公开(公告)号：US09685450B2

公开(公告)日：2017-06-20

申请号：US15072521

申请日：2016-03-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki-Yeon Park ,  Jae-Hyoung Choi ,  Vladimir Urazaev ,  Jin-Ha Jeong

IPC: H01L21/20 ,  H01L27/108 ,  H01L49/02 ,  H01L21/283 ,  H01L21/311 ,  H01L21/768

CPC classification number: H01L27/1085 ,  H01L21/283 ,  H01L21/311 ,  H01L21/76802 ,  H01L27/108 ,  H01L27/10852 ,  H01L28/60 ,  H01L28/92

Abstract: Provided are semiconductor devices and methods of fabricating the same. The methods may include forming a molding layer on a semiconductor substrate. A storage electrode passing through the molding layer is formed. A part of the storage electrode is exposed by partially etching the molding layer. A sacrificial oxide layer is formed by oxidizing the exposed part of the storage electrode. The partially-etched molding layer and the sacrificial oxide layer are removed. A capacitor dielectric layer is formed on the substrate of which the molding layer and the sacrificial oxide layer are removed. A plate electrode is formed on the capacitor dielectric layers.

公开(公告)号：US09893142B2

公开(公告)日：2018-02-13

申请号：US15083688

申请日：2016-03-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Se-Hyoung Ahn ,  Young-Geun Park ,  Jong-Bom Seo ,  Jae-Hyoung Choi

IPC: H01L21/20 ,  H01L49/02 ,  H01L27/108 ,  H01L21/02

CPC classification number: H01L28/40 ,  H01L21/02148 ,  H01L21/02159 ,  H01L21/02161 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/02271 ,  H01L21/0228 ,  H01L27/10852

Abstract: A method of manufacturing a semiconductor device includes forming a lower metal layer, forming an interfacial oxide film on the lower metal layer, providing a metal precursor on the interfacial oxide film at a first pressure to adsorb the metal precursor into the interfacial oxide film, performing a first purge process at a second pressure to remove the unadsorbed metal precursor, the second pressure lower than the first pressure, providing an oxidizing gas at the first pressure to react with the adsorbed metal precursor, performing a second purge process at the second pressure to remove the unreacted oxidizing gas and form a dielectric film, and forming an upper metal layer on the dielectric film.

公开(公告)号：US20150243727A1

公开(公告)日：2015-08-27

申请号：US14708423

申请日：2015-05-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki-Yeon Park ,  Jae-Hyoung Choi ,  Vladimir Urazaev ,  Jin-Ha Jeong

IPC: H01L49/02 ,  H01L27/108

CPC classification number: H01L27/1085 ,  H01L21/283 ,  H01L21/311 ,  H01L21/76802 ,  H01L27/108 ,  H01L27/10852 ,  H01L28/60 ,  H01L28/92

Abstract: Provided are semiconductor devices and methods of fabricating the same. The methods may include forming a molding layer on a semiconductor substrate. A storage electrode passing through the molding layer is formed. A part of the storage electrode is exposed by partially etching the molding layer. A sacrificial oxide layer is formed by oxidizing the exposed part of the storage electrode. The partially-etched molding layer and the sacrificial oxide layer are removed. A capacitor dielectric layer is formed on the substrate of which the molding layer and the sacrificial oxide layer are removed. A plate electrode is formed on the capacitor dielectric layers.

Abstract translation: 提供半导体器件及其制造方法。 所述方法可以包括在半导体衬底上形成模塑层。 形成通过成形层的存储电极。 存储电极的一部分通过部分蚀刻成型层而露出。 通过氧化存储电极的暴露部分形成牺牲氧化物层。 去除部分蚀刻的成型层和牺牲氧化物层。 在其上移除成型层和牺牲氧化物层的基板上形成电容器电介质层。 在电容器电介质层上形成平板电极。

公开(公告)号：US20140256112A1

公开(公告)日：2014-09-11

申请号：US14193071

申请日：2014-02-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki-Yeon Park ,  Jae-Hyoung Choi ,  Vladimir Urazaev ,  Jin-Ha Jeong

IPC: H01L49/02

CPC classification number: H01L27/1085 ,  H01L21/283 ,  H01L21/311 ,  H01L21/76802 ,  H01L27/108 ,  H01L27/10852 ,  H01L28/60 ,  H01L28/92

Abstract: Provided are semiconductor devices and methods of fabricating the same. The methods may include forming a molding layer on a semiconductor substrate. A storage electrode passing through the molding layer is formed. A part of the storage electrode is exposed by partially etching the molding layer. A sacrificial oxide layer is formed by oxidizing the exposed part of the storage electrode. The partially-etched molding layer and the sacrificial oxide layer are removed. A capacitor dielectric layer is formed on the substrate of which the molding layer and the sacrificial oxide layer are removed. A plate electrode is formed on the capacitor dielectric layers.

