公开(公告)号：US08877634B2

公开(公告)日：2014-11-04

申请号：US13720170

申请日：2012-12-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Woon Shin ,  Bong-Hyun Kim ,  Su-Min Kim ,  Hyo-Jung Kim ,  Chang-Min Park ,  Soo-Jin Hong

IPC: H01L21/4763 ,  H01L21/768 ,  H01L21/308 ,  H01L21/033 ,  H01L27/108 ,  H01L21/311

CPC classification number: H01L21/308 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/76802 ,  H01L21/76816 ,  H01L21/76897 ,  H01L27/10855 ,  H01L27/10885 ,  H01L27/10888

Abstract: The inventive concept provides methods of manufacturing semiconductor devices having a fine pattern. In some embodiments, the methods comprise forming an etch-target film on a substrate, forming a first mask pattern on the etch-target film, forming a second mask pattern by performing an ion implantation process in the first mask pattern, and etching the etch-target film using the second mask pattern.

Abstract translation: 本发明构思提供制造具有精细图案的半导体器件的方法。 在一些实施例中，所述方法包括在衬底上形成蚀刻靶膜，在蚀刻靶膜上形成第一掩模图案，通过在第一掩模图案中执行离子注入工艺形成第二掩模图案，并蚀刻蚀刻 - 使用第二掩模图案的目标膜。

公开(公告)号：US09837272B2

公开(公告)日：2017-12-05

申请号：US15092263

申请日：2016-04-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Su-Min Park ,  Su-Min Kim ,  Hyo-Jin Yun ,  Hyun-Woo Kim ,  Kyoung-Seon Kim ,  Hai-Sub Na ,  Min-Ju Park ,  So-Ra Han

IPC: H01L21/302 ,  H01L21/461 ,  H01B13/00 ,  B23P15/00 ,  C03C25/00 ,  C23F1/00 ,  H01L21/033 ,  H01L21/322 ,  H01L21/426 ,  H01L21/425 ,  H01L21/311 ,  H01L27/108

CPC classification number: H01L21/0337 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/3223 ,  H01L21/425 ,  H01L21/426 ,  H01L27/10855 ,  H01L27/10888

Abstract: In a method of manufacturing a semiconductor device, a mask layer and a first layer may be sequentially formed on a substrate. The first layer may be patterned by a photolithography process to form a first pattern. A silicon oxide layer may be formed on the first pattern. A coating pattern including silicon may be formed on the silicon oxide layer. The mask layer may be etched using a second pattern as an etching mask to form a mask pattern, and the second pattern may includes the first pattern, the silicon oxide layer and the coating pattern. The mask pattern may have a uniform size.

公开(公告)号：USD916746S1

公开(公告)日：2021-04-20

申请号：US29702355

申请日：2019-08-19

Applicant: Samsung Electronics Co., Ltd.

Designer： Min Hyung Kim ,  Su-Min Kim

公开(公告)号：US09482953B2

公开(公告)日：2016-11-01

申请号：US14177278

申请日：2014-02-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Cha-Won Koh ,  Jeon-Il Lee ,  Su-Min Kim ,  Hyun-Woo Kim ,  Jin Park

IPC: G03B27/68 ,  G03F7/20 ,  G03F7/00

CPC classification number: G03F7/2022 ,  G03F7/0002

Abstract: A lithography apparatus and a method of using the same, the apparatus including a stage for accommodating a substrate that has a photoresist film thereon; a main unit on the stage, the main unit being configured to irradiate a projection beam to the photoresist film; and an electric field unit adjacent to the stage, the electric field unit being configured to apply an electric field to the photoresist film, wherein the electric field unit is configured to be turned on at a same time as or before irradiation of the projection beam, and is configured to be turned off at a same time as or after termination of the projection beam.

Abstract translation: 一种光刻设备及其使用方法，该设备包括：用于容纳其上具有光致抗蚀剂膜的基板的台; 主体单元，被配置为向光致抗蚀剂膜照射投影光束; 以及与所述载物台相邻的电场单元，所述电场单元被配置为向所述光致抗蚀剂膜施加电场，其中所述电场单元被配置为在所述投影束的照射之前或之前被接通， 并且被配置为在投影光束的终止之后的同时或者在其终止之后被关闭。

公开(公告)号：USD916747S1

公开(公告)日：2021-04-20

申请号：US29702477

申请日：2019-08-20

Applicant: Samsung Electronics Co., Ltd.

Designer： Min Hyung Kim ,  Su-Min Kim

公开(公告)号：US20130267092A1

公开(公告)日：2013-10-10

申请号：US13720170

申请日：2012-12-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong-Woon Shin ,  Bong-Hyun Kim ,  Su-Min Kim ,  Hyo-Jung Kim ,  Chang-Min Park ,  Soo-Jin Hong

IPC: H01L21/308 ,  H01L21/768

CPC classification number: H01L21/308 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/76802 ,  H01L21/76816 ,  H01L21/76897 ,  H01L27/10855 ,  H01L27/10885 ,  H01L27/10888

Abstract: The inventive concept provides methods of manufacturing semiconductor devices having a fine pattern. In some embodiments, the methods comprise forming an etch-target film on a substrate, forming a first mask pattern on the etch-target film, forming a second mask pattern by performing an ion implantation process in the first mask pattern, and etching the etch-target film using the second mask pattern.

Abstract translation: 本发明构思提供制造具有精细图案的半导体器件的方法。 在一些实施例中，所述方法包括在衬底上形成蚀刻靶膜，在蚀刻靶膜上形成第一掩模图案，通过在第一掩模图案中执行离子注入工艺形成第二掩模图案，并蚀刻蚀刻 - 使用第二掩模图案的目标膜。