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公开(公告)号：US12041820B2
公开(公告)日：2024-07-16
申请号：US17273287
申请日：2018-09-06
发明人： Takao Saitoh , Masahiko Miwa , Yohsuke Kanzaki , Yi Sun , Masaki Yamanaka , Seiji Kaneko
IPC分类号： H10K59/121 , H10K71/00 , H10K59/12
CPC分类号： H10K59/1213 , H10K71/00 , H10K59/1201
摘要： In a method for manufacturing an active matrix substrate, forming of an underlayer inorganic insulating film includes applying a resist onto the underlayer inorganic insulating film, performing an ashing process of forming a surface having irregularities on a surface of the resist by a first ashing process, and, after the ashing process has been performed, roughening a surface of the underlayer inorganic insulating film by performing a second ashing process and an etching process on the underlayer inorganic insulating film. When forming a semiconductor film, a surface of at least a part of the semiconductor film is roughened following a rough surface of the underlayer inorganic insulating film.
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公开(公告)号：US11659746B2
公开(公告)日：2023-05-23
申请号：US16979453
申请日：2018-03-09
发明人： Takao Saitoh , Seiji Kaneko , Yohsuke Kanzaki , Masahiko Miwa , Masaki Yamanaka , Yi Sun
IPC分类号： H10K59/131 , H10K59/124 , H10K77/10 , H10K102/00
CPC分类号： H10K59/131 , H10K59/124 , H10K77/111 , H10K2102/311
摘要： A first wiring line and a second wiring line are extended to an upper face of a resin substrate exposed from a slit formed in at least one layer of an inorganic insulating film, a first flattening film is provided within the slit which exposes the upper face of the resin substrate between the portions to which the first wiring line and the second wiring line are extended, and the first wiring line and the second wiring line are electrically connected to each other via a third wiring line provided between an end face of the first flattening film and the upper face of the resin substrate.
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公开(公告)号：US11416108B2
公开(公告)日：2022-08-16
申请号：US17258442
申请日：2018-07-25
发明人： Masaki Yamanaka , Yi Sun , Masahiko Miwa , Takao Saitoh , Yohsuke Kanzaki , Seiji Kaneko
摘要： A display device includes a display area and a frame area surrounding the display area. The display device comprises a TFT layer, a light-emitting element layer, a sealing layer including a first inorganic sealing film, an organic sealing film, and a second inorganic sealing film, a bank coated with the first inorganic sealing film and the second inorganic sealing film, a touch panel function layer, and a plurality of touch panel wires running to intersect with the bank in planar view and connected to the touch panel function layer. The second inorganic sealing film includes a bank coating that coats an upper face of the bank, and a protrusion, in a clearance between neighboring two of the plurality of touch panel wires, protrudes from the bank coating toward the display area or away from the display area.
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公开(公告)号：US10510781B2
公开(公告)日：2019-12-17
申请号：US16078249
申请日：2017-02-21
发明人： Kazuatsu Ito , Seiji Kaneko , Yohsuke Kanzaki , Takao Saitoh , Makoto Nakazawa
IPC分类号： H01L27/12 , H01L29/417 , H01L29/423 , H01L29/51 , H01L29/786 , G02F1/1368
摘要： A method of producing a semiconductor device according to an embodiment of the present invention includes: step (C) of forming an oxide semiconductor layer of a plurality of thin film transistors on a gate dielectric layer; step (F) of forming an aperture in an interlevel dielectric layer, the aperture being located between an active region and a plurality of terminal portions and extending through the interlevel dielectric layer; and step (G) of, after step (F), forming an upper conductive portion on the interlevel dielectric layer. In step (C), a protection layer made of the same oxide semiconductor film as the oxide semiconductor layer is formed above a region of the gate dielectric layer that is located between the active region and the plurality of terminal portions. In step (F), the aperture is formed so as to overlap the protection layer.
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公开(公告)号：US10355040B2
公开(公告)日：2019-07-16
申请号：US15770742
申请日：2017-02-22
IPC分类号： H01L31/10 , H01L27/146 , H01L29/786 , H01L31/105
摘要： An off-leakage current of a photodiode is reduced in a photoelectric conversion device. A photoelectric conversion device (100) includes: an oxide semiconductor layer (5) provided on a substrate (1); a passivation film (6) and a planarizing film (7) which are stacked on the oxide semiconductor layer; and a photodiode (9) including a lower electrode (91), a photoelectric conversion layer (92), and an upper electrode (93). The lower electrode is connected to a source electrode (4) via a contact hole provided in the passivation film and the planarizing film. No photoelectric conversion layer is provided directly above the contact hole.