Abstract translation: 提供半导体器件及其制造方法。 所述方法可以包括在半导体衬底上形成模塑层。 形成通过成形层的存储电极。 存储电极的一部分通过部分蚀刻成型层而露出。 通过氧化存储电极的暴露部分形成牺牲氧化物层。 去除部分蚀刻的成型层和牺牲氧化物层。 在其上移除成型层和牺牲氧化物层的基板上形成电容器电介质层。 在电容器电介质层上形成平板电极。

公开(公告)号：US09685498B2

公开(公告)日：2017-06-20

申请号：US15201704

申请日：2016-07-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Yeol Kang ,  Suk-Jin Chung ,  Youn-Soo Kim ,  Jae-Hyoung Choi ,  Jae-Soon Lim ,  Min-Young Park

IPC: H01L49/02 ,  H01L21/02 ,  H01L21/28 ,  H01L29/51 ,  H01L27/108 ,  H01L29/78

CPC classification number: H01L28/60 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/28194 ,  H01L27/10808 ,  H01L27/10814 ,  H01L27/10855 ,  H01L28/40 ,  H01L29/517 ,  H01L29/78

Abstract: To form a dielectric layer, an organometallic precursor is adsorbed on a substrate loaded into a process chamber. The organometallic precursor includes a central metal and ligands bound to the central metal. An inactive oxidant is provided onto the substrate. The inactive oxidant is reactive with the organometallic precursor. An active oxidant is also provided onto the substrate. The active oxidant has a higher reactivity than that of the inactive oxidant.

公开(公告)号：US09324781B2

公开(公告)日：2016-04-26

申请号：US14708423

申请日：2015-05-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki-Yeon Park ,  Jae-Hyoung Choi ,  Vladimir Urazaev ,  Jin-Ha Jeong

IPC: H01L21/20 ,  H01L49/02 ,  H01L27/108

CPC classification number: H01L27/1085 ,  H01L21/283 ,  H01L21/311 ,  H01L21/76802 ,  H01L27/108 ,  H01L27/10852 ,  H01L28/60 ,  H01L28/92

Abstract: Provided are semiconductor devices and methods of fabricating the same. The methods may include forming a molding layer on a semiconductor substrate. A storage electrode passing through the molding layer is formed. A part of the storage electrode is exposed by partially etching the molding layer. A sacrificial oxide layer is formed by oxidizing the exposed part of the storage electrode. The partially-etched molding layer and the sacrificial oxide layer are removed. A capacitor dielectric layer is formed on the substrate of which the molding layer and the sacrificial oxide layer are removed. A plate electrode is formed on the capacitor dielectric layers.

公开(公告)号：US09059331B2

公开(公告)日：2015-06-16

申请号：US14193071

申请日：2014-02-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki-Yeon Park ,  Jae-Hyoung Choi ,  Vladimir Urazaev ,  Jin-Ha Jeong

IPC: H01L21/20 ,  H01L49/02 ,  H01L27/108

CPC classification number: H01L27/1085 ,  H01L21/283 ,  H01L21/311 ,  H01L21/76802 ,  H01L27/108 ,  H01L27/10852 ,  H01L28/60 ,  H01L28/92

Abstract: Provided are semiconductor devices and methods of fabricating the same. The methods may include forming a molding layer on a semiconductor substrate. A storage electrode passing through the molding layer is formed. A part of the storage electrode is exposed by partially etching the molding layer. A sacrificial oxide layer is formed by oxidizing the exposed part of the storage electrode. The partially-etched molding layer and the sacrificial oxide layer are removed. A capacitor dielectric layer is formed on the substrate of which the molding layer and the sacrificial oxide layer are removed. A plate electrode is formed on the capacitor dielectric layers.

Abstract translation: 提供半导体器件及其制造方法。 所述方法可以包括在半导体衬底上形成模塑层。 形成通过成型层的存储电极。 存储电极的一部分通过部分蚀刻成型层而露出。 通过氧化存储电极的暴露部分形成牺牲氧化物层。 去除部分蚀刻的成型层和牺牲氧化物层。 在其上移除成型层和牺牲氧化物层的基板上形成电容器电介质层。 在电容器电介质层上形成平板电极。