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公开(公告)号：US07098484B2
公开(公告)日：2006-08-29
申请号：US10614062
申请日：2003-07-08
IPC分类号： H01L33/00
摘要： In order to improve light-emission efficiency without degrading protection performance of a light-emitting layer structure a three p-type layer structure composed of first to third layers is provided in contact with a light-emitting layer structure. The first layer is an n-type AlGaN layer that serves as a protective layer, the third layer is a GaN:Mg layer that serves as a contact layer and the second layer is an AlGaN:Mg layer formed between these layers as an intermediate layer. The provision of the intermediate layer enables an InGaN layer to be thoroughly protected from heat during growth of layers above even if the n-type AlGaN layer is made thin, whereby the GaN:Mg layer can be brought near the light-emitting layer structure to enhance the efficiency of hole injection into the light-emitting layer structure and thus increase the light-emission efficiency.
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2.发明申请Epitaxial substrate for compound semiconductor light-emitting device, method for producing the same and light-emitting device 失效用于化合物半导体发光器件的外延衬底，其制造方法和发光器件公开(公告)号：US20060267035A1
公开(公告)日：2006-11-30
申请号：US11495748
申请日：2006-07-31
IPC分类号： H01L33/00
摘要： In order to improve light-emission efficiency without degrading protection performance of a light-emitting layer structure a three p-type layer structure composed of first to third layers is provided in contact with a light-emitting layer structure. The first layer is an n-type AlGaN layer that serves as a protective layer, the third layer is a GaN:Mg layer that serves as a contact layer and the second layer is an AlGaN:Mg layer formed between these layers as an intermediate layer. The provision of the intermediate layer enables an InGaN layer to be thoroughly protected from heat during growth of layers above even if the n-type AlGaN layer is made thin, whereby the GaN:Mg layer can be brought near the light-emitting layer structure to enhance the efficiency of hole injection into the light-emitting layer structure and thus increase the light-emission efficiency.
摘要翻译： 为了提高发光效率而不降低发光层结构的保护性能，与发光层结构接触地设置由第一至第三层构成的三个p型层结构。 第一层是用作保护层的n型AlGaN层，第三层是用作接触层的GaN：Mg层，第二层是在这些层之间形成的AlGaN：Mg层作为中间层 。 通过提供中间层，即使使n型AlGaN层变薄，InGaN层也可以在层的生长期间被充分地保护成热，由此能够使GaN：Mg层靠近发光层结构， 提高空穴注入发光层结构的效率，从而提高发光效率。
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3.发明授权Method for producing and epitaxial substrate for compound semiconductor light-emitting device 失效用于化合物半导体发光器件的制造和外延衬底的方法公开(公告)号：US07459326B2
公开(公告)日：2008-12-02
申请号：US11495748
申请日：2006-07-31
IPC分类号： H01L21/00
摘要： In order to improve light-emission efficiency without degrading protection performance of a light-emitting layer structure a three p-type layer structure composed of first to third layers is provided in contact with a light-emitting layer structure. The first layer is an n-type AlGaN layer that serves as a protective layer, the third layer is a GaN:Mg layer that serves as a contact layer and the second layer is an AlGaN:Mg layer formed between these layers as an intermediate layer. The provision of the intermediate layer enables an InGaN layer to be thoroughly protected from heat during growth of layers above even if the n-type AlGaN layer is made thin, whereby the GaN:Mg layer can be brought near the light-emitting layer structure to enhance the efficiency of hole injection into the light-emitting layer structure and thus increase the light-emission efficiency.
摘要翻译： 为了提高发光效率而不降低发光层结构的保护性能，与发光层结构接触地设置由第一至第三层构成的三个p型层结构。 第一层是用作保护层的n型AlGaN层，第三层是用作接触层的GaN：Mg层，第二层是在这些层之间形成的作为中间层的AlGaN：Mg层 。 通过提供中间层，即使使n型AlGaN层变薄，InGaN层也可以在层的生长期间被充分地保护成热，由此能够使GaN：Mg层靠近发光层结构， 提高空穴注入发光层结构的效率，从而提高发光效率。
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公开(公告)号：US07205577B2
公开(公告)日：2007-04-17
申请号：US10162404
申请日：2002-06-05
IPC分类号： H01L33/00
摘要： A group 3–5 compound semiconductor comprising an interface of two layers having lattice mismatch, an intermediate layer having a film thickness of 25 nm or more and a quantum well layer, in this order. The compound semiconductor has high crystallinity and high quality, and suitably used for a light emitting diode.
