pattern; forming a second template including a second pattern, wherein the second pattern corresponds to a servo pattern; and forming a master template from the first template, wherein the master template includes one or more portions of the first pattern combined with the second pattern.
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公开(公告)号:US08964515B2
公开(公告)日:2015-02-24
申请号:US14141834
申请日:2013-12-27
Applicant: Seagate Technology LLC
Inventor: Hamid Ghazvini , David Kuo , Minh Huong Le , Kim Yang Lee , HongYing Wang , Nobuo Kurataka , Yautzong Hsu , Henry Hung Yang
CPC classification number: G06K5/00 , G11B5/746 , G11B5/82 , G11B5/84 , G11B5/855 , G11B20/182 , G11B27/36 , G11B2220/2516
Abstract: A system and method of calibrating optical measuring equipment includes optically measuring discrete objects of a first known predictable pattern from a calibration apparatus, wherein the first known predictable pattern is a bit pattern. A recording surface optical reader is calibrated based on the optically measuring. Using the first known predictable pattern, contamination is filtered from the results of the optically measuring.
Abstract translation: 校准光学测量设备的系统和方法包括从校准装置光学测量第一已知可预测图案的离散物体,其中第一已知可预测图案是位图案。 基于光学测量校准记录表面光学读取器。 使用第一已知的可预测模式,从光学测量的结果中滤去污染物。
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公开(公告)号:US08711519B2
公开(公告)日:2014-04-29
申请号:US13862946
申请日:2013-04-15
Applicant: Seagate Technology LLC
Inventor: Zhaohui Fan , David Kuo
IPC: G11B5/82
Abstract: A shallow trench discrete track media structure is fabricated by etching a magnetic recording layer to provide a plurality of discrete magnetic data tracks separated by shallow trenches. Each shallow trench has a trench floor formed at a depth in the magnetic recording layer that is less than the thickness of the magnetic recording layer. Exposed regions of the magnetic recording layer beneath the trench floor are reacted with reactive plasma to diminish the magnetic moment of the exposed regions.
Abstract translation: 通过蚀刻磁记录层以提供由浅沟槽分隔的多个离散磁数据轨迹来制造浅沟槽离散轨道介质结构。 每个浅沟槽具有形成在磁记录层中深度小于磁记录层的厚度的沟槽底板。 在沟槽底部下方的磁记录层的暴露区域与反应性等离子体反应以减小暴露区域的磁矩。
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公开(公告)号:US09626996B2
公开(公告)日:2017-04-18
申请号:US14588865
申请日:2015-01-02
Applicant: Seagate Technology LLC
Inventor: XiaoMin Yang , Zhaoning Yu , Kim Yang Lee , Michael Feldbaum , Yautzong Hsu , Wei Hu , Shuaigang Xiao , Henry Yang , HongYing Wang , Rene Johannes Marinus van de Veerdonk , David Kuo
IPC: G03F7/004 , G11B5/855 , H01L21/3065 , G03F7/40 , H01L21/027 , G03F7/20 , H01L21/02 , B82Y10/00 , B82Y40/00 , G03F7/00 , B81C1/00 , B32B27/36 , B32B27/28 , B32B27/30 , B32B3/30 , G03F7/16 , B05D1/00 , C23F4/00
CPC classification number: G11B5/855 , B05D1/005 , B32B3/30 , B32B27/283 , B32B27/302 , B32B27/308 , B32B27/36 , B32B2457/14 , B81C1/00031 , B81C2201/0149 , B82Y10/00 , B82Y40/00 , C23F4/00 , G03F7/0002 , G03F7/0035 , G03F7/165 , G03F7/2022 , G03F7/203 , G03F7/2059 , G03F7/40 , H01L21/02112 , H01L21/0274 , H01L21/3065 , Y10T428/24612
Abstract: Provided herein is a method, including a) transferring an initial pattern of an initial template to a substrate; b) performing block copolymer self-assembly over the substrate with a density multiplication factor k; c) creating a subsequent pattern in a subsequent template with the density multiplication factor k; and d) repeating steps a)-c) with the subsequent template as the initial template until a design specification for the subsequent pattern with respect to pattern density and pattern resolution is met.
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公开(公告)号:US09181618B2
公开(公告)日:2015-11-10
申请号:US14635847
申请日:2015-03-02
Applicant: Seagate Technology LLC
Inventor: Michael Feldbaum , Koichi Wago , David Kuo
CPC classification number: C23C14/48 , C23C14/0605 , C23C14/08 , G11B5/84 , G11B5/8408 , G11B5/855 , Y10T428/24612
Abstract: Provided herein is a method including conformally depositing a first layer over a patterned resist; depositing a second, thicker layer over the first layer; etching the second layer to expose the first layer; and patterning a magnetic layer by ion implantation in accordance with the patterned resist to form a patterned magnet layer.
