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1.发明公开公开(公告)号：US20230260778A1
公开(公告)日：2023-08-17
申请号：US18137553
申请日：2023-04-21
IPC分类号： H01L21/02 , H01L21/304 , H01L21/306
CPC分类号： H01L21/02041 , H01L21/304 , H01L21/30604 , B23K26/38
摘要： A glass substrate is reused. The mass productivity of a semiconductor device is increased. A glass substrate one surface of which includes a first material and a second material. The first material includes one or both of a metal and a metal oxide. The second material includes one or both of a resin and a decomposition product of a resin. A cleaning method of a glass substrate, which includes a step of preparing the glass substrate one surface of which includes a first material and a second material and a step of exposing the first material by removing at least part of the second material.
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公开(公告)号：US20200295057A1
公开(公告)日：2020-09-17
申请号：US16884241
申请日：2020-05-27
发明人： Shunpei YAMAZAKI , Yasuharu HOSAKA , Satoru IDOJIRI , Kenichi OKAZAKI , Hiroki ADACHI , Daisuke KUBOTA
IPC分类号： H01L27/12 , H01L21/683 , H01L29/66 , H01L29/786
摘要： A peeling method at low cost with high mass productivity is provided. A resin layer having a thickness greater than or equal to 0.1 μm and less than or equal to 3 μm is formed over a formation substrate using a photosensitive and thermosetting material, a transistor including an oxide semiconductor in a channel formation region is formed over the resin layer, the resin layer is irradiated with light using a linear laser device, and the transistor and the formation substrate are separated from each other. A first region and a second region which is thinner than the first region or an opening can be formed in the resin layer. In the case of forming a conductive layer functioning as an external connection terminal or the like to overlap with the second region or the opening of the resin layer, the conductive layer is exposed.
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公开(公告)号：US20200067027A1
公开(公告)日：2020-02-27
申请号：US16493104
申请日：2018-03-06
发明人： Seiji YASUMOTO , Kayo KUMAKURA , Yuka SATO , Satoru IDOJIRI , Hiroki ADACHI , Kenichi OKAZAKI
摘要： A high-yield fabricating method of a semiconductor device including a peeling step is provided.A peeling method includes a step of stacking and forming a first material layer and a second material layer over a substrate and a step of separating the first material layer and the second material layer from each other. The second material layer is formed over the substrate with the first material layer therebetween. The first material layer includes a first compound layer in contact with the second material layer and a second compound layer positioned closer to the substrate side than the first compound layer is. The first compound layer has the highest oxygen content among the layers included in the first material layer. The second compound layer has the highest nitrogen content among the layers included in the first material layer. The second material layer includes a resin. In the step of separating, the first material layer and the second material layer are separated from each other by irradiation of an interface between the first material layer and the second material layer or the vicinity of the interface with light.
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公开(公告)号：US20180047609A1
公开(公告)日：2018-02-15
申请号：US15664367
申请日：2017-07-31
IPC分类号： H01L21/683 , H01L29/786 , H01L21/02 , H01L29/66 , H01L21/48 , H01L27/12
CPC分类号： H01L21/6835 , G02F1/133553 , G02F1/13439 , G02F1/1368 , G02F2201/123 , H01L21/02422 , H01L21/02488 , H01L21/02565 , H01L21/02631 , H01L21/02664 , H01L21/481 , H01L27/1218 , H01L27/1222 , H01L27/1225 , H01L27/1266 , H01L27/1274 , H01L27/3262 , H01L29/66969 , H01L29/78648 , H01L29/7869 , H01L51/0097 , H01L51/56 , H01L2221/68345 , H01L2221/6835 , H01L2221/68381 , H01L2221/68386 , H01L2251/5338
摘要： The yield of a manufacturing process of a display device is increased. The productivity of a display device is increased. A hydrogen-containing layer is formed over a substrate. Then, an oxygen-containing layer is formed over the hydrogen-containing layer. After that, a first layer is formed over the oxygen-containing layer with the use of a material containing a resin or a resin precursor. Subsequently, first heat treatment is performed on the first layer, so that a resin layer is formed. Next, a layer to be peeled is formed over the resin layer. The layer to be peeled and the substrate are separated from each other. The first heat treatment is performed in an oxygen-containing atmosphere.
