公开(公告)号：US20140199796A1

公开(公告)日：2014-07-17

申请号：US14150713

申请日：2014-01-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Hun KIM ,  Sung Joon KIM ,  Su Yeol LEE ,  Seung Hwan LEE ,  Tae Sung JANG

IPC: H01L33/46 ,  H01L21/78 ,  H01L33/52

CPC classification number: H01L21/78 ,  H01L24/18 ,  H01L33/52 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014

Abstract: A method of manufacturing a semiconductor light emitting device includes forming a plurality of semiconductor light emitting devices on a substrate, the semiconductor light emitting devices having at least one electrode pad formed on upper surfaces thereof; forming a conductive bump by forming a bump core on the electrode pad of each of the semiconductor light emitting devices and forming a reflective bump layer enclosing the bump core; forming a resin encapsulating part containing a phosphor on the plurality of semiconductor light emitting devices to encompass the conductive bump; polishing the resin encapsulating part to expose the bump core of the conductive bump to an upper surface of the resin encapsulating part; and forming individual semiconductor light emitting devices by cutting the resin encapsulating part between the semiconductor light emitting devices.

Abstract translation: 一种制造半导体发光器件的方法包括在衬底上形成多个半导体发光器件，所述半导体发光器件具有形成在其上表面上的至少一个电极焊盘; 通过在每个半导体发光器件的电极焊盘上形成凸起芯，形成一个导电凸块，并形成一个包围凸块的反射凸块; 在所述多个半导体发光器件上形成含有荧光体的树脂封装部，以包围所述导电凸块; 抛光树脂封装部分以将导电凸块的凸起芯露出到树脂封装部分的上表面; 以及通过在半导体发光器件之间切割树脂封装部分来形成单独的半导体发光器件。

公开(公告)号：US20170040515A1

公开(公告)日：2017-02-09

申请号：US15184737

申请日：2016-06-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin Bock LEE ,  Su Yeol LEE ,  Dong Hyuk JOO

IPC: H01L33/62 ,  H01L33/38 ,  H01L33/50 ,  H01L27/15 ,  H01L33/00 ,  H01L33/56 ,  H01L33/20 ,  H01L33/32

CPC classification number: H01L33/62 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/382 ,  H01L33/42 ,  H01L33/44 ,  H01L33/502 ,  H01L33/54 ,  H01L2224/16245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48237 ,  H01L2924/181 ,  H01L2933/0016 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A semiconductor light emitting device is provided. The device includes a semiconductor stack, insulating layers, a current spreading layer, and first and second finger electrodes. The semiconductor stack includes a first and second conductivity-type semiconductor layers, an active layer between the first and second conductivity-type semiconductor layers, and a trench penetrating through the second conductivity-type semiconductor layer and the active layer to expose a portion of the first conductivity-type semiconductor layer. A first insulating layer is disposed on an inner sidewall of the trench. The current spreading layer is disposed on the second conductivity-type semiconductor layer. The first finger electrode is disposed on the exposed portion of the first conductivity-type semiconductor layer. The second insulating layer is disposed on the exposed portion of the first conductivity-type semiconductor layer to cover the first finger electrode. The second finger electrode is disposed in the trench and connected to the current spreading layer.

Abstract translation: 提供半导体发光器件。 该器件包括半导体叠层，绝缘层，电流扩展层以及第一和第二指状电极。 半导体堆叠包括第一和第二导电类型半导体层，第一和第二导电类型半导体层之间的有源层和穿过第二导电类型半导体层和有源层的沟槽，以暴露部分 第一导电型半导体层。 第一绝缘层设置在沟槽的内侧壁上。 电流扩散层设置在第二导电型半导体层上。 第一指状电极设置在第一导电型半导体层的露出部分上。 第二绝缘层设置在第一导电类型半导体层的暴露部分上以覆盖第一指状电极。 第二指状电极设置在沟槽中并连接到电流扩散层。

公开(公告)号：US20140117392A1

公开(公告)日：2014-05-01

申请号：US13948797

申请日：2013-07-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae Hun KIM ,  Sung Joon KIM ,  Yong Il KIM ,  Yung Ho RYU ,  Myeong Rak SON ,  Su Yeol LEE ,  Seung Hwan LEE ,  Tae Sung JANG ,  Su Min HWANGBO

IPC: H01L33/60

CPC classification number: H01L33/007 ,  H01L33/0079

Abstract: A method for manufacturing a semiconductor light emitting device includes forming an isolation pattern on a semiconductor single crystal growth substrate. A first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer are sequentially grown in one chip unit region of the semiconductor single crystal growth substrate defined by the isolation pattern, and a reflective metal layer is formed to cover the light emitting structure and the isolation pattern. A support substrate is formed on the reflective metal layer, and the semiconductor single crystal growth substrate is removed from the light emitting structure. The support substrate is then cut into individual light emitting devices.

Abstract translation: 一种制造半导体发光器件的方法包括在半导体单晶生长衬底上形成隔离图案。 在由隔离图案限定的半导体单晶生长基板的一个芯片单元区域中依次生长第一导电型半导体层，有源层和第二导电型半导体层，并且形成反射金属层以覆盖 发光结构和隔离图案。 在反射金属层上形成支撑基板，从发光结构去除半导体单晶生长基板。 然后将支撑衬底切割成单个发光器件。

公开(公告)号：US20150140707A1

公开(公告)日：2015-05-21

申请号：US14607851

申请日：2015-01-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae Yoon KIM ,  Jin Bock LEE ,  Seok Min HWANG ,  Su Yeol LEE

IPC: H01L33/00

CPC classification number: H01L33/005 ,  H01L33/32 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L2933/0016 ,  H01L2933/0058

Abstract: A semiconductor light emitting device includes: a light emission structure in which a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer are sequentially stacked; a first electrode formed on the first conductive semiconductor layer; an insulating layer formed on the second conductive semiconductor layer and made of a transparent material; a reflection unit formed on the insulating layer and reflecting light emitted from the active layer; a second electrode formed on the reflection unit; and a transparent electrode formed on the second conductive semiconductor layer, the transparent electrode being in contact with the insulating layer and the second electrode.

Abstract translation: 半导体发光器件包括：发光结构，其中第一导电半导体层，有源层和第二导电半导体层顺序地堆叠; 形成在所述第一导电半导体层上的第一电极; 形成在所述第二导电半导体层上并由透明材料制成的绝缘层; 反射单元，形成在所述绝缘层上并反射从所述有源层发射的光; 形成在反射单元上的第二电极; 以及形成在所述第二导电半导体层上的透明电极，所述透明电极与所述绝缘层和所述第二电极接触。