公开(公告)号：US09230922B2

公开(公告)日：2016-01-05

申请号：US14180907

申请日：2014-02-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Han-Jin Lim ,  Bong-Hyun Kim ,  Seok-Woo Nam ,  Dong-Woon Shin ,  In-Sang Jeon ,  Soo-Jin Hong

IPC: H01L21/31 ,  H01L23/00 ,  H01L21/28 ,  H01L29/66 ,  H01L29/78 ,  H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  H01L29/51 ,  H01L29/165

CPC classification number: H01L23/564 ,  C23C16/402 ,  C23C16/45553 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/28194 ,  H01L23/562 ,  H01L29/165 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/7848 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A precursor composition for forming a silicon dioxide film on a substrate, the precursor composition including at least one precursor compound represented by the following chemical formulas (1), (2), and (3): HxSiAy(NR1R2)4-x-y  (1) HxSi(NAR3)4-x  (2) HxSi(R4)z(R5)4-x-z  (3) wherein, independently in the chemical formulas (1), (2), and (3), H is hydrogen, x is 0 to 3, Si is silicon, A is a halogen, y is 1 to 4, N is nitrogen, and R1, R2, R3, and R5 are each independently selected from the group of H, aryl, perhaloaryl, C1-8 alkyl, and C1-8 perhaloalkyl, and R4 is aryl in which at least one hydrogen is replaced with a halogen or C1-8 alkyl in which at least one hydrogen is replaced with a halogen.

Abstract translation: 一种用于在基底上形成二氧化硅膜的前体组合物，所述前体组合物包含至少一种由以下化学式（1），（2）和（3）表示的前体化合物：HxSiAy（NR1R2）4-xy（1 ）其中独立地在化学式（1），（2）和（3）中，H是氢，x，x，x，x，y， 为0〜3，Si为硅，A为卤素，y为1〜4，N为氮，R1，R2，R3，R5各自独立地选自H，芳基，全卤代芳基，C1-8 烷基和C 1-8全卤代烷基，R 4是其中至少一个氢被卤素取代的芳基或其中至少一个氢被卤素取代的C 1-8烷基。

公开(公告)号：US20130267092A1

公开(公告)日：2013-10-10

申请号：US13720170

申请日：2012-12-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong-Woon Shin ,  Bong-Hyun Kim ,  Su-Min Kim ,  Hyo-Jung Kim ,  Chang-Min Park ,  Soo-Jin Hong

IPC: H01L21/308 ,  H01L21/768

CPC classification number: H01L21/308 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/76802 ,  H01L21/76816 ,  H01L21/76897 ,  H01L27/10855 ,  H01L27/10885 ,  H01L27/10888

Abstract: The inventive concept provides methods of manufacturing semiconductor devices having a fine pattern. In some embodiments, the methods comprise forming an etch-target film on a substrate, forming a first mask pattern on the etch-target film, forming a second mask pattern by performing an ion implantation process in the first mask pattern, and etching the etch-target film using the second mask pattern.

Abstract translation: 本发明构思提供制造具有精细图案的半导体器件的方法。 在一些实施例中，所述方法包括在衬底上形成蚀刻靶膜，在蚀刻靶膜上形成第一掩模图案，通过在第一掩模图案中执行离子注入工艺形成第二掩模图案，并蚀刻蚀刻 - 使用第二掩模图案的目标膜。

公开(公告)号：US08877634B2

公开(公告)日：2014-11-04

申请号：US13720170

申请日：2012-12-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Woon Shin ,  Bong-Hyun Kim ,  Su-Min Kim ,  Hyo-Jung Kim ,  Chang-Min Park ,  Soo-Jin Hong

IPC: H01L21/4763 ,  H01L21/768 ,  H01L21/308 ,  H01L21/033 ,  H01L27/108 ,  H01L21/311

CPC classification number: H01L21/308 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/76802 ,  H01L21/76816 ,  H01L21/76897 ,  H01L27/10855 ,  H01L27/10885 ,  H01L27/10888

Abstract: The inventive concept provides methods of manufacturing semiconductor devices having a fine pattern. In some embodiments, the methods comprise forming an etch-target film on a substrate, forming a first mask pattern on the etch-target film, forming a second mask pattern by performing an ion implantation process in the first mask pattern, and etching the etch-target film using the second mask pattern.

Abstract translation: 本发明构思提供制造具有精细图案的半导体器件的方法。 在一些实施例中，所述方法包括在衬底上形成蚀刻靶膜，在蚀刻靶膜上形成第一掩模图案，通过在第一掩模图案中执行离子注入工艺形成第二掩模图案，并蚀刻蚀刻 - 使用第二掩模图案的目标膜。

公开(公告)号：US09484203B2

公开(公告)日：2016-11-01

申请号：US14535437

申请日：2014-11-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jun-Hee Lim ,  Ki-Jae Hur ,  Sung-Hwan Kim ,  Hae-In Jung ,  Soo-Jin Hong

IPC: H01L21/336 ,  H01L21/8234 ,  H01L21/265 ,  H01L21/324 ,  H01L29/423 ,  H01L29/78 ,  H01L29/66

CPC classification number: H01L21/26506 ,  H01L21/324 ,  H01L29/4236 ,  H01L29/6656 ,  H01L29/66575 ,  H01L29/78

Abstract: In a method of manufacturing a semiconductor device, a gate structure is formed on a substrate. An ion implantation process is performed at an upper portion of the substrate exposed by the gate structure, so that an ion implantation region is formed to have an expanded volume. The ion implantation process uses ions that are identical to a material of the substrate.

Abstract translation: 在制造半导体器件的方法中，在衬底上形成栅极结构。 在由栅极结构暴露的衬底的上部进行离子注入工艺，使得形成离子注入区域以具有膨胀的体积。 离子注入工艺使用与衬底材料相同的离子。