公开(公告)号：US10205861B2

公开(公告)日：2019-02-12

申请号：US14719850

申请日：2015-05-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sanghun Lee ,  Changyoung Park ,  Yonghwa Park

IPC: G02F1/015 ,  H04N5/225 ,  G02F1/017

Abstract: A transmissive optical shutter and a method of fabricating the same are provided. The transmissive optical shutter includes a first contact layer, an epitaxial layer disposed over the first contact layer, the epitaxial layer being configured to modulate intensity of incident light having a specific wavelength, a second contact layer disposed on the epitaxial layer, a first electrode disposed on the first contact layer, at least one second electrode disposed on the second contact layer, and a substrate disposed under the first contact layer.

公开(公告)号：US11626529B2

公开(公告)日：2023-04-11

申请号：US17173339

申请日：2021-02-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changyoung Park ,  Sanghun Lee

IPC: H01L31/103 ,  H01L31/0216 ,  H01L31/18

Abstract: A light detecting device includes a light absorbing layer configured to absorb light in a wavelength range from visible light to short-wave infrared (SWIR); a first semiconductor layer provided on a first surface of the light absorbing layer; an anti-reflective layer provided on the first semiconductor layer and comprising a material having etch selectivity with respect to the first semiconductor layer; and a second semiconductor layer provided on a second surface of the light absorbing layer. The first semiconductor layer has a thickness less than 500 nm so as to be configured to allow light to transmit therethrough in the wavelength range from visible light to SWIR.

公开(公告)号：US09769456B2

公开(公告)日：2017-09-19

申请号：US14699068

申请日：2015-04-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jangwoo You ,  Byunghoon Na ,  Yonghwa Park ,  Changyoung Park ,  Heesun Yoon ,  Sanghun Lee ,  Myungjae Jeon

IPC: H04N13/02 ,  G01S17/06 ,  G01S17/02 ,  G01S17/89 ,  G01S7/481

CPC classification number: H04N13/204 ,  G01S7/4816 ,  G01S17/023 ,  G01S17/06 ,  G01S17/89 ,  H04N13/254 ,  H04N13/286 ,  H04N13/289

Abstract: A depth image measuring camera includes an illumination device configured to irradiate an object with light, and a light-modulating optical system configured to receive the light reflected from the object. The depth image measuring camera includes an image sensor configured to generate an image of the object by receiving light incident on the image sensor that passes through the light-modulating optical system. The light-modulating optical system includes a plurality of lenses having a same optical axis, and an optical modulator configured to operate in two modes for measuring a depth of the object.

公开(公告)号：US11476385B2

公开(公告)日：2022-10-18

申请号：US16884674

申请日：2020-05-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byunghoon Na ,  Changyoung Park ,  Yonghwa Park

IPC: H01L33/04 ,  H01L33/06 ,  G02F1/017 ,  H01L33/30 ,  H01L33/60

Abstract: Provided is an optical device including an active layer, which includes two outer barriers and a coupled quantum well between the two outer barriers. The coupled quantum well includes a first quantum well layer, a second quantum well layer, a third quantum well layer, a first coupling barrier between the first quantum well layer and the second quantum well layer, and a second coupling barrier between the second quantum well layer and the third quantum well layer. The second quantum well layer is between the first quantum well layer and the third quantum well layer. An energy band gap of the second quantum well layer is less than an energy band gap of the first quantum well layer, and an energy band gap of the third quantum well layer is equal to or less than the energy band gap of the second quantum well layer.

公开(公告)号：US20220181519A1

公开(公告)日：2022-06-09

申请号：US17217552

申请日：2021-03-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changyoung Park ,  Sanghun Lee

IPC: H01L33/30 ,  H01L33/04 ,  H01L33/58 ,  H01L33/00

Abstract: An optical device includes a multilayered GaAs structure including a plurality of sublayers and an optical structure layer on the multilayered GaAs structure, the optical structure layer including a Group III-V compound semiconductor material. The optical structure layer may be, for example, a light-emitting layer having a multi-quantum well structure.

