公开(公告)号：US09773672B2

公开(公告)日：2017-09-26

申请号：US15016309

申请日：2016-02-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Su-min Kim ,  Hyun-woo Kim ,  Hyo-jin Yun ,  Kyoung-seon Kim ,  Hai-sub Na ,  Su-min Park ,  So-ra Han

IPC: H01L21/027 ,  H01L21/033 ,  H01L21/311 ,  H01L21/3105 ,  H01L21/3213 ,  H01L21/28 ,  H01L21/02

CPC classification number: H01L21/0276 ,  G03F7/091 ,  G03F7/325 ,  G03F7/38 ,  G03F7/40 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02326 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/28273 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/32139

Abstract: A method of manufacturing a semiconductor device, including forming an etching target film on a substrate; forming an anti-reflection film on the etching target film; forming a photoresist film on the anti-reflection film; exposing the photoresist film; performing heat treatment on the anti-reflection film and the photoresist film to form a covalent bond between the anti-reflection film and the photoresist film; and developing the photoresist film.

公开(公告)号：US10468250B2

公开(公告)日：2019-11-05

申请号：US15337145

申请日：2016-10-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ju-young Kim ,  Jeong-ju Park ,  Jin Park ,  Hai-sub Na

IPC: G03F7/40 ,  H01L21/033 ,  C11D1/00 ,  C11D11/00 ,  H01L21/027 ,  G03F7/42

Abstract: A rinse solution includes a surfactant and deionized water. The surfactant includes a compound having a branched structure, the compound having a branched structure including a hydrophobic group-containing main chain and a plurality of side chains that are branched from the main chain and have at least one hydrophilic functional group. A method of fabricating an integrated circuit device includes forming a photoresist pattern, followed by applying the rinse solution onto the photoresist pattern.

公开(公告)号：US10062571B2

公开(公告)日：2018-08-28

申请号：US15342151

申请日：2016-11-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyun-chul Yoon ,  Kyoung-seon Kim ,  Hai-sub Na ,  Jin Park

IPC: H01L21/02 ,  H01L21/033 ,  H01L21/027 ,  H01L21/3213 ,  H01L27/11582 ,  H01L21/311 ,  H01L21/3105

CPC classification number: H01L21/0337 ,  H01L21/02118 ,  H01L21/02282 ,  H01L21/02299 ,  H01L21/02318 ,  H01L21/02345 ,  H01L21/0273 ,  H01L21/0332 ,  H01L21/0338 ,  H01L21/3105 ,  H01L21/31133 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32139 ,  H01L27/11582 ,  H01L28/00

Abstract: A method of manufacturing a semiconductor device includes forming a feature layer on a substrate, forming a plurality of reference patterns, arranged at a first pitch, on the feature layer, forming an organic liner on a side wall of each of the plurality of reference patterns, forming a plurality of buried patterns on the organic liner, removing the organic liner exposed between the plurality of buried patterns and the plurality of reference patterns, and etching the feature layer by using the plurality of buried patterns and the plurality of reference patterns as etch masks to form a feature pattern. Each of the plurality of buried patterns covers a space between side walls of two adjacent reference patterns among the plurality of reference patterns.