利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

29 条记录 (耗时 0.019 秒)

    Method for producing and epitaxial substrate for compound semiconductor light-emitting device
    2.
    发明授权
    Method for producing and epitaxial substrate for compound semiconductor light-emitting device 失效
    用于化合物半导体发光器件的制造和外延衬底的方法

    公开(公告)号：US07459326B2

    公开(公告)日：2008-12-02

    申请号：US11495748

    申请日：2006-07-31

    申请人： Sadanori Yamanaka ,  Yoshihiko Tsuchida ,  Yoshinobu Ono ,  Yasushi Iyechika

    发明人： Sadanori Yamanaka ,  Yoshihiko Tsuchida ,  Yoshinobu Ono ,  Yasushi Iyechika

    IPC分类号： H01L21/00

    CPC分类号： H01L33/32 ,  H01L33/14

    摘要： In order to improve light-emission efficiency without degrading protection performance of a light-emitting layer structure a three p-type layer structure composed of first to third layers is provided in contact with a light-emitting layer structure. The first layer is an n-type AlGaN layer that serves as a protective layer, the third layer is a GaN:Mg layer that serves as a contact layer and the second layer is an AlGaN:Mg layer formed between these layers as an intermediate layer. The provision of the intermediate layer enables an InGaN layer to be thoroughly protected from heat during growth of layers above even if the n-type AlGaN layer is made thin, whereby the GaN:Mg layer can be brought near the light-emitting layer structure to enhance the efficiency of hole injection into the light-emitting layer structure and thus increase the light-emission efficiency.

    摘要翻译： 为了提高发光效率而不降低发光层结构的保护性能，与发光层结构接触地设置由第一至第三层构成的三个p型层结构。 第一层是用作保护层的n型AlGaN层，第三层是用作接触层的GaN：Mg层，第二层是在这些层之间形成的作为中间层的AlGaN：Mg层 。 通过提供中间层，即使使n型AlGaN层变薄，InGaN层也可以在层的生长期间被充分地保护成热，由此能够使GaN：Mg层靠近发光层结构， 提高空穴注入发光层结构的效率，从而提高发光效率。

    Epitaxial substrate for compound semiconductor light-emitting device, method for producing the same and light-emitting device
    3.
    发明申请
    Epitaxial substrate for compound semiconductor light-emitting device, method for producing the same and light-emitting device 失效
    用于化合物半导体发光器件的外延衬底，其制造方法和发光器件

    公开(公告)号：US20060267035A1

    公开(公告)日：2006-11-30

    申请号：US11495748

    申请日：2006-07-31

    申请人： Sadanori Yamanaka ,  Yoshihiko Tsuchida ,  Yoshinobu Ono ,  Yasushi Iyechika

    发明人： Sadanori Yamanaka ,  Yoshihiko Tsuchida ,  Yoshinobu Ono ,  Yasushi Iyechika

    IPC分类号： H01L33/00

    CPC分类号： H01L33/32 ,  H01L33/14

    摘要： In order to improve light-emission efficiency without degrading protection performance of a light-emitting layer structure a three p-type layer structure composed of first to third layers is provided in contact with a light-emitting layer structure. The first layer is an n-type AlGaN layer that serves as a protective layer, the third layer is a GaN:Mg layer that serves as a contact layer and the second layer is an AlGaN:Mg layer formed between these layers as an intermediate layer. The provision of the intermediate layer enables an InGaN layer to be thoroughly protected from heat during growth of layers above even if the n-type AlGaN layer is made thin, whereby the GaN:Mg layer can be brought near the light-emitting layer structure to enhance the efficiency of hole injection into the light-emitting layer structure and thus increase the light-emission efficiency.

    摘要翻译： 为了提高发光效率而不降低发光层结构的保护性能，与发光层结构接触地设置由第一至第三层构成的三个p型层结构。 第一层是用作保护层的n型AlGaN层，第三层是用作接触层的GaN：Mg层，第二层是在这些层之间形成的AlGaN：Mg层作为中间层 。 通过提供中间层，即使使n型AlGaN层变薄，InGaN层也可以在层的生长期间被充分地保护成热，由此能够使GaN：Mg层靠近发光层结构， 提高空穴注入发光层结构的效率，从而提高发光效率。

    GaN based luminescent device on a metal substrate
    6.
    发明授权
    GaN based luminescent device on a metal substrate 有权
    GaN基发光器件在金属衬底上

    公开(公告)号：US07897993B2

    公开(公告)日：2011-03-01

    申请号：US11661266

    申请日：2005-08-30

    申请人： Yoshinobu Ono ,  Sadanori Yamanaka

    发明人： Yoshinobu Ono ,  Sadanori Yamanaka

    IPC分类号： H01L33/00

    CPC分类号： H01L33/32 ,  H01L33/007

    摘要： A compound semiconductor luminescent device characterized by comprising an electroconductive substrate, a compound semiconductor function layer including a GaN layer, an electrode, an adhesiveness-enhancing layer, and a bonding layer, which are stacked in this order wherein the above-described electroconductive substrate includes a metal material that indicates a thermal expansion coefficient different by 1.5×10−6/° C. or less from GaN.

