Semiconductor memory device
    5.
    发明授权

    公开(公告)号:US10964720B2

    公开(公告)日:2021-03-30

    申请号:US17028047

    申请日:2020-09-22

    Abstract: A semiconductor memory device including a substrate including a first block and a second block each having a cell array region and a connection region, a stack including insulating layers and gate electrodes and extending from the cell array region to the connection region, first cell channel structures in the cell array region of the first block and passing through the stack to be electrically connected to the substrate, first dummy channel structures in the connection region of the first block and passing through the stack, second cell channel structures in the cell array region of the second block and passing through the stack, and second dummy channel structures in the connection region of the second block and passing through the stack may be provided. The first dummy channel structures are electrically insulated from the substrate, while the second dummy channel structures are electrically connected to the substrate.

    VERTICAL MEMORY DEVICE
    9.
    发明申请

    公开(公告)号:US20190115366A1

    公开(公告)日:2019-04-18

    申请号:US16212240

    申请日:2018-12-06

    Abstract: A vertical memory device is provided as follows. A substrate has a cell array region and a connection region adjacent to the cell array region. A first gate stack includes gate electrode layers spaced apart from each other in a first direction perpendicular to the substrate. The gate electrode layers extends from the cell array region to the connection region in a second direction perpendicular to the first direction to form a first stepped structure on the connection region. The first stepped structure includes a first gate electrode layer and a second gate electrode layer sequentially stacked. The second gate electrode layer includes a first region having the same length as a length of the first gate electrode layer and a second region having a shorter length than the length of the first gate electrode layer.

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