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1.发明申请公开(公告)号：US20170243767A1
公开(公告)日：2017-08-24
申请号：US15398681
申请日：2017-01-04
Applicant: Solexel, Inc.
Inventor： Takao Yonehara , Subramanian Tamilmani , Karl-Josef Kramer , Jay Ashjaee , Mehrdad M. Moslehi , Yasuyoshi Miyaji , Noriyuki Hayashi , Takamitsu Inahara
IPC: H01L21/67 , H01L21/687 , H01L21/02 , H01L21/677 , C25F3/12 , C25F7/02
CPC classification number: H01L21/67086 , C25D11/005 , C25D11/32 , C25F3/12 , C25F7/02 , H01L21/0203 , H01L21/67781 , H01L21/68721 , H01L21/68771 , H01L21/68785 , H01L31/1804 , Y02E10/547 , Y02P70/521
Abstract: This disclosure enables high-productivity fabrication of porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.
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2.发明申请公开(公告)号：US20160186358A1
公开(公告)日：2016-06-30
申请号：US14792412
申请日：2015-07-06
Applicant: Solexel, Inc.
Inventor： Takao Yonehara , Subramanian Tamilmani , Karl-Josef Kramer , Jay Ashjaee , Mehrdad M. Moslehi , Yasuyoshi Miyaji , Noriyuki Hayashi , Takamitsu Inahara
IPC: C25F7/02 , H01L21/687 , C25F3/12 , H01L21/67
CPC classification number: C25D11/005 , C25D11/32 , C25F3/12 , C25F7/02 , H01L21/0203 , H01L21/67086 , H01L21/67781 , H01L21/68721 , H01L21/68771 , H01L21/68785 , H01L31/1804 , Y02E10/547 , Y02P70/521
Abstract: This disclosure enables high-productivity fabrication of porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.
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3.发明授权High productivity spray processing for the metallization of semiconductor workpieces 有权用于半导体工件金属化的高生产率喷雾处理公开(公告)号：US09337374B2
公开(公告)日：2016-05-10
申请号：US13726169
申请日：2012-12-23
Applicant: SOLEXEL, INC.
Inventor： Karl-Josef Kramer , Jay Ashjaee , Mehrdad M. Moslehi , Anthony Calcaterra , David Dutton , Pawan Kapur , Sean Seutter , Homi Fatemi
CPC classification number: H01L31/18 , C23C4/01 , C23C4/12 , H01L31/0516 , H01L31/188 , Y02E10/50
Abstract: Processing equipment for the metallization of a plurality of semiconductor workpieces. A controlled atmospheric non-oxidizing gas region comprises at least two enclosed deposition zones, the controlled atmospheric non-oxidizing gas region is isolated from external oxidizing ambient. A temperature controller adjusts the temperature of the semiconductor workpiece in each of the at least two enclosed deposition zones. Each of the enclosed deposition zones comprising at least one spray gun for the metallization of the semiconductor workpiece. A transport system moves the semiconductor workpiece through the controlled atmospheric non-oxidizing gas region. A batch carrier plate carries the semiconductor workpiece through the controlled atmospheric non-oxidizing gas region. The controlled atmospheric non-oxidizing gas region further comprises a gas-based pre-cleaning zone.
Abstract translation: 用于多个半导体工件的金属化的加工设备。 受控的大气非氧化性气体区域包括至少两个封闭的沉积区域，受控的大气非氧化性气体区域与外部氧化环境隔离。 温度控制器在所述至少两个封闭的沉积区域中的每一个中调节半导体工件的温度。 每个封闭的沉积区域包括用于半导体工件的金属化的至少一个喷枪。 运输系统使半导体工件移动通过受控的大气非氧化气体区域。 批量载体板通过受控的大气非氧化气体区域运送半导体工件。 受控的大气非氧化性气体区域还包括基于气体的预清洁区域。
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Patent Agency Ranking
公开(公告)号：US20150207002A1
公开(公告)日：2015-07-23
申请号：US14475566
申请日：2014-09-02
Applicant: Solexel, Inc.
Inventor： Mehrdad M. Moslehi , Thom Stalcup , Michael Wingert , Jay Ashjaee , Pawan Kapur , Homi Fatemi
IPC: H01L31/0465 , H01L31/02 , H01L31/0236 , H01L31/0224
CPC classification number: H01L31/0465 , H01L31/02245 , H01L31/0516 , H01L31/0682 , Y02E10/547
Abstract: Solar cell array solutions including monolithic solar cell arrays and fabrication methods. A first patterned cell metallization contacts base and emitter regions of each of a plurality of solar cells having a light receiving frontside and a backside. An electrically insulating continuous backplane layer is attached to the backside of the solar cells and covers the first cell metallization of each of the solar cells. Via holes through the continuous backplane layer provide access to the first cell metallization. A second cell metallization is connected to the first cell metallization of each of the solar cells and electrically interconnects the solar cells in the array.
