Dicing blade including diamond particles

    公开(公告)号:US12208541B2

    公开(公告)日:2025-01-28

    申请号:US17746454

    申请日:2022-05-17

    Abstract: A dicing blade includes: a first blade portion and a second blade portion at least partially surrounding the first blade portion, wherein the first blade portion includes: a first bonding layer; first diamond particles disposed in the first bonding layer and having a first density in the first bonding layer; and first metal particles disposed in the first bonding layer, and wherein the second blade portion includes: a second bonding layer at least partially surrounding the first bonding layer; and second diamond particles disposed in the second bonding layer and having a second density in the second bonding layer, wherein the second density is higher than the first density.

    SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR PACKAGE

    公开(公告)号:US20240429146A1

    公开(公告)日:2024-12-26

    申请号:US18639148

    申请日:2024-04-18

    Abstract: A semiconductor package includes a lower substrate that includes a chip mounting region and a peripheral region, where the lower substrate includes lower redistribution wirings; a first semiconductor chip on the chip mounting region, where the first semiconductor chip includes: a silicon substrate that includes a first surface and a second surface that are opposite to each other, an activation layer on the second surface, and a chip redistribution wiring layer that is on the first surface and includes a plurality of chip redistribution wirings that are electrically insulated from the activation layer; a plurality of connecting members that are on the peripheral region and are electrically connected to the lower redistribution wirings; and an upper substrate on the plurality of connecting members, and where at least a portion of the first semiconductor chip is in a through cavity defined by the upper substrate.

Patent Agency Ranking