公开(公告)号：US10153135B2

公开(公告)日：2018-12-11

申请号：US15190722

申请日：2016-06-23

Applicant: SPTS Technologies Limited

Inventor： Anthony Paul Wilby ,  Stephen R Burgess ,  Ian Moncrieff ,  Paul Densley ,  Clive L Widdicks ,  Paul Rich ,  Adrian Thomas

IPC: H01J37/32 ,  H01L21/67 ,  C23C14/34

Abstract: An ICP plasma etching apparatus for etching a substrate includes at least one chamber, a substrate support positioned within the chamber, a plasma production device for producing a plasma for use in etching the substrate, and a protective structure which surrounds the substrate support so that, in use, a peripheral portion of the substrate is protected from unwanted deposition of material. The protective structure is arranged to be electrically biased and is formed from a metallic material so that metallic material can be sputtered from the protective structure onto an interior surface of the chamber to adhere particulate material to the interior surface.

公开(公告)号：US10900114B2

公开(公告)日：2021-01-26

申请号：US15084574

申请日：2016-03-30

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： Stephen R Burgess ,  Rhonda Hyndman ,  Amit Rastogi ,  Eduardo Paulo Lima ,  Clive L Widdicks ,  Paul Rich ,  Scott Haymore ,  Daniel Cook

IPC: C23C14/06 ,  C23C14/10 ,  C23C14/34 ,  C23C14/35 ,  H01J37/34 ,  H01J37/32

Abstract: A method is for depositing a dielectric material on to a substrate in a chamber by pulsed DC magnetron sputtering with a pulsed DC magnetron device which produces one or more primary magnetic fields. In the method, a sputtering material is sputtered from a target, wherein the target and the substrate are separated by a gap in the range 2.5 to 10 cm and a secondary magnetic field is produced within the chamber which causes a plasma produced by the pulsed DC magnetron device to expand towards one or more walls of the chamber.

公开(公告)号：US11875980B2

公开(公告)日：2024-01-16

申请号：US17139445

申请日：2020-12-31

Applicant: SPTS Technologies Limited

Inventor： Stephen R Burgess ,  Rhonda Hyndman ,  Amit Rastogi ,  Eduardo Paulo Lima ,  Clive L Widdicks ,  Paul Rich ,  Scott Haymore ,  Daniel Cook

IPC: H01J37/34 ,  C23C14/34 ,  C23C14/06 ,  C23C14/35 ,  C23C14/10 ,  H01J37/32

CPC classification number: H01J37/3458 ,  C23C14/0617 ,  C23C14/10 ,  C23C14/345 ,  C23C14/3485 ,  C23C14/35 ,  C23C14/351 ,  H01J37/32669 ,  H01J37/32688 ,  H01J37/345 ,  H01J37/3411 ,  H01J37/3426 ,  H01J37/3461 ,  H01J37/3467 ,  H01J37/3408

Abstract: A method is for depositing a dielectric material on to a substrate in a chamber by pulsed DC magnetron sputtering with a pulsed DC magnetron device which produces one or more primary magnetic fields. In the method, a sputtering material is sputtered from a target, wherein the target and the substrate are separated by a gap in the range 2.5 to 10 cm and a secondary magnetic field is produced within the chamber which causes a plasma produced by the pulsed DC magnetron device to expand towards one or more walls of the chamber.

公开(公告)号：US20210123130A1

公开(公告)日：2021-04-29

申请号：US17139445

申请日：2020-12-31

Applicant: SPTS Technologies Limited

Inventor： Stephen R Burgess ,  Rhonda Hyndman ,  Amit Rastogi ,  Eduardo Paulo Lima ,  Clive L Widdicks ,  Paul Rich ,  Scott Haymore ,  Daniel Cook

IPC: C23C14/06 ,  C23C14/34 ,  C23C14/35 ,  C23C14/10 ,  H01J37/34 ,  H01J37/32

Abstract: A method is for depositing a dielectric material on to a substrate in a chamber by pulsed DC magnetron sputtering with a pulsed DC magnetron device which produces one or more primary magnetic fields. In the method, a sputtering material is sputtered from a target, wherein the target and the substrate are separated by a gap in the range 2.5 to 10 cm and a secondary magnetic field is produced within the chamber which causes a plasma produced by the pulsed DC magnetron device to expand towards one or more walls of the chamber.