公开(公告)号：US11201256B2

公开(公告)日：2021-12-14

申请号：US16918485

申请日：2020-07-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changyoung Park ,  Sanghun Lee

IPC: H01L33/00 ,  H01L21/00 ,  H01L31/107 ,  H01L31/0352 ,  H01L31/105

Abstract: Provided are an infrared detecting device and an infrared detecting system including the infrared detecting device. The infrared detecting device includes at least one infrared detector, and the at least one infrared detector includes a substrate, a buffer layer, and at least one light absorbing portion. The buffer layer includes a superlattice structure.

公开(公告)号：US20190245001A1

公开(公告)日：2019-08-08

申请号：US16384014

申请日：2019-04-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changyoung Park ,  Sanghun Lee

IPC: H01L27/146 ,  H01L31/0304 ,  G01J5/04 ,  G01N21/3554 ,  A61B5/00 ,  H01L31/109 ,  G01J1/44 ,  H01L31/0224 ,  H01L31/0352 ,  G01J5/08 ,  H01L31/105 ,  H01L31/101 ,  H01L31/0384 ,  G01J5/02 ,  B82Y20/00

CPC classification number: H01L27/14649 ,  A61B5/443 ,  B82Y20/00 ,  G01J1/44 ,  G01J5/024 ,  G01J5/046 ,  G01J5/0853 ,  G01J2001/4446 ,  G01N21/3554 ,  H01L27/146 ,  H01L27/14669 ,  H01L27/14694 ,  H01L31/022466 ,  H01L31/03046 ,  H01L31/035218 ,  H01L31/035236 ,  H01L31/03845 ,  H01L31/1013 ,  H01L31/105 ,  H01L31/109

Abstract: An infrared detector and an infrared sensor including the infrared detector are provided. The infrared detector includes a plurality of quantum dots spaced apart from each other and including a first component, a first semiconductor layer covering the plurality of quantum dots, and a second semiconductor layer covering the first semiconductor layer.

公开(公告)号：US11817527B2

公开(公告)日：2023-11-14

申请号：US17217552

申请日：2021-03-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changyoung Park ,  Sanghun Lee

IPC: H01L33/30 ,  H01L33/00 ,  H01L33/58 ,  H01L33/04

CPC classification number: H01L33/30 ,  H01L33/0066 ,  H01L33/04 ,  H01L33/58

Abstract: An optical device includes a multilayered GaAs structure including a plurality of sublayers and an optical structure layer on the multilayered GaAs structure, the optical structure layer including a Group III-V compound semiconductor material. The optical structure layer may be, for example, a light-emitting layer having a multi-quantum well structure.

公开(公告)号：US20230170430A1

公开(公告)日：2023-06-01

申请号：US17734414

申请日：2022-05-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changyoung Park ,  Sanghun Lee

IPC: H01L31/0392 ,  H01L31/0304 ,  H01L31/107 ,  H01L31/18

CPC classification number: H01L31/0392 ,  H01L31/0304 ,  H01L31/107 ,  H01L31/1852

Abstract: Provided is a high-quality substrate including a silicon layer, a multilayer buffer layer on the silicon layer, and an indium phosphide (InP) layer on the multilayer buffer layer, wherein a crystal growth direction of the silicon layer is a direction inclined by 1° to 10° with respect to a vertical direction, and wherein the multilayer buffer layer includes a buffer layer in which a crystal growth direction is inclined with respect to the vertical direction.

公开(公告)号：US20230085092A1

公开(公告)日：2023-03-16

申请号：US17976419

申请日：2022-10-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changyoung Park ,  Sanghun Lee

IPC: H01L33/30 ,  H01L33/00 ,  H01L33/58 ,  H01L33/04

Abstract: An optical device includes a multilayered GaAs structure including a plurality of sublayers and an optical structure layer on the multilayered GaAs structure, the optical structure layer including a Group III-V compound semiconductor material. The optical structure layer may be, for example, a light-emitting layer having a multi-quantum well structure.