    摘要翻译： 一种化合物半导体发光装置，其特征在于，包括导电性基板，包含GaN层的化合物半导体功能层，电极，粘合性增强层和接合层，其中，上述导电性基板包括 表示与GaN不同的热膨胀系数为1.5×10 -6 /℃以下的金属材料。

    Gan Based Luminescent Device on a Metal Substrate
    7.
    发明申请
    Gan Based Luminescent Device on a Metal Substrate 有权
    甘基发光器件在金属基板上

    公开(公告)号：US20070295984A1

    公开(公告)日：2007-12-27

    申请号：US11661266

    申请日：2005-08-30

    申请人： Yoshinobu Ono ,  Sadanori Yamanaka

    发明人： Yoshinobu Ono ,  Sadanori Yamanaka

    IPC分类号： H01L33/00

    CPC分类号： H01L33/32 ,  H01L33/007

    摘要： A compound semiconductor luminescent device characterized by comprising: an electroconductive substrate; a compound semiconductor function layer including a GaN layer; an electrode; an adhesiveness-enhancing layer; and a bonding layer, which are stacked in this order, wherein the above-described electroconductive substrate includes a metal material that indicates a thermal expansion coefficient different by 1.5×10−6/° C. or less from GaN.

    摘要翻译： 一种化合物半导体发光装置，其特征在于，包括：导电性基板; 包括GaN层的化合物半导体功能层; 电极 粘合性增强层; 和接合层，其中，上述导电性基板包括表示与GaN不同的热膨胀系数为1.5×10 -6 /℃以下的金属材料 。

    Light emitting device having a monotone decreasing function
    8.
    发明授权
    Light emitting device having a monotone decreasing function 有权
    具有单调递减功能的发光器件

    公开(公告)号：US08097887B2

    公开(公告)日：2012-01-17

    申请号：US12225697

    申请日：2007-03-27

    申请人： Sadanori Yamanaka ,  Yoshinobu Ono ,  Kazumasa Ueda

    发明人： Sadanori Yamanaka ,  Yoshinobu Ono ,  Kazumasa Ueda

    IPC分类号： H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00 ,  H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L29/22

    CPC分类号： H01L33/22 ,  H01L33/20 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The present invention provides a light emitting device. The light emitting device has a light distribution in which a light distribution I (θ, φ) obtained when light emitted from a chip of the light emitting device is directly measured is not dependent on a direction φ and is substantially represented by I (θ, φ)=I (θ). I (θ, φ) represents a light intensity distribution in a direction (θ, φ), θ represents an angle from a direction of a normal to a light extraction surface of the light emitting device (0≦θ≦90°), φ represents a rotation angle around the normal (0≦φ≦360°), and I (θ) represents a monotone decreasing function with which 0 is approached when θ=90° is satisfied. In the light emitting device, of a structural body constructing the chip of the light emitting device, with regard to a size of a portion of the structural body which is transparent to light emitted from a light emitting layer, a ratio (an aspect ratio) between the size in a lateral direction and the size in a thickness direction is not less than 5 and a structure having a light scattering function is provided on a surface of the light emitting device chip or in an interior of the transparent portion of the structural body.

    摘要翻译： 本发明提供一种发光装置。 发光装置具有光分布，其中直接测量从发光器件的芯片发出的光所获得的光分布I（＆amp;θ; ph ph）不依赖于方向＆phgr; 并且基本上由I（＆Thetas;＆phgr;）= I（＆thetas;）表示。 I（＆thetas;＆phgr。）表示方向（＆thetas;＆phgr;），＆thetas的光强度分布; 表示从发光器件的法线方向到光提取表面的角度（0＆amp; nlE;＆hell;＆nlE; 90°），＆phgr; 表示正常（0＆nlE;＆phgr;＆nlE; 360°）周围的旋转角度，I（＆Thetas;）表示满足＆amp; t = 90°的单调递减函数，接近0。 在构成发光装置的芯片的结构体的发光装置中，对于从发光层发出的光透明的结构体的一部分的尺寸，比率（纵横比） 在横向尺寸和厚度方向之间的尺寸不小于5，并且在发光元件芯片的表面上或在结构体的透明部分的内部设置具有光散射功能的结构 。