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公开(公告)号：US20170294462A1
公开(公告)日：2017-10-12
申请号：US15473962
申请日：2017-03-30
发明人： Shunpei YAMAZAKI , Yasuharu HOSAKA , Satoru IDOJIRI , Kenichi OKAZAKI , Hiroki ADACHI , Daisuke KUBOTA
IPC分类号： H01L27/12 , H01L21/683 , H01L29/786 , H01L29/66
摘要： A peeling method at low cost with high mass productivity is provided. A resin layer having a thickness greater than or equal to 0.1 μm and less than or equal to 3 μm is formed over a formation substrate using a photosensitive and thermosetting material, a transistor including an oxide semiconductor in a channel formation region is formed over the resin layer, the resin layer is irradiated with light using a linear laser device, and the transistor and the formation substrate are separated from each other. A first region and a second region which is thinner than the first region or an opening can be formed in the resin layer. In the case of forming a conductive layer functioning as an external connection terminal or the like to overlap with the second region or the opening of the resin layer, the conductive layer is exposed.
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公开(公告)号：US20170186829A1
公开(公告)日：2017-06-29
申请号：US15388208
申请日：2016-12-22
CPC分类号： H01L27/3262 , H01L27/1218 , H01L27/1225 , H01L27/1259 , H01L27/3258 , H01L29/24 , H01L29/66969 , H01L29/7869 , H01L51/0024 , H01L51/003 , H01L51/0097 , H01L51/5253 , H01L2227/323 , H01L2227/326 , H01L2251/5338 , H01L2251/556 , Y02E10/549 , Y02P70/521
摘要： A flexible device is manufactured at low temperatures. A second substrate is bonded to a first substrate by a first adhesive layer. A first insulating layer, a transistor, and a second insulating layer are formed over the second substrate. Then, the first substrate and the second substrate are separated from each other while being heated at a first temperature. The heat resistant temperatures of the first substrate, the second substrate, and the first adhesive layer are a second temperature, a third temperature, and a fourth temperature, respectively. Each of the first insulating layer, the second insulating layer, and the transistor is formed at a temperature higher than or equal to room temperature and lower than the fourth temperature. The third temperature is higher than the fourth temperature and lower than the second temperature. The first temperature is higher than the fourth temperature and lower than the third temperature.
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公开(公告)号：US20150318200A1
公开(公告)日：2015-11-05
申请号：US14699576
申请日：2015-04-29
IPC分类号： H01L21/683 , H01L21/463 , H01L21/67
CPC分类号： H01L21/463 , B32B38/10 , B32B43/006 , H01L21/67092 , H01L21/6838 , Y10T156/1132 , Y10T156/1168 , Y10T156/1184 , Y10T156/1928 , Y10T156/1944 , Y10T156/1961 , Y10T156/1967 , Y10T156/1978
摘要： A wedge-shaped jig (6) is inserted into a gap between a first substrate (21) and a second substrate (22) at a corner (221) of the second substrate (22) and separation of the attached first substrate (21) and second substrate (22) starts to proceed; then, a second suction pad (53) of a second suction portion (51), which is the closest to the corner (221), moves upward. Then, first suction pads (43) of first suction portions (41a), (41b), and (41c) sequentially move upward such that one side of the second substrate (22) separates from the stacked body. Although the second substrate (22) warps as the separation of the second substrate (22) proceeds, each of the plurality of first suction pads (43) elastically deforms. Therefore, the first suction pads (43) can be prevented from being detached from the second substrate (22), and the substrate (22) can be securely separated from the stacked body.
