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    POWER SAVING TECHNIQUES THAT USE A LOWER BOUND ON BIT ERRORS
    3.
    发明申请
    POWER SAVING TECHNIQUES THAT USE A LOWER BOUND ON BIT ERRORS 有权
    在BIT错误上使用较低限制的节电技术

    公开(公告)号：US20140013166A1

    公开(公告)日：2014-01-09

    申请号：US13902410

    申请日：2013-05-24

    Applicant: SK HYNIX MEMORY SOLUTIONS INC.

    Inventor： Arunkumar Subramanian ,  Frederick K.H. Lee ,  Jason Bellorado ,  Xiangyu Tang ,  Lingqi Zeng

    IPC: G06F1/32

    CPC classification number: G06F1/3206 ,  G06F1/32 ,  G06F1/3225 ,  G06F1/3234 ,  G06F1/3275 ,  G06F1/3287 ,  G11C7/00 ,  Y02D10/13 ,  Y02D10/14

    Abstract: A read back bit sequence and charge constraint information are obtained. A lower bound on a number of bit errors associated with the read back bit sequence is determined based at least in part on the read back bit sequence and the charge constraint information. The lower bound and an error correction capability threshold associated with an error correction decoder are compared. In the event the lower bound is greater than or equal to the error correction capability threshold, an error correction decoding failure is predicted and in response to the prediction a component is configured to save power.

    Abstract translation: 获得回读比特序列和电荷约束信息。 至少部分地基于回读比特序列和电荷约束信息来确定与回读比特序列相关联的多个比特错误的下限。 比较与纠错解码器相关联的下限和纠错能力阈值。 在下限大于或等于纠错能力阈值的情况下，预测出纠错解码失败，并且响应于该预测，将部件配置为节省功率。

    Method and system for generating soft-information after a single read in NAND flash using expected and measured values
    5.
    发明授权
    Method and system for generating soft-information after a single read in NAND flash using expected and measured values 有权
    在NAND闪存中使用预期和测量值进行单次读取后生成软信息的方法和系统

    公开(公告)号：US09256522B1

    公开(公告)日：2016-02-09

    申请号：US13858781

    申请日：2013-04-08

    Applicant: SK hynix memory solutions inc.

    Inventor： Xiangyu Tang ,  Lingqi Zeng ,  Jason Bellorado ,  Frederick K. H. Lee ,  Arunkumar Subramanian

    IPC: G06F12/02 ,  G06F11/10 ,  G06F11/00 ,  G11C16/34 ,  G11C16/26 ,  G06F12/00

    CPC classification number: G06F12/00 ,  G06F11/008 ,  G06F11/1012 ,  G06F11/1072 ,  G06F12/0246 ,  G06F2212/1032 ,  G06F2212/2022 ,  G11C16/26 ,  G11C16/34

    Abstract: A system and method for determining soft read data for a group of cells in a nonvolatile flash memory are disclosed. An expected value representative of a plurality of stored values in a group of cells is obtained. A measured value representative of the plurality of stored values in the group of cells is obtained, based on a single read to the group of cells. A soft read data for the group of cells is determined based at least in part on the expected value and the measured value. The expected and measured values may include at least one of a number of 0s, a number of 1s, a ratio of 0s to 1s or a ratio of 1s to 0s. A reliability for a bit i may be obtained using a one-step majority logic decoder, and a threshold reliability may be used when determining the soft read data.

    Abstract translation: 公开了一种用于确定非易失性闪速存储器中的一组单元的软读取数据的系统和方法。 获得代表一组单元格中的多个存储值的期望值。 基于对单元格组的单次读取，获得表示该组单元格中的多个存储值的测量值。 至少部分地基于期望值和测量值确定该组单元的软读取数据。 期望值和测量值可以包括数量为0，数量1s，0s至1s的比率或1s至0s的比率中的至少一个。 使用一步多数逻辑解码器可以获得一位i的可靠性，并且当确定软读取数据时可以使用阈值可靠性。

    STORAGE OF READ THRESHOLDS FOR NAND FLASH STORAGE USING LINEAR APPROXIMATION
    6.
    发明申请
    STORAGE OF READ THRESHOLDS FOR NAND FLASH STORAGE USING LINEAR APPROXIMATION 审中-公开
    存储使用线性近似的NAND闪存存储读取阈值

    公开(公告)号：US20150085572A1

    公开(公告)日：2015-03-26

    申请号：US14553745

    申请日：2014-11-25

    Applicant: SK hynix memory solutions inc.

