公开(公告)号：US20170077353A1

公开(公告)日：2017-03-16

申请号：US15092695

申请日：2016-04-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Joon KIM ,  Young Ho RYU ,  Min Wook CHOI

IPC: H01L33/38 ,  H01L33/14 ,  H01L33/42 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01L33/382 ,  H01L33/06 ,  H01L33/145 ,  H01L33/32 ,  H01L33/42 ,  H01L33/44 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A semiconductor light emitting device includes a semiconductor stack including a first conductive semiconductor layer including a first surface, a second conductive semiconductor layer including a second surface opposite to the first surface, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and a through hole disposed through the semiconductor stack. The semiconductor light emitting device further includes a contact layer connected to the first conductive semiconductor layer, disposed in the through hole, and disposed through the semiconductor stack, a first electrode layer connected to the contact layer, and a second electrode layer disposed on the second surface, and including a pad forming portion on which the semiconductor stack is not disposed. The semiconductor light emitting device further includes an insulating layer disposed between the first electrode layer and the second electrode layer, and an electrode pad disposed on the pad forming portion.

Abstract translation: 一种半导体发光器件包括：半导体堆叠，包括：第一导电半导体层，包括第一表面;第二导电半导体层，包括与第一表面相对的第二表面;有源层，设置在第一导电半导体层和第二导电半导体之间; 层和穿​​过半导体叠层的通孔。 半导体发光器件还包括连接到第一导电半导体层的接触层，设置在通孔中，并且穿过半导体堆叠布置，连接到接触层的第一电极层和设置在第二导电半导体层上的第二电极层 表面，并且包括不设置半导体叠层的焊盘形成部分。 半导体发光器件还包括设置在第一电极层和第二电极层之间的绝缘层和设置在焊盘形成部分上的电极焊盘。

公开(公告)号：US20200035278A1

公开(公告)日：2020-01-30

申请号：US16372223

申请日：2019-04-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Joon KIM ,  Eun-Jin YUN ,  SANGHOAN CHANG

IPC: G11C8/10 ,  H03K19/173 ,  G11C7/22 ,  G11C16/08 ,  G11C16/26

Abstract: A nonvolatile memory device includes a control logic circuit that receives a read command from outside the nonvolatile memory device, a memory cell array which includes a plurality of memory cells connected to a plurality of word lines, an address generator that generates a plurality of addresses based on read information from the outside of the nonvolatile memory device, an address decoder sequentially selects a plurality of pages in at least one word line, which correspond to the plurality of addresses, a page buffer circuit that is connected to the memory cell array through a plurality of bit lines, and prepares a plurality of sequential data from memory cells connected to the selected pages by the address decoder, and an input/output circuit that continuously outputs the plurality of sequential data from the page buffer circuit to the outside of the nonvolatile memory device through data lines.

公开(公告)号：US20140199796A1

公开(公告)日：2014-07-17

申请号：US14150713

申请日：2014-01-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Hun KIM ,  Sung Joon KIM ,  Su Yeol LEE ,  Seung Hwan LEE ,  Tae Sung JANG

IPC: H01L33/46 ,  H01L21/78 ,  H01L33/52

CPC classification number: H01L21/78 ,  H01L24/18 ,  H01L33/52 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014

Abstract: A method of manufacturing a semiconductor light emitting device includes forming a plurality of semiconductor light emitting devices on a substrate, the semiconductor light emitting devices having at least one electrode pad formed on upper surfaces thereof; forming a conductive bump by forming a bump core on the electrode pad of each of the semiconductor light emitting devices and forming a reflective bump layer enclosing the bump core; forming a resin encapsulating part containing a phosphor on the plurality of semiconductor light emitting devices to encompass the conductive bump; polishing the resin encapsulating part to expose the bump core of the conductive bump to an upper surface of the resin encapsulating part; and forming individual semiconductor light emitting devices by cutting the resin encapsulating part between the semiconductor light emitting devices.

