公开(公告)号：US09214353B2

公开(公告)日：2015-12-15

申请号：US13778047

申请日：2013-02-26

Applicant: Solexel, Inc.

Inventor： Takao Yonehara ,  Virenda V. Rana ,  Sean Seutter ,  Mehrdad M. Moslehi ,  Subramanian Tamilmani

IPC: H01L21/762 ,  H01L21/304 ,  H01L21/268 ,  H01L31/18 ,  B23K26/00 ,  B23K26/06 ,  B23K26/08 ,  B23K26/30 ,  H01L33/00 ,  H01L25/065

CPC classification number: H01L21/7813 ,  B23K26/0006 ,  B23K26/0093 ,  B23K26/0622 ,  B23K26/082 ,  B23K26/0869 ,  B23K26/244 ,  B23K26/50 ,  B23K26/53 ,  B23K26/702 ,  B23K2101/40 ,  B23K2103/52 ,  B42D25/00 ,  B81C1/0038 ,  B81C1/0088 ,  B81C2201/0192 ,  B81C2201/0194 ,  H01L21/268 ,  H01L21/304 ,  H01L21/76254 ,  H01L21/76259 ,  H01L25/0657 ,  H01L31/022441 ,  H01L31/0682 ,  H01L31/1892 ,  H01L33/0079 ,  H01L33/0095 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48247 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/13091 ,  H01L2924/1461 ,  Y02E10/547 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: Methods and systems are provided for the split and separation of a layer of desired thickness of crystalline semiconductor material containing optical, photovoltaic, electronic, micro-electro-mechanical system (MEMS), or optoelectronic devices, from a thicker donor wafer using laser irradiation.

Abstract translation: 提供的方法和系统用于使用激光照射从较厚的施主晶片分离和分离含有光学，光电，电子，微电子机械系统（MEMS）或光电子器件的期望厚度的结晶半导体材料的层。

公开(公告)号：US20140033971A1

公开(公告)日：2014-02-06

申请号：US13726169

申请日：2012-12-23

Applicant: SOLEXEL, INC.

Inventor： Karl-Josef Kramer ,  Jay Ashjaee ,  Mehrdad M. Moslehi ,  Anthony Calcaterra ,  David Dutton ,  Pawan Kapur ,  Sean Seutter ,  Homi Fatemi

IPC: H01L31/18

CPC classification number: H01L31/18 ,  C23C4/01 ,  C23C4/12 ,  H01L31/0516 ,  H01L31/188 ,  Y02E10/50

Abstract: Processing equipment for the metallization of a plurality of workpieces are provided. The equipment comprising a controlled atmospheric region isolated from external oxidizing ambient with at least one deposition zone for the application of a metal layer on a workpiece. A transport system moves the workpiece positioned in a batch carrier plate through the controlled atmospheric region.

Abstract translation: 提供了用于多个工件的金属化的加工设备。 所述设备包括与外部氧化环境隔离的受控大气区域和至少一个用于在工件上施加金属层的沉积区域。 运输系统将位于批量运载板中的工件移动通过受控的大气区域。

公开(公告)号：US09337374B2

公开(公告)日：2016-05-10

申请号：US13726169

申请日：2012-12-23

Applicant: SOLEXEL, INC.

Inventor： Karl-Josef Kramer ,  Jay Ashjaee ,  Mehrdad M. Moslehi ,  Anthony Calcaterra ,  David Dutton ,  Pawan Kapur ,  Sean Seutter ,  Homi Fatemi

IPC: B05C11/00 ,  H01L31/18 ,  H01L31/05 ,  C23C4/00 ,  C23C4/12

CPC classification number: H01L31/18 ,  C23C4/01 ,  C23C4/12 ,  H01L31/0516 ,  H01L31/188 ,  Y02E10/50

Abstract: Processing equipment for the metallization of a plurality of semiconductor workpieces. A controlled atmospheric non-oxidizing gas region comprises at least two enclosed deposition zones, the controlled atmospheric non-oxidizing gas region is isolated from external oxidizing ambient. A temperature controller adjusts the temperature of the semiconductor workpiece in each of the at least two enclosed deposition zones. Each of the enclosed deposition zones comprising at least one spray gun for the metallization of the semiconductor workpiece. A transport system moves the semiconductor workpiece through the controlled atmospheric non-oxidizing gas region. A batch carrier plate carries the semiconductor workpiece through the controlled atmospheric non-oxidizing gas region. The controlled atmospheric non-oxidizing gas region further comprises a gas-based pre-cleaning zone.

Abstract translation: 用于多个半导体工件的金属化的加工设备。 受控的大气非氧化性气体区域包括至少两个封闭的沉积区域，受控的大气非氧化性气体区域与外部氧化环境隔离。 温度控制器在所述至少两个封闭的沉积区域中的每一个中调节半导体工件的温度。 每个封闭的沉积区域包括用于半导体工件的金属化的至少一个喷枪。 运输系统使半导体工件移动通过受控的大气非氧化气体区域。 批量载体板通过受控的大气非氧化气体区域运送半导体工件。 受控的大气非氧化性气体区域还包括基于气体的预清洁区域。

公开(公告)号：US20140038392A1

公开(公告)日：2014-02-06

申请号：US13778047

申请日：2013-02-26

Applicant: Solexel, Inc.

Inventor： Takao Yonehara ,  Virenda V. Rana ,  Sean Seutter ,  Mehrdad M. Moslehi ,  Subramanian Tamilmani

IPC: H01L21/304

CPC classification number: H01L21/7813 ,  B23K26/0006 ,  B23K26/0093 ,  B23K26/0622 ,  B23K26/082 ,  B23K26/0869 ,  B23K26/244 ,  B23K26/50 ,  B23K26/53 ,  B23K26/702 ,  B23K2101/40 ,  B23K2103/52 ,  B42D25/00 ,  B81C1/0038 ,  B81C1/0088 ,  B81C2201/0192 ,  B81C2201/0194 ,  H01L21/268 ,  H01L21/304 ,  H01L21/76254 ,  H01L21/76259 ,  H01L25/0657 ,  H01L31/022441 ,  H01L31/0682 ,  H01L31/1892 ,  H01L33/0079 ,  H01L33/0095 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48247 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/13091 ,  H01L2924/1461 ,  Y02E10/547 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: Methods and systems are provided for the split and separation of a layer of desired thickness of crystalline semiconductor material containing optical, photovoltaic, electronic, micro-electro-mechanical system (MEMS), or optoelectronic devices, from a thicker donor wafer using laser irradiation.

Abstract translation: 提供的方法和系统用于使用激光照射从较厚的施主晶片分离和分离含有光学，光电，电子，微电子机械系统（MEMS）或光电子器件的期望厚度的结晶半导体材料的层。