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公开(公告)号：US10055286B2
公开(公告)日：2018-08-21
申请号：US15219380
申请日：2016-07-26
Applicant: SK hynix Inc.
Inventor： Jae Bum Kim
CPC classification number: G06F11/1068 , G06F3/0619 , G06F3/064 , G06F3/0679 , G06F11/1048 , G11C16/26 , G11C29/021 , G11C29/028 , G11C29/42 , G11C29/52 , G11C2029/0411 , H03M13/152 , H03M13/2906 , H03M13/2909 , H03M13/296 , H03M13/2963
Abstract: A data storage device includes a nonvolatile memory device including a target memory region; and a controller suitable for performing a read operation by reading a data chunk from the target memory region based on a read bias and performing an error correction operation for the data chunk, iterating the read operation according to a result of the error correction operation, and adjusting the read bias based on at least one read bias used in one or more previous read operations and at least one correction failure index corresponding to the at least one read bias.
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公开(公告)号：US09323594B2
公开(公告)日：2016-04-26
申请号：US14176831
申请日：2014-02-10
Applicant: SK hynix Inc.
Inventor： Jae Bum Kim , Sang Chul Lee
CPC classification number: G06F11/0727 , G06F11/0793
Abstract: A semiconductor device includes a memory device suitable for outputting health monitoring data including information on a threshold voltage distribution, and outputting read data read from memory cells included in the memory device, and a controller suitable for receiving a predetermined quantity of the read data from the memory device based on the health monitoring data, and performing a decoding operation for an error correction by using the received read data.
Abstract translation: 一种半导体器件包括：适于输出健康监测数据的存储器件，包括关于阈值电压分布的信息，以及输出从存储器件中包含的存储器单元中读出的读取数据;以及控制器，其适于接收来自 基于健康监视数据的存储装置，并且通过使用接收到的读取数据来执行用于纠错的解码操作。
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公开(公告)号：US09898363B2
公开(公告)日：2018-02-20
申请号：US15140251
申请日：2016-04-27
Applicant: SK hynix Inc.
Inventor： Jae Bum Kim , Hyung Min Lee
CPC classification number: G06F11/1068 , G06F11/1048 , G11C7/00 , G11C29/52
Abstract: A data storage device includes a first decoder suitable for performing first ECC decoding operation; a second decoder suitable for performing second ECC decoding operation; and a control unit suitable for controlling the first decoder to perform the first ECC decoding operation to data chunks read from a memory region respectively according to read voltage sets, and performing one of prioritization, reservation and omission of the second ECC decoding operation to a current data chunk when the first ECC decoding operation to the current data chunk fails.
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Patent Agency Ranking
公开(公告)号：US09412621B2
公开(公告)日：2016-08-09
申请号：US14955915
申请日：2015-12-01
Applicant: SK hynix Inc.
Inventor： Jae Bum Kim
IPC: H01L21/322 , H01L29/167 , H01L29/06 , H01L29/36 , H01L21/265 , H01L21/8238 , H01L21/02 , H01L21/3105
CPC classification number: H01L21/3221 , H01L21/02532 , H01L21/02598 , H01L21/26513 , H01L21/3105 , H01L21/823892 , H01L29/06 , H01L29/36
Abstract: A semiconductor device in which a gettering layer is formed in a semiconductor substrate, and a method for forming the same are disclosed, resulting in increased reliability of the semiconductor substrate including the gettering layer. The semiconductor device includes a semiconductor substrate; a gettering layer formed of a first-type impurity and a second-type impurity in the semiconductor substrate so as to perform gettering of metal ion; and a deep-well region formed over the gettering layer in the semiconductor substrate.
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公开(公告)号：US09024414B2
公开(公告)日：2015-05-05
申请号：US14218751
申请日：2014-03-18
Applicant: SK Hynix Inc.