Abstract translation: 太阳能电池阵列解决方案，包括单片太阳能电池阵列和制造方法。 第一图案化电池金属化接触具有光接收前侧和后侧的多个太阳能电池中的每一个的基极和发射极区域。 电绝缘的连续背板层连接到太阳能电池的背面并且覆盖每个太阳能电池的第一电池金属化。 穿过连续背板层的通孔提供对第一电池金属化的访问。 第二电池金属化连接到每个太阳能电池的第一电池金属化，并将阵列中的太阳能电池电互连。
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5.发明申请APPARATUS AND METHODS FOR UNIFORMLY FORMING POROUS SEMICONDUCTOR ON A SUBSTRATE 有权在基板上均匀形成多孔半导体的装置和方法公开(公告)号：US20150159292A1
公开(公告)日：2015-06-11
申请号：US14563888
申请日：2014-12-08
Applicant: Solexel, Inc.
Inventor： Karl-Josef Kramer , Mehrdad M. Moslehi , Subramanian Tamilmani , George D. Kamian , Jay Ashjaee , Takao Yonehara
CPC classification number: C25D11/005 , C25D7/12 , C25D11/022 , C25D11/024 , C25D11/32 , C25D17/001 , C25D17/008 , C25D17/08 , C25D21/04 , C25F7/00
Abstract: This disclosure enables high-productivity controlled fabrication of uniform porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.
Abstract translation: 本公开使得能够高生产率控制制造均匀的多孔半导体层（由单层或多层多孔半导体（例如多孔硅，包括单孔隙或多孔层）制成）。 一些应用包括制造用于脱模和MEMS器件制造，膜形成和浅沟槽隔离（STI）多孔硅的MEMS分离和牺牲层（使用具有最佳孔隙率的多孔硅形成及其随后的氧化）。 此外，本公开适用于光伏技术的MEMS领域，包括传感器和执行器，独立的或与集成半导体微电子，半导体微电子芯片和光电子集成。
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6.发明申请HIGH PRODUCTIVITY SPRAY PROCESSING FOR SEMICONDUCTOR METALLIZATION AND INTERCONNECTS 有权用于半导体金属化和互连的高生产率喷涂处理公开(公告)号：US20140033971A1
公开(公告)日：2014-02-06
申请号：US13726169
申请日：2012-12-23
Applicant: SOLEXEL, INC.
Inventor： Karl-Josef Kramer , Jay Ashjaee , Mehrdad M. Moslehi , Anthony Calcaterra , David Dutton , Pawan Kapur , Sean Seutter , Homi Fatemi
IPC: H01L31/18
CPC classification number: H01L31/18 , C23C4/01 , C23C4/12 , H01L31/0516 , H01L31/188 , Y02E10/50
Abstract: Processing equipment for the metallization of a plurality of workpieces are provided. The equipment comprising a controlled atmospheric region isolated from external oxidizing ambient with at least one deposition zone for the application of a metal layer on a workpiece. A transport system moves the workpiece positioned in a batch carrier plate through the controlled atmospheric region.
Abstract translation: 提供了用于多个工件的金属化的加工设备。 所述设备包括与外部氧化环境隔离的受控大气区域和至少一个用于在工件上施加金属层的沉积区域。 运输系统将位于批量运载板中的工件移动通过受控的大气区域。
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公开(公告)号：US20130213469A1
公开(公告)日：2013-08-22
申请号：US13855657
申请日：2013-04-02
Applicant: Solexel, Inc.
Inventor： Karl-Josef Kramer , Mehrdad M. Moslehi , Pawan Kapur , Virendra V. Rana , David Dutton , Sean M. Seutter , Anthony Calcaterra , Jay Ashjaee , Takao Yonehara
IPC: H01L31/0224
CPC classification number: H01L31/022458 , H01L31/022441 , H01L31/0516 , H01L31/0682 , Y02E10/547
Abstract: Fabrication methods and structures relating to multi-level metallization for solar cells as well as fabrication methods and structures for forming back contact solar cells are provided.
Abstract translation: 提供了与太阳能电池的多层金属化相关的制造方法和结构以及用于形成背接触太阳能电池的制造方法和结构。
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公开(公告)号：US20140146854A1
公开(公告)日：2014-05-29
申请号：US13866990
申请日：2013-04-19
Applicant: Solexel, Inc.
Inventor： Jay Ashjaee , Karl-Josef Kramer , Mehrdad M. Moslehi
IPC: G01K7/02
CPC classification number: G01K7/02 , H01L21/02532 , H01L21/0262 , H01L21/67098 , H01L21/67248
Abstract: Non-contact and non-invasive temperature measurement structures and methods for thermal processing systems which neither damage nor contaminate the thermal processing environment are provided.
Abstract translation: 提供了不损坏或污染热处理环境的热处理系统的非接触和非侵入性温度测量结构和方法。
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