公开(公告)号：US20140054579A1

公开(公告)日：2014-02-27

申请号：US13693423

申请日：2012-12-04

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Dae-Ho KIM ,  Hyun-Jae NA ,  Yong-Su LEE ,  Myoung-Geun CHA ,  Yoon-Ho KHANG ,  Sang-Gab KIM ,  Jae-Neung KIM ,  Se-Hwan YU

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/786 ,  H01L29/4908 ,  H01L29/516 ,  H01L29/66477 ,  H01L29/78618 ,  H01L29/78693

Abstract: A thin film transistor substrate includes a base substrate, an active pattern, a gate insulation pattern and a gate electrode. The active pattern is disposed on the base substrate. The active pattern includes a source electrode, a drain electrode, and a channel disposed between the source electrode and the drain electrode. The gate insulation pattern and the gate electrode overlap with the channel. The gate insulation pattern is disposed between the channel and the gate electrode. The source electrode and the drain electrode each include a fluorine deposition layer.

Abstract translation: 薄膜晶体管基板包括基底基板，有源图案，栅极绝缘图案和栅电极。 有源图案设置在基底基板上。 有源图案包括源电极，漏电极和设置在源电极和漏极之间的沟道。 栅极绝缘图案和栅电极与沟道重叠。 栅极绝缘图案设置在沟道和栅电极之间。 源电极和漏极各自包括氟沉积层。

公开(公告)号：US20140042429A1

公开(公告)日：2014-02-13

申请号：US13755730

申请日：2013-01-31

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Sang-Ho PARK ,  Su-Hyoung KANG ,  Dong-Hwan SHIM ,  Yoon-Ho KHANG ,  Se-Hwan YU ,  Min-Jung LEE ,  Yong-Su LEE

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L27/127 ,  H01L21/28008 ,  H01L27/124 ,  H01L27/1262 ,  H01L29/66742 ,  H01L29/66757 ,  H01L29/786 ,  H01L29/78633 ,  H01L29/7869

Abstract: A thin film transistor substrate includes a base substrate, an active pattern disposed on the base substrate, a gate insulation pattern disposed on the active pattern, a gate electrode disposed on the gate insulation pattern and overlapping the channel, and a light-blocking pattern disposed between the base substrate and the active pattern and having a size greater than the active pattern. The active pattern includes a source electrode, a drain electrode, and a channel disposed between the source electrode and the drain electrode.

Abstract translation: 薄膜晶体管基板包括基底基板，设置在基底基板上的有源图案，设置在有源图案上的栅极绝缘图案，设置在栅极绝缘图案上并与沟道重叠的栅电极，以及布置的阻光图案 在基底基板和活性图案之间并且具有大于活性图案的尺寸。 有源图案包括源电极，漏电极和设置在源电极和漏极之间的沟道。

公开(公告)号：US20170092704A1

公开(公告)日：2017-03-30

申请号：US15377794

申请日：2016-12-13

Applicant: Samsung Display Co., Ltd

Inventor： Myoung-Geun CHA ,  Sang-Ho PARK ,  Hyun-Jae NA ,  Yoon-Ho KHANG ,  Dae-Ho KIM

IPC: H01L27/32 ,  G02F1/1343 ,  G02F1/1368 ,  H01L27/12 ,  G02F1/1362

CPC classification number: H01L27/3232 ,  G02F1/134309 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/136295 ,  G02F2201/123 ,  H01L21/477 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1259 ,  H01L27/1288 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/7869

Abstract: A thin film transistor (TFT), method of manufacturing the TFT and a flat panel display having the TFT are disclosed. In one aspect, the TFT comprises a substrate and an active layer formed over the substrate, wherein the active layer is formed of oxide semiconductor, and wherein the active layer includes two opposing sides. The TFT also comprises source and drain regions formed at the opposing sides of the active layer, a first insulating layer formed over the active layer, a gate electrode formed over the active layer, a second insulating layer formed covering the first insulation layer and the gate electrode, and a first conductive layer formed on the source and drain regions and contacting the second insulating layer.

公开(公告)号：US20160141310A1

公开(公告)日：2016-05-19

申请号：US15006295

申请日：2016-01-26

Applicant: Samsung Display Co., Ltd.