摘要翻译： 在第二基板（22）的角部（221）处将楔形夹具（6）插入到第一基板（21）和第二基板（22）之间的间隙中，并且分离附接的第一基板（21） 并且第二基板（22）开始进行; 那么最靠近拐角（221）的第二吸入部（51）的第二吸盘（53）向上移动。 然后，第一吸引部（41a），（41b）和（41c）的第一吸盘（43）依次向上移动，使得第二基板（22）的一侧与层叠体分离。 尽管第二衬底（22）随着第二衬底（22）的分离进行而变形，但是多个第一吸附垫（43）中的每一个弹性变形。 因此，可以防止第一吸盘（43）与第二基板（22）分离，并且基板（22）能够与层叠体牢固地分离。
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公开(公告)号：US20150059987A1
公开(公告)日：2015-03-05
申请号：US14468662
申请日：2014-08-26
发明人： Kayo KUMAKURA , Tomoya AOYAMA , Akihiro CHIDA , Kohei YOKOYAMA , Masakatsu OHNO , Satoru IDOJIRI , Hisao IKEDA , Hiroki ADACHI , Yoshiharu HIRAKATA , Shingo EGUCHI , Yasuhiro JINBO
IPC分类号： B32B43/00
CPC分类号： B32B43/006 , B26D1/04 , B26D2001/006 , B32B38/10 , B32B2457/00 , G02B6/00 , H01L21/67092 , H01L27/1248 , H01L27/3258 , H01L27/3262 , H01L51/56 , H01L2221/68327 , H01L2227/323 , H01L2251/5338 , Y10T156/1126 , Y10T156/1132 , Y10T156/1168 , Y10T156/1184 , Y10T156/1933 , Y10T156/1944 , Y10T156/1961 , Y10T156/1967
摘要： A processing apparatus of a stack is provided. The stack includes two substrates attached to each other with a gap provided between their end portions. The processing apparatus includes a fixing mechanism that fixes part of the stack, a plurality of adsorption jigs that fix an outer peripheral edge of one of the substrates of the stack, and a wedge-shaped jig that is inserted into a corner of the stack. The plurality of adsorption jigs include a mechanism that allows the adsorption jigs to move separately in a vertical direction and a horizontal direction. The processing apparatus further includes a sensor sensing a position of the gap between the end portion in the stack. A tip of the wedge-shaped jig moves along a chamfer formed on an end surface of the stack. The wedge-shaped jig is inserted into the gap between the end portions in the stack.
摘要翻译： 提供堆叠的处理装置。 堆叠包括彼此附接的两个基板，其间隙设置在它们的端部之间。 处理装置包括：固定机构，其固定堆叠的一部分;多个吸附夹具，其固定堆叠的一个基板的外周边缘;以及楔形夹具，其插入到堆叠的角部。 多个吸附夹具包括允许吸附夹具在垂直方向和水平方向上分开移动的机构。 处理装置还包括传感器，其感测堆叠中的端部之间的间隙的位置。 楔形夹具的尖端沿着形成在堆叠的端表面上的倒角移动。 楔形夹具插入到堆叠中的端部之间的间隙中。
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公开(公告)号：US20220216243A1
公开(公告)日：2022-07-07
申请号：US17701961
申请日：2022-03-23
发明人： Shunpei YAMAZAKI , Yasuharu HOSAKA , Satoru IDOJIRI , Kenichi OKAZAKI , Hiroki ADACHI , Daisuke KUBOTA
IPC分类号： H01L27/12 , H01L21/683 , H01L29/66 , H01L29/786
摘要： A peeling method at low cost with high mass productivity is provided. A resin layer having a thickness greater than or equal to 0.1 μm and less than or equal to 3 μm is formed over a formation substrate using a photosensitive and thermosetting material, a transistor including an oxide semiconductor in a channel formation region is formed over the resin layer, the resin layer is irradiated with light using a linear laser device, and the transistor and the formation substrate are separated from each other. A first region and a second region which is thinner than the first region or an opening can be formed in the resin layer. In the case of forming a conductive layer functioning as an external connection terminal or the like to overlap with the second region or the opening of the resin layer, the conductive layer is exposed.
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10.发明申请公开(公告)号：US20210090879A1
公开(公告)日：2021-03-25
申请号：US16332546
申请日：2017-09-29
IPC分类号： H01L21/02 , H01L21/304 , H01L21/306
摘要： A glass substrate is reused. The mass productivity of a semiconductor device is increased.
A glass substrate one surface of which includes a first material and a second material. The first material includes one or both of a metal and a metal oxide. The second material includes one or both of a resin and a decomposition product of a resin. A cleaning method of a glass substrate, which includes a step of preparing the glass substrate one surface of which includes a first material and a second material and a step of exposing the first material by removing at least part of the second material.
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