Abstract translation: 本文提供了一种方法,包括在图案化的抗蚀剂上共形沉积第一层; 在第一层上沉积第二较厚的层; 蚀刻第二层以暴露第一层; 以及通过根据图案化的抗蚀剂的离子注入构图磁性层以形成图案化磁体层。
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公开(公告)号:US20150302881A1
公开(公告)日:2015-10-22
申请号:US14699412
申请日:2015-04-29
Applicant: Seagate Technology LLC
Inventor: Sundeep Chauhan , Alexander Kantorov , Kim Yang Lee , David Kuo , Rene Johannes Marinus Van de Veerdonk , Barmeshwar Vikaramaditya
CPC classification number: G11B5/865 , G03F7/0041 , G11B5/59638 , G11B5/746 , G11B5/855 , G11B11/03
Abstract: Provided herein is a method, including forming a first template including a first pattern, wherein forming the first template includes self-assembly of diblock copolymers guided by an initial pattern; forming a second template including a second pattern, wherein the second pattern corresponds to a servo pattern; and forming a master template from the first template, wherein the master template includes one or more portions of the first pattern combined with the second pattern.
Abstract translation: 本文提供的方法包括形成包括第一图案的第一模板,其中形成第一模板包括由初始图案引导的二嵌段共聚物的自组装; 形成包括第二图案的第二模板,其中所述第二图案对应于伺服图案; 以及从所述第一模板形成主模板,其中所述主模板包括与所述第二模式组合的所述第一模式的一个或多个部分。
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公开(公告)号:US09171703B2
公开(公告)日:2015-10-27
申请号:US14137792
申请日:2013-12-20
Applicant: SEAGATE TECHNOLOGY LLC
Inventor: Shuaigang Xiao , David Kuo , Kim Y. Lee , XiaoMin Yang , Justin Hwu
CPC classification number: H01J37/32651 , C23C14/34 , C23C16/01 , G03F7/0002 , G03F7/40 , H01J2237/0203 , H01J2237/026 , H01J2237/3341 , H01L21/0337
Abstract: Provided herein is an apparatus, including a patterned resist overlying a substrate; a number of features of the patterned resist, wherein the number of features respectively includes a number of sidewalls; and a sidewall-protecting material disposed about the number of sidewalls, wherein the sidewall-protecting material is characteristic of a conformal, thin-film deposition, and wherein the sidewall-protecting material facilitates a high-fidelity pattern transfer of the patterned resist to the substrate during etching.
Abstract translation: 本文提供了一种装置,包括覆盖衬底的图案化抗蚀剂; 图案化抗蚀剂的许多特征,其中特征的数量分别包括多个侧壁; 以及围绕所述侧壁数量设置的侧壁保护材料,其中所述侧壁保护材料是共形的薄膜沉积的特征,并且其中所述侧壁保护材料促进所述图案化抗蚀剂的高保真图案转移到 衬底。
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公开(公告)号:US20150179414A1
公开(公告)日:2015-06-25
申请号:US14137792
申请日:2013-12-20
Applicant: SEAGATE TECHNOLOGY LLC
Inventor: Shuaigang Xiao , David Kuo , Kim Y. Lee , XiaoMin Yang , Justin Hwu
CPC classification number: H01J37/32651 , C23C14/34 , C23C16/01 , G03F7/0002 , G03F7/40 , H01J2237/0203 , H01J2237/026 , H01J2237/3341 , H01L21/0337
Abstract: Provided herein is an apparatus, including a patterned resist overlying a substrate; a number of features of the patterned resist, wherein the number of features respectively includes a number of sidewalls; and a sidewall-protecting material disposed about the number of sidewalls, wherein the sidewall-protecting material is characteristic of a conformal, thin-film deposition, and wherein the sidewall-protecting material facilitates a high-fidelity pattern transfer of the patterned resist to the substrate during etching.
Abstract translation: 本文提供了一种装置,包括覆盖衬底的图案化抗蚀剂; 图案化抗蚀剂的许多特征,其中特征的数量分别包括多个侧壁; 以及围绕所述侧壁数量设置的侧壁保护材料,其中所述侧壁保护材料是共形的薄膜沉积的特征,并且其中所述侧壁保护材料促进所述图案化抗蚀剂的高保真图案转移到 衬底。
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