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公开(公告)号：US20240183024A1
公开(公告)日：2024-06-06
申请号：US18287635
申请日：2022-03-03
IPC分类号： C23C14/34 , C01G33/00 , C23C14/08 , H10N30/076 , H10N30/853
CPC分类号： C23C14/3414 , C01G33/006 , C23C14/088 , H10N30/076 , H10N30/8542 , C01P2002/34 , C01P2002/52 , C01P2006/40
摘要： There is provided a piezoelectric stack including: a substrate having a main surface with a diameter of 3 inches or more; and a piezoelectric film on the substrate, comprising a perovskite-type alkali niobium oxide containing potassium, sodium, niobium, and oxygen, wherein, a half-value width of an X-ray rocking curve of (001) is within a range of 0.5° or more and 2.5° or less over an entire area of an inside of a main surface of the piezoelectric film excluding its periphery when performing X-ray diffraction measurement on the piezoelectric film.
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2.发明公开公开(公告)号：US20230276711A2
公开(公告)日：2023-08-31
申请号：US17917055
申请日：2021-02-24
CPC分类号： B06B1/0622 , B06B1/0261
摘要： There is provided a piezoelectric stack, including: a substrate; an output-side bottom electrode film on the substrate; an output-side piezoelectric film, being an oxide film, on the output-side bottom electrode film; an output-side top electrode film on the output-side piezoelectric film; an input-side bottom electrode film on the substrate; an input-side piezoelectric film, being a nitride film, on the input-side bottom electrode film; an input-side top electrode film on the input-side piezoelectric film; and an ultrasonic output part and ultrasonic input part placed in such a manner as not overlapping each other when viewed from a top surface of the substrate, the ultrasonic output part comprising a stacked part of the output-side bottom electrode film, the output-side piezoelectric film, and the output-side top electrode film, the ultrasonic input part comprising a stacked part of the input-side bottom electrode film, the input-side piezoelectric film, and the input-side top electrode film.
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公开(公告)号：US20210217927A1
公开(公告)日：2021-07-15
申请号：US16952699
申请日：2020-11-19
发明人： Hajime FUJIKURA , Taichiro KONNO , Takeshi KIMURA
摘要： A group III-nitride laminated substrate includes a sapphire substrate, a first layer that is formed on the sapphire substrate and is made of aluminum nitride, a second layer that is formed on the first layer and serves as an n-type layer made of gallium nitride and doped with an n-type dopant, a third layer that is formed on the second layer and serves as a light-emitting layer made of a group III-nitride, and a fourth layer that is formed on the third layer and serves as a p-type layer made of a group III-nitride and doped with a p-type dopant. The second layer has a thickness of 7 μm or less. A half-value width of (0002) diffraction determined through X-ray rocking curve analysis is 100 seconds or less, and a half-value width of (10-12) diffraction determined through X-ray rocking curve analysis is 200 seconds or less.
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公开(公告)号：US20200040482A1
公开(公告)日：2020-02-06
申请号：US16410224
申请日：2019-10-04
发明人： Fumimasa HORIKIRI , Takeshi KIMURA
摘要： There is provided a nitride crystal substrate having a main surface and formed of group-III nitride crystal, wherein NIR/NElec, satisfies formula (1) below, which is a ratio of a carrier concentration NIR at a center of the main surface relative to a carrier concentration NElec: 0.5≤NIR/NElec≤1.5 . . . (1) where NIR is the carrier concentration on the main surface side of the nitride crystal substrate obtained based on a reflectance of the main surface measured by a reflection type Fourier transform infrared spectroscopy, and NElec is the carrier concentration in the nitride crystal substrate obtained based on a specific resistance of the nitride crystal substrate and a mobility of the nitride crystal substrate measured by an eddy current method.
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公开(公告)号：US20230245885A1
公开(公告)日：2023-08-03
申请号：US18102138
申请日：2023-01-27
发明人： Shota KANEKI , Hajime FUJIKURA , Taichiro KONNO , Takeshi KIMURA
IPC分类号： H01L21/02
CPC分类号： H01L21/02579 , H01L21/0254 , H01L21/0262 , H01L21/02458 , H01S2304/04
摘要： There is provided a semiconductor laminate, comprising: a substrate; and a p-type layer provided above the substrate and comprising a group III nitride containing Mg, wherein C concentration in the p-type layer is less than 5 × 1015 cm-3, O concentration in the p-type layer is less than 5 × 1015 cm-3, Si concentration in the p-type layer is less than 1×1015 cm-3, and F concentration in the p-type layer is 1×1014 cm-3 or more.