Inventor： Sang-Ho PARK ,  Su-Hyoung KANG ,  Dong-Hwan SHIM ,  Yoon-Ho KHANG ,  Se-Hwan YU ,  Min-Jung LEE ,  Yong-Su LEE

IPC: H01L27/12

CPC classification number: H01L27/127 ,  H01L21/28008 ,  H01L27/124 ,  H01L27/1262 ,  H01L29/66742 ,  H01L29/66757 ,  H01L29/786 ,  H01L29/78633 ,  H01L29/7869

Abstract: A thin film transistor substrate includes a base substrate, an active pattern disposed on the base substrate, a gate insulation pattern disposed on the active pattern, a gate electrode disposed on the gate insulation pattern and overlapping the channel, and a light-blocking pattern disposed between the base substrate and the active pattern and having a size greater than the active pattern. The active pattern includes a source electrode, a drain electrode, and a channel disposed between the source electrode and the drain electrode.

公开(公告)号：US20140145177A1

公开(公告)日：2014-05-29

申请号：US13828990

申请日：2013-03-14

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Ji-Seon LEE ,  Dong-Jo KIM ,  Yoon-Ho KHANG ,  Yong-Su LEE ,  Jong-Chan LEE

IPC: H01L33/08

CPC classification number: H01L27/1225 ,  H01L27/1222 ,  H01L27/124 ,  H01L29/7869 ,  H01L29/78696

Abstract: A thin film transistor substrate includes the following elements: a base substrate, a data line disposed on the base substrate, a source electrode contacting the data line, a drain electrode spaced from the source electrode, a channel disposed between the source electrode and the drain electrode, a pixel electrode electrically connected to the drain electrode, a gate insulation pattern disposed on the channel, and a gate electrode disposed on the gate insulation pattern.

Abstract translation: 薄膜晶体管基板包括以下元件：基底基板，设置在基底基板上的数据线，与数据线接触的源电极，与源电极间隔开的漏电极，设置在源极和漏极之间的沟道 电连接到漏电极的像素电极，设置在沟道上的栅极绝缘图案，以及设置在栅极绝缘图案上的栅电极。

公开(公告)号：US20170031642A1

公开(公告)日：2017-02-02

申请号：US15015159

申请日：2016-02-04

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jong-Chan LEE ,  So-Young KOO ,  Myoung-Geun CHA ,  Yoon-Ho KHANG ,  Myoung-Hwa KIM ,  Woong-Hee JEONG

IPC: G06F3/14 ,  G09G3/3208

CPC classification number: G06F3/1446 ,  G09G3/20 ,  G09G2300/026 ,  G09G2310/0232 ,  G09G2320/0233

Abstract: A blind display device includes a plurality of curved display panels, a support, and a plurality of rotators. Each of the curved display panels includes a curved display area between a flat display area and a bezel area. The support guides movement of the curved display panels. The rotators couple corresponding ones of the curved display panels to the support and rotate corresponding ones of the curved display panels.

Abstract translation: 盲目显示装置包括多个弯曲显示面板，支撑件和多个旋转器。 每个弯曲显示面板包括在平坦显示区域和边框区域之间的弯曲显示区域。 支架引导弯曲显示面板的运动。 旋转体将对应的弯曲显示面板耦合到支撑件并旋转相应的弯曲显示面板。

公开(公告)号：US20130200404A1

公开(公告)日：2013-08-08

申请号：US13761930

申请日：2013-02-07

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yong-Su LEE ,  Yoon-Ho KHANG ,  Se-Hwan YU ,  Dong-Jo KIM ,  Min-Jung LEE

IPC: H01L27/15

CPC classification number: H01L27/156 ,  G02F1/13458 ,  G02F1/136213 ,  G02F1/136227 ,  G02F2001/136295 ,  H01L27/124 ,  H01L27/1244 ,  H01L27/1248

Abstract: A thin film transistor display panel includes: a gate electrode, a source electrode and a drain electrode which are included in a thin film transistor on a substrate; a data line connected to the source electrode; a pixel link member connecting the drain electrode to a pixel electrode; and a gate pad connected to the gate electrode through a gate line and including a first gate subpad, a second gate subpad and a gate pad link member, in which the pixel link member and the gate pad link member are substantially same in thickness.