    Inventor： Arunkumar Subramanian ,  Xiangyu Tang ,  Jason Bellorado ,  Lingqi Zeng ,  Frederick K.H. Lee

    IPC: G11C16/26

    CPC classification number: G11C16/26 ,  G11C11/5642 ,  G11C16/3404 ,  G11C16/349

    Abstract: A first read threshold associated with a first page in a block and a second read threshold associated with a second page in the block are received, where the first page has a first page number and the second page has a second page number. A slope and a y intercept are determined based at least in part on the first read threshold, the second read threshold, the first page number, and the second page number. The slope and the y intercept are stored with a block identifier associated with the block.

    Abstract translation: 接收与块中的第一页相关联的第一读取阈值和与块中的第二页相关联的第二读取阈值，其中第一页面具有第一页面编号，并且第二页面具有第二页面编号。 至少部分地基于第一读取阈值，第二读取阈值，第一页面编号和第二页面数量来确定斜率和y截距。 斜率和y截距用与块相关联的块标识符存储。

    Storage of read thresholds for NAND flash storage using linear approximation
    7.
    发明授权
    Storage of read thresholds for NAND flash storage using linear approximation 有权
    使用线性近似来存储NAND闪存的读取阈值

    公开(公告)号：US08923066B1

    公开(公告)日：2014-12-30

    申请号：US13852934

    申请日：2013-03-28

    Applicant: SK hynix memory solutions inc.

    Inventor： Arunkumar Subramanian ,  Xiangyu Tang ,  Jason Bellorado ,  Lingqi Zeng ,  Frederick K. H. Lee

    IPC: G11C16/26 ,  G11C29/00

    CPC classification number: G11C16/26 ,  G11C11/5642 ,  G11C16/3404 ,  G11C16/349

    Abstract: A first read threshold associated with a first page in a block and a second read threshold associated with a second page in the block are received, where the first page has a first page number and the second page has a second page number. A slope and a y intercept are determined based at least in part on the first read threshold, the second read threshold, the first page number, and the second page number. The slope and the y intercept are stored with a block identifier associated with the block.

    Abstract translation: 接收与块中的第一页相关联的第一读取阈值和与块中的第二页相关联的第二读取阈值，其中第一页面具有第一页面编号，并且第二页面具有第二页面编号。 至少部分地基于第一读取阈值，第二读取阈值，第一页面编号和第二页面数量来确定斜率和y截距。 斜率和y截距用与块相关联的块标识符存储。

    Generating read thresholds using gradient descent and without side information
    8.
    发明授权
    Generating read thresholds using gradient descent and without side information 有权
    使用梯度下降和无旁边信息生成读取阈值

    公开(公告)号：US08923062B1

    公开(公告)日：2014-12-30

    申请号：US13935714

    申请日：2013-07-05

    Applicant: SK hynix memory solutions inc.

    Inventor： Frederick K. H. Lee ,  Jason Bellorado ,  Arunkumar Subramanian ,  Lingqi Zeng ,  Xiangyu Tang ,  Ameen Aslam

    IPC: G11C11/34 ,  G11C16/06

    CPC classification number: G11C16/26 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/06 ,  G11C16/10 ,  G11C16/3404

    Abstract: A next read threshold is determined by determining a first number of solid state storage cells having a stored voltage which falls into a first voltage range and determining a second number of solid state storage cells having a stored voltage which falls into a second voltage range. A gradient is determine by taking a difference between the first number of solid state storage cells and the second number of solid state storage cells. The next read threshold is determined based at least in part on the gradient.

    Abstract translation: 通过确定具有落入第一电压范围的存储电压的第一数量的固态存储单元并且确定具有落入第二电压范围的存储电压的第二数量的固态存储单元来确定下一个读取阈值。 通过取第一数量的固态存储单元和第二数量的固态存储单元之间的差来确定梯度。 至少部分地基于梯度来确定下一个读取阈值。

    METHODS OF SYSTEM OPTIMIZATION BY OVER-SAMPLING READ
    9.
    发明申请
    METHODS OF SYSTEM OPTIMIZATION BY OVER-SAMPLING READ 审中-公开
    通过超采样读取系统优化的方法

    公开(公告)号：US20160210124A1

    公开(公告)日：2016-07-21

    申请号：US15000614

    申请日：2016-01-19

    Applicant: SK hynix memory solutions inc.

    Inventor： Gong Luo ,  Fan Zhang ,  Xiangyu Tang

    IPC: G06F9/44

    CPC classification number: G06F8/4434 ,  G06F3/0619 ,  G06F12/0246

    Abstract: Methods for programming word lines in a block include identifying the block to be programmed, opening the block for programming, and programming a first word line in the block and a second word line in the block. The first word line and the second word line are separated by a number of word lines that are skipped during programming, and the number of word lines that are skipped being based on a predetermined interval.

    Abstract translation: 用于在块中编程字线的方法包括识别要编程的块，打开用于编程的块，以及编程块中的第一字线和块中的第二字线。 第一字线和第二字线由编程期间跳过的多个字线分隔开，并且基于预定间隔跳过的字线的数量。

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