Abstract translation: 一种制造半导体发光器件的方法包括在衬底上形成多个半导体发光器件，所述半导体发光器件具有形成在其上表面上的至少一个电极焊盘; 通过在每个半导体发光器件的电极焊盘上形成凸起芯，形成一个导电凸块，并形成一个包围凸块的反射凸块; 在所述多个半导体发光器件上形成含有荧光体的树脂封装部，以包围所述导电凸块; 抛光树脂封装部分以将导电凸块的凸起芯露出到树脂封装部分的上表面; 以及通过在半导体发光器件之间切割树脂封装部分来形成单独的半导体发光器件。

公开(公告)号：US20140273318A1

公开(公告)日：2014-09-18

申请号：US14207466

申请日：2014-03-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yung Ho RYU ,  Jong Hoon LIM ,  Sung Joon KIM ,  Tae Hun KIM ,  Gyeong Seon PARK ,  Myong Soo CHO

IPC: H01L33/00 ,  B23K1/00

CPC classification number: B23K1/0006 ,  B23K1/0016 ,  B23K35/0238 ,  B23K35/0261 ,  B23K35/0272 ,  B23K35/262 ,  B23K35/264 ,  B23K35/268 ,  B23K35/282 ,  B23K35/3013 ,  B23K35/302 ,  B23K35/3033 ,  B23K35/3046 ,  B23K35/32 ,  B23K35/322 ,  B23K2101/40 ,  B23K2101/42 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L33/0079 ,  H01L2224/29082 ,  H01L2224/29083 ,  H01L2224/29084 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29116 ,  H01L2224/29118 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/29157 ,  H01L2224/29166 ,  H01L2224/29169 ,  H01L2224/29171 ,  H01L2224/29181 ,  H01L2224/29184 ,  H01L2224/83193 ,  H01L2224/83805 ,  H01L2924/01322 ,  H01L2924/1033 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00

Abstract: A method of forming a metal bonding layer includes forming a first bonding metal layer and a second bonding metal layer on surfaces of first and second bonding target objects, respectively. The second bonding target object is disposed on the first bonding target object to allow the first and second bonding metal layers to face each other. A eutectic metal bonding layer is formed through a reaction between the first and second bonding metal layers. At least one of the first and second bonding metal layers includes a reaction delaying layer formed of a metal for delaying the reaction between the first and second bonding metal layers.

Abstract translation: 形成金属接合层的方法包括分别在第一和第二接合目标物体的表面上形成第一接合金属层和第二接合金属层。 第二接合目标物体设置在第一接合目标物体上，以允许第一和第二接合金属层彼此面对。 通过第一和第二接合金属层之间的反应形成共晶金属结合层。 第一和第二接合金属层中的至少一个包括由金属形成的反应延迟层，用于延迟第一和第二接合金属层之间的反应。

公开(公告)号：US20140117392A1

公开(公告)日：2014-05-01

申请号：US13948797

申请日：2013-07-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae Hun KIM ,  Sung Joon KIM ,  Yong Il KIM ,  Yung Ho RYU ,  Myeong Rak SON ,  Su Yeol LEE ,  Seung Hwan LEE ,  Tae Sung JANG ,  Su Min HWANGBO

IPC: H01L33/60

CPC classification number: H01L33/007 ,  H01L33/0079

Abstract: A method for manufacturing a semiconductor light emitting device includes forming an isolation pattern on a semiconductor single crystal growth substrate. A first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer are sequentially grown in one chip unit region of the semiconductor single crystal growth substrate defined by the isolation pattern, and a reflective metal layer is formed to cover the light emitting structure and the isolation pattern. A support substrate is formed on the reflective metal layer, and the semiconductor single crystal growth substrate is removed from the light emitting structure. The support substrate is then cut into individual light emitting devices.

Abstract translation: 一种制造半导体发光器件的方法包括在半导体单晶生长衬底上形成隔离图案。 在由隔离图案限定的半导体单晶生长基板的一个芯片单元区域中依次生长第一导电型半导体层，有源层和第二导电型半导体层，并且形成反射金属层以覆盖 发光结构和隔离图案。 在反射金属层上形成支撑基板，从发光结构去除半导体单晶生长基板。 然后将支撑衬底切割成单个发光器件。