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    POROUS SILICON ELECTRO-ETCHING SYSTEM AND METHOD
    1.
    发明申请
    POROUS SILICON ELECTRO-ETCHING SYSTEM AND METHOD 审中-公开
    多孔硅电蚀刻系统及方法

    公开(公告)号：US20150299892A1

    公开(公告)日：2015-10-22

    申请号：US14589847

    申请日：2015-01-05

    Applicant: Solexel, Inc.

    Inventor： Mehrdad M. Moslehi ,  Doug Crafts ,  Subramanian Tamilmani ,  Karl-Josef Kramer ,  George D. Kamian ,  Somnath Nag

    IPC: C25F3/12 ,  H01L31/18 ,  C25F7/00

    CPC classification number: C25F3/12 ,  C25D11/32 ,  C25F7/00 ,  H01L21/67005 ,  H01L21/67075 ,  H01L21/67086 ,  H01L21/6776 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    Abstract: It is an object of this disclosure to provide high productivity, low cost-of-ownership manufacturing equipment for the high volume production of photovoltaic (PV) solar cell device architecture. It is a further object of this disclosure to reduce material processing steps and material cost compared to existing technologies by using gas-phase source silicon. The present disclosure teaches the fabrication of a sacrificial substrate base layer that is compatible with a gas-phase substrate growth process. Porous silicon is used as the sacrificial layer in the present disclosure. Further, the present disclosure provides equipment to produce a sacrificial porous silicon PV cell-substrate base layer.

    Abstract translation: 本发明的一个目的是提供高生产率，低成本的制造设备用于大量生产光伏（PV）太阳能电池器件结构。 本公开的另一个目的是通过使用气相源硅与现有技术相比减少材料加工步骤和材料成本。 本公开教导了制造与气相衬底生长工艺相容的牺牲衬底基底层。 在本公开中使用多孔硅作为牺牲层。 此外，本公开提供了制造牺牲多孔硅PV电池 - 衬底基底层的设备。

    METHODS FOR LIQUID TRANSER COATING OF THREE-DIMENSIONAL SUBSTRATES
    3.
    发明申请
    METHODS FOR LIQUID TRANSER COATING OF THREE-DIMENSIONAL SUBSTRATES 有权
    三维基质液体交联涂层方法

    公开(公告)号：US20140127834A1

    公开(公告)日：2014-05-08

    申请号：US13942150

    申请日：2013-07-15

    Applicant: Solexel, Inc.

    Inventor： David Xuan-Qi Wang ,  Mehrdad M. Moslehi ,  Somnath Nag

    IPC: H01L21/66 ,  H01L21/02

    CPC classification number: B01D1/22 ,  H01L21/02617 ,  H01L21/6715 ,  H01L22/12 ,  H01L31/035281 ,  H01L31/046 ,  H01L31/1872 ,  H01L31/1892 ,  H01L31/202 ,  H05K1/0284 ,  H05K3/046 ,  H05K3/1258 ,  H05K3/207 ,  H05K2201/09036 ,  H05K2201/09045 ,  H05K2203/0126 ,  H05K2203/0528 ,  H05K2203/308 ,  Y02E10/50 ,  Y02P70/521

    Abstract: Methods here disclosed provide for selectively coating the top surfaces or ridges of a 3-D substrate while avoiding liquid coating material wicking into micro cavities on 3-D substrates. The substrate includes holes formed in a three-dimensional substrate by forming a sacrificial layer on a template. The template includes a template substrate with posts and trenches between the posts. The steps include subsequently depositing a semiconductor layer and selectively etching the sacrificial layer. Then, the steps include releasing the semiconductor layer from the template and coating the 3-D substrate using a liquid transfer coating step for applying a liquid coating material to a surface of the 3-D substrate. The method may further include coating the 3-D substrate by selectively coating the top ridges or surfaces of the substrate.

    Abstract translation: 这里公开的方法提供了选择性地涂覆3-D衬底的顶表面或脊，同时避免液体涂覆材料吸收到3-D衬底上的微腔中。 衬底包括通过在模板上形成牺牲层而形成在三维衬底中的孔。 模板包括具有在柱之间的柱和沟槽的模板衬底。 这些步骤包括随后沉积半导体层并选择性地蚀刻牺牲层。 然后，该步骤包括从模板中释放半导体层并使用用于将液体涂覆材料施加到3-D衬底的表面的液体转移涂覆步骤涂覆3-D衬底。 该方法还可以包括通过选择性地涂覆衬底的顶部脊或表面来涂覆3-D衬底。

    HIGH-PRODUCTIVITY POROUS SEMICONDUCTOR MANUFACTURING EQUIPMENT
    4.
    发明申请
    HIGH-PRODUCTIVITY POROUS SEMICONDUCTOR MANUFACTURING EQUIPMENT 有权
    高效多孔半导体制造设备

    公开(公告)号：US20150315719A1

    公开(公告)日：2015-11-05

    申请号：US14679731

    申请日：2015-04-06

    Applicant: SOLEXEL, INC.

    Inventor： George D. Kamian ,  Somnath Nag ,  Subbu Tamilmani ,  Mehrdad M. Moslehi ,  Karl-Josef Kramer ,  Takao Yonehara

    IPC: C25D17/00

    CPC classification number: C25D11/32 ,  C25D11/005 ,  C25D17/001 ,  C25D17/06 ,  C25F3/12 ,  C25F7/00 ,  H01L31/1892 ,  Y02E10/50

    Abstract: This disclosure enables high-productivity fabrication of semiconductor-based separation layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers), optical reflectors (made of multi-layer/multi-porosity porous semiconductors such as porous silicon), formation of porous semiconductor (such as porous silicon) for anti-reflection coatings, passivation layers, and multi-junction, multi-band-gap solar cells (for instance, by forming a variable band gap porous silicon emitter on a crystalline silicon thin film or wafer-based solar cell). Other applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further the disclosure is applicable to the general fields of Photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.

    Abstract translation: 本公开使得能够高生产率地制造基于半导体的分离层（由单层或多层多孔半导体（例如多孔硅，包括单孔隙率或多孔度层构成），光反射器（由多层/多孔多孔半导体 孔隙度多孔半导体如多孔硅），用于防反射涂层的多孔半导体（例如多孔硅）的形成，钝化层和多结的多带隙太阳能电池（例如，通过形成可变带隙 晶体硅薄膜或晶圆太阳能电池上的多孔硅发射器）。 其他应用包括制造用于脱模和MEMS器件制造，膜形成和浅沟槽隔离（STI）多孔硅的MEMS分离和牺牲层（使用具有最佳孔隙率并随后氧化的多孔硅形成）。 此外，本公开可应用于光伏，MEMS（包括传感器和致动器）的独立或集成半导体微电子，半导体微电子芯片和光电子学的一般领域。

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