    Semiconductor wafer, method of producing semiconductor wafer, electronic device, and method of producing electronic device
    9.
    发明授权
    Semiconductor wafer, method of producing semiconductor wafer, electronic device, and method of producing electronic device 有权
    半导体晶片，半导体晶片的制造方法，电子器件以及电子器件的制造方法

    公开(公告)号：US08823141B2

    公开(公告)日：2014-09-02

    申请号：US13255648

    申请日：2010-03-08

    申请人： Tomoyuki Takada ,  Masahiko Hata ,  Sadanori Yamanaka

    发明人： Tomoyuki Takada ,  Masahiko Hata ,  Sadanori Yamanaka

    IPC分类号： H01L29/20 ,  H01L21/02

    CPC分类号： H01L21/0237 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/0245 ,  H01L21/02452 ,  H01L21/02463 ,  H01L21/02538 ,  H01L21/02546 ,  H01L21/02642 ,  H01L29/107 ,  H01L29/73 ,  H01L29/7371 ,  H01L29/772

    摘要： The semiconductor wafer includes: a base wafer; and an inhibition layer that is disposed on the base wafer as one piece or to be separate portions from each other, and inhibits growth of a crystal of a compound semiconductor, where the inhibition layer has a plurality of first opening regions that have a plurality of openings penetrating the inhibition layer and leading to the base wafer, each of the plurality of first opening regions includes therein a plurality of first openings disposed in the same arrangement, some of the plurality of first openings are first element forming openings each provided with a first compound semiconductor on which an electronic element is to be formed, and the other of the plurality of first openings are first dummy openings in which no electronic element is to be formed.

    摘要翻译： 半导体晶片包括：基底晶片; 以及抑制层，其一体地设置在所述基底晶片上或者彼此分离，并且抑制化合物半导体的晶体的生长，其中所述抑制层具有多个第一开口区域，所述第一开口区域具有多个 穿过所述抑制层并通向所述基底晶片的开口，所述多个第一开口区域中的每一个在其中包括设置在相同布置中的多个第一开口，所述多个第一开口中的一些是第一元件形成开口，每个元件形成开口设置有第一 其上形成有电子元件的复合半导体，并且多个第一开口中的另一个是其中不形成电子元件的第一虚拟开口。

    Semiconductor wafer, semiconductor wafer manufacturing method, and electronic device
    10.
    发明授权
    Semiconductor wafer, semiconductor wafer manufacturing method, and electronic device 失效
    半导体晶片，半导体晶片制造方法和电子器件

    公开(公告)号：US08716836B2

    公开(公告)日：2014-05-06

    申请号：US12811011

    申请日：2008-12-26

    申请人： Tomoyuki Takada ,  Sadanori Yamanaka ,  Masahiko Hata ,  Taketsugu Yamamoto ,  Kazumi Wada

    发明人： Tomoyuki Takada ,  Sadanori Yamanaka ,  Masahiko Hata ,  Taketsugu Yamamoto ,  Kazumi Wada

    IPC分类号： H01L21/331 ,  H01L29/737

    CPC分类号： H01L21/8258 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02546 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/8252 ,  H01L29/66318

    摘要： A high-quality GaAs-type crystal thin film using an inexpensive Si wafer with good thermal release characteristics is achieved. Provided is a semiconductor wafer comprising an Si wafer; an inhibiting layer that is formed on the wafer and that inhibits crystal growth, the inhibiting layer including a covering region that covers a portion of the wafer and an open region that does not cover a portion of the wafer within the covering region; a Ge layer that is crystal-grown in the open region; and a functional layer that is crystal-grown on the Ge layer. The Ge layer may be formed by annealing with a temperature and duration that enables movement of crystal defects, and the annealing is repeated a plurality of times.

    摘要翻译： 实现了具有良好热释放特性的廉价Si晶片的高质量GaAs型晶体薄膜。 提供了包括Si晶片的半导体晶片; 所述抑制层形成在所述晶片上并且抑制晶体生长，所述抑制层包括覆盖所述晶片的一部分的覆盖区域和不覆盖所述覆盖区域内的所述晶片的一部分的开放区域; 在开放区域晶体生长的Ge层; 以及在Ge层上晶体生长的功能层。 Ge层可以通过使得能够移动晶体缺陷的温度和持续时间退火而形成，并且退火重复多次。