公开(公告)号：US20160240727A1

公开(公告)日：2016-08-18

申请号：US15140300

申请日：2016-04-27

申请人： SOKO KAGAKU CO., LTD.

发明人： CYRIL PERNOT ,  AKIRA HIRANO

IPC分类号： H01L33/00 ,  H01L33/12 ,  H01L33/06 ,  H01L33/18

CPC分类号： H01L33/007 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/06 ,  H01L33/12 ,  H01L33/16 ,  H01L33/18 ,  H01L33/24 ,  H01L33/32 ,  H01L33/38

摘要： A nitride semiconductor ultraviolet light-emitting element is provided with: an underlying structure portion including a sapphire (0001) substrate and an AlN layer formed on the substrate; and a light-emitting element structure portion including an n-type cladding layer of an n-type AlGaN based semiconductor layer, an active layer having an AlGaN based semiconductor layer, and a p-type cladding layer of a p-type AlGaN based semiconductor layer, formed on the underlying structure portion. The (0001) surface of the substrate is inclined at an off angle which is equal to or greater than 0.6° and is equal to or smaller than 3.0°, and an AlN molar fraction of the n-type cladding layer is equal to or higher than 50%.

摘要翻译： 氮化物半导体紫外线发光元件设置有：底层结构部分，包括蓝宝石（0001）基板和形成在基板上的AlN层; 以及包括n型AlGaN基半导体层的n型包覆层，具有AlGaN基半导体层的有源层和p型AlGaN系半导体的p型包层的发光元件结构部分 层，形成在下面的结构部分上。 衬底的（0001）表面以等于或大于0.6°并且等于或小于3.0°的偏角倾斜，并且n型包覆层的AlN摩尔分数等于或等于 超过50％。

公开(公告)号：US20160265138A1

公开(公告)日：2016-09-15

申请号：US14765884

申请日：2014-08-29

申请人： SOKO KAGAKU CO., LTD.

发明人： CYRIL PERNOT ,  AKIRA HIRANO

IPC分类号： C30B25/18 ,  C30B31/08 ,  H01L33/06 ,  H01S5/323 ,  H01L33/14 ,  H01L33/32 ,  H01L33/00 ,  H01S5/02 ,  C30B29/40 ,  H01L33/12

CPC分类号： C30B25/183 ,  C30B29/38 ,  C30B29/406 ,  C30B31/08 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02614 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/20 ,  H01L21/205 ,  H01L33/007 ,  H01L33/06 ,  H01L33/12 ,  H01L33/145 ,  H01L33/32 ,  H01S5/0213 ,  H01S5/32341 ,  H01S2301/173 ,  H01S2304/04

摘要： The present invention provides a method for producing a template for epitaxial growth, the method including: a surface treatment step of dispersing Ga atoms on a surface of a sapphire substrate; and an AlN growth step of epitaxially growing an AlN layer on the sapphire substrate, wherein in a Ga concentration distribution in a depth direction perpendicular to the surface of the sapphire substrate in an internal region of the AlN layer excluding a near-surface region up to a depth of 100 nm from the surface of the AlN layer, which is obtained by secondary ion mass spectrometry, a position in the depth direction where the Ga concentration takes the maximum value is present in a near-interface region located between the interface of the sapphire substrate and a position at 400 nm spaced apart from the interface to the AlN layer side, and the maximum value of the Ga concentration is 3×1017 atoms/cm3 or more and 2×1020 atoms/cm3 or less.

摘要翻译： 本发明提供一种外延生长用模板的制造方法，其特征在于，包括：在蓝宝石基板的表面分散Ga原子的表面处理工序; 以及在蓝宝石衬底上外延生长AlN层的AlN生长步骤，其中在AlN层的内部区域中垂直于蓝宝石衬底的表面的深度方向的Ga浓度分布，除了近表面区域 通过二次离子质谱法获得的AlN层的表面的深度为100nm，Ga浓度达到最大值的深度方向的位置存在于位于 蓝宝石衬底和与AlN层侧的界面间隔开的400nm的位置，Ga浓度的最大值为3×10 17原子/ cm 3以上且2×10 20原子/ cm 3以下。