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6.发明授权公开(公告)号：US10012883B2
公开(公告)日：2018-07-03
申请号：US15117524
申请日：2015-02-02
发明人： Yohsuke Kanzaki , Seiji Kaneko , Takao Saitoh , Yutaka Takamaru , Keisuke Ide
IPC分类号： H01L21/318 , G02F1/1368 , H01L21/02 , G02F1/1362 , H01L29/66 , H01L29/786 , H01L27/12 , G02F1/1333 , H01L29/24 , G02F1/1343
CPC分类号： G02F1/1368 , G02F1/133345 , G02F1/136213 , G02F1/136227 , G02F2001/134372 , G02F2202/02 , H01L21/0217 , H01L21/02211 , H01L21/02274 , H01L27/1225 , H01L27/124 , H01L27/1248 , H01L27/1255 , H01L27/1262 , H01L29/24 , H01L29/66969 , H01L29/78606 , H01L29/7869 , H01L29/78696
摘要： A semiconductor device (100A) includes a substrate (11); a TFT (10A) supported on the substrate, the TFT including an oxide semiconductor layer (16); an organic insulating layer (24) covering the TFT; a lower layer electrode (32) on the organic insulating layer; a dielectric layer (34) on the lower layer electrode; an upper layer electrode on the dielectric layer; and an upper layer electrode (36) including a portion opposing the lower layer electrode via the dielectric layer. The dielectric layer is a silicon nitride film having a hydrogen content of 5.33×1021 atoms/cm3 or less.
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公开(公告)号：US20150049290A1
公开(公告)日：2015-02-19
申请号：US14390460
申请日：2013-03-15
发明人： Seiichi Uchida , Seiji Kaneko , Yasuyuki Ogawa , Yutaka Takamaru , Kohhei Tanaka , Mitsuhiro Murata , Akira Shibazaki , Ken Kuboki
IPC分类号： G02F1/1362
CPC分类号： G02F1/136286 , G02F1/134309
摘要： The TFT substrate (10) of this liquid crystal display device (100) includes: a TFT (11) which is provided for each pixel; an upper electrode (12) which is electrically connected to the TFT's drain electrode (11d); a lower electrode (13) which is arranged under the upper electrode; and a dielectric layer (14) which is arranged between the upper and lower electrodes. Its counter substrate (20) includes a counter electrode (21) which faces the upper electrode. The upper electrode has first and second regions (R1, R2) which have mutually different electrode structures, and a third region (R3) which electrically connects the first and second regions to the drain electrode. The third region of the upper electrode includes a symmetrical connecting portion (12c) that is a conductive film pattern, of which the shape is substantially symmetrical with respect to a virtual line (L1) that splits each pixel into two adjacent regions in a row direction.
摘要翻译： 该液晶显示装置（100）的TFT基板（10）具备：为每个像素设置的TFT（11） 与TFT的漏电极（11d）电连接的上电极（12）; 布置在所述上电极下方的下电极（13）; 以及布置在上电极和下电极之间的电介质层（14）。 其对置基板（20）包括面向上电极的对电极（21）。 上电极具有彼此不同的电极结构的第一和第二区域（R1，R2），以及将第一和第二区域电连接到漏电极的第三区域（R3）。 上电极的第三区域包括对称连接部分（12c），其是导电膜图案，其形状相对于将每个像素分成行方向的两个相邻区域的虚拟线（L1）基本对称 。
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公开(公告)号：US11699778B2
公开(公告)日：2023-07-11
申请号：US16981463
申请日：2018-03-16
发明人： Takao Saitoh , Yi Sun , Yohsuke Kanzaki , Masaki Yamanaka , Masahiko Miwa , Seiji Kaneko
CPC分类号： H01L33/56 , H01L33/0095 , H01L2933/005
摘要： A display device includes: an underlayer, a first insulating film contacting an upper face of the underlayer, a semiconductor layer, a second insulating film, a first metal layer, a first resin layer, a first electrode, and a second resin layer, in order from a lower layer, wherein at least one of the underlayer, the first resin layer, and the second resin layer is a thin film layer having a maximum film thickness in a display region provided with a light-emitting element being thicker than a maximum film thickness in a frame region surrounding the display region.
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公开(公告)号：US11508798B2
公开(公告)日：2022-11-22
申请号：US16980149
申请日：2018-03-12
发明人： Takao Saitoh , Seiji Kaneko , Yohsuke Kanzaki , Masahiko Miwa , Masaki Yamanaka , Yi Sun
摘要： In an organic electroluminescence (EL) display device, a display region and a first frame region are defined in a substantially circular shape or a substantially oval shape, and in a bending portion, an opening is formed in an inorganic layered film, and a frame flattening film is provided to fill the opening. An end portion of the opening on the display region side is formed along an arc of the first frame region on the bending portion side.
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公开(公告)号：US11508797B2
公开(公告)日：2022-11-22
申请号：US16969461
申请日：2018-02-22
发明人： Masaki Yamanaka , Masahiko Miwa , Yohsuke Kanzaki , Takao Saitoh , Yi Sun , Seiji Kaneko
摘要： A display device includes: a resin substrate; a TFT layer; a bending portion; at least one inorganic film forming the TFT layer; an interlayer insulating film forming the TFT layer; and a plurality of wires forming the TFT layer, wherein the at least one inorganic film and the interlayer insulating film include an opening disposed at the bending portion, the at least one inorganic film includes a plurality of island-shaped inorganic films remaining in the opening, each of the plurality of wires overlaps a corresponding island-shaped inorganic film among the plurality of island-shaped inorganic films, and the display device includes a metal layer in a form of islands disposed between each of the plurality of wires and the corresponding island-shaped inorganic film overlapping each of the plurality of wires, the metal layer being in contact with each of the plurality of wires.
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