摘要翻译： 包括具有晶格失配的两层的界面的组3-5化合物半导体，膜厚度为25nm以上的中间层和量子阱层。 化合物半导体具有高结晶度和高质量，并且适用于发光二极管。
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公开(公告)号：US06225195B1
公开(公告)日：2001-05-01
申请号：US09127922
申请日：1998-08-03
IPC分类号： C30B2300
CPC分类号： H01L33/325 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L33/007
摘要： A method for manufacturing a group III-V compound semiconductor represented by the general formula InxGayAlzN (where x+y+z=1, 0≦x≦1, 0≦y≦1, and 0≦z≦1) by metalorganic vapor phase epitaxy method is provided. The group III-V compound semiconductor has a semiconductor layer consisting of a p-type dopant-nondoped layer, and a semiconductor layer including a p-type dopant-doped layer. In the method, a reactor for growing the semiconductor layer consisting of a p-type dopant-nondoped layer and a reactor for doping a p-type dopant are mutually different.
摘要翻译： 一种用通式InxGayAlzN（其中x + y + z =1,0,0≤x≤1,0<= y <= 1，0≤z≤1）表示的III-V族化合物半导体的制造方法， 1）通过金属有机气相外延法提供。 III-V族化合物半导体具有由p型掺杂剂非掺杂层构成的半导体层和包含p型掺杂剂掺杂层的半导体层。 在该方法中，用于生长由p型掺杂剂非掺杂层组成的半导体层的反应器和用于掺杂p型掺杂剂的反应器是相互不同的。
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公开(公告)号：US5980632A
公开(公告)日：1999-11-09
申请号：US219115
申请日：1998-12-23
CPC分类号： H01L33/007
摘要： A process for producing a Group III--V compound semiconductor represented by the general formula In.sub.x Ga.sub.y Al.sub.z N (provided that x+y+z=1, 0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, and 0.ltoreq.z.ltoreq.1) employs a support member for forming the semiconductor, wherein the member constitutes SiC which is obtained by converting a graphite base material into SiC. In another embodiment, the member comprises a graphite-SiC composite wherein at least a surface layer part of a graphite substrate is converted into SiC. The member of the invention has superior chemical and mechanical stability, thereby making it useful in high-productivity production devices for making compound semiconductors.
摘要翻译： 一种制备由通式In x Ga y Al z N表示的III-V族化合物半导体的方法（假定x + y + z =1,0,0≤x≤1,0,0≤y≤1,0 使用用于形成半导体的支撑构件，其中所述构件构成通过将石墨基底材料转化为SiC而获得的SiC。 在另一个实施方案中，所述构件包括石墨-SiC复合材料，其中至少石墨基底的表面层部分转化为SiC。 本发明的成员具有优异的化学和机械稳定性，从而使其在制备化合物半导体的高生产率生产装置中是有用的。
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7.发明授权
公开(公告)号：US6104044A
公开(公告)日：2000-08-15
申请号：US861820
申请日：1997-05-23
申请人： Yasushi Iyechika , Yoshinobu Ono , Tomoyuki Takada , Katsumi Inui
发明人： Yasushi Iyechika , Yoshinobu Ono , Tomoyuki Takada , Katsumi Inui
IPC分类号： H01L21/285 , H01B1/16 , H01L21/28 , H01L29/45 , H01L33/32 , H01L33/40 , H01S5/00 , H01S5/042 , H01S5/323 , H01L29/205 , H01L27/15 , H01S3/19
CPC分类号： H01L33/40 , H01L29/452 , H01L33/42 , H01S5/0425 , H01S5/32341
摘要： Disclosed is an electrode material for Group III-V compound semiconductor represented by the general formula In.sub.x Ga.sub.y Al.sub.z N (provided that x+y+z=1, 0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, and 0.ltoreq.z.ltoreq.1) doped with a p-type impurity which is capable of obtaining good ohmic contact, and an electrode using the same, thereby making it possible to reduce a driving voltage of a device using the compound semiconductor. The electrode material is a metal comprising at least Ca and a noble metal, wherein the total amount of the weight of Ca and the noble metal is not less than 50% by weight and not more than 100% by weight based on the weight of the whole electrode material.