Abstract translation: 薄膜晶体管显示面板包括：栅电极，源电极和漏电极，其包括在基板上的薄膜晶体管中; 连接到源电极的数据线; 将漏电极连接到像素电极的像素连接构件; 以及栅极焊盘，其通过栅极线连接到栅电极，并且包括第一栅极子板，第二栅极子板和栅极焊盘连接部件，其中像素连接部件和栅极焊盘连接部件的厚度基本相同。

公开(公告)号：US20160064571A1

公开(公告)日：2016-03-03

申请号：US14939564

申请日：2015-11-12

Applicant: Samsung Display Co., Ltd.

Inventor： Yong-Su LEE ,  Yoon-Ho KHANG ,  Se-Hwan YU ,  Su-Hyoung KANG

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/45

CPC classification number: H01L29/78642 ,  H01L29/41733 ,  H01L29/41741 ,  H01L29/41775 ,  H01L29/45 ,  H01L29/66666 ,  H01L29/6675 ,  H01L29/78606 ,  H01L29/7869

Abstract: A thin film transistor including a gate electrode, a semiconductor layer, a gate insulating layer, a source electrode, a drain electrode and a graphene pattern. The semiconductor layer overlaps with the gate electrode. The gate insulating layer is disposed between the gate electrode and the semiconductor layer. The source electrode overlaps with the semiconductor layer. The drain electrode overlaps with the semiconductor layer. The drain electrode is spaced apart from the source electrode. The graphene pattern is disposed between the semiconductor layer and at least one of the source electrode and the drain electrode.

公开(公告)号：US20150162420A1

公开(公告)日：2015-06-11

申请号：US14623693

申请日：2015-02-17

Applicant: Samsung Display Co., Ltd.

Inventor： Sang-Ho PARK ,  Su-Hyoung KANG ,  Dong-Hwan SHIM ,  Yoon-Ho KHANG ,  Se-Hwan YU ,  Min-Jung LEE ,  Yong-Su LEE

IPC: H01L29/66 ,  H01L21/28

CPC classification number: H01L27/127 ,  H01L21/28008 ,  H01L27/124 ,  H01L27/1262 ,  H01L29/66742 ,  H01L29/66757 ,  H01L29/786 ,  H01L29/78633 ,  H01L29/7869

Abstract: A thin film transistor substrate includes a base substrate, an active pattern disposed on the base substrate, a gate insulation pattern disposed on the active pattern, a gate electrode disposed on the gate insulation pattern and overlapping the channel, and a light-blocking pattern disposed between the base substrate and the active pattern and having a size greater than the active pattern. The active pattern includes a source electrode, a drain electrode, and a channel disposed between the source electrode and the drain electrode.

Abstract translation: 薄膜晶体管基板包括基底基板，设置在基底基板上的有源图案，设置在有源图案上的栅极绝缘图案，设置在栅极绝缘图案上并与沟道重叠的栅电极，以及布置的阻光图案 在基底基板和活性图案之间并且具有大于活性图案的尺寸。 有源图案包括源电极，漏电极和设置在源电极和漏极之间的沟道。

公开(公告)号：US20150069401A1

公开(公告)日：2015-03-12

申请号：US14152027

申请日：2014-01-10

Applicant: Samsung Display Co., LTD.

Inventor： Hyun-Jae NA ,  Myoung-Geun CHA ,  Yoon-Ho KHANG

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/66742 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1288 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869

Abstract: A thin film transistor substrate includes a base substrate, an active pattern provided on the base substrate and including a source electrode, a drain electrode and a channel between the source electrode and the drain electrode, a gate insulation layer provided on the active pattern, a gate electrode which is provided on the active pattern and overlaps the channel, a first contact pad disposed on at least one of the source electrode and the drain electrode and including a first metal, and a first non-conductive metal oxide layer on the base substrate to cover the gate electrode and including the first metal.

Abstract translation: 薄膜晶体管基板包括基底基板，设置在基底基板上的有源图案，包括源电极，漏电极和源电极与漏电极之间的沟道，设置在有源图案上的栅极绝缘层， 栅极电极，设置在有源图案上并与沟道重叠;第一接触焊盘，其设置在源电极和漏电极中的至少一个上，并且包括第一金属，以及在基底基板上的第一非导电金属氧化物层 以覆盖栅电极并且包括第一金属。