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公开(公告)号：US20220254988A1
公开(公告)日：2022-08-11
申请号：US17624555
申请日：2020-07-02
IPC分类号： H01L41/187 , H01L41/316 , H01L41/08
摘要： A piezoelectric stack including: a substrate; an electrode film; and a piezoelectric film as a poly-crystal film comprising an alkali niobium oxide of a perovskite structure represented by a composition formula of (K1-xNax)NbO3 (0
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公开(公告)号：US20210184080A1
公开(公告)日：2021-06-17
申请号：US16952665
申请日：2020-11-19
发明人： Hajime FUJIKURA , Taichiro KONNO , Takeshi KIMURA
IPC分类号： H01L33/32
摘要： Provided is a technology capable of improving the quality of a GaN layer that is formed on an underlying substrate. A group III-nitride laminated substrate includes an underlying substrate, a first layer that is formed on the underlying substrate and is made of aluminum nitride, and a second layer that is formed on the first layer and is made of gallium nitride. The second layer has a thickness of 10 μm or less. A half-value width of (0002) diffraction determined through X-ray rocking curve analysis is 100 seconds or less, and a half-value width of (10-12) diffraction determined through X-ray rocking curve analysis is 200 seconds or less.
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8.发明公开公开(公告)号：US20240206342A1
公开(公告)日：2024-06-20
申请号：US17908899
申请日：2021-02-24
IPC分类号： H10N30/853 , C30B28/12 , C30B29/02 , C30B29/30 , C30B29/68 , H10N30/076
CPC分类号： H10N30/8542 , C30B28/12 , C30B29/02 , C30B29/30 , C30B29/68 , H10N30/076
摘要： There is provided a piezoelectric film, being a polycrystalline film comprised of potassium sodium niobate; containing at least one metal element selected from a group consisting of Cu and Mn; and having 1.0 or less ratio of a concentration B of the metal element at grain boundaries of crystals, with respect to a concentration A of the metal element in a matrix phase of the crystals.
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9.发明公开公开(公告)号：US20240099143A1
公开(公告)日：2024-03-21
申请号：US18264318
申请日：2022-01-12
IPC分类号： H10N30/03 , H10N30/00 , H10N30/063 , H10N30/076 , H10N30/077 , H10N30/87 , H10N30/88
CPC分类号： H10N30/03 , H10N30/063 , H10N30/076 , H10N30/077 , H10N30/1051 , H10N30/87 , H10N30/883
摘要： There is provided a piezoelectric stack including: a substrate (1); a bottom electrode film (2) on the substrate; a piezoelectric film (3) on the bottom electrode film, having a planar area smaller than a planar area of the bottom electrode film; a top electrode film (4) on the piezoelectric film; and an insulating film (5) provided from the top electrode film to the bottom electrode film and covering at least a part of a side surface of the piezoelectric film, wherein the insulating film has a slope (9a) filling a step between a top surface of the top electrode film and a top surface of the bottom electrode film, and the slope has a shape alleviating the step.
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10.发明公开公开(公告)号：US20230142065A1
公开(公告)日：2023-05-11
申请号：US17917055
申请日：2021-02-24
CPC分类号： B06B1/0622 , B06B1/0261
摘要： There is provided a piezoelectric stack, including: a substrate; an output-side bottom electrode film on the substrate; an output-side piezoelectric film, being an oxide film, on the output-side bottom electrode film; an output-side top electrode film on the output-side piezoelectric film; an input-side bottom electrode film on the substrate; an input-side piezoelectric film, being a nitride film, on the input-side bottom electrode film; an input-side top electrode film on the input-side piezoelectric film; and an ultrasonic output part and ultrasonic input part placed in such a manner as not overlapping each other when viewed from a top surface of the substrate, the ultrasonic output part comprising a stacked part of the output-side bottom electrode film, the output-side piezoelectric film, and the output-side top electrode film, the ultrasonic input part comprising a stacked part of the input-side bottom electrode film, the input-side piezoelectric film, and the input-side top electrode film.
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