Inventor： Jae Bum Kim
IPC: H01L29/167 , H01L21/332 , H01L29/06 , H01L29/36
CPC classification number: H01L21/3221 , H01L21/02532 , H01L21/02598 , H01L21/26513 , H01L21/3105 , H01L21/823892 , H01L29/06 , H01L29/36
Abstract: A semiconductor device in which a gettering layer is formed in a semiconductor substrate, and a method for forming the same are disclosed, resulting in increased reliability of the semiconductor substrate including the gettering layer. The semiconductor device includes a semiconductor substrate; a gettering layer formed of a first-type impurity and a second-type impurity in the semiconductor substrate so as to perform gettering of metal ion; and a deep-well region formed over the gettering layer in the semiconductor substrate.
Abstract translation: 公开了一种其中在半导体衬底中形成吸气层的半导体器件及其形成方法，导致包括吸杂层的半导体衬底的可靠性增加。 半导体器件包括半导体衬底; 在半导体衬底中由第一种杂质和第二类杂质形成的吸杂层，以便吸收金属离子; 以及形成在半导体衬底中的吸杂层上的深阱区域。
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公开(公告)号：US09275897B2
公开(公告)日：2016-03-01
申请号：US14326432
申请日：2014-07-08
Applicant: SK HYNIX INC.
Inventor： Jae Bum Kim
IPC: H01L21/425 , H01L21/768 , H01L23/48 , H01L21/48 , H01L21/265
CPC classification number: H01L21/76825 , H01L21/26533 , H01L21/486 , H01L21/76898 , H01L23/481 , H01L2224/0401 , H01L2224/0557 , H01L2224/06181 , H01L2224/13023 , H01L2924/00014 , H01L2224/05552
Abstract: An exemplary semiconductor device comprises a through silicon via penetrating a semiconductor substrate including a circuit pattern on one side of the substrate, a first doped layer formed in the other side, and a bump connected with the through silicon via.
Abstract translation: 一种示例性的半导体器件包括穿透包括在衬底的一侧上的电路图案的半导体衬底的通孔硅，在另一侧形成的第一掺杂层和与通过硅通孔连接的凸块。
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公开(公告)号：US09231065B2
公开(公告)日：2016-01-05
申请号：US14677923
申请日：2015-04-02
Applicant: SK hynix Inc.
Inventor： Jae Bum Kim
IPC: H01L29/227 , H01L21/322 , H01L29/36 , H01L29/06 , H01L21/265 , H01L21/8238
CPC classification number: H01L21/3221 , H01L21/02532 , H01L21/02598 , H01L21/26513 , H01L21/3105 , H01L21/823892 , H01L29/06 , H01L29/36
Abstract: A semiconductor device in which a gettering layer is formed in a semiconductor substrate, and a method for forming the same are disclosed, resulting in increased reliability of the semiconductor substrate including the gettering layer. The semiconductor device includes a semiconductor substrate; a gettering layer formed of a first-type impurity and a second-type impurity in the semiconductor substrate so as to perform gettering of metal ion; and a deep-well region formed over the gettering layer in the semiconductor substrate.
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公开(公告)号：US08810010B2
公开(公告)日：2014-08-19
申请号：US13719099
申请日：2012-12-18
Applicant: SK hynix Inc.
Inventor： Jae Bum Kim
CPC classification number: H01L21/76825 , H01L21/26533 , H01L21/486 , H01L21/76898 , H01L23/481 , H01L2224/0401 , H01L2224/0557 , H01L2224/06181 , H01L2224/13023 , H01L2924/00014 , H01L2224/05552
Abstract: An exemplary semiconductor device comprises a through silicon via penetrating a semiconductor substrate including a circuit pattern on one side of the substrate, a first doped layer formed in the other side, and a bump connected with the through silicon via.
Abstract translation: 一种示例性的半导体器件包括穿透包括在衬底的一侧上的电路图案的半导体衬底的通孔硅，在另一侧形成的第一掺杂层和与通过硅通孔连接的凸块。
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