摘要翻译： 公开了由通式In x Ga y Al z N表示的用于III-V族化合物半导体的电极材料（假定x + y + z =1,0,0≤x≤1,0≤y≤1，和 掺杂有能够获得良好的欧姆接触的p型杂质，以及使用其的电极，从而可以降低使用化合物半导体的器件的驱动电压。 电极材料是至少包含Ca和贵金属的金属，其中Ca和贵金属的重量总量不小于50重量％且不大于100重量％，基于 整个电极材料。
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公开(公告)号：US6100105A
公开(公告)日：2000-08-08
申请号：US852898
申请日：1997-05-09
CPC分类号： C23C16/45572 , C23C16/455 , C30B25/10 , C30B25/14 , H01L33/007
摘要： A device for the production of a semiconductor compound by means of a metal organic vapor phase epitaxy method, has a structure including a metallic member disposed at a part brought into contact with an upstream flow of a raw material gas and another part for growing a compound semiconductor, wherein the metallic member is cooled to not higher than 300.degree. C. The present invention provides a device for the production of a semiconductor compound with high productivity using a metallic material, wherein processing precision is high and the risk of breakage is low.
摘要翻译： 通过金属有机气相外延法制造半导体化合物的装置具有包括设置在与原料气体的上游流动接触的部分的金属部件和用于生长化合物的另一部分的结构 半导体，其中金属构件被冷却至不高于300℃。本发明提供一种使用金属材料生产高生产率的半导体化合物的装置，其中加工精度高并且破损的风险低。
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9.发明授权Method of producing 3-5 group compound semiconductor and semiconductor element 有权生产3-5组化合物半导体和半导体元件的方法公开(公告)号：US06716724B1
公开(公告)日：2004-04-06
申请号：US10337287
申请日：2003-01-07
申请人： Yasushi Iyechika , Masaya Shimizu , Yoshinobu Ono
发明人： Yasushi Iyechika , Masaya Shimizu , Yoshinobu Ono
IPC分类号： C30B100
CPC分类号： C30B23/02 , C30B25/02 , C30B25/18 , C30B29/403 , C30B29/406 , H01L21/0242 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , Y10S438/975
摘要： In the method of producing the 3-5 group compound semiconductor carrying out the lateral direction selective growth of the desired GaN type 3-5 group compound-semiconductor layer on this c-plane by the stripe mask formed on the c-plane of the underlying crystal containing a GaN type 3-5 group compound semiconductor, a stripe mask is formed on the underlying crystal such that the direction of the stripe is rotated 0.095° or more and less than 9.6° from direction, and with using this stripe mask, the lateral direction selective growth of the GaN type 3-5 group compound-semiconductor layer is carried out, and a high quality 3-5 group compound-semiconductor layer can be formed on the underlying crystal.
摘要翻译： 在通过形成在下面的c面上的条纹掩模来制造在该c面上进行期望的GaN 3-5型化合物半导体层的横向选择性生长的3-5族化合物半导体的方法 含有GaN类型3-5组化合物半导体的晶体，在下面的晶体上形成条纹掩模，使得条带的方向从<1-100>方向旋转0.095°以上且小于9.6°，并且使用 该条带掩模，进行GaN 3-5型化合物半导体层的横向选择性生长，并且可以在下面的晶体上形成高质量的3-5组化合物半导体层。
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10.发明授权公开(公告)号：US06388323B1
公开(公告)日：2002-05-14
申请号：US08808537
申请日：1997-02-28
IPC分类号： H01L2348
摘要： The invention provides an electrode material having the low contact resistance against a III-V group compound semiconductor, thereby realizing a light emitting device having a high luminance and driven at low voltages. The electrode material of the invention is applied to a III-V group compound semiconductor, which is expressed as a general formula of InxGayAlzN, where x+y+z=1, 0≦x≦1, 0≦y≦1, and 0≦z≦1, and doped with p-type impurities. The electrode material comprises an alloy of Au and at least one metal selected from the group consisting of Mg and Zn.
摘要翻译： 本发明提供一种对III-V族化合物半导体具有低接触电阻的电极材料，从而实现了具有高亮度和低电压驱动的发光器件。 将本发明的电极材料应用于III-V族化合物半导体，其通过以下公式表示：In x Ga y Al z N，其中x + y + z = 1，0 <= x <= 1,0，y = 1，0 <= z <= 1，并掺杂有p型杂质。 电极材料包括Au和选自Mg和Zn中的至少